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    Method and processing system for monitoring status of system components
    1.
    发明授权
    Method and processing system for monitoring status of system components 有权
    监控系统组件状态的方法和处理系统

    公开(公告)号：US07479454B2

    公开(公告)日：2009-01-20

    申请号：US10674703

    申请日：2003-09-30

    申请人： David L. O'Meara ,  Daniel Craig Burdett ,  Stephen H. Cabral ,  Gert Leusink ,  John William Kostenko ,  Cory Wajda

    发明人： David L. O'Meara ,  Daniel Craig Burdett ,  Stephen H. Cabral ,  Gert Leusink ,  John William Kostenko ,  Cory Wajda

    IPC分类号： H01L21/302

    CPC分类号： H01L21/67276 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L21/67253

    摘要： A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.

    摘要翻译： 一种在过程中监视系统组件的状态的方法和系统。 该方法包括在过程期间将系统组分暴露于反应气体，其中反应气体能够蚀刻系统组分材料以形成侵蚀产物，并且在该过程期间监测侵蚀产物的释放以确定系统部件的状态 。 可以监测的方法包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺。 系统组件可以是消耗系统部件，例如处理管，屏蔽件，环，挡板，注射器，衬底保持器，衬垫，基座，帽盖，电极和加热器 其可以进一步包括保护涂层。 处理系统包括处理室中的系统部件，用于引入反应气体的气体注入系统，用于监视系统部件的状态的室保护系统以及响应于状态来控制处理系统的控制器。

    Method for monitoring status of system components
    2.
    发明授权
    Method for monitoring status of system components 有权
    监控系统组件状态的方法

    公开(公告)号：US08460945B2

    公开(公告)日：2013-06-11

    申请号：US10673513

    申请日：2003-09-30

    申请人： David L. O'Meara ,  Daniel Craig Burdett ,  Stephen H. Cabral ,  Gert Leusink ,  John William Kostenko ,  Cory Wajda

    发明人： David L. O'Meara ,  Daniel Craig Burdett ,  Stephen H. Cabral ,  Gert Leusink ,  John William Kostenko ,  Cory Wajda

    IPC分类号： H01L21/00

    CPC分类号： H01J37/32935 ,  G01N21/55 ,  G01N21/59

    摘要： A method and system are provided for monitoring status of a system component in a process chamber of a batch type processing system. The method includes exposing a system component to light from a light source and monitoring interaction of the light with the system component to determine status of the system component. The method can detect light transmission and/or light reflection from a system component during a process that can include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, and a liner, and can further contain a protective coating.

    摘要翻译： 提供了一种用于监视批处理系统的处理室中的系统组件的状态的方法和系统。 该方法包括将系统组件暴露于来自光源的光并监测光与系统组件的相互作用以确定系统组件的状态。 该方法可以在可以包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺的过程中检测来自系统部件的光透射和/或光反射。 系统组件可以是消耗系统部件，例如处理管，屏蔽，环，挡板和衬垫，并且还可以包含保护涂层。

    Method and processing system for monitoring status of system components
    3.
    发明申请
    Method and processing system for monitoring status of system components 有权
    监控系统组件状态的方法和处理系统

    公开(公告)号：US20050070104A1

    公开(公告)日：2005-03-31

    申请号：US10674703

    申请日：2003-09-30

    申请人： David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

    发明人： David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

    IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/67276 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L21/67253

    摘要： A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.

    摘要翻译： 一种在过程中监视系统组件的状态的方法和系统。 该方法包括在过程期间将系统组分暴露于反应气体，其中反应气体能够蚀刻系统组分材料以形成侵蚀产物，并且在该过程期间监测侵蚀产物的释放以确定系统部件的状态 。 可以监测的方法包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺。 系统组件可以是消耗系统部件，例如处理管，屏蔽件，环，挡板，注射器，衬底保持器，衬垫，基座，帽盖，电极和加热器 其可以进一步包括保护涂层。 处理系统包括处理室中的系统部件，用于引入反应气体的气体注入系统，用于监视系统部件的状态的室保护系统以及响应于状态来控制处理系统的控制器。

    Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation
    4.
    发明授权
    Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation 失效
    使用多频电磁辐射增加薄膜拉伸应力的方法和系统

    公开(公告)号：US07300891B2

    公开(公告)日：2007-11-27

    申请号：US11091755

    申请日：2005-03-29

    申请人： Igeta Masonobu ,  Cory Wajda ,  Gert Leusink

    发明人： Igeta Masonobu ,  Cory Wajda ,  Gert Leusink

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76801 ,  C23C16/345 ,  C23C16/56 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829

    摘要： A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to electro-magnetic (EM) radiation, such as EM radiation having a wavelength component less than about 500 nm. The EM source can include a multi-frequency source of radiation. Additionally, the source of radiation is collimated in order to selectively treat regions of a non-planar film.

    摘要翻译： 描述了一种用于增加在诸如氮化硅膜之类的衬底上形成的薄膜中的拉伸应力的方法和系统。 薄膜可以是平面薄膜，或非平面薄膜，例如在NMOS栅极上形成的氮化物薄膜。 该薄膜暴露于电磁（EM）辐射，例如波长分量小于约500nm的EM辐射。 EM源可以包括多频辐射源。 另外，为了选择性地处理非平面膜的区域，准直辐射源。

    Method for monitoring status of system components
    6.
    发明申请
    Method for monitoring status of system components 有权
    监控系统组件状态的方法

    公开(公告)号：US20050068519A1

    公开(公告)日：2005-03-31

    申请号：US10673513

    申请日：2003-09-30

    申请人： David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

    发明人： David O'Meara ,  Daniel Burdett ,  Stephen Cabral ,  Gert Leusink ,  John Kostenko ,  Cory Wajda

    IPC分类号： G01N21/55 ,  G01N21/59 ,  G01N21/00

    CPC分类号： H01J37/32935 ,  G01N21/55 ,  G01N21/59

    摘要： A method and system are provided for monitoring status of a system component in a process chamber of a batch type processing system. The method includes exposing a system component to light from a light source and monitoring interaction of the light with the system component to determine status of the system component. The method can detect light transmission and/or light reflection from a system component during a process that can include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, and a liner, and can further contain a protective coating.

    摘要翻译： 提供了一种用于监视批处理系统的处理室中的系统组件的状态的方法和系统。 该方法包括将系统组件暴露于来自光源的光并监测光与系统组件的相互作用以确定系统组件的状态。 该方法可以在可以包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺的过程中检测来自系统部件的光透射和/或光反射。 系统组件可以是消耗系统部件，例如处理管，屏蔽，环，挡板和衬垫，并且还可以包含保护涂层。

    Method for fabricating a semiconductor device
    8.
    发明授权
    Method for fabricating a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07393761B2

    公开(公告)日：2008-07-01

    申请号：US11045124

    申请日：2005-01-31

    申请人： Cory Wajda ,  Gert Leusink

    发明人： Cory Wajda ,  Gert Leusink

    IPC分类号： H01L21/322

    CPC分类号： H01L21/02321 ,  H01L21/02123 ,  H01L21/02175 ,  H01L21/0234 ,  H01L21/28079 ,  H01L21/316 ,  H01L29/495

    摘要： A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a metal-containing gate electrode layer formed on the high-k dielectric layer, forming low-energy excited dopant species from a process gas in a plasma, and exposing the gate stack to the excited dopant species to incorporate a dopant into the gate stack. The method can be utilized to tune the workfunction of the gate stack.

    摘要翻译： 一种在制造半导体器件中处理栅叠层的方法，其特征在于，提供一种基板，该基板含有形成在基板上的电介质层的栅叠层和形成在高k电介质层上的含金属的栅电极层， 来自等离子体中的工艺气体的能量激发的掺杂剂物质，并且将栅极堆叠暴露于激发的掺杂物种类以将掺杂剂掺入到栅极堆叠中。 该方法可用于调整栅极堆叠的功能。

    Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation
    9.
    发明申请
    Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation 失效
    使用多频电磁辐射增加薄膜拉伸应力的方法和系统

    公开(公告)号：US20060226518A1

    公开(公告)日：2006-10-12

    申请号：US11091755

    申请日：2005-03-29

    申请人： Igeta Masanobu ,  Cory Wajda ,  Gert Leusink

    发明人： Igeta Masanobu ,  Cory Wajda ,  Gert Leusink

    IPC分类号： H01L23/58 ,  C23C16/50 ,  H01L21/4757

    CPC分类号： H01L21/76801 ,  C23C16/345 ,  C23C16/56 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829

    摘要： A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to electromagnetic (EM) radiation, such as EM radiation having a wavelength component less than about 500 nm. The EM source can include a multi-frequency source of radiation. Additionally, the source of radiation is collimated in order to selectively treat regions of a non-planar film.

    摘要翻译： 描述了一种用于增加在诸如氮化硅膜之类的衬底上形成的薄膜中的拉伸应力的方法和系统。 薄膜可以是平面薄膜，或非平面薄膜，例如在NMOS栅极上形成的氮化物薄膜。 该薄膜暴露于电磁（EM）辐射，例如波长分量小于约500nm的EM辐射。 EM源可以包括多频辐射源。 另外，为了选择性地处理非平面膜的区域，准直辐射源。