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    PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO
    4.
    发明申请
    PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO 失效

    公开(公告)号：US20110291243A1

    公开(公告)日：2011-12-01

    申请号：US12790203

    申请日：2010-05-28

    申请人： Martin Jay Seamons ,  Kwangduk Douglas Lee ,  Chiu Chan ,  Patrick Reilly ,  Sudha Rathi

    发明人： Martin Jay Seamons ,  Kwangduk Douglas Lee ,  Chiu Chan ,  Patrick Reilly ,  Sudha Rathi

    IPC分类号： H01L21/302 ,  H01L23/52 ,  G03F7/20 ,  H01L21/30

    CPC分类号： H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337

    摘要： Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material to an extent capable of protecting the first set of interconnect features from subsequent processes while being easily removable when desired, planarizing an upper surface of the first base material such that an upper surface of the ashable material filled in the first set of interconnect features is at the same level with the upper surface of the first base material, providing a substantial planar outer surface of the first base material, depositing a first film stack comprising a second base material on the substantial planar outer surface of the first base material, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features, and removing the ashable material from the first base material, thereby extending a feature depth of the semiconductor device by connecting the second set of interconnect features to the first set of interconnect features. In another embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and having a first set of interconnect features filled with an amorphous carbon material, the first film stack comprising a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer, and patterning a portion of the first photoresist layer by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features.

    ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM
    5.
    发明申请
    ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM 有权
    超高选择性的硬掩膜

    公开(公告)号：US20110287633A1

    公开(公告)日：2011-11-24

    申请号：US12784341

    申请日：2010-05-20

    申请人： Kwangduk Douglas Lee ,  Martin Jay Seamons ,  Sudha Rathi ,  Chiu Chan ,  Michael H. Lin

    发明人： Kwangduk Douglas Lee ,  Martin Jay Seamons ,  Sudha Rathi ,  Chiu Chan ,  Michael H. Lin

    IPC分类号： H01L21/3105 ,  H01L21/312

    CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/31144

    摘要： A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.

    摘要翻译： 在基板处理室中的基板上形成无定形碳层的方法包括将烃源引入到处理室中，将氩单独或与氦，氢，氮及其组合单独或组合地引入到处理室中， 其中氩气具有约10:1至约20:1的烃源体积流量比的体积流速，在处理室中以约2托至10托的基本较低的压力产生等离子体，并形成保形 无定形碳层。

    Apparatus and method for centering a substrate in a process chamber
    6.
    发明授权
    Apparatus and method for centering a substrate in a process chamber 有权
    用于将衬底定中在处理室中的装置和方法

    公开(公告)号：US07922440B2

    公开(公告)日：2011-04-12

    申请号：US12171594

    申请日：2008-07-11

    申请人： Dale R. Du Bois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Chiu Chan ,  Karthik Janakiraman

    发明人： Dale R. Du Bois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Chiu Chan ,  Karthik Janakiraman

    IPC分类号： B21B39/22 ,  B65G47/22

    CPC分类号： H01L21/68 ,  Y10S414/136

    摘要： The present invention comprises an apparatus and method for centering a substrate in a process chamber. In one embodiment, the apparatus comprises a substrate support having a support surface adapted to receive the placement of a substrate and a reference axis substantially perpendicular to the support surface, and a plurality of centering members extending above the support surface. Each centering member is biased into a first position and is movable to a second position by interacting with an opposing member. A movement between the first position and the second position thereby causes each centering member to releasably engage with a peripheral edge of the substrate to push the substrate in a direction toward the reference axis.

    摘要翻译： 本发明包括用于使处理室中的衬底居中的装置和方法。 在一个实施例中，该装置包括具有适于接收基板的放置和基本上垂直于支撑表面的参考轴的支撑表面的基板支撑件，以及在支撑表面上方延伸的多个定心构件。 每个定心构件被偏压到第一位置，并且通过与相对构件相互作用而可移动到第二位置。 第一位置和第二位置之间的运动使得每个定心构件可释放地与基板的周缘接合，以沿着基准轴线的方向推动基板。

    APPARATUS AND METHOD FOR CENTERING A SUBSTRATE IN A PROCESS CHAMBER
    8.
    发明申请
    APPARATUS AND METHOD FOR CENTERING A SUBSTRATE IN A PROCESS CHAMBER 有权
    用于在过程室中设置基板的装置和方法

    公开(公告)号：US20090017228A1

    公开(公告)日：2009-01-15

    申请号：US12171594

    申请日：2008-07-11

    申请人： Dale R. Du Bois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Chiu Chan ,  Karthik Janakiraman

    发明人： Dale R. Du Bois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Chiu Chan ,  Karthik Janakiraman

    IPC分类号： B01J19/08 ,  C23C16/54 ,  C23C16/458

    CPC分类号： H01L21/68 ,  Y10S414/136

    摘要： The present invention comprises an apparatus and method for centering a substrate in a process chamber. In one embodiment, the apparatus comprises a substrate support having a support surface adapted to receive the placement of a substrate and a reference axis substantially perpendicular to the support surface, and a plurality of centering members extending above the support surface. Each centering member is biased into a first position and is movable to a second position by interacting with an opposing member. A movement between the first position and the second position thereby causes each centering member to releasably engage with a peripheral edge of the substrate to push the substrate in a direction toward the reference axis.

    摘要翻译： 本发明包括用于使处理室中的衬底居中的装置和方法。 在一个实施例中，该装置包括具有适于接收基板的放置和基本上垂直于支撑表面的参考轴的支撑表面的基板支撑件，以及在支撑表面上方延伸的多个定心构件。 每个定心构件被偏压到第一位置，并且通过与相对构件相互作用而可移动到第二位置。 第一位置和第二位置之间的运动使得每个定心构件可释放地与基板的周缘接合，以沿着基准轴线的方向推动基板。