利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

42 条记录 (耗时 0.027 秒)

    Fabrication of high power semiconductor device with a heat sink and integration with planar microstrip circuitry
    1.
    发明授权
    Fabrication of high power semiconductor device with a heat sink and integration with planar microstrip circuitry 有权
    具有散热器并与平面微带电路集成的大功率半导体器件的制造

    公开(公告)号：US06274922B1

    公开(公告)日：2001-08-14

    申请号：US09334165

    申请日：1999-06-15

    申请人： Debabani Choudhury ,  James A. Foschaar ,  Phillip H. Lawyer ,  David B. Rensch

    发明人： Debabani Choudhury ,  James A. Foschaar ,  Phillip H. Lawyer ,  David B. Rensch

    IPC分类号： H01L21302

    CPC分类号： H01L23/36 ,  H01L21/4871 ,  H01L2224/48091 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A low cost highly integrated method of fabricating a heat sink on the backside of a power semiconductor device maintains device performance, improves thermal transfer, and enables reliable planar connections without having to dice the wafer or package the discrete device-heat sink assembly. An etch stop layer is formed between the wafer and the frontside power devices to protect them during backside processing and to reduce the contact resistance between the device and its heat sink. The heat sinks are formed by thinning, patterning and then plating the wafer in such a manner that the devices can be released without dicing. The heat sinks are preferably oversized so that a vacuum tool can grasp the heat sink from above without damaging the device and then compression bond the heat sink onto a planar microstrip circuit assembly, which is designed and packaged to facilitate easy replacement of failed devices.

    摘要翻译： 在功率半导体器件的背面上制造散热器的低成本高度集成的方法保持器件性能，改善热传递，并且实现可靠的平面连接，而不必将晶片或封装成分立的器件 - 散热器组件。 在晶片和前侧功率器件之间形成蚀刻停止层，以在背面处理期间保护它们，并降低器件与其散热器之间的接触电阻。 散热器通过使薄片变薄，图案化，然后以晶片的方式进行电镀而形成，使得可以在没有切割的情况下释放器件。 散热器优选地是过大的，使得真空工具可以从上面抓住散热器而不会损坏设备，然后将散热器压缩到平面微带电路组件上，该平面微带电路组件被设计和封装以便于容易地更换故障设备。

    Fabrication of high power semiconductor devices with respective heat sinks for integration with planar microstrip circuitry
    2.
    发明授权
    Fabrication of high power semiconductor devices with respective heat sinks for integration with planar microstrip circuitry 失效
    制造具有相应散热器的大功率半导体器件，用于与平面微带电路集成

    公开(公告)号：US6048777A

    公开(公告)日：2000-04-11

    申请号：US992882

    申请日：1997-12-18

    申请人： Debabani Choudhury ,  James A. Foschaar ,  Phillip H. Lawyer ,  David B. Rensch

    发明人： Debabani Choudhury ,  James A. Foschaar ,  Phillip H. Lawyer ,  David B. Rensch

    IPC分类号： H01L21/48 ,  H01L23/36 ,  H01L21/265

    CPC分类号： H01L23/36 ,  H01L21/4871 ,  H01L2224/48091 ,  H01L2924/1305

    摘要： A low cost highly integrated method of fabricating a heat sink on the backside of a power semiconductor device maintains device performance, improves thermal transfer, and enables reliable planar connections without having to dice the wafer or package the discrete device-heat sink assembly. An etch stop layer is formed between the wafer and the frontside power devices to protect them during backside processing and to reduce the contact resistance between the device and its heat sink. The heat sinks are formed by thinning, patterning and then plating the wafer in such a manner that the devices can be released without dicing. The heat sinks are preferably oversized so that a vacuum tool can grasp the heat sink from above without damaging the device and then compression bond the heat sink onto a planar microstrip circuit assembly, which is designed and packaged to facilitate easy replacement of failed devices.

    摘要翻译： 在功率半导体器件的背面上制造散热器的低成本高度集成的方法保持器件性能，改善热传递，并且实现可靠的平面连接，而不必将晶片或封装成分立的器件 - 散热器组件。 在晶片和前侧功率器件之间形成蚀刻停止层，以在背面处理期间保护它们，并降低器件与其散热器之间的接触电阻。 散热器通过使薄片化，图形化，然后以晶片的方式镀覆而形成，使得可以在不切割的情况下释放器件。 散热器优选地是过大的，使得真空工具可以从上面抓住散热器而不会损坏设备，然后将散热器压缩到平面微带电路组件上，该平面微带电路组件被设计和封装以便于容易地更换故障设备。

    Platform Integrated Phased Array Transmit/Receive Module
    8.
    发明申请
    Platform Integrated Phased Array Transmit/Receive Module 有权
    平台集成相控阵发射/接收模块

    公开(公告)号：US20100164783A1

    公开(公告)日：2010-07-01

    申请号：US12347316

    申请日：2008-12-31

    申请人： Debabani Choudhury ,  Richard S. Perry

    发明人： Debabani Choudhury ,  Richard S. Perry

    IPC分类号： G01S13/00

    CPC分类号： H01Q3/26 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01Q1/02 ,  H01Q21/0025 ,  H01Q21/065 ,  H01Q23/00 ,  H01L2224/0401

    摘要： Disclosed are integration approaches for mm-wave planar phased array type architectures using multilayer substrate technologies. For instance, an apparatus may include a plurality of substrate layers, an integrated circuit, and a connector module. The plurality of substrate layers includes a first substrate layer having one or more phased array elements. The integrated circuit exchange one or more radio frequency (RF) signals (e.g., mm-wave signals) with the one or more phased array elements. The connector module exchange further signals with the integrated circuit that correspond to the one or more RF signals. For example, these further signals may be baseband or intermediate frequency (IF) signals.

    摘要翻译： 公开了使用多层衬底技术的毫米波平面相控阵列型结构的集成方法。 例如，设备可以包括多个基板层，集成电路和连接器模块。 多个基底层包括具有一个或多个相控阵列元件的第一基底层。 集成电路与一个或多个相控阵列元件交换一个或多个射频（RF）信号（例如，毫米波信号）。 连接器模块与对应于一个或多个RF信号的集成电路交换进一步的信号。 例如，这些另外的信号可以是基带或中频（IF）信号。