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公开(公告)号：US6091537A
公开(公告)日：2000-07-18
申请号：US209347
申请日：1998-12-11
Applicant: Decai Sun , Eric Peeters , Ross D. Bringans , Patrick Y. Maeda
Inventor： Decai Sun , Eric Peeters , Ross D. Bringans , Patrick Y. Maeda
CPC classification number: G02B26/10 , B81B3/0062 , G02B26/0875 , G02B7/023 , G02B7/08 , B81B2201/033 , B81B2201/047 , B81B2203/051 , B81B2203/053 , H01S5/0071 , H01S5/0607 , H01S5/18388
Abstract: A micro-machined movable microlens assembly is formed on undoped or pure a semiconductor substrate. The movable microlens assemblies are to be actuated using force generators which cause various mechanical degrees of freedom depending upon the type of stage suspension and actuation used.
Abstract translation: 微加工的可移动微透镜组件形成在未掺杂或纯的半导体衬底上。 使用力发生器来致动可移动的微透镜组件，所述力发生器根据所使用的阶段悬架和致动器的类型而产生各种机械自由度。
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公开(公告)号：US6058124A
公开(公告)日：2000-05-02
申请号：US976845
申请日：1997-11-25
Applicant: Decai Sun , Ross D. Bringans
Inventor： Decai Sun , Ross D. Bringans
CPC classification number: H01S5/4031 , H01S5/02 , H01S5/2214 , H01S5/32316 , H01S5/32341 , H01S5/4087
Abstract: A monolithic laser structure has an infrared laser structure side by side with a red laser structure. The infrared and red laser structures share the same substrate and have the same material for the cladding layers and for the cap and barrier reduction layers. The red and infrared laser structures can have native oxide confined or metal confined ridge waveguides.
Abstract translation: 单片激光器结构具有红外激光结构并排的红外激光结构。 红外和红色激光结构共享相同的基板，并且具有用于包覆层和盖和阻挡层还原层的相同材料。 红色和红外激光结构可以具有自然氧化物限制或金属限制脊状波导。
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3.发明授权Fabrication of scanning III-V compound light emitters integrated with Si-based actuators 有权与Si基致动器集成的扫描III-V复合发光体的制造
公开(公告)号：US6054335A
公开(公告)日：2000-04-25
申请号：US209866
申请日：1998-12-11
Applicant: Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
Inventor： Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
IPC: B81B3/00 , B81B7/02 , H01L27/15 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/042 , H01S5/183 , H01S5/42 , H01L21/00
CPC classification number: H01S5/18308 , H01S5/02288 , H01L27/15 , H01S5/021 , H01S5/02252 , H01S5/4087 , H01S5/423 , H01S5/426
Abstract: A III-V compound light emitter is integrated with Si-based actuators. The Proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuators provides linear or angular movement of the light emitter.
Abstract translation: III-V复合光发射器与Si基致动器集成。 提出的器件利用了III-V化合物的优异光学性能和Si的优异机械性能，以及Si-Micro-Electro-Mechanical Systems（MEMS）的成熟制造技术。 发射极可以是发光二极管（LED），垂直腔表面发射激光器（VCSEL）或边缘发射激光器。 基于Si的致动器的基于电或磁的致动器提供光发射器的线性或角度运动。
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公开(公告)号：US06180428B2
公开(公告)日：2001-01-30
申请号：US09172883
申请日：1998-10-15
Applicant: Eric Peeters , Decai Sun , G. A. Neville Connell , Ross D. Bringans , Raj B. Apte , Thomas L. Paoli , Patrick Y. Maeda , David K. Fork , Joel A. Kubby , Philip D. Floyd
Inventor： Eric Peeters , Decai Sun , G. A. Neville Connell , Ross D. Bringans , Raj B. Apte , Thomas L. Paoli , Patrick Y. Maeda , David K. Fork , Joel A. Kubby , Philip D. Floyd
IPC: H01L2100
CPC classification number: H01S5/02252 , H01L27/15 , H01S5/183 , H01S5/423
Abstract: A micro-machined movable light emitting assembly is formed on or from an undoped or pure III-V substrate or formed on or from a doped III-V substrate. The movable light emitting assemblies are to be actuated using force generators, to generate the various mechanical degrees of freedom depending on the type of stage suspension and actuation.
Abstract translation: 微加工的可移动发光组件形成在未掺杂的或纯的III-V衬底上，或者形成在掺杂的III-V衬底上或从掺杂的III-V衬底上形成。 使用力发生器来致动可移动发光组件，以根据舞台悬架和致动的类型产生各种机械自由度。
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公开(公告)号：US6136623A
公开(公告)日：2000-10-24
申请号：US73598
申请日：1998-05-06
Applicant: Daniel Hofstetter , Clarence J. Dunnrowicz , Decai Sun , Ross D. Bringans , Michael A. Kneissl
Inventor： Daniel Hofstetter , Clarence J. Dunnrowicz , Decai Sun , Ross D. Bringans , Michael A. Kneissl
CPC classification number: B82Y20/00 , H01S5/4031 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S5/343 , H01S5/34326 , H01S5/34333 , H01S5/4043 , H01S5/4087
Abstract: This invention relates to a multiple wavelength laser structure, and more particularly, to a multiple wavelength laser array structure fabricated by flip-chip bonding from laser structures on two different substrates. A side by side red/IR laser structure is flip-chip bonded to a blue laser structure to form a red/blue/IR hybrid integrated laser structure.
Abstract translation: 本发明涉及一种多波长激光器结构，更具体地说，涉及通过在两个不同基板上的激光器结构的倒装芯片接合制造的多波长激光器阵列结构。 并联红/红外激光结构将蓝光激光结构倒装芯片结合，形成红/蓝/红外混合集成激光器结构。
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Patent Agency Ranking
公开(公告)号：US06167074A
公开(公告)日：2000-12-26
申请号：US512170
申请日：2000-02-24
Applicant: Decai Sun , Ross D. Bringans
Inventor： Decai Sun , Ross D. Bringans
CPC classification number: H01S5/4031 , H01S5/02 , H01S5/2214 , H01S5/32316 , H01S5/32341 , H01S5/4087
Abstract: A monolithic laser structure has an infrared laser structure side by side with a red laser structure. The infrared and red laser structures share the same substrate and have the same material for the cladding layers and for the cap and barrier reduction layers. The red and infrared laser structures can have native oxide confined or metal confined ridge waveguides.
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公开(公告)号：US6121983A
公开(公告)日：2000-09-19
申请号：US196396
申请日：1998-11-19
Applicant: David K. Fork , G. A. Neville Connell , Eric Peeters , Robert L. Thornton , Patrick Y. Maeda , Ross D. Bringans , Thomas L. Paoli , Joel A. Kubby , Decai Sun , Philip D. Floyd
Inventor： David K. Fork , G. A. Neville Connell , Eric Peeters , Robert L. Thornton , Patrick Y. Maeda , Ross D. Bringans , Thomas L. Paoli , Joel A. Kubby , Decai Sun , Philip D. Floyd
CPC classification number: H04N1/1135 , B41J2/465 , G02B26/0833 , G02B26/10 , H04N1/192 , H01S5/18388 , H01S5/423 , H04N1/195
Abstract: A solid state laser array is multiplexed using an array of micromirrors to permit high resolution printing in a wide format. Each laser in the laser array and each micromirror in the mirror array is individually controlled. The laser array may be an array of VCSELs produced on a GaAs substrate.
Abstract translation: 使用微镜阵列来复用固态激光器阵列，以允许以宽格式进行高分辨率打印。 激光阵列中的每个激光器和反射镜阵列中的每个微镜单独控制。 激光器阵列可以是在GaAs衬底上产生的VCSEL阵列。
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8.发明授权公开(公告)号：US06567448B1
公开(公告)日：2003-05-20
申请号：US09210315
申请日：1998-12-11
Applicant: Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
Inventor： Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
IPC: H01S500
CPC classification number: H01S5/18308 , H01S5/021 , H01S5/02252 , H01S5/02288 , H01S5/4087 , H01S5/423 , H01S5/426
Abstract: A III-V compound light emitter is integrated with Si-based actuators. The proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuators provides
Abstract translation: III-V复合光发射器与Si基致动器集成。 所提出的器件利用了III-V化合物的优异光学性能和Si的优异机械性能，以及Si-Micro-Electro-Mechanical Systems（MEMS）的成熟制造技术。 发射极可以是发光二极管（LED），垂直腔表面发射激光器（VCSEL）或边缘发射激光器。 基于Si的致动器的基于电或磁的致动器提供
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公开(公告)号：US6116756A
公开(公告)日：2000-09-12
申请号：US173329
申请日：1998-10-15
Applicant: Eric Peeters , Decai Sun , G. A. Neville Connell , Ross D. Bringans , Raj B. Apte , Thomas L. Paoli , Patrick Y. Maeda , David K. Fork , Joel A. Kubby , Philip D. Floyd
Inventor： Eric Peeters , Decai Sun , G. A. Neville Connell , Ross D. Bringans , Raj B. Apte , Thomas L. Paoli , Patrick Y. Maeda , David K. Fork , Joel A. Kubby , Philip D. Floyd
CPC classification number: H01S5/02252 , H01L27/15 , H01S5/183 , H01S5/423
Abstract: A micro-machined movable light emitting assembly is formed on or from an undoped or pure III-V substrate or formed on or from a doped III-V substrate. The movable light emitting assemblies are to be actuated using force generators, to generate the various mechanical degrees of freedom depending on the type of stage suspension and actuation.
Abstract translation: 微加工的可移动发光组件形成在未掺杂的或纯的III-V衬底上，或者形成在掺杂的III-V衬底上或从掺杂的III-V衬底上形成。 使用力发生器来致动可移动发光组件，以根据舞台悬架和致动的类型产生各种机械自由度。
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10.发明授权Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities 失效在蓝宝石衬底上形成具有降低的位错密度的III-V族氮化物膜
公开(公告)号：US6064078A
公开(公告)日：2000-05-16
申请号：US83137
申请日：1998-05-22
Applicant: John E. Northrup , Linda T. Romano , Ross D. Bringans
Inventor： John E. Northrup , Linda T. Romano , Ross D. Bringans
IPC: H01L21/20 , H01L21/203 , H01L21/205 , H01L33/00
CPC classification number: H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02491 , H01L21/02499 , H01L21/02502 , H01L21/0254
Abstract: A single layer of atoms of a selected valence is deposited between a substrate and a group III-V nitride film to improve the quality of the nitride film and of subsequently deposited nitride films on the substrate. The interlayer provides local charge neutrality at the interface, thereby promoting two-dimensional growth of the nitride film and reduced dislocation densities. When the substrate is sapphire, the interlayer should include atoms of group II elements and possibly group III elements. The structure can include a group III-V nitride buffer layer on the interlayer to further enhance the quality of the group III-V nitride films. The structures can be used in blue light emitting optoelectronic devices.
Abstract translation: 选择的价态的单层原子沉积在衬底和III-V族氮化物膜之间以提高氮化物膜的质量和随后在衬底上沉积的氮化物膜的质量。 中间层在界面处提供局部电荷中性，从而促进氮化膜的二维生长和降低的位错密度。 当衬底是蓝宝石时，中间层应包括II族元素的原子和可能的III族元素。 该结构可以包括中间层上的III-V族氮化物缓冲层，以进一步提高III-V族氮化物膜的质量。 该结构可用于蓝光发光光电器件。
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