公开(公告)号：US08664687B2

公开(公告)日：2014-03-04

申请号：US10898204

申请日：2004-07-26

申请人： Dong Hyun Cho ,  Masayoshi Koike ,  Yuiji Imai ,  Min Ho Kim ,  Bang Won Oh ,  Hun Joo Hahm

发明人： Dong Hyun Cho ,  Masayoshi Koike ,  Yuiji Imai ,  Min Ho Kim ,  Bang Won Oh ,  Hun Joo Hahm

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

摘要： Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.

摘要翻译： 提供一种氮化物半导体发光器件，其包括由AlN制成的多晶或非晶衬底; 形成在所述AlN基板上并具有条纹或格子结构的多个电介质图案; 通过横向外延生长形成在具有电介质图案的AlN衬底上的侧向外延氮化半导体层; 形成在所述氮化物半导体层上的第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上的有源层; 以及形成在所述有源层上的第二导电氮化物半导体层; 及其制造方法。

公开(公告)号：US20110300652A1

公开(公告)日：2011-12-08

申请号：US13211107

申请日：2011-08-16

申请人： Seong Eun Park ,  Bang Won OH ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

发明人： Seong Eun Park ,  Bang Won OH ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

IPC分类号： H01L33/60

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/0079 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/34333

摘要： There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.

摘要翻译： 提供了一种氮化物半导体发光器件及其制造方法。 所述氮化物半导体发光器件包括：用于生长氮化物单晶的衬底，所述衬底具有导电性; 在该基板上形成的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和多个量子阱层; 形成在有源层上的n型氮化物半导体层; 形成在所述基板的底部上的p电极; 以及形成在n型氮化物半导体层的顶部上的n电极。

公开(公告)号：US20080099781A1

公开(公告)日：2008-05-01

申请号：US11898955

申请日：2007-09-18

申请人： Rak Jun Choi ,  Kureshov Vladimir ,  Bang Won Oh ,  Gil Han Park ,  Hee Seok Park ,  Seong Eun Park ,  Young Min Park ,  Min Ho Kim

发明人： Rak Jun Choi ,  Kureshov Vladimir ,  Bang Won Oh ,  Gil Han Park ,  Hee Seok Park ,  Seong Eun Park ,  Young Min Park ,  Min Ho Kim

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/007 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

摘要： A method of manufacturing a III group nitride semiconductor thin film and a method of manufacturing a nitride semiconductor light emitting device employing the III group nitride semiconductor thin film manufacturing method, the III group nitride semiconductor thin film manufacturing method including: growing a first nitride single crystal on a substrate for growing a nitride; applying an etching gas to a top surface of the first nitride single crystal to selectively form a plurality of pits in a high dislocation density area; and growing a second nitride single crystal on the first nitride single crystal to maintain the pits to be void.

摘要翻译： 一种III族氮化物半导体薄膜的制造方法以及使用该III族氮化物半导体薄膜的氮化物半导体发光元件的制造方法，其特征在于，包括：生长第一氮化物单晶 在用于生长氮化物的衬底上; 将蚀刻气体施加到第一氮化物单晶的顶表面以在高位错密度区域中选择性地形成多个凹坑; 以及在所述第一氮化物单晶上生长第二氮化物单晶以保持所述凹坑为空白。

公开(公告)号：US20080078986A1

公开(公告)日：2008-04-03

申请号：US11902396

申请日：2007-09-21

申请人： Seong Eun Park ,  Bang Won Oh ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

发明人： Seong Eun Park ,  Bang Won Oh ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/0079 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/34333

摘要： There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.

摘要翻译： 提供了一种氮化物半导体发光器件及其制造方法。 所述氮化物半导体发光器件包括：用于生长氮化物单晶的衬底，所述衬底具有导电性; 在该基板上形成的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和多个量子阱层; 形成在有源层上的n型氮化物半导体层; 形成在所述基板的底部上的p电极; 以及形成在n型氮化物半导体层的顶部上的n电极。

公开(公告)号：US07981714B2

公开(公告)日：2011-07-19

申请号：US12497060

申请日：2009-07-02

申请人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

发明人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

摘要翻译： 公开了一种氮化物基半导体器件及其制备方法，其包括在硅树脂基底上形成的高质量GaN层。 根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

公开(公告)号：US07935974B2

公开(公告)日：2011-05-03

申请号：US12399619

申请日：2009-03-06

申请人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Myong Soo Cho

发明人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Myong Soo Cho

IPC分类号： H01L33/00

CPC分类号： H01L25/0756 ,  H01L27/15 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

摘要翻译： 本发明涉及使用晶片接合或金属接合的单片白光发光器件。 在本发明中，提供导电基座。 第一发光体通过金属层粘合在导电基座上。 在第一光发射器中，从底部到顶部依次层叠p型氮化物半导体层，第一有源层，n型氮化物半导体层和导电性基板。 此外，在导电基板的局部区域上形成第二发光体。 在第二发光体中，从底部到顶部依次层叠p型AlGaInP系半导体层，有源层及n型AlGaInP系半导体层。 另外，在导体基座基板的下侧形成有p电极，在n型AlGaInP系半导体层的上表面形成n电极。

公开(公告)号：US20060148186A1

公开(公告)日：2006-07-06

申请号：US11220020

申请日：2005-09-06

申请人： Soo Min Lee ,  Masayoshi Koike ,  Kyeong Ik Min ,  Cheol Kyu Kim ,  Sung Hwan Jang ,  Min Ho Kim

发明人： Soo Min Lee ,  Masayoshi Koike ,  Kyeong Ik Min ,  Cheol Kyu Kim ,  Sung Hwan Jang ,  Min Ho Kim

IPC分类号： H01L21/336

CPC分类号： C30B29/406 ,  C30B29/64 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02664

摘要： A method and apparatus for manufacturing a nitride based single crystal substrate. The method includes placing a preliminary substrate on a susceptor installed in a reaction chamber; growing a nitride single crystal layer on the preliminary substrate; and irradiating a laser beam to separate the nitride single crystal layer from the preliminary substrate under the condition that the preliminary substrate is placed in the reaction chamber.

摘要翻译： 一种用于制造氮化物基单晶衬底的方法和装置。 该方法包括将初步衬底放置在安装在反应室中的基座上; 在初始衬底上生长氮化物单晶层; 并且在预备衬底放置在反应室中的条件下照射激光束以将氮化物单晶层与预备衬底分离。

公开(公告)号：US07737429B2

公开(公告)日：2010-06-15

申请号：US11204226

申请日：2005-08-16

申请人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

发明人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

摘要翻译： 公开了一种氮化物基半导体器件及其制备方法，其包括在硅衬底上形成的高质量GaN层。 根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

公开(公告)号：US07514720B2

公开(公告)日：2009-04-07

申请号：US11442961

申请日：2006-05-31

申请人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Myong Soo Cho

发明人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Myong Soo Cho

IPC分类号： H01L29/201

CPC分类号： H01L25/0756 ,  H01L27/15 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

摘要翻译： 本发明涉及使用晶片接合或金属接合的单片白光发光器件。 在本发明中，提供导电基座。 第一发光体通过金属层粘合在导电基座上。 在第一光发射器中，从底部到顶部依次层叠p型氮化物半导体层，第一有源层，n型氮化物半导体层和导电性基板。 此外，在导电基板的局部区域上形成第二发光体。 在第二发光体中，从底部到顶部依次层叠p型AlGaInP系半导体层，有源层及n型AlGaInP系半导体层。 另外，在导体基座基板的下侧形成有p电极，在n型AlGaInP系半导体层的上表面形成n电极。

公开(公告)号：US09330610B2

公开(公告)日：2016-05-03

申请号：US13380708

申请日：2010-04-30

申请人： Jung Nam An ,  Min Ho Kim ,  Chan Sung Jeong ,  Seung Se Kim ,  Hoon Hur ,  Won Do Kee

发明人： Jung Nam An ,  Min Ho Kim ,  Chan Sung Jeong ,  Seung Se Kim ,  Hoon Hur ,  Won Do Kee

IPC分类号： G09G3/36 ,  G09G3/34

CPC分类号： G09G3/3426 ,  G09G3/3611 ,  G09G2320/0233 ,  G09G2320/0606 ,  G09G2320/0626 ,  G09G2320/0646 ,  G09G2360/16

摘要： The present invention relates to a liquid crystal display device in which the light sources of a backlight unit are independently driven as a plurality of separate regions, and to a drive method for the same. In situations where there is a substantial variation in the brightness (luminance) of regions being displayed on the liquid crystal display device, the present invention can improve the visibility of boundaries due to differences in luminance in images displayed within the regions of the backlight unit emitting light at different levels of luminance as a result.

摘要翻译： 本发明涉及一种液晶显示装置，其中背光单元的光源被独立地驱动为多个分开的区域，以及其驱动方法。 在显示在液晶显示装置上的区域的亮度（亮度）存在实质变化的情况下，本发明可以提高由背光单元发射的区域内显示的图像的亮度差异引起的边界的可视性 结果导致亮度不同的光。