公开(公告)号：US20080099781A1

公开(公告)日：2008-05-01

申请号：US11898955

申请日：2007-09-18

申请人： Rak Jun Choi ,  Kureshov Vladimir ,  Bang Won Oh ,  Gil Han Park ,  Hee Seok Park ,  Seong Eun Park ,  Young Min Park ,  Min Ho Kim

发明人： Rak Jun Choi ,  Kureshov Vladimir ,  Bang Won Oh ,  Gil Han Park ,  Hee Seok Park ,  Seong Eun Park ,  Young Min Park ,  Min Ho Kim

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/007 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

摘要： A method of manufacturing a III group nitride semiconductor thin film and a method of manufacturing a nitride semiconductor light emitting device employing the III group nitride semiconductor thin film manufacturing method, the III group nitride semiconductor thin film manufacturing method including: growing a first nitride single crystal on a substrate for growing a nitride; applying an etching gas to a top surface of the first nitride single crystal to selectively form a plurality of pits in a high dislocation density area; and growing a second nitride single crystal on the first nitride single crystal to maintain the pits to be void.

摘要翻译： 一种III族氮化物半导体薄膜的制造方法以及使用该III族氮化物半导体薄膜的氮化物半导体发光元件的制造方法，其特征在于，包括：生长第一氮化物单晶 在用于生长氮化物的衬底上; 将蚀刻气体施加到第一氮化物单晶的顶表面以在高位错密度区域中选择性地形成多个凹坑; 以及在所述第一氮化物单晶上生长第二氮化物单晶以保持所述凹坑为空白。

公开(公告)号：US20110300652A1

公开(公告)日：2011-12-08

申请号：US13211107

申请日：2011-08-16

申请人： Seong Eun Park ,  Bang Won OH ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

发明人： Seong Eun Park ,  Bang Won OH ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

IPC分类号： H01L33/60

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/0079 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/34333

摘要： There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.

摘要翻译： 提供了一种氮化物半导体发光器件及其制造方法。 所述氮化物半导体发光器件包括：用于生长氮化物单晶的衬底，所述衬底具有导电性; 在该基板上形成的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和多个量子阱层; 形成在有源层上的n型氮化物半导体层; 形成在所述基板的底部上的p电极; 以及形成在n型氮化物半导体层的顶部上的n电极。

公开(公告)号：US20080078986A1

公开(公告)日：2008-04-03

申请号：US11902396

申请日：2007-09-21

申请人： Seong Eun Park ,  Bang Won Oh ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

发明人： Seong Eun Park ,  Bang Won Oh ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/0079 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/34333

摘要： There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.

摘要翻译： 提供了一种氮化物半导体发光器件及其制造方法。 所述氮化物半导体发光器件包括：用于生长氮化物单晶的衬底，所述衬底具有导电性; 在该基板上形成的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和多个量子阱层; 形成在有源层上的n型氮化物半导体层; 形成在所述基板的底部上的p电极; 以及形成在n型氮化物半导体层的顶部上的n电极。

公开(公告)号：US08536026B2

公开(公告)日：2013-09-17

申请号：US11822185

申请日：2007-07-03

申请人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Young Min Park ,  Hak Hwan Kim ,  Seon Young Myoung ,  Sang Bum Lee ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

发明人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Young Min Park ,  Hak Hwan Kim ,  Seon Young Myoung ,  Sang Bum Lee ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

IPC分类号： H01L29/24 ,  H01L21/36 ,  H01L33/00

CPC分类号： C30B25/04 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24

摘要： A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.

摘要翻译： 一种在氮化物半导体层上选择性地生长其中形成掩模的氮化物半导体，其中形成有开口的方法。 氮化物半导体晶体选择性地生长在通过掩模中的开口暴露的氮化物半导体层的一部分上，氮化物半导体晶体形状为六角锥，并具有相对于氮化物半导体的顶表面倾斜的晶面。 这里，氮化物半导体晶体具有至少一个具有比氮化物半导体晶体的上部和下部区域倾斜角度大的晶面的中间应力消除区域，由中间应力消除区域的连续性产生的中间应力消除面积减轻应力 斜晶面。

公开(公告)号：US20080035951A1

公开(公告)日：2008-02-14

申请号：US11822185

申请日：2007-07-03

申请人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Young Min Park ,  Hak Hwan Kim ,  Seon Young Myoung ,  Sang Bum Lee ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

发明人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Young Min Park ,  Hak Hwan Kim ,  Seon Young Myoung ,  Sang Bum Lee ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

IPC分类号： H01L29/24 ,  H01L21/36 ,  H01L33/00

CPC分类号： C30B25/04 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24

摘要： A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.

摘要翻译： 一种在氮化物半导体层上选择性地生长其中形成掩模的氮化物半导体，其中形成有开口的方法。 氮化物半导体晶体选择性地生长在通过掩模中的开口暴露的氮化物半导体层的一部分上，氮化物半导体晶体形状为六角锥，并具有相对于氮化物半导体的顶表面倾斜的晶面。 这里，氮化物半导体晶体具有至少一个具有比氮化物半导体晶体的上部和下部区域倾斜角度大的晶面的中间应力消除区域，由中间应力消除区域的连续性产生的中间应力消除面积减轻应力 斜晶面。

公开(公告)号：US20080087907A1

公开(公告)日：2008-04-17

申请号：US11898542

申请日：2007-09-13

申请人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

发明人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

IPC分类号： H01L33/00

CPC分类号： H01L33/56 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light emitting diode package including: a package substrate having a mounting area and first and second wiring structures partially exposed in the mounting area; a light emitting diode having first and second electrodes, the light emitting diode mounted on the mounting area of the package substrate to allow the first and second electrodes to be connected to first and second bonding pads, respectively; a transparent cover mounted above the mounting area of the package substrate to hermetically seal a mounting space in which the light emitting diode is mounted; and a transparent electric insulation fluid filled in the mounting space of the hermetically sealed light emitting diode and having a refractive index smaller than a refractive index of a material forming the light emitting diode.

摘要翻译： 一种发光二极管封装，包括：具有安装区域的封装基板和在所述安装区域中部分地露出的第一和第二布线结构; 具有第一和第二电极的发光二极管，所述发光二极管分别安装在所述封装基板的安装区域上，以允许所述第一和第二电极分别连接到第一和第二焊盘; 透明盖，安装在封装基板的安装区域上方，以密封安装发光二极管的安装空间; 以及填充在所述密封发光二极管的安装空间中并且具有小于形成所述发光二极管的材料的折射率的折射率的透明电绝缘流体。

公开(公告)号：US08188654B2

公开(公告)日：2012-05-29

申请号：US13237564

申请日：2011-09-20

申请人： Grigory Onushkin ,  Gil Han Park ,  Jung Ja Yang ,  Young Jin Lee

发明人： Grigory Onushkin ,  Gil Han Park ,  Jung Ja Yang ,  Young Jin Lee

IPC分类号： H05B33/02

CPC分类号： H01L27/156 ,  F21K9/00 ,  H01L33/62 ,  H01L2224/49107 ,  H05B33/0821 ,  H01L2224/48091 ,  H01L2924/00014

摘要： An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K≧3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K−1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.

摘要翻译： 交流（AC）驱动的发光器件包括基板，K个在衬底的顶表面上排列成一排的第一发光二极管（LED）单元，其中K是满足K≥3的整数，K数 在所述基板的上表面上与所述第一LED单元的行平行配置的第二LED单元，以及在所述第一和第二LED单元的各行之间排列成行的第（K-1）个第三LED单元， 在基板的顶表面上。 交流驱动发光器件具有可在AC工作的LED电池之间的连接结构。

公开(公告)号：US20110298382A1

公开(公告)日：2011-12-08

申请号：US13209122

申请日：2011-08-12

申请人： Young Jin LEE ,  Byoung Own Min ,  Gil Han Park ,  Grigory Onushkin

发明人： Young Jin LEE ,  Byoung Own Min ,  Gil Han Park ,  Grigory Onushkin

IPC分类号： H05B37/00

CPC分类号： H05B33/0803 ,  H05B33/0821 ,  Y02B20/342 ,  Y10S362/80 ,  Y10S362/808

摘要： There is provided an LED driving circuit including: at least one ladder network circuit including: (n+1) number of first branches connected in parallel with one another by n number of first middle junction points between a first junction point and a second junction point, where n denotes an integer satisfying n≧2, (n+1) number of second branches connected in parallel with one another by n number of second middle junction points between the first junction point and the second junction point, the (n+1) number of second branches connected in parallel with the first branches; and n number of middle branches connecting the first and second middle junction points of an identical m sequence to each other, respectively, wherein each of the first and second, and middle branches comprises at least one LED device.

摘要翻译： 提供了一种LED驱动电路，包括：至少一个梯形网络电路，包括：（n + 1）数个第一分支，其在第一连接点和第二连接点之间彼此并联连接n个第一中间连接点 ，其中n表示满足n≥2的整数，（n + 1）个在第一连接点和第二连接点之间由n个第二中间连接点彼此并联连接的第二分支数，第（n + 1）个 ）与第一分支并联连接的第二分支的数量; 以及分别将相同m个序列的第一和第二中间连接点彼此连接的n个中间分支，其中第一和第二和中间分支中的每一个包括至少一个LED装置。

公开(公告)号：US08026675B2

公开(公告)日：2011-09-27

申请号：US12213506

申请日：2008-06-20

申请人： Young Jin Lee ,  Byoung Own Min ,  Gil Han Park ,  Grigory Onushkin

发明人： Young Jin Lee ,  Byoung Own Min ,  Gil Han Park ,  Grigory Onushkin

IPC分类号： H05B37/02

CPC分类号： H05B33/0803 ,  H05B33/0821 ,  Y02B20/342 ,  Y10S362/80 ,  Y10S362/808

摘要： There is provided an LED driving circuit including: at least one ladder network circuit including: (n+1) number of first branches connected in parallel with one another by n number of first middle junction points between a first junction point and a second junction point, where n denotes an integer satisfying n≧2, (n+1) number of second branches connected in parallel with one another by n number of second middle junction points between the first junction point and the second junction point, the (n+1) number of second branches connected in parallel with the first branches; and n number of middle branches connecting the first and second middle junction points of an identical m sequence to each other, respectively, wherein each of the first and second, and middle branches comprises at least one LED device.

摘要翻译： 提供了一种LED驱动电路，包括：至少一个梯形网络电路，包括：（n + 1）数个第一分支，其在第一连接点和第二连接点之间彼此并联连接n个第一中间连接点 ，其中n表示满足n≥2的整数，（n + 1）个在第一连接点和第二连接点之间由n个第二中间连接点彼此并联连接的第二分支数，第（n + 1）个 ）与第一分支并联连接的第二分支的数量; 以及分别将相同m个序列的第一和第二中间连接点彼此连接的n个中间分支，其中第一和第二和中间分支中的每一个包括至少一个LED装置。

公开(公告)号：US08754578B2

公开(公告)日：2014-06-17

申请号：US13482781

申请日：2012-05-29

申请人： Grigory Onushkin ,  Gil Han Park ,  Jung Ja Yang ,  Young Jin Lee

发明人： Grigory Onushkin ,  Gil Han Park ,  Jung Ja Yang ,  Young Jin Lee

IPC分类号： H05B33/02 ,  H01L27/15

CPC分类号： H01L27/156 ,  F21K9/00 ,  H01L33/62 ,  H01L2224/49107 ,  H05B33/0821 ,  H01L2224/48091 ,  H01L2924/00014

摘要： An alternating current (AC) driven light emitting device includes a substrate, K number of first light emitting diode (LED) cells arranged in a row on a top surface of the substrate, where K is an integer satisfying K≧3, K number of second LED cells arranged in a row parallel to the row of the first LED cells on the top surface of the substrate, and (K−1) number of third LED cells arranged in a row between the respective rows of the first and second LED cells on the top surface of the substrate. The AC driven light emitting device has a connection structure between LED cells to be operable at an AC.

摘要翻译： 交流（AC）驱动的发光器件包括基板，K个在衬底的顶表面上排列成一排的第一发光二极管（LED）单元，其中K是满足K≥3的整数，K数 在所述基板的上表面上与所述第一LED单元的行平行配置的第二LED单元，以及在所述第一和第二LED单元的各行之间排列成行的第（K-1）个第三LED单元， 在基板的顶表面上。 交流驱动发光器件具有可在AC工作的LED电池之间的连接结构。