公开(公告)号：US20110300652A1

公开(公告)日：2011-12-08

申请号：US13211107

申请日：2011-08-16

申请人： Seong Eun Park ,  Bang Won OH ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

发明人： Seong Eun Park ,  Bang Won OH ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

IPC分类号： H01L33/60

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/0079 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/34333

摘要： There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.

摘要翻译： 提供了一种氮化物半导体发光器件及其制造方法。 所述氮化物半导体发光器件包括：用于生长氮化物单晶的衬底，所述衬底具有导电性; 在该基板上形成的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和多个量子阱层; 形成在有源层上的n型氮化物半导体层; 形成在所述基板的底部上的p电极; 以及形成在n型氮化物半导体层的顶部上的n电极。

公开(公告)号：US20080099781A1

公开(公告)日：2008-05-01

申请号：US11898955

申请日：2007-09-18

申请人： Rak Jun Choi ,  Kureshov Vladimir ,  Bang Won Oh ,  Gil Han Park ,  Hee Seok Park ,  Seong Eun Park ,  Young Min Park ,  Min Ho Kim

发明人： Rak Jun Choi ,  Kureshov Vladimir ,  Bang Won Oh ,  Gil Han Park ,  Hee Seok Park ,  Seong Eun Park ,  Young Min Park ,  Min Ho Kim

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/007 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

摘要： A method of manufacturing a III group nitride semiconductor thin film and a method of manufacturing a nitride semiconductor light emitting device employing the III group nitride semiconductor thin film manufacturing method, the III group nitride semiconductor thin film manufacturing method including: growing a first nitride single crystal on a substrate for growing a nitride; applying an etching gas to a top surface of the first nitride single crystal to selectively form a plurality of pits in a high dislocation density area; and growing a second nitride single crystal on the first nitride single crystal to maintain the pits to be void.

摘要翻译： 一种III族氮化物半导体薄膜的制造方法以及使用该III族氮化物半导体薄膜的氮化物半导体发光元件的制造方法，其特征在于，包括：生长第一氮化物单晶 在用于生长氮化物的衬底上; 将蚀刻气体施加到第一氮化物单晶的顶表面以在高位错密度区域中选择性地形成多个凹坑; 以及在所述第一氮化物单晶上生长第二氮化物单晶以保持所述凹坑为空白。

公开(公告)号：US20080078986A1

公开(公告)日：2008-04-03

申请号：US11902396

申请日：2007-09-21

申请人： Seong Eun Park ,  Bang Won Oh ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

发明人： Seong Eun Park ,  Bang Won Oh ,  Gil Han Park ,  Min Ho Kim ,  Rak Jun Choi ,  Young Min Park ,  Hee Seok Park

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/0079 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/34333

摘要： There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.

摘要翻译： 提供了一种氮化物半导体发光器件及其制造方法。 所述氮化物半导体发光器件包括：用于生长氮化物单晶的衬底，所述衬底具有导电性; 在该基板上形成的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和多个量子阱层; 形成在有源层上的n型氮化物半导体层; 形成在所述基板的底部上的p电极; 以及形成在n型氮化物半导体层的顶部上的n电极。

公开(公告)号：US08952400B2

公开(公告)日：2015-02-10

申请号：US13325225

申请日：2011-12-14

申请人： Myung Hoon Jung ,  Hyun chul Lim ,  Sul Hee Kim ,  Rak Jun Choi

发明人： Myung Hoon Jung ,  Hyun chul Lim ,  Sul Hee Kim ,  Rak Jun Choi

IPC分类号： H01L33/00 ,  H01L33/10 ,  F21K99/00 ,  H01L33/02 ,  F21Y101/02 ,  H01L21/02 ,  H01L33/22 ,  H01L33/24

CPC分类号： H01L33/20 ,  F21K9/23 ,  F21Y2115/10 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/10 ,  H01L33/16 ,  H01L33/22 ,  H01L33/24 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/10158 ,  H01L2924/00014

摘要： A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.

摘要翻译： 公开了一种发光二极管。 所公开的发光二极管包括包括第一导电型半导体层，有源层和第二导电型半导体层的发光结构。 第一导电型半导体层，有源层和第二导电型半导体层被设置成沿相同的方向彼此相邻。 活性层包括至少一次交替层叠的阱和势垒层。 阱层具有比阻挡层更窄的能带隙。 发光二极管还包括设置在第一导电型半导体层中的掩模层，设置在第一导电型半导体层上的第一电极和设置在第二导电型半导体层上的第二电极。 第一导电型半导体层形成有至少一个凹部。

公开(公告)号：US20120119254A1

公开(公告)日：2012-05-17

申请号：US13357980

申请日：2012-01-25

申请人： Yong Tae MOON ,  Yong Seon Song ,  Sung Hoon Jung ,  Joong Seo Park ,  Sang Jun Lee ,  Jeong Tak Oh ,  Rak Jun Choi

发明人： Yong Tae MOON ,  Yong Seon Song ,  Sung Hoon Jung ,  Joong Seo Park ,  Sang Jun Lee ,  Jeong Tak Oh ,  Rak Jun Choi

IPC分类号： H01L33/32 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/025 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first conductive type first semiconductor layer, an active layer, a second conductive type second semiconductor layer, a reliability enhancement layer, and a second conductive type third semiconductor layer. The active layer is disposed on the first conductive type first semiconductor layer. The second conductive type second semiconductor layer is disposed on the active layer. The reliability enhancement layer is disposed on the second conductive type second semiconductor layer. The second conductive type third semiconductor layer is disposed on the reliability enhancement layer and comprises a light extraction pattern. The reliability enhancement layer and the active layer are spaced apart from each other by a distance of 0.3 μm to 5 μm.

摘要翻译： 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括第一导电型第一半导体层，有源层，第二导电型第二半导体层，可靠性增强层和第二导电型第三半导体层。 有源层设置在第一导电类型的第一半导体层上。 第二导电型第二半导体层设置在有源层上。 可靠性增强层设置在第二导电型第二半导体层上。 第二导电类型的第三半导体层设置在可靠性增强层上并且包括光提取图案。 可靠性增强层和有源层彼此隔开0.3μm至5μm的距离。

公开(公告)号：US07955957B2

公开(公告)日：2011-06-07

申请号：US12612206

申请日：2009-11-04

申请人： Rak Jun Choi ,  Sakai Shiro ,  Naoi Yoshiki

发明人： Rak Jun Choi ,  Sakai Shiro ,  Naoi Yoshiki

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/28 ,  H01L21/3205

CPC分类号： H01L33/16 ,  H01L33/007 ,  H01L33/04 ,  H01L33/12

摘要： Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so called r-plane) sapphire substrate by use of a MOCVD apparatus under atmospheric pressure while controlling a temperature of the substrate within a range from 850 to 950 degrees Celsius, and then, GaN-based compound, such as GaN, AlGaN or the like, is epitaxially grown on the buffer layer at a high temperature. The group III-nitride semiconductor light emitting device is fabricated by using the group III-nitride semiconductor thin film as a base layer.

摘要翻译： 本文公开了使用该III族氮化物半导体薄膜的高质量III族氮化物半导体薄膜和III族氮化物半导体发光器件。 为了获得III族氮化物半导体薄膜，在（1-102）面（所谓的r面）蓝宝石衬底上通过使用MOCVD装置在大气压下形成AlInN缓冲层，同时控制 衬底在850至950摄氏度的范围内，然后在高温下在缓冲层上外延生长GaN基化合物，例如GaN，AlGaN等。 通过使用III族氮化物半导体薄膜作为基底层来制造III族氮化物半导体发光器件。

公开(公告)号：US20140110663A1

公开(公告)日：2014-04-24

申请号：US14056278

申请日：2013-10-17

申请人： Jae Hoon CHOI ,  Buem Yeon Lee ,  Ki Young Song ,  Rak Jun Choi

发明人： Jae Hoon CHOI ,  Buem Yeon Lee ,  Ki Young Song ,  Rak Jun Choi

IPC分类号： H01L33/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02444 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12 ,  H01L33/22 ,  H01L33/387 ,  H01L33/42 ,  Y10S977/734 ,  Y10S977/95

摘要： A light emitting device includes a nano-structure, a first semiconductor layer on the nano-structure, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. The nano-structure includes a graphene layer provided under the first semiconductor layer to make contact with the first semiconductor layer; and a plurality of nano-textures extending from a top surface of the graphene layer to the first semiconductor layer and in contact with the first semiconductor layer.

摘要翻译： 发光器件包括纳米结构，纳米结构上的第一半导体层，第一半导体层上的有源层和有源层上的第二导电半导体层。 纳米结构包括设置在第一半导体层下面以与第一半导体层接触的石墨烯层; 以及从石墨烯层的顶表面延伸到第一半导体层并与第一半导体层接触的多个纳米纹理。

公开(公告)号：US20140054542A1

公开(公告)日：2014-02-27

申请号：US13969811

申请日：2013-08-19

申请人： Young Hun HAN ,  Rak Jun Choi ,  Jeong Tak Oh

发明人： Young Hun HAN ,  Rak Jun Choi ,  Jeong Tak Oh

IPC分类号： H01L33/12

CPC分类号： H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2924/00014

摘要： The light emitting device includes a first conductive semiconductor layer; a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and a plurality of barrier layers, wherein the well layers include a first well layer and a second well layer adjacent to the first well layer. The barrier layers include a first barrier layer disposed between the first and second well layers, and the first barrier layer includes a plurality of semiconductor layers having an energy bandgap wider than an energy bandgap of the first well layer. At least two layers of the plurality of semiconductor layers are adjacent to the first and second well layers, and have aluminum contents greater than that of the other layer.

摘要翻译： 发光器件包括第一导电半导体层; 在所述第一导电半导体层上的第二导电半导体层; 以及第一和第二导电半导体层之间的有源层。 有源层包括多个阱层和多个势垒层，其中阱层包括与第一阱层相邻的第一阱层和第二阱层。 阻挡层包括设置在第一阱层和第二阱层之间的第一势垒层，并且第一势垒层包括具有比第一阱层的能带隙宽的能带隙的多个半导体层。 多个半导体层中的至少两层与第一和第二阱层相邻，并且铝含量大于另一层的铝含量。

公开(公告)号：US20120080660A1

公开(公告)日：2012-04-05

申请号：US13325225

申请日：2011-12-14

申请人： Myung Hoon JUNG ,  Hyun chul Lim ,  Sul Hee Kim ,  Rak Jun Choi

发明人： Myung Hoon JUNG ,  Hyun chul Lim ,  Sul Hee Kim ,  Rak Jun Choi

IPC分类号： H01L33/04 ,  H01L33/62

CPC分类号： H01L33/20 ,  F21K9/23 ,  F21Y2115/10 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/10 ,  H01L33/16 ,  H01L33/22 ,  H01L33/24 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/10158 ,  H01L2924/00014

摘要： A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.

摘要翻译： 公开了一种发光二极管。 所公开的发光二极管包括包括第一导电型半导体层，有源层和第二导电型半导体层的发光结构。 第一导电型半导体层，有源层和第二导电型半导体层被设置成沿相同的方向彼此相邻。 活性层包括至少一次交替层叠的阱和势垒层。 阱层具有比阻挡层更窄的能带隙。 发光二极管还包括设置在第一导电型半导体层中的掩模层，设置在第一导电型半导体层上的第一电极和设置在第二导电型半导体层上的第二电极。 第一导电型半导体层形成有至少一个凹部。

公开(公告)号：US20070045654A1

公开(公告)日：2007-03-01

申请号：US11512380

申请日：2006-08-30

申请人： Rak Jun Choi ,  Sakai Shiro ,  Naoi Yoshiki

发明人： Rak Jun Choi ,  Sakai Shiro ,  Naoi Yoshiki

IPC分类号： H01L33/00

CPC分类号： H01L33/16 ,  H01L33/007 ,  H01L33/04 ,  H01L33/12

摘要： Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so called r-plane) sapphire substrate by use of a MOCVD apparatus under atmospheric pressure while controlling a temperature of the substrate within a range from 850 to 950 degrees Celsius, and then, GaN-based compound, such as GaN, AlGaN or the like, is epitaxially grown on the buffer layer at a high temperature. The group III-nitride semiconductor light emitting device is fabricated by using the group III-nitride semiconductor thin film as a base layer.

摘要翻译： 本文公开了使用该III族氮化物半导体薄膜的高质量III族氮化物半导体薄膜和III族氮化物半导体发光器件。 为了获得III族氮化物半导体薄膜，在（1-102）面（所谓的r面）蓝宝石衬底上通过使用MOCVD装置在大气压下形成AlInN缓冲层，同时控制 衬底在850至950摄氏度的范围内，然后在高温下在缓冲层上外延生长GaN基化合物，例如GaN，AlGaN等。 通过使用III族氮化物半导体薄膜作为基底层来制造III族氮化物半导体发光器件。