公开(公告)号：US20100289431A1

公开(公告)日：2010-11-18

申请号：US12848590

申请日：2010-08-02

申请人： Dong Sel Kim ,  Chang Tae Kim

发明人： Dong Sel Kim ,  Chang Tae Kim

IPC分类号： H05B37/02

CPC分类号： H05B33/0845 ,  G02F2001/133614 ,  G09G3/3406 ,  G09G3/3413 ,  G09G2320/0242 ,  G09G2320/064 ,  H05B33/086

摘要： The present disclosure provides a dimming control method for a display having a light-emitting device which includes: a first light-emitting body including an active layer generating a first light by recombination of electrons and holes; and a second light-emitting body excited by the first light and emitting a second light having a longer wavelength than the first light, the dimming control method including: controlling the power which will be supplied to the light-emitting device according to a dimming request; and adjusting the brightness of the display according to the controlled power using the second light-emitting body containing a first fluorescent material having a characteristic that chromaticity coordinates are shifted in a first direction according to the power control and a second fluorescent material having a characteristic that chromaticity coordinates are shifted in a second direction opposite to the first direction according to the power control.

摘要翻译： 本发明提供了一种具有发光器件的显示器的调光控制方法，该发光器件包括：第一发光体，包括通过电子和空穴的复合产生第一光的有源层; 以及由所述第一光被激发并发射比所述第一光更长波长的第二光的第二发光体，所述调光控制方法包括：根据调光请求控制将提供给所述发光装置的功率 ; 以及使用包含具有根据功率控制使色度坐标沿第一方向偏移的特性的第一荧光材料的第二发光体和根据功率控制的第二荧光材料调节显示器的亮度的第二荧光材料， 根据功率控制，色度坐标沿与第一方向相反的第二方向移位。

公开(公告)号：US20060261344A1

公开(公告)日：2006-11-23

申请号：US10544271

申请日：2005-03-04

申请人： Tae-Kyung Yoo ,  Chang Tae Kim ,  Eun Park ,  Soo Kun Jeon

发明人： Tae-Kyung Yoo ,  Chang Tae Kim ,  Eun Park ,  Soo Kun Jeon

IPC分类号： H01L31/0312

CPC分类号： H01L33/32

摘要： The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, an SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer having an n-type conductivity and a thickness of 5 Å to 500 Å for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer. Generally, in III-nitride semiconductor light emitting devices, if a p-side electrode is formed directly on a p-type nitride semiconductor, high contact resistance is generated due to a high energy bandgap and low doping efficiency of the p-type nitride semiconductor. This makes the efficiency of the device degraded. According to the present invention, however, a SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor and a p-side electrode. Therefore, the present invention can solve the conventional problem.

摘要翻译： 本发明涉及包含多个III族氮化物半导体层的III族氮化物半导体发光器件，所述III族氮化物半导体层包括通过电子和空穴的复合发射光的有源层，所述多个III族氮化物半导体层具有p型III- （a> = 0，b> 0，c> = 0）的氮化物半导体层， ，a + c> 0）层，（a + c> 0）层（a（c​​ + > = 0，b> 0，c> = 0，a + c> 0）层，对于要注入到p型III族氮化物半导体中的空穴，具有n型导电性和厚度为5埃至500埃 （a> = 0，b> 0，...，b）上形成的p侧电极， c> = 0，a + c> 0）层。 通常，在III族氮化物半导体发光器件中，如果p侧电极直接形成在p型氮化物半导体上，则由于p型氮化物半导体的高能带隙和低掺杂效率而产生高接触电阻 。 这使得设备的效率降低。 然而，根据本发明，一个或更多个（a> = 0，b> 0，c> = 0） ，可以掺杂高浓度的a + c> 0）层介于p型氮化物半导体和p侧电极之间。 因此，本发明可以解决常规问题。

公开(公告)号：US20110001158A1

公开(公告)日：2011-01-06

申请号：US12865721

申请日：2008-09-19

申请人： Chang Tae Kim ,  Tae Hee Lee ,  Gi Yeon Nam

发明人： Chang Tae Kim ,  Tae Hee Lee ,  Gi Yeon Nam

IPC分类号： H01L33/32

CPC分类号： H01L33/12 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/22

摘要： The present disclosure relates to a Ill-nitride semiconductor light emitting device, comprising: a substrate with a plurality of protrusions formed thereon, each of the plurality of protrusions having three acute portions and three obtuse portions; and a plurality of Ill-nitride semiconductor layers formed over the substrate and including an active layer for generating light by recombination of electrons and holes.

摘要翻译： 本发明涉及一种III族氮化物半导体发光器件，包括：具有形成在其上的多个突起的衬底，所述多个突起中的每一个具有三个尖锐部分和三个钝角部分; 以及形成在所述基板上并且包括通过电子和空穴的复合产生光的有源层的多个III族氮化物半导体层。

公开(公告)号：US20100140656A1

公开(公告)日：2010-06-10

申请号：US12647860

申请日：2009-12-28

申请人： Chang Tae Kim ,  Gi Yeon NAM ,  Tae Hee LEE

发明人： Chang Tae Kim ,  Gi Yeon NAM ,  Tae Hee LEE

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present disclosure relates to a semiconductor light-emitting device generating light by recombination of electrons and holes. The semiconductor light-emitting device includes: a first bonding electrode and a second bonding electrode supplying the current for the recombination of the electrons and holes; a first branch electrode and a second branch electrode extended from the first bonding electrode; and a third branch electrode extended from the second bonding electrode, located between the first branch electrode and the second branch electrode, and having a first interval from the first branch electrode and a second interval smaller than the first interval from the second branch electrode. The second branch electrode is located farther from the center of the light-emitting device than the first branch electrode, and the second branch electrode is located farther from the center of the light-emitting device than the third branch electrode.

摘要翻译： 本公开涉及通过电子和空穴的复合产生光的半导体发光器件。 半导体发光器件包括：第一接合电极和提供用于电子和空穴的复合的电流的第二接合电极; 从所述第一接合电极延伸的第一分支电极和第二分支电极; 以及第三分支电极，其从所述第二接合电极延伸，位于所述第一分支电极和所述第二分支电极之间，并且具有从所述第一分支电极起的第一间隔，以及距所述第二分支电极小于所述第一间隔的第二间隔。 第二分支电极位于比第一分支电极更远离发光器件的中心，并且第二分支电极位于比第三分支电极更远离发光器件的中心的位置。

公开(公告)号：US20100289036A1

公开(公告)日：2010-11-18

申请号：US12811247

申请日：2008-12-31

申请人： Chang Tae Kim ,  Tae Hee Lee

发明人： Chang Tae Kim ,  Tae Hee Lee

IPC分类号： H01L33/02 ,  H01L33/00 ,  H01L33/30

CPC分类号： H01L33/20 ,  H01L33/32

摘要： The present invention provides a Ill-nitride semiconductor light emitting device and a method for manufacturing the same including: a substrate; a plurality of Ill-nitride semiconductor layers formed on the substrate, and provided with an active layer generating light by recombination of electrons and holes; a boundary surface defined between the substrate and the plurality of Ill-nitride semiconductor layers; and a pair of slant surfaces formed from the boundary surface on the substrate and the plurality of Ill-nitride semiconductor layers so as to emit light generated in the active layer to the outside.

摘要翻译： 本发明提供一种III族氮化物半导体发光器件及其制造方法，包括：衬底; 形成在基板上的多个III族氮化物半导体层，并且具有通过电子和空穴的复合产生光的有源层; 限定在所述基板和所述多个III族氮化物半导体层之间的边界面; 以及从衬底上的边界表面和多个III族氮化物半导体层形成的一对倾斜表面，以便将在有源层中产生的光发射到外部。

公开(公告)号：US07795610B2

公开(公告)日：2010-09-14

申请号：US12195741

申请日：2008-08-21

申请人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

发明人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

IPC分类号： H01L29/06 ,  H01L29/12

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval.

摘要翻译： 本公开涉及通过电子和空穴的复合产生光的半导体发光器件，其包括：用于提供电子和空穴中的一个的第一指状电极，提供另一个电子和空穴的第二指状电极， 并且以第一间隔与第一指状电极间隔开; 以及电连接到第一指状电极的第三指状电极，并且以比第一间隔小的第二间隔与第二指状电极间隔开。

公开(公告)号：US20100133579A1

公开(公告)日：2010-06-03

申请号：US12648707

申请日：2009-12-29

申请人： Chang Tae Kim ,  Hyun Su An ,  Hyun Suk Kim

发明人： Chang Tae Kim ,  Hyun Su An ,  Hyun Suk Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/44

摘要： The present disclosure relates to a III-nitride semiconductor light-emitting device including: a plurality of III-nitride semiconductor layers having a first III-nitride semiconductor layer having a first conductivity type, a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; a bonding pad electrically connected to the plurality of III-nitride semiconductor layers; a protection film disposed over the bonding pad; and a buffer pad disposed between the bonding pad and the protection film and formed to expose the bonding pad.

摘要翻译： 本发明涉及一种III族氮化物半导体发光器件，其包括：多个具有第一导电类型的第一III族氮化物半导体层的III族氮化物半导体层，具有第二导电类型的第二III族氮化物半导体层 不同于第一导电类型的有源层和设置在第一III族氮化物半导体层和第二III族氮化物半导体层之间的有源层，并且通过电子和空穴的复合产生光; 电连接到所述多个III族氮化物半导体层的焊盘; 设置在所述接合焊盘上的保护膜; 以及设置在所述接合焊盘和所述保护膜之间并且被形成为暴露所述接合焊盘的缓冲焊盘。

公开(公告)号：US20100102338A1

公开(公告)日：2010-04-29

申请号：US12647731

申请日：2009-12-28

申请人： Chang Tae Kim ,  Min Gyu Na

发明人： Chang Tae Kim ,  Min Gyu Na

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/08 ,  H01L33/22 ,  H01L33/32

摘要： The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate, a plurality of III-nitride semiconductor layers including a first nitride semiconductor layer formed over the substrate and having a first conductivity type, a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a second conductivity type different from the first conductivity type, and an active layer disposed between the first nitride semiconductor layer and the second nitride semiconductor layer and generating light by recombination of electrons and holes, and an opening formed along the plurality of III-nitride semiconductor layers from the substrate, and including a first scattering surface scattering the light generated in the active layer and a second scattering surface having a different slope from that of the first scattering surface.

摘要翻译： 本发明涉及一种III族氮化物半导体发光器件，其包括：衬底，多个III族氮化物半导体层，其包括形成在衬底上并具有第一导电类型的第一氮化物半导体层，形成在第二氮化物半导体层上的第二氮化物半导体层 所述第一氮化物半导体层具有不同于所述第一导电类型的第二导电类型，以及有源层，设置在所述第一氮化物半导体层和所述第二氮化物半导体层之间，并且通过电子和空穴的复合产生光，以及沿着 所述多个III族氮化物半导体层从所述基板排出，并且包括使在所述有源层中产生的光散射的第一散射面和与所述第一散射面的斜率不同的第二散射面。

公开(公告)号：US06828599B2

公开(公告)日：2004-12-07

申请号：US10381988

申请日：2003-06-12

申请人： Chang Tae Kim

发明人： Chang Tae Kim

IPC分类号： H01L2358

CPC分类号： H01L33/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/00014

摘要： The present invention relates to a semiconductor LED device comprising a pumping layer with high light emitting efficiency and an active layer with smaller bandgap converting the absorbed light into any kinds of light of wavelength as required, which generates light from the AlGaInN pumping layer containing less In, projects the rays of light on the active layer containing more In, lets the required light of wavelength emit and decreases the blue shift caused by electric current, thereby increasing the light emitting efficiency and emitting lights with more than two wavelengths from one Led device. This invention enables to obtain various light of wavelength from one device and form the element through only one epitaxy process, thereby increasing reproductivity, yield, and efficiency by not using the fluorescent materials lowering the efficiency when forming white light.

摘要翻译： 本发明涉及一种半导体LED器件，其包括具有高发光效率的泵浦层和具有较小带隙的有源层，其将吸收的光转换成所需的波长的任何种类的光，其从包含较少In的AlGaInN泵浦层产生光 在含有更多In的有源层上投射光线，使所需波长的光发射并减少由电流引起的蓝移，从而增加发光效率并从一个LED装置发射具有两个以上波长的光。 本发明能够从一个器件获得各种波长的光并通过仅一个外延工艺形成元件，从而通过不使用在形成白光时降低效率的荧光材料来提高再现性，产率和效率。

公开(公告)号：US20100102351A1

公开(公告)日：2010-04-29

申请号：US12646150

申请日：2009-12-23

申请人： Chang Tae Kim ,  Tae Hee Lee ,  Hyun Min Jung ,  Gi Yeon Nam

发明人： Chang Tae Kim ,  Tae Hee Lee ,  Hyun Min Jung ,  Gi Yeon Nam

IPC分类号： H01L33/00 ,  H01L21/302

CPC分类号： H01L33/22 ,  H01L33/007

摘要： The present disclosure relates to a semiconductor light-emitting device and a method of manufacturing the same, and more particularly, to a III-nitride semiconductor light-emitting device which improves external quantum efficiency by forming an irregular portion on a surface of a semiconductor layer by a protrusion formed on a substrate, and a method of manufacturing the same.

摘要翻译： 本发明涉及一种半导体发光器件及其制造方法，更具体地说，涉及通过在半导体层的表面上形成不规则部分来提高外部量子效率的III族氮化物半导体发光器件 通过形成在基板上的突起及其制造方法。