公开(公告)号：US06495906B2

公开(公告)日：2002-12-17

申请号：US10078046

申请日：2002-02-07

申请人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  Stephen Wallace ,  James Drage ,  Hui-Jung Wu ,  Neil Viernes ,  Lisa B. Brungardt

发明人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  Stephen Wallace ,  James Drage ,  Hui-Jung Wu ,  Neil Viernes ,  Lisa B. Brungardt

IPC分类号： H01L2358

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/3125 ,  H01L21/31695 ,  Y10T428/31663

摘要： The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with a relatively high porosity, low dielectric constant, silicon-containing polymer film composition.

摘要翻译： 本发明涉及低介电常数纳米多孔二氧化硅薄膜及其制造方法。 具有适合于生产集成电路的晶片，其表面上存在多个凸起线和/或电子元件的衬底具有相对较高的孔隙率低介电常数的含硅聚合物膜组合物 。

公开(公告)号：US06455130B1

公开(公告)日：2002-09-24

申请号：US09706027

申请日：2000-11-03

申请人： Stephen Wallace ,  Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  James S. Drage

发明人： Stephen Wallace ,  Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  James S. Drage

IPC分类号： B32B328

CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  Y10T428/24537 ,  Y10T428/24595 ,  Y10T428/249978 ,  Y10T428/249979 ,  H01L2924/00

摘要： The present invention relates to nanoporous dielectric films and to a process for their manufacture. A substrate having a plurality of raised lines on its surface is provided with a relatively high porosity, low dielectric constant, silicon containing polymer composition positioned between the raised lines and a relatively low porosity, high dielectric constant, silicon containing composition positioned on the lines.

摘要翻译： 本发明涉及纳米多孔介电膜及其制造方法。 在其表面上具有多个凸起线的基底设置有相对较高的孔隙率，低介电常数，位于凸起线之间的含硅聚合物组合物和位于该线上的较低孔隙率，高介电常数的含硅组合物。

公开(公告)号：US06395651B1

公开(公告)日：2002-05-28

申请号：US09111084

申请日：1998-07-07

申请人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  Stephen Wallace ,  James Drage ,  Hui-Jung Wu ,  Neil Viernes ,  Lisa B. Brungardt

发明人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  Stephen Wallace ,  James Drage ,  Hui-Jung Wu ,  Neil Viernes ,  Lisa B. Brungardt

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/3125 ,  H01L21/31695 ,  Y10T428/31663

摘要： The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with a relatively high porosity, low dielectric constant, silicon-containing polymer film composition.

公开(公告)号：US6022812A

公开(公告)日：2000-02-08

申请号：US111083

申请日：1998-07-07

申请人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick

发明人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick

IPC分类号： C23C16/42 ,  B05D3/04 ,  B05D7/24 ,  C23C18/12 ,  H01L21/314 ,  H01L21/316

CPC分类号： C23C18/1212 ,  B05D1/60 ,  B05D3/046 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02263 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/31695

摘要： A process for the manufacture of nanoporous silica dielectric films by vapor deposition of silica precursors on a substrate. The process provides for vaporizing at least one alkoxysilane composition; depositing the vaporized alkoxysilane composition onto a substrate; exposing the deposited alkoxysilane composition to a water vapor, and either an acid or a base vapor; and drying the exposed alkoxysilane composition, thereby forming a relatively high porosity, low dielectric constant, silicon containing polymer composition on the substrate.

摘要翻译： 一种用于通过在基底上气相沉积二氧化硅前体来制造纳米多孔二氧化硅介电膜的方法。 该方法提供了蒸发至少一种烷氧基硅烷组合物; 将蒸发的烷氧基硅烷组合物沉积到基底上; 将沉积的烷氧基硅烷组合物暴露于水蒸汽，以及酸或碱蒸气; 并干燥暴露的烷氧基硅烷组合物，由此在基材上形成相对较高的孔隙率低介电常数的含硅聚合物组合物。

公开(公告)号：US06503850B1

公开(公告)日：2003-01-07

申请号：US09046473

申请日：1998-03-25

申请人： Stephen Wallace ,  Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  James S. Drage ,  Lisa Beth Brungardt

发明人： Stephen Wallace ,  Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  James S. Drage ,  Lisa Beth Brungardt

IPC分类号： H01L21469

CPC分类号： H01L21/02203 ,  B01J13/0091 ,  C01B33/1585 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/31695

摘要： The present invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. A precursor of an alkoxysilane, and low and high volatility solvents are mixed at a pH of about 2-5, raised to a pH of about 8 or above with a low volatility base and deposited on a semiconductor substrate. After exposure to atmospheric moisture, a nanoporous dielectric film is produced on the substrate.

摘要翻译： 本发明涉及纳米多孔介电膜及其制造方法。 这种膜可用于集成电路的生产。 将烷氧基硅烷的前体和低挥发性溶剂和低挥发性溶剂以约2-5的pH混合，以低挥发性碱升高至约8或更高的pH并沉积在半导体衬底上。 在暴露于大气湿度之后，在衬底上产生纳米多孔介电膜。

公开(公告)号：US6048804A

公开(公告)日：2000-04-11

申请号：US54262

申请日：1998-04-03

申请人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  Stephen Wallace

发明人： Douglas M. Smith ,  Teresa Ramos ,  Kevin H. Roderick ,  Stephen Wallace

IPC分类号： C01B33/12 ,  C23C18/12 ,  H01L21/314 ,  H01L21/316 ,  H01L21/208

CPC分类号： H01L21/31695 ,  C23C18/1212 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343

摘要： A process for forming a nanoporous dielectric coating on a substrate. The process follows the steps of blending an alkoxysilane with a solvent composition and optional water; depositing the mixture onto a substrate while evaporating at least a portion of the solvent composition; placing the substrate in a sealed chamber and evacuating the chamber to a pressure below atmospheric pressure; exposing the substrate to water vapor at a pressure below atmospheric pressure and then exposing the substrate to base vapor.

摘要翻译： 一种在衬底上形成纳米多孔电介质涂层的方法。 该方法遵循将烷氧基硅烷与溶剂组合物和任选的水共混的步骤; 将混合物沉积在基材上同时蒸发至少一部分溶剂组合物; 将基板放置在密封室中并将室抽空至低于大气压的压力; 在低于大气压的压力下将基底暴露于水蒸汽，然后将基底暴露于基础蒸气。

公开(公告)号：US06610145B2

公开(公告)日：2003-08-26

申请号：US09956361

申请日：2001-09-19

申请人： Neil Hendricks ,  Douglas M. Smith ,  Teresa Ramos ,  James Drage

发明人： Neil Hendricks ,  Douglas M. Smith ,  Teresa Ramos ,  James Drage

IPC分类号： B05C1102

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/31695

摘要： A process for forming a uniform nanoporous dielectric film on a substrate. The process includes horizontally positioning a flat substrate within a cup; depositing a liquid alkoxysilane composition onto the substrate surface; covering the cup such that the substrate is enclosed therein; spinning the covered cup and spreading the alkoxysilane composition evenly on the substrate surface; exposing the alkoxysilane composition to water vapor and base vapor to thereby form a gel; and then curing the gel. The invention also provides an apparatus for spin depositing a liquid coating onto a substrate. The apparatus has a cylindrical cup with an open top section and removable cover which closes the top. A vapor injection port extends through the center of the cover. Suitable means hold a substrate centered within the cup and spin the cup.

公开(公告)号：US06518205B1

公开(公告)日：2003-02-11

申请号：US09714010

申请日：2000-11-16

申请人： Hui-Jung Wu ,  James S. Drage ,  Douglas M. Smith ,  Teresa Ramos ,  Stephen Wallace ,  Neil Viernes

发明人： Hui-Jung Wu ,  James S. Drage ,  Douglas M. Smith ,  Teresa Ramos ,  Stephen Wallace ,  Neil Viernes

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/3125 ,  H01L21/31695 ,  Y10T428/31663

摘要： A process for treating silica dielectric film on a substrate, which includes reacting a suitable hydrophilic silica film with an effective amount of a multifunctional surface modification agent. The film is present on a substrate and optionally has a pore structure with hydrophilic pore surfaces, and the reaction is conducted for a period of time sufficient for said surface modification agent to penetrate said pore structure and produce a treated silica film having a dielectric constant of about 3 or less, wherein the surface modification agent is hydrophobic and suitable for silylating or capping silanol moieties on such hydrophilic surfaces. Dielectric films and integrated circuits including such films are also disclosed.

摘要翻译： 一种处理基板上的二氧化硅电介质膜的方法，其包括使合适的亲水二氧化硅膜与有效量的多官能表面改性剂反应。 薄膜存在于基材上，任选具有亲水孔表面的孔结构，反应进行足以使所述表面改性剂渗透所述孔结构的时间，并产生介电常数为 约3或更少，其中表面改性剂是疏水性的并且适合于在这些亲水性表面上甲硅烷基化或封端硅烷醇部分。 还公开了包括这种膜的介电膜和集成电路。

公开(公告)号：US06372666B1

公开(公告)日：2002-04-16

申请号：US09379866

申请日：1999-08-24

申请人： Teresa Ramos ,  Douglas M. Smith ,  James Drage ,  Rick Roberts

发明人： Teresa Ramos ,  Douglas M. Smith ,  James Drage ,  Rick Roberts

IPC分类号： B05D306

CPC分类号： H01L21/31695 ,  C23C18/06 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1275 ,  C23C18/1291 ,  C23C18/1295 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/76828 ,  H01L21/76829

摘要： A process for forming a nanoporous silica dielectric coating on a substrate. A substrate containing a deposited film is suspended within a sealable hotplate, while remaining free of contact with the hotplate. The hotplate is sealed and an inert gas is flowed across the substrate. The hotplate is heated to a temperature of from about 350° C. or higher, and the substrate is forced to contact the heated hotplate. The substrate is heated for a time that sufficiently removes outgassing remnants from the resultant nanoporous dielectric coating.

摘要翻译： 一种在衬底上形成纳米多孔二氧化硅电介质涂层的方法。 将含有沉积膜的基材悬浮在可密封的热板内，同时不与电热板接触。 电热板被密封，惰性气体流过基板。 将加热板加热至约350℃或更高的温度，并且将基板强制接触加热的热板。 将基底加热一段时间，以充分去除所得纳米多孔介电涂层的除气残余物。

公开(公告)号：US06645878B2

公开(公告)日：2003-11-11

申请号：US10135212

申请日：2002-04-30

申请人： Douglas M. Smith ,  Gregory P. Johnston ,  William C. Ackerman ,  Richard A. Stoltz ,  Alok Maskara ,  Teresa Ramos ,  Shin-Puu Jeng ,  Bruce E. Gnade

发明人： Douglas M. Smith ,  Gregory P. Johnston ,  William C. Ackerman ,  Richard A. Stoltz ,  Alok Maskara ,  Teresa Ramos ,  Shin-Puu Jeng ,  Bruce E. Gnade

IPC分类号： H01L2131

CPC分类号： H01L21/31695 ,  B01J13/0091 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02282 ,  H01L21/3105

摘要： This invention has enabled a new, simple thin film nanoporous dielectric fabrication method. In general, this invention uses glycerol, or another low volatility compound, as a solvent. This new method allows thin film aerogels/low density xerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying. This invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, aged, and dried without atmospheric controls. In another aspect, this invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, rapidly aged at an elevated temperature, and dried with only passive atmospheric controls, such as limiting the volume of the aging chamber.