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    POLARITON MODE OPTICAL SWITCH
    2.
    发明申请
    POLARITON MODE OPTICAL SWITCH 有权
    极光模式光开关

    公开(公告)号：US20100276661A1

    公开(公告)日：2010-11-04

    申请号：US12432967

    申请日：2009-04-30

    Applicant: Doyeol AHN

    Inventor： Doyeol AHN

    IPC: H01L31/0352 ,  H01L31/0232

    CPC classification number: G02F1/01716 ,  B82Y20/00 ,  G02F2202/32 ,  G02F2203/10 ,  Y10S977/755

    Abstract: Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first and a second optical-field confining structures located on the substrate, and a quantum structure disposed between the first and the second optical-field confining structures. The first optical-field confining structure may include a surface to receive photons. The second optical-field confining structure may be spaced apart from the first optical-field confining structure. The first and the second optical-field confining structures may be configured to substantially confine therebetween an optical field of the photons.

    Abstract translation: 提供了用于频率相关光切换的设备，方法和技术。 在一个实施例中，器件包括衬底，位于衬底上的第一和第二光场限制结构以及设置在第一和第二光场约束结构之间的量子结构。 第一光场约束结构可以包括接收光子的表面。 第二光场约束结构可以与第一光场约束结构间隔开。 第一和第二光场约束结构可以被配置为基本上限制光子的光场。

    PHOTODIODES WITH SURFACE PLASMON COUPLERS
    3.
    发明申请
    PHOTODIODES WITH SURFACE PLASMON COUPLERS 有权
    带表面等离子体耦合器的光刻胶

    公开(公告)号：US20100270638A1

    公开(公告)日：2010-10-28

    申请号：US12430447

    申请日：2009-04-27

    Applicant: Doyeol AHN

    Inventor： Doyeol AHN

    IPC: H01L31/0216 ,  H01L21/3205

    CPC classification number: H01L31/105 ,  B82Y20/00 ,  H01L31/02165 ,  H01L31/0224

    Abstract: A device that includes a signal generating unit having a surface that can receive photons, a first metal structure located on the surface of the signal generating unit, and a second metal structure located on the surface of the signal generating unit. The second metal structure being spaced apart from the first metal structure.

    Abstract translation: 一种装置，包括具有能够接收光子的表面的信号发生单元，位于信号产生单元的表面上的第一金属结构以及位于信号发生单元的表面上的第二金属结构。 第二金属结构与第一金属结构间隔开。

    PHOTODETECTORS
    4.
    发明申请
    PHOTODETECTORS 审中-公开
    光电子

    公开(公告)号：US20100314608A1

    公开(公告)日：2010-12-16

    申请号：US12198816

    申请日：2008-08-26

    Applicant: Doyeol AHN

    Inventor： Doyeol AHN

    IPC: H01L31/0352

    CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L31/105

    Abstract: Implementations of quantum well photodetectors are provided.

    Abstract translation: 提供了量子阱光电探测器的实现。

    HIGH-ELECTRON MOBILITY TRANSISTOR
    5.
    发明申请
    HIGH-ELECTRON MOBILITY TRANSISTOR 审中-公开
    高电子移动晶体管

    公开(公告)号：US20100270591A1

    公开(公告)日：2010-10-28

    申请号：US12430331

    申请日：2009-04-27

    Applicant: Doyeol AHN

    Inventor： Doyeol AHN

    IPC: H01L29/778 ,  H01L21/335

    CPC classification number: H01L29/7782 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/225

    Abstract: Disclosed are high electron mobility transistors (HEMTs). In some embodiments, a HEMT includes a channel layer composed of a first compound semiconductor material and one or more barrier layers disposed on either one side or both sides of the channel layer and composed of a second compound semiconductor material.

    Abstract translation: 公开了高电子迁移率晶体管（HEMT）。 在一些实施例中，HEMT包括由第一化合物半导体材料和设置在沟道层的一侧或两侧上并由第二化合物半导体材料构成的一个或多个势垒层的沟道层。

    QUANTUM KARNAUGH MAP
    7.
    发明申请
    QUANTUM KARNAUGH MAP 有权
    量子卡拉图地图

    公开(公告)号：US20110138344A1

    公开(公告)日：2011-06-09

    申请号：US12633575

    申请日：2009-12-08

    Applicant: Doyeol AHN

    Inventor： Doyeol AHN

    IPC: G06F17/50

    CPC classification number: G06F17/5022 ,  B82Y10/00 ,  G06N99/002

    Abstract: Techniques for determining and a computing device configured to determine a quantum Karnaugh map through decomposing a quantum circuit into a multiple number of sub-circuits are provided. Also, techniques for obtaining and a computing device configured to obtain a quantum circuit which includes the minimum number of gates among possible quantum circuits corresponding to a quantum Karnaugh map are also provided.

    Abstract translation: 提供了用于确定的技术和被配置为通过将量子电路分解成多个子电路来确定量子卡诺图的计算装置。 此外，还提供了用于获得和计算装置的技术，其被配置为获得包括对应于量子卡诺图的可能量子电路中的最小数量的栅极的量子电路。

    COMPOUND SEMICONDUCTORS
    8.
    发明申请
    COMPOUND SEMICONDUCTORS 有权
    化合物半导体

    公开(公告)号：US20110001122A1

    公开(公告)日：2011-01-06

    申请号：US12498265

    申请日：2009-07-06

    Applicant: Doyeol AHN

    Inventor： Doyeol AHN

    IPC: H01L33/00 ,  H01L29/22

    CPC classification number: H01L33/28 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/285

    Abstract: Compound semiconductors capable of emitting light in the green spectrum are provided. The compound semiconductors may display improved quantum efficiencies when applied to various optical devices. Also, light emitting diodes and light emitting diode modules comprising the compound semiconductors are provided.

    Abstract translation: 提供能够在绿色光谱中发光的化合物半导体。 当应用于各种光学器件时，化合物半导体可以显示出提高的量子效率。 此外，提供了包含化合物半导体的发光二极管和发光二极管模块。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20100276730A1

    公开(公告)日：2010-11-04

    申请号：US12431921

    申请日：2009-04-29

    Applicant: Doyeol AHN

    Inventor： Doyeol AHN

    IPC: H01L29/165

    CPC classification number: H01L29/205 ,  B82Y20/00 ,  H01L29/2003 ,  H01L29/225 ,  H01L33/28 ,  H01L33/32 ,  H01S5/3404 ,  H01S5/3407 ,  H01S5/34333 ,  H01S5/347

    Abstract: Semiconductor devices having at least one barrier layer are disclosed. In some embodiments, a semiconductor device includes an active layer and one or more barrier layers disposed on either one side or both sides of the active layer. The active layer may be composed of a first compound semiconductor material, and the one or more barrier layers may be composed of a second compound semiconductor material. In some embodiments, the composition of the one or more barrier layers may be adjusted to increase an optical dipole matrix element.

    Abstract translation: 公开了具有至少一个阻挡层的半导体器件。 在一些实施例中，半导体器件包括有源层和设置在有源层的一侧或两侧上的一个或多个势垒层。 有源层可以由第一化合物半导体材料构成，并且一个或多个阻挡层可以由第二化合物半导体材料构成。 在一些实施例中，可以调整一个或多个阻挡层的组成以增加光学偶极矩阵元件。

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