Semiconductor device with a controlled cavity and method of formation
    6.
    发明授权
    Semiconductor device with a controlled cavity and method of formation 有权
    具有受控腔体和形成方法的半导体器件

    公开(公告)号:US07985659B1

    公开(公告)日:2011-07-26

    申请号:US12750929

    申请日:2010-03-31

    IPC分类号: H01L21/30 H01L21/00 H01L27/14

    摘要: A method for forming a semiconductor device includes providing a first cap wafer having a first opening extending through the first cap wafer, and a second cap wafer bonded to the first cap wafer, wherein the second cap wafer has a second opening extending through the second cap wafer, and wherein the first opening is misaligned with respect to the second opening. After the providing the first cap wafer and second cap wafer, the second cap wafer is bonded to a device wafer, wherein a cavity is formed between the device wafer and the second cap wafer, and wherein the device wafer comprises at least one semiconductor device in the cavity. After the bonding the second cap wafer to the device wafer, a vacuum is applied, wherein during the applying the vacuum, a sealing layer is formed over the first cap wafer, wherein the sealing layer seals the first opening.

    摘要翻译: 一种用于形成半导体器件的方法包括提供具有延伸穿过第一盖晶片的第一开口的第一盖晶片和与第一盖晶片接合的第二盖晶片,其中第二盖晶片具有延伸穿过第二盖的第二开口 晶片,并且其中所述第一开口相对于所述第二开口不对准。 在提供第一盖晶片和第二盖晶片之后,第二盖晶片被接合到器件晶片,其中在器件晶片和第二帽晶片之间形成空腔,并且其中器件晶片包括至少一个半导体器件 空腔。 在将第二盖晶片接合到器件晶片之后,施加真空,其中在施加真空期间,在第一盖晶片之上形成密封层,其中密封层密封第一开口。

    Semiconductor device with a controlled cavity and method of formation
    9.
    发明授权
    Semiconductor device with a controlled cavity and method of formation 有权
    具有受控腔体和形成方法的半导体器件

    公开(公告)号:US08378433B2

    公开(公告)日:2013-02-19

    申请号:US13160137

    申请日:2011-06-14

    IPC分类号: H01L27/14 H01L23/02

    摘要: A semiconductor device includes a first cap wafer having a first opening extending through the first cap wafer, and a second cap wafer bonded to the first cap wafer, wherein the second cap wafer has a second opening extending through the second cap wafer, and wherein the first opening is misaligned with respect to the second opening. The second cap wafer is bonded to a device wafer, wherein a cavity is formed between the device wafer and the second cap wafer, and wherein the device wafer comprises at least one semiconductor device in the cavity. A vacuum sealing layer is formed over the first cap wafer, wherein the sealing layer vacuum seals the first opening.

    摘要翻译: 半导体器件包括具有延伸穿过第一盖晶片的第一开口的第一盖晶片和与第一盖晶片接合的第二盖晶片,其中第二盖晶片具有延伸穿过第二盖晶片的第二开口,并且其中 第一次开放对于第二次开放是不对的。 第二盖晶片被结合到器件晶片,其中在器件晶片和第二帽晶片之间形成空腔,并且其中器件晶片在腔中包括至少一个半导体器件。 真空密封层形成在第一盖晶片之上,其中密封层真空密封第一开口。