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    HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
    高电子移动晶体管及其制造方法

    公开(公告)号：US20150087142A1

    公开(公告)日：2015-03-26

    申请号：US14555182

    申请日：2014-11-26

    申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    发明人： Jong-Won LIM ,  Ho Kyun AHN ,  Young Rak PARK ,  Dong Min KANG ,  Woo Jin CHANG ,  Seong-il KIM ,  Sung Bum BAE ,  Sang-Heung LEE ,  Hyung Sup YOON ,  Chull Won JU ,  Jae Kyoung MUN ,  Eun Soo NAM

    IPC分类号： H01L29/66 ,  H01L21/311 ,  H01L21/28 ,  H01L29/423

    CPC分类号： H01L29/66431 ,  H01L21/28255 ,  H01L21/31116 ,  H01L21/31144 ,  H01L29/1608 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66068 ,  H01L29/7787

    摘要： Disclosed is a manufacturing method of a high electron mobility transistor. The method includes: forming a source electrode and a drain electrode on a substrate; forming a first insulating film having a first opening on an entire surface of the substrate, the first opening exposing a part of the substrate; forming a second insulating film having a second opening within the first opening, the second opening exposing a part of the substrate; forming a third insulating film having a third opening within the second opening, the third opening exposing a part of the substrate; etching a part of the first insulating film, the second insulating film and the third insulating film so as to expose the source electrode and the drain electrode; and forming a T-gate electrode on a support structure including the first insulating film, the second insulating film and the third insulating film.

    摘要翻译： 公开了一种高电子迁移率晶体管的制造方法。 该方法包括：在基板上形成源电极和漏电极; 在所述基板的整个表面上形成具有第一开口的第一绝缘膜，所述第一开口暴露所述基板的一部分; 在所述第一开口内形成具有第二开口的第二绝缘膜，所述第二开口暴露所述基板的一部分; 在所述第二开口内形成具有第三开口的第三绝缘膜，所述第三开口暴露所述基板的一部分; 蚀刻第一绝缘膜，第二绝缘膜和第三绝缘膜的一部分，以使源电极和漏电极露出; 以及在包括第一绝缘膜，第二绝缘膜和第三绝缘膜的支撑结构上形成T栅电极。