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    Particle-optical apparatus and method for operating the same
    3.
    发明授权
    Particle-optical apparatus and method for operating the same 失效
    粒子光学装置及其操作方法

    公开(公告)号：US06891168B2

    公开(公告)日：2005-05-10

    申请号：US10639741

    申请日：2003-08-13

    Applicant: Rainer Knippelmeyer

    Inventor： Rainer Knippelmeyer

    IPC: H01J37/12 ,  G21K1/08 ,  H01J37/14 ,  H01J37/141 ,  H01J37/147 ,  H01J37/28 ,  H01J37/305

    CPC classification number: H01J37/141 ,  G21K1/08 ,  H01J37/12 ,  H01J37/14 ,  H01J37/1475 ,  H01J37/1477 ,  H01J2237/121 ,  H01J2237/1504

    Abstract: An apparatus and a method to manipulate at least one beam of charged particles are provided. The apparatus comprises two rows of field source members 13 which are disposed periodically at a distance from each other such that there exist planes of symmetry S, S′ with respect to which the field source members 13 are symmetrically disposed. The field has a component which is displaceable in the x-direction. To provide such field, a pattern of source strengths according to the formula F1(x)=Fm(x)+Fc(x) is applied to the field source members, wherein Fm is a component which is substantially independent of the displacement x0 and Fc is a correction component which is dependent on x0.

    Abstract translation: 提供了一种操纵至少一个带电粒子束的装置和方法。 该装置包括两排场源元件13，它们周期性地彼此间隔设置，使得存在对称S，S'的平面，场源元件13对称地设置对准面。 该场具有可在x方向上移位的分量。 为了提供这样的场，根据公式F 1（x）= F m（x）+ F c（x） x）被施加到场源成员，其中F m是基本上独立于位移x 0和F C 1的分量 取决于x <0>的校正分量。

    Method for the electron-microscopic observation of a semiconductor arrangement and apparatus therefor
    8.
    发明授权
    Method for the electron-microscopic observation of a semiconductor arrangement and apparatus therefor 有权
    半导体装置的电子显微镜观察方法及其装置

    公开(公告)号：US06967328B2

    公开(公告)日：2005-11-22

    申请号：US10614825

    申请日：2003-07-09

    Applicant: Oliver Kienzle ,  Rainer Knippelmeyer ,  Ingo Müller

    Inventor： Oliver Kienzle ,  Rainer Knippelmeyer ,  Ingo Müller

    IPC: H01L21/66 ,  G01N23/00 ,  G01N23/225 ,  G01Q20/00 ,  G01Q30/02 ,  G01Q30/04 ,  G21K7/00 ,  H01J37/05 ,  H01J37/244 ,  H01J37/28 ,  H01J37/29

    CPC classification number: H01J37/28 ,  H01J2237/2817

    Abstract: A method for the electron-microscopic observation of a semiconductor arrangement is provided. It includes providing an electron microscopy optics for imaging secondary electrons emanating from the semiconductor arrangement within an extended object field on a position-sensitive detector, providing an illumination device for emitting a primary energy beam, directing the primary energy beam to at least the object field for extracting there secondary electrons from the semiconductor arrangement. The semiconductor arrangement comprises a region with an upper surface provided by a first material and a recess with a high aspect ratio which is surrounded by the upper surface and has a bottom provided by a second material.

    Abstract translation: 提供了一种用于电子显微镜观察半导体装置的方法。 它包括提供电子显微镜光学器件，用于对在位置敏感检测器上的扩展物体场内的半导体布置发射的二次电子进行成像，提供用于发射一次能量束的照明装置，将一次能量束引导至少一个物场 用于从半导体装置中提取二次电子。 半导体装置包括具有由第一材料提供的上表面的区域和具有高纵横比的凹槽，其被上表面包围并具有由第二材料提供的底部。

    Repairing defects
    9.
    发明授权
    Repairing defects 有权
    修复缺陷

    公开(公告)号：US08334701B2

    公开(公告)日：2012-12-18

    申请号：US12549759

    申请日：2009-08-28

    Applicant: Rainer Knippelmeyer ,  Christoph Riedesel ,  John Morgan ,  Lawrence Scipioni

    Inventor： Rainer Knippelmeyer ,  Christoph Riedesel ,  John Morgan ,  Lawrence Scipioni

    IPC: G01R31/02

    CPC classification number: H01L21/76892 ,  H01L22/20 ,  H05K3/0017 ,  H05K3/225 ,  H05K2203/09 ,  H05K2203/1344 ,  H05K2203/173

    Abstract: Methods and systems for defect repair are disclosed. The methods include: (a) identifying a defect causing an absence of an electrical connection between a first circuit element and a second circuit element, the first and second circuit elements being positioned in or on a substrate and the defect being positioned in the substrate; (b) removing a portion of the substrate to expose the defect, and depositing a conductive material to electrically connect the first and second circuit elements; and (c) verifying that the defect caused the absence of an electrical connection between the first and second circuit elements.

    Abstract translation: 公开了用于缺陷修复的方法和系统。 所述方法包括：（a）识别导致在第一电路元件和第二电路元件之间不存在电连接的缺陷，所述第一和第二电路元件位于基板中或基板上，并且所述缺陷位于所述基板中; （b）去除所述衬底的一部分以暴露所述缺陷，以及沉积导电材料以电连接所述第一和第二电路元件; 和（c）验证该缺陷导致在第一和第二电路元件之间不存在电连接。

    REPAIRING DEFECTS
    10.
    发明申请
    REPAIRING DEFECTS 有权
    修复缺陷

    公开(公告)号：US20100052697A1

    公开(公告)日：2010-03-04

    申请号：US12549759

    申请日：2009-08-28

    Applicant: Rainer Knippelmeyer ,  Christoph Riedesel ,  John Morgan ,  Lawrence Scipioni

    Inventor： Rainer Knippelmeyer ,  Christoph Riedesel ,  John Morgan ,  Lawrence Scipioni

    IPC: G01R31/02

    CPC classification number: H01L21/76892 ,  H01L22/20 ,  H05K3/0017 ,  H05K3/225 ,  H05K2203/09 ,  H05K2203/1344 ,  H05K2203/173

    Abstract: Methods and systems for defect repair are disclosed. The methods include: (a) identifying a defect causing an absence of an electrical connection between a first circuit element and a second circuit element, the first and second circuit elements being positioned in or on a substrate and the defect being positioned in the substrate; (b) removing a portion of the substrate to expose the defect, and depositing a conductive material to electrically connect the first and second circuit elements; and (c) verifying that the defect caused the absence of an electrical connection between the first and second circuit elements.

    Abstract translation: 公开了用于缺陷修复的方法和系统。 所述方法包括：（a）识别导致在第一电路元件和第二电路元件之间不存在电连接的缺陷，所述第一和第二电路元件位于基板中或基板上，并且所述缺陷位于所述基板中; （b）去除所述衬底的一部分以暴露所述缺陷，以及沉积导电材料以电连接所述第一和第二电路元件; 和（c）验证该缺陷导致在第一和第二电路元件之间不存在电连接。

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