利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

15 条记录 (耗时 0.025 秒)

    DESIGN STRUCTURE INCORPORATING VERTICAL PARALLEL PLATE CAPACITOR STRUCTURES
    6.
    发明申请
    DESIGN STRUCTURE INCORPORATING VERTICAL PARALLEL PLATE CAPACITOR STRUCTURES 审中-公开
    垂直平行平板电容结构的设计结构

    公开(公告)号：US20090102016A1

    公开(公告)日：2009-04-23

    申请号：US11876402

    申请日：2007-10-22

    申请人： Ephrem G. Gebreselasie ,  Zhong-Xiang He ,  Steven H. Voldman

    发明人： Ephrem G. Gebreselasie ,  Zhong-Xiang He ,  Steven H. Voldman

    IPC分类号： H01L29/00

    CPC分类号： H01L23/5223 ,  H01L23/53223 ,  H01L23/53238 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Design structure embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a vertical parallel plate capacitor structure with a first plurality of conductive plates and a second plurality of conductive plates having an overlying relationship with the first plurality of conductive plates. The first plurality of conductive plates are spaced apart by a first distance. The second plurality of conductive plates are spaced apart by a second distance different than the first distance

    摘要翻译： 用于设计，制造或测试设计的机器可读介质中体现的设计结构。 该设计结构包括具有第一多个导电板的垂直平行板电容器结构和与第一多个导电板具有重叠关系的第二多个导电板。 第一多个导电板间隔第一距离。 所述第二多个导电板间隔开与第一距离不同的第二距离

    Electrostatic discharge structures and methods of manufacture
    8.
    发明授权
    Electrostatic discharge structures and methods of manufacture 有权
    静电放电结构及制造方法

    公开(公告)号：US08054597B2

    公开(公告)日：2011-11-08

    申请号：US12489774

    申请日：2009-06-23

    申请人： Ephrem G. Gebreselasie ,  Steven H. Voldman

    发明人： Ephrem G. Gebreselasie ,  Steven H. Voldman

    IPC分类号： H02H3/22

    CPC分类号： H01L27/0251 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Electrostatic discharge (ESD) structures having a connection to a through wafer via structure and methods of manufacture are provided. The structure includes an electrostatic discharge (ESD) network electrically connected in series to a through wafer via. More specifically, the ESD circuit includes a bond pad and an ESD network located under the bond pad. The ESD circuit further includes a through wafer via structure electrically connected in series directly to the ESD network, and which is also electrically connected to VSS.

    摘要翻译： 提供了具有与通过晶片通孔结构和制造方法的连接的静电放电（ESD）结构。 该结构包括与通过晶片通孔串联电连接的静电放电（ESD）网络。 更具体地，ESD电路包括位于接合焊盘下方的接合焊盘和ESD网络。 ESD电路还包括直接与ESD网络串联电连接并且还电连接到VSS的直通晶片通孔结构。

    Vertical parallel plate capacitor structures
    9.
    发明授权
    Vertical parallel plate capacitor structures 有权
    垂直平行板电容器结构

    公开(公告)号：US07876547B2

    公开(公告)日：2011-01-25

    申请号：US11755502

    申请日：2007-05-30

    申请人： Ephrem G. Gebreselasie ,  Zhong-Xiang He ,  Steven H. Voldman

    发明人： Ephrem G. Gebreselasie ,  Zhong-Xiang He ,  Steven H. Voldman

    IPC分类号： H01G4/008 ,  H01G4/005 ,  H01G4/38

    CPC分类号： H01G4/005 ,  H01G4/008 ,  H01G4/30

    摘要： Vertical parallel plate (VPP) capacitor structures that utilize different spacings between conductive plates in different levels of the capacitor stack. The non-even spacings of the conductive plates in the capacitor stack decrease the susceptibility of the capacitor stack of the VPP capacitor to ESD-promoted failures. The non-even spacings may be material specific in that, for example, the spacings between adjacent conductive plates in different levels of the capacitor stack may be chosen based upon material failure mechanisms for plates containing different materials.

    摘要翻译： 垂直平行板（VPP）电容器结构，其在电容器堆叠的不同级别的导电板之间利用不同的间隔。 电容器堆叠中的导电板的非均匀间距降低了VPP电容器的电容器堆叠对ESD促进故障的敏感性。 非均匀间距可以是材料特定的，例如，可以基于包含不同材料的板的材料破坏机制来选择电容器堆叠的不同级别中的相邻导电板之间的间隔。