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    Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
    3.
    发明授权
    Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials 失效
    蚀刻高介电常数材料和清洁高介电常数材料沉积室的方法

    公开(公告)号：US07357138B2

    公开(公告)日：2008-04-15

    申请号：US10723714

    申请日：2003-11-26

    申请人： Bing Ji ,  Stephen Andrew Motika ,  Ronald Martin Pearlstein ,  Eugene Joseph Karwacki, Jr. ,  Dingjun Wu

    发明人： Bing Ji ,  Stephen Andrew Motika ,  Ronald Martin Pearlstein ,  Eugene Joseph Karwacki, Jr. ,  Dingjun Wu

    IPC分类号： B08B9/00 ,  B08B6/00

    CPC分类号： C23C16/4405 ,  B08B7/00 ,  B08B7/0035

    摘要： A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.

    摘要翻译： 本文公开了用于从用于蚀刻和/或清洁应用的基底中去除物质的方法。 在一个实施方案中，提供了一种通过使该物质与包含至少一种成员的物质与含卤素的化合物，硼的物质反应从物质中除去介电常数大于二氧化硅的物质的方法 含氢化合物，含氮化合物，螯合化合物，含碳化合物，氯硅烷，氢氯代硅烷或有机氯硅烷，以形成挥发性产物，并从基质中除去挥发性产物，从而除去 来自底物的物质。

    Method for cleaning deposition chambers for high dielectric constant materials
    4.
    发明授权
    Method for cleaning deposition chambers for high dielectric constant materials 失效
    清洁高介电常数材料沉积室的方法

    公开(公告)号：US07055263B2

    公开(公告)日：2006-06-06

    申请号：US10721719

    申请日：2003-11-25

    申请人： Dingjun Wu ,  Bing Ji ,  Stephen Andrew Motika ,  Eugene Joseph Karwacki, Jr.

    发明人： Dingjun Wu ,  Bing Ji ,  Stephen Andrew Motika ,  Eugene Joseph Karwacki, Jr.

    IPC分类号： F26B3/34

    CPC分类号： C23C16/4405

    摘要： A method for dry etching and chamber cleaning high dielectric constant materials is disclosed herein. In one aspect of the present invention, there is provided a process for cleaning a substance comprising a dielectric constant greater than the dielectric constant of silicon dioxide from at least a portion of a surface of a reactor comprising: introducing a first gas mixture comprising a boron-containing reactive agent into the reactor wherein the first gas mixture reacts with the substance contained therein to provide a volatile product and a boron-containing by-product; introducing a second gas mixture comprising a fluorine-containing reactive agent into the reactor wherein the second gas mixture reacts with the boron-containing by-product contained therein to form the volatile product; and removing the volatile product from the reactor.

    摘要翻译： 本文公开了一种用于干蚀刻和室清洁的高介电常数材料的方法。 在本发明的一个方面，提供了一种清洁物质的方法，该方法包括介电常数大于来自反应器表面的至少一部分的二氧化硅的介电常数，包括：引入包含硼的第一气体混合物 其中第一气体混合物与其中所含的物质反应以提供挥发性产物和含硼副产物; 将包含含氟反应剂的第二气体混合物引入反应器中，其中第二气体混合物与其中所含的含硼副产物反应形成挥发性产物; 并从反应器中除去挥发性产物。

    Removal of transition metal ternary and/or quaternary barrier materials from a substrate
    6.
    发明授权
    Removal of transition metal ternary and/or quaternary barrier materials from a substrate 失效
    从基底去除过渡金属三元和/或四元阻挡材料

    公开(公告)号：US07371688B2

    公开(公告)日：2008-05-13

    申请号：US10942301

    申请日：2004-09-15

    申请人： Bing Ji ,  Martin Jay Plishka ,  Dingjun Wu ,  Peter Richard Badowski ,  Eugene Joseph Karwacki, Jr.

    发明人： Bing Ji ,  Martin Jay Plishka ,  Dingjun Wu ,  Peter Richard Badowski ,  Eugene Joseph Karwacki, Jr.

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/32135 ,  C23C16/4405 ,  C23G5/00 ,  H01L21/32136 ,  Y10S438/905

    摘要： A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.

    摘要翻译： 本文公开了用于选择性地从衬底中去除蚀刻和/或清洁应用的物质的方法。 在一个实施方案中，提供了从基材中除去物质的方法，包括：提供具有沉积在其上的物质的基材，其中所述物质包含过渡金属三元化合物，过渡金属季铵化合物及其组合; 使物质与包含含氟气体和任选的添加气体的工艺气体反应以形成挥发性产物; 并从基材中除去挥发性产物，从而从基材中除去物质。

    Method for removing titanium dioxide deposits from a reactor
    7.
    发明授权
    Method for removing titanium dioxide deposits from a reactor 失效
    从反应器中除去二氧化钛沉积物的方法

    公开(公告)号：US07267842B2

    公开(公告)日：2007-09-11

    申请号：US10800880

    申请日：2004-03-15

    申请人： Dingjun Wu ,  Bing Ji ,  Philip Bruce Henderson ,  Eugene Joseph Karwacki, Jr.

    发明人： Dingjun Wu ,  Bing Ji ,  Philip Bruce Henderson ,  Eugene Joseph Karwacki, Jr.

    IPC分类号： C23C16/00 ,  H05H1/24

    CPC分类号： C23C16/405 ,  C23C14/083 ,  C23C14/564 ,  C23C16/4405

    摘要： A process for the selective removal of a TiO2-containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO2-containing substance from an article comprising: providing the article having the TiO2-containing substance deposited thereupon; reacting the substance with a reactive gas comprising at least one selected from a fluorine-containing cleaning agent, a chlorine-containing cleaning agent and mixtures thereof to form a volatile product; and removing the volatile product from the article to thereby remove the substance from the article.

    摘要翻译： 本文公开了用于从用于清洁应用的制品中选择性除去含TiO 2的物质的方法。 在一个实施方案中，提供了从制品中除去含TiO 2的物质的方法，包括：提供其上沉积有含TiO 2的物质的制品; 使物质与包含选自含氟清洗剂，含氯清洗剂及其混合物中的至少一种的反应性气体反应以形成挥发性产物; 并从制品中除去挥发性产物，从而从制品中除去物质。

    Detecting the endpoint of a cleaning process
    9.
    发明申请
    Detecting the endpoint of a cleaning process 审中-公开
    检测清洁过程的终点

    公开(公告)号：US20080047579A1

    公开(公告)日：2008-02-28

    申请号：US11510190

    申请日：2006-08-25

    申请人： Bing Ji ,  Stephen Andrew Motika ,  Dingjun Wu ,  Eugene Joseph Karwacki

    发明人： Bing Ji ,  Stephen Andrew Motika ,  Dingjun Wu ,  Eugene Joseph Karwacki

    IPC分类号： B08B6/00 ,  B08B7/04

    CPC分类号： B08B7/0035 ,  H01J37/32935 ,  H01J37/32963

    摘要： A method for determining the endpoint of a cleaning process in which a metallic residue is removed from an underlying surface which comprises a metal by contacting the residue with a cleaning agent which volatilizes the residue and which tends to attack the metal of the underlying surface and volatilizes it if the cleaning process is not terminated timely, and in which the metal comprising the underlying surface is more reactive with the cleaning agent than the metal of the metallic residue, the improvement which comprises terminating the cleaning process at a time when the ratio of the amount of volatilized metal to the amount of cleaning agent increases from a lower to a higher value.

    摘要翻译： 一种确定清洁方法的终点的方法，其中金属残留物从下面​​的表面除去，该金属残留物通过使残留物与残留物挥发并且易于侵蚀下面的表面的金属并使其挥发的清洁剂接触， 如果清洁过程没有及时终止，并且其中包含下面的表面的金属与金属残余物的金属比清洁剂更有反应性，其改进包括在第 挥发性金属的量与清洁剂的量从较低值增加到较高值。