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    MARANGONI STRESS-DRIVEN DROPLET MANIPULATION ON SMART POLYMERS FOR ULTRA-LOW VOLTAGE DIGITAL MICROFLUIDICS
    2.
    发明申请
    MARANGONI STRESS-DRIVEN DROPLET MANIPULATION ON SMART POLYMERS FOR ULTRA-LOW VOLTAGE DIGITAL MICROFLUIDICS 审中-公开
    用于超低电压数字微流控智能聚合物的MARANGONI应力驱动器驱动

    公开(公告)号：US20120248229A1

    公开(公告)日：2012-10-04

    申请号：US13434082

    申请日：2012-03-29

    申请人： Eui-Hyeok Yang ,  Yao-Tsan Tsai ,  Chang-Hwan Choi

    发明人： Eui-Hyeok Yang ,  Yao-Tsan Tsai ,  Chang-Hwan Choi

    IPC分类号： F23D11/32

    CPC分类号： B01F13/0071 ,  B01F13/0076

    摘要： An ultra-low voltage microfluidic device for manipulating droplets of liquid by inducing Marangoni stress therein includes a plurality of smart-polymer electrodes having films of smart polymer exposed at their surfaces. The surface of the smart polymer becomes hydrophobic or hydrophilic in response to different electromagnetic potentials. The smart polymer is reversibly oxidized by applying an electrical potential such that the smart polymer acquires a positive electrical charge. The oxidized smart polymer is reduced by applying an electrical potential such that it loses its positive electrical charge. The smart polymer is doped with a chemical compound having a negatively-charged end and a long-chain hydrophobic tail. The smart polymer is a polypyrrole and the dopant is a dodecylbenzene sulfonate. The microfluidic device includes a plurality of individually-addressable control electrodes, each of which is electrically-connected with smart-polymer electrodes. Droplets are transported, cut, or mixed by selectively applying electrical potential to individual electrodes.

    摘要翻译： 用于通过在其中诱导Marangoni应力来操纵液滴的超低电压微流体装置包括具有在其表面暴露的智能聚合物膜的多个智能聚合物电极。 智能聚合物的表面响应于不同的电磁势而变得疏水或亲水。 智能聚合物通过施加电势而被可逆地氧化，使得智能聚合物获得正电荷。 氧化的智能聚合物通过施加电位而减少，使得其失去正电荷。 该智能聚合物掺杂有具有带负电端和长链疏水尾的化合物。 智能聚合物是聚吡咯，掺杂剂是十二烷基苯磺酸盐。 微流体装置包括多个可单独寻址的控制电极，每个控制电极与智能聚合物电极电连接。 通过选择性地将电位施加到单个电极来将液滴运输，切割或混合。

    ACTIVE BANDGAP TUNING OF GRAPHENE FOR TUNABLE PHOTODETECTION APPLICATIONS
    3.
    发明申请
    ACTIVE BANDGAP TUNING OF GRAPHENE FOR TUNABLE PHOTODETECTION APPLICATIONS 有权
    用于可控光刻保护应用的石墨的主动带状调谐

    公开(公告)号：US20120153119A1

    公开(公告)日：2012-06-21

    申请号：US13324622

    申请日：2011-12-13

    申请人： Vikram Arvind Patil ,  Eui-Hyeok Yang ,  Stefan Strauf

    发明人： Vikram Arvind Patil ,  Eui-Hyeok Yang ,  Stefan Strauf

    IPC分类号： H01L31/028 ,  B82Y99/00

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  H01L31/028 ,  H01L31/09 ,  Y02E10/547

    摘要： In a method for adjusting the sensitivity of a photodetector, the bandgap of the photodetection material is adjusted by inducing strain in the photodetection material. Such adjustments can be made in situ and continuously, in a reproducible and repeatable manner. In embodiments of the method, the photodetection material is graphene, carbon nanotubes or graphene nanoribbon. The use of graphene permits a dynamically-adjustable sensitivity over a dynamic range of radiation having wavelengths of 1.38 microns or less, up to at least 60 microns. In an adjustable photodetector, a graphene layer is suspended over a silicon substrate by a layer of an insulating material. Adjusting the voltage across the graphene layer and the silicon substrate induces strain in the graphene layer by electrostatic attraction.

    摘要翻译： 在用于调整光电检测器的灵敏度的方法中，通过在光电探测材料中引起应变来调节光电探测材料的带隙。 可以以可再现和可重复的方式原位和连续地进行这种调整。 在该方法的实施例中，光电探测材料是石墨烯，碳纳米管或石墨烯纳米棒。 石墨烯的使用允许在波长为1.38微米或更小，至多至少60微米的辐射的动态范围内具有动态可调的灵敏度。 在可调光检测器中，石墨烯层通过绝缘材料层悬挂在硅衬底上。 调整石墨烯层和硅衬底之间的电压通过静电吸引引起石墨烯层中的应变。

    PHASE COHERENT SOLID STATE ELECTRON GYROSCOPE ARRAY
    4.
    发明申请
    PHASE COHERENT SOLID STATE ELECTRON GYROSCOPE ARRAY 审中-公开
    相位固态电子陀螺仪阵列

    公开(公告)号：US20110140088A1

    公开(公告)日：2011-06-16

    申请号：US12908419

    申请日：2010-10-20

    申请人： Christopher Search ,  Eui-Hyeok Yang ,  Stefan Strauf

    发明人： Christopher Search ,  Eui-Hyeok Yang ,  Stefan Strauf

    IPC分类号： H01L29/12 ,  H01L21/02

    CPC分类号： G01C19/58 ,  G01C19/64

    摘要： An apparatus and method is disclosed which may comprise an electron gyroscope, which may comprise an interferometer array which may comprise interferometer rings formed from a sheet of graphene. Each interferometer ring in the interferometer array may have a half-circumference shorter in length than the ballistic length for an electron in graphene.

    摘要翻译： 公开了一种可以包括电子陀螺仪的装置和方法，该电子陀螺仪可以包括可包括由石墨烯片形成的干涉仪环的干涉仪阵列。 干涉仪阵列中的每个干涉仪环的长度可以比​​石墨烯中的电子的弹道长度短。

    Active bandgap tuning of graphene for tunable photodetection applications
    6.
    发明授权
    Active bandgap tuning of graphene for tunable photodetection applications 有权
    用于可调谐光电检测应用的石墨烯的主动带隙调谐

    公开(公告)号：US08878120B2

    公开(公告)日：2014-11-04

    申请号：US13324622

    申请日：2011-12-13

    申请人： Vikram Arvind Patil ,  Eui-Hyeok Yang ,  Stefan Strauf

    发明人： Vikram Arvind Patil ,  Eui-Hyeok Yang ,  Stefan Strauf

    IPC分类号： H01L31/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L31/028 ,  H01L31/09

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  H01L31/028 ,  H01L31/09 ,  Y02E10/547

    摘要： In a method for adjusting the sensitivity of a photodetector, the bandgap of the photodetection material is adjusted by inducing strain in the photodetection material. Such adjustments can be made in situ and continuously, in a reproducible and repeatable manner. In embodiments of the method, the photodetection material is graphene, carbon nanotubes or graphene nanoribbon. The use of graphene permits a dynamically-adjustable sensitivity over a dynamic range of radiation having wavelengths of 1.38 microns or less, up to at least 60 microns. In an adjustable photodetector, a graphene layer is suspended over a silicon substrate by a layer of an insulating material. Adjusting the voltage across the graphene layer and the silicon substrate induces strain in the graphene layer by electrostatic attraction.

    摘要翻译： 在用于调整光电检测器的灵敏度的方法中，通过在光电探测材料中引起应变来调节光电探测材料的带隙。 可以以可再现和可重复的方式原位和连续地进行这种调整。 在该方法的实施例中，光电探测材料是石墨烯，碳纳米管或石墨烯纳米棒。 石墨烯的使用允许在波长为1.38微米或更小，至多至少60微米的辐射的动态范围内具有动态可调的灵敏度。 在可调光检测器中，石墨烯层通过绝缘材料层悬挂在硅衬底上。 调整石墨烯层和硅衬底之间的电压通过静电吸引引起石墨烯层中的应变。

    Wafer-level transfer of membranes with gas-phase etching and wet etching methods
    7.
    发明授权
    Wafer-level transfer of membranes with gas-phase etching and wet etching methods 有权
    用气相蚀刻和湿式蚀刻方法进行膜片转移

    公开(公告)号：US07268081B2

    公开(公告)日：2007-09-11

    申请号：US10678359

    申请日：2003-10-02

    申请人： Eui-Hyeok Yang

    发明人： Eui-Hyeok Yang

    IPC分类号： H01L21/302

    CPC分类号： B81C3/001 ,  B81B2203/0127 ,  B81B2203/0361 ,  B81C1/00357 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2203/038 ,  H01L21/2007 ,  H01L21/76251 ,  Y10S438/928 ,  Y10S438/968

    摘要： Techniques for transferring a membrane from one wafer to another wafer to form integrated semiconductor devices. In one implementation, a carrier wafer is fabricated to include a membrane on one side of the carrier wafer. The membrane on the carrier wafer is then bond to a surface of a different, device wafer by a plurality of joints. Next, the carrier wafer is etched away by a dry etching chemical to expose the membrane and to leave said membrane on the device wafer. Transfer of membranes with a wet etching process is also described.

    摘要翻译： 将膜从一个晶片转移到另一个晶片以形成集成的半导体器件的技术。 在一个实施方式中，制造载体晶片以在载体晶片的一侧包括膜。 然后通过多个接头将载体晶片上的膜结合到不同的器件晶片的表面。 接下来，通过干蚀刻化学品蚀刻载体晶片以暴露膜并将所述膜留在器件晶片上。 还描述了用湿蚀刻工艺转移膜。

    HIGH-THROUGHPUT LOCAL OXIDATION NANOLITHOGRAPHIC PROCESS
    9.
    发明申请
    HIGH-THROUGHPUT LOCAL OXIDATION NANOLITHOGRAPHIC PROCESS 审中-公开
    高通量局部氧化纳米方法

    公开(公告)号：US20100243472A1

    公开(公告)日：2010-09-30

    申请号：US12732518

    申请日：2010-03-26

    申请人： Eui-Hyeok Yang ,  Kitu Kumar

    发明人： Eui-Hyeok Yang ,  Kitu Kumar

    IPC分类号： C25F3/02

    CPC分类号： H01L29/7613 ,  B82Y10/00 ,  G01Q80/00 ,  H01L21/3065 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606

    摘要： In a lithographic process suitable for use in the manufacture of electronic components, oxidative reactions are employed to reproducibly fabricate patterns having micro- or nano-scale dimensions. An electrically-conductive template is fabricated to have a nanometer-scale sharp edge and describe a pattern having a micron-scale length. The oxidative reaction is mediated by a water meniscus connecting the sharp edge of the template and an oxidizable substrate. One suitable substrate is graphene. The template can be controllably positioned using a light lever method.

    摘要翻译： 在适用于制造电子部件的光刻工艺中，使用氧化反应可重复地制造具有微尺寸或纳米级尺寸的图案。 制造导电模板以具有纳米级的锋利边缘并描述具有微米级长度的图案。 氧化反应由连接模板的锋利边缘和可氧化底物的水弯月面介导。 一个合适的基底是石墨烯。 模板可以使用轻型杠杆方式可控地定位。