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公开(公告)号：US08889025B2
公开(公告)日：2014-11-18
申请号：US14146142
申请日：2014-01-02
发明人： Tomonori Takahashi , Tadashi Inaba , Atsushi Mizutani , Bing Du , William A. Wojtczak , Kazutaka Takahashi , Tetsuya Kamimura
IPC分类号： C03C15/00 , H01L21/3213 , C09K13/06 , C23F1/16 , C23F1/30 , H01L21/285 , H01L21/768
CPC分类号： H01L21/32134 , C09K13/06 , C23F1/16 , C23F1/28 , C23F1/30 , C23F1/44 , H01L21/28518 , H01L21/76843
摘要： This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water.
摘要翻译： 本公开涉及一种用于制造半导体器件的方法。 该方法包括用蚀刻组合物蚀刻半导体衬底上的金属膜; 并用冲洗溶剂冲洗蚀刻的金属膜。 蚀刻组合物包含至少一种酸; 至少一种含卤化物阴离子的化合物，卤化物阴离子是氯化物或溴化物; 至少一种含有硝酸根或亚硝酰离子的化合物; 和水。
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公开(公告)号：US08709277B2
公开(公告)日：2014-04-29
申请号：US13827861
申请日：2013-03-14
IPC分类号： C09K13/00
CPC分类号： C23F1/28 , C23F1/20 , C23F1/26 , C23F1/30 , H01L21/30604 , H01L21/32134 , H01L21/823871
摘要： This disclosure relates to an etching composition containing about 60% to about 95% of at least one sulfonic acid; about 0.005% to about 0.04% of chloride anion; about 0.03% to about 0.27% of bromide anion; about 0.1% to about 20% of nitrate or nitrosyl ion; and about 3% to about 37% of water.
摘要翻译： 本公开涉及含有约60％至约95％的至少一种磺酸的蚀刻组合物; 约0.005％至约0.04％的氯化物阴离子; 约0.03％至约0.27％的溴离子; 约0.1％至约20％的硝酸盐或亚硝酰离子; 和约3％至约37％的水。
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公开(公告)号：US20140120734A1
公开(公告)日：2014-05-01
申请号：US14146142
申请日：2014-01-02
发明人： Tomonori Takahashi , Tadashi Inaba , Atsushi Mizutani , Bing Du , William A. Wojtczak , Kazutaka Takahashi , Tetsuya Kamimura
IPC分类号： H01L21/3213 , C23F1/30
CPC分类号： H01L21/32134 , C09K13/06 , C23F1/16 , C23F1/28 , C23F1/30 , C23F1/44 , H01L21/28518 , H01L21/76843
摘要： This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water.
摘要翻译： 本公开涉及一种用于制造半导体器件的方法。 该方法包括用蚀刻组合物蚀刻半导体衬底上的金属膜; 并用冲洗溶剂冲洗蚀刻的金属膜。 蚀刻组合物包含至少一种酸; 至少一种含卤化物阴离子的化合物，卤化物阴离子是氯化物或溴化物; 至少一种含有硝酸根或亚硝酰离子的化合物; 和水。
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公开(公告)号：US20140073140A1
公开(公告)日：2014-03-13
申请号：US13827861
申请日：2013-03-14
IPC分类号： C23F1/28 , C23F1/26 , H01L21/306 , C23F1/20
CPC分类号： C23F1/28 , C23F1/20 , C23F1/26 , C23F1/30 , H01L21/30604 , H01L21/32134 , H01L21/823871
摘要： This disclosure relates to an etching composition containing about 60% to about 95% of at least one sulfonic acid; about 0.005% to about 0.04% of chloride anion; about 0.03% to about 0.27% of bromide anion; about 0.1% to about 20% of nitrate or nitrosyl ion; and about 3% to about 37% of water.
摘要翻译： 本公开涉及含有约60％至约95％的至少一种磺酸的蚀刻组合物; 约0.005％至约0.04％的氯化物阴离子; 约0.03％至约0.27％的溴离子; 约0.1％至约20％的硝酸盐或亚硝酰离子; 和约3％至约37％的水。
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公开(公告)号：US11359169B2
公开(公告)日：2022-06-14
申请号：US17582077
申请日：2022-01-24
发明人： Tomonori Takahashi , Bing Du , William A. Wojtczak , Thomas Dory , Emil A. Kneer
IPC分类号： C11D7/50 , C11D11/00 , C11D7/32 , C11D3/00 , H01L21/02 , H01L21/311 , H01L21/027
摘要： This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
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公开(公告)号：US10415005B2
公开(公告)日：2019-09-17
申请号：US16400061
申请日：2019-05-01
发明人： Tomonori Takahashi , Bing Du , William A. Wojtczak , Thomas Dory , Emil A. Kneer
IPC分类号： C11D7/32 , C11D11/00 , H01L21/02 , C11D7/50 , H01L21/027 , H01L21/311 , C11D3/00
摘要： This disclosure relates to a cleaning composition that contains 1) hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition; 2) a pH adjusting agent, the pH adjusting agent being a base free of a metal ion and in an amount of at most about 3% by weight of the composition; 3) an alkylene glycol; and 4) water; in which the pH of the composition is from about 7 to about 11. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
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公开(公告)号：US20190241845A1
公开(公告)日：2019-08-08
申请号：US16361637
申请日：2019-03-22
发明人： Tomonori Takahashi , Bing Du , William A. Wojtczak , Thomas Dory , Emil A. Kneer
IPC分类号： C11D11/00 , H01L21/027 , H01L21/02 , H01L21/311 , C11D7/32 , C11D3/00 , C11D7/50
CPC分类号： C11D11/0047 , C11D3/0073 , C11D7/3218 , C11D7/3245 , C11D7/3281 , C11D7/5022 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02071 , H01L21/0273 , H01L21/31133
摘要： This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
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公开(公告)号：US20230100080A1
公开(公告)日：2023-03-30
申请号：US17979024
申请日：2022-11-02
发明人： Tomonori Takahashi , Bing Du , William A. Wojtczak , Thomas Dory , Emil A. Kneer
IPC分类号： C11D11/00 , C11D7/32 , C11D7/50 , C11D3/00 , H01L21/02 , H01L21/311 , H01L21/027
摘要： This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
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公开(公告)号：US10533146B2
公开(公告)日：2020-01-14
申请号：US15725415
申请日：2017-10-05
发明人： Keeyoung Park , Emil A. Kneer , Thomas Dory , Tomonori Takahashi
IPC分类号： C11D7/50 , C11D7/20 , C11D3/00 , H01L21/02 , C11D7/06 , C11D7/10 , C11D7/32 , C11D7/34 , C11D11/00 , C11D7/26
摘要： This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one metal-containing additive; and 4) water.
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公开(公告)号：US20190256807A1
公开(公告)日：2019-08-22
申请号：US16400061
申请日：2019-05-01
发明人： Tomonori Takahashi , Bing Du , William A. Wojtczak , Thomas Dory , Emil A. Kneer
IPC分类号： C11D11/00 , H01L21/02 , C11D7/32 , C11D7/50 , C11D3/00 , H01L21/027 , H01L21/311
CPC分类号： C11D11/0047 , C11D3/0073 , C11D7/3218 , C11D7/3245 , C11D7/3281 , C11D7/5022 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02071 , H01L21/0273 , H01L21/31133
摘要： This disclosure relates to a cleaning composition that contains 1) hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition; 2) a pH adjusting agent, the pH adjusting agent being a base free of a metal ion and in an amount of at most about 3% by weight of the composition; 3) an alkylene glycol; and 4) water; in which the pH of the composition is from about 7 to about 11. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.
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