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公开(公告)号:US08709277B2
公开(公告)日:2014-04-29
申请号:US13827861
申请日:2013-03-14
IPC分类号: C09K13/00
CPC分类号: C23F1/28 , C23F1/20 , C23F1/26 , C23F1/30 , H01L21/30604 , H01L21/32134 , H01L21/823871
摘要: This disclosure relates to an etching composition containing about 60% to about 95% of at least one sulfonic acid; about 0.005% to about 0.04% of chloride anion; about 0.03% to about 0.27% of bromide anion; about 0.1% to about 20% of nitrate or nitrosyl ion; and about 3% to about 37% of water.
摘要翻译: 本公开涉及含有约60%至约95%的至少一种磺酸的蚀刻组合物; 约0.005%至约0.04%的氯化物阴离子; 约0.03%至约0.27%的溴离子; 约0.1%至约20%的硝酸盐或亚硝酰离子; 和约3%至约37%的水。
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公开(公告)号:US20140073140A1
公开(公告)日:2014-03-13
申请号:US13827861
申请日:2013-03-14
IPC分类号: C23F1/28 , C23F1/26 , H01L21/306 , C23F1/20
CPC分类号: C23F1/28 , C23F1/20 , C23F1/26 , C23F1/30 , H01L21/30604 , H01L21/32134 , H01L21/823871
摘要: This disclosure relates to an etching composition containing about 60% to about 95% of at least one sulfonic acid; about 0.005% to about 0.04% of chloride anion; about 0.03% to about 0.27% of bromide anion; about 0.1% to about 20% of nitrate or nitrosyl ion; and about 3% to about 37% of water.
摘要翻译: 本公开涉及含有约60%至约95%的至少一种磺酸的蚀刻组合物; 约0.005%至约0.04%的氯化物阴离子; 约0.03%至约0.27%的溴离子; 约0.1%至约20%的硝酸盐或亚硝酰离子; 和约3%至约37%的水。
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公开(公告)号:US20140120734A1
公开(公告)日:2014-05-01
申请号:US14146142
申请日:2014-01-02
发明人: Tomonori Takahashi , Tadashi Inaba , Atsushi Mizutani , Bing Du , William A. Wojtczak , Kazutaka Takahashi , Tetsuya Kamimura
IPC分类号: H01L21/3213 , C23F1/30
CPC分类号: H01L21/32134 , C09K13/06 , C23F1/16 , C23F1/28 , C23F1/30 , C23F1/44 , H01L21/28518 , H01L21/76843
摘要: This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water.
摘要翻译: 本公开涉及一种用于制造半导体器件的方法。 该方法包括用蚀刻组合物蚀刻半导体衬底上的金属膜; 并用冲洗溶剂冲洗蚀刻的金属膜。 蚀刻组合物包含至少一种酸; 至少一种含卤化物阴离子的化合物,卤化物阴离子是氯化物或溴化物; 至少一种含有硝酸根或亚硝酰离子的化合物; 和水。
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公开(公告)号:US08889025B2
公开(公告)日:2014-11-18
申请号:US14146142
申请日:2014-01-02
发明人: Tomonori Takahashi , Tadashi Inaba , Atsushi Mizutani , Bing Du , William A. Wojtczak , Kazutaka Takahashi , Tetsuya Kamimura
IPC分类号: C03C15/00 , H01L21/3213 , C09K13/06 , C23F1/16 , C23F1/30 , H01L21/285 , H01L21/768
CPC分类号: H01L21/32134 , C09K13/06 , C23F1/16 , C23F1/28 , C23F1/30 , C23F1/44 , H01L21/28518 , H01L21/76843
摘要: This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water.
摘要翻译: 本公开涉及一种用于制造半导体器件的方法。 该方法包括用蚀刻组合物蚀刻半导体衬底上的金属膜; 并用冲洗溶剂冲洗蚀刻的金属膜。 蚀刻组合物包含至少一种酸; 至少一种含卤化物阴离子的化合物,卤化物阴离子是氯化物或溴化物; 至少一种含有硝酸根或亚硝酰离子的化合物; 和水。
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公开(公告)号:US11447642B2
公开(公告)日:2022-09-20
申请号:US17143229
申请日:2021-01-07
IPC分类号: H01L23/29 , C09D5/00 , C09D4/00 , C09D183/04 , C09D7/63 , B08B3/08 , H01L21/02 , C09D7/20 , C08K5/095 , C08K5/09 , H01L21/3105 , C09D7/40 , H01L21/306
摘要: This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.
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公开(公告)号:US20210057210A1
公开(公告)日:2021-02-25
申请号:US16983119
申请日:2020-08-03
摘要: This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate.
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公开(公告)号:US10593538B2
公开(公告)日:2020-03-17
申请号:US15928152
申请日:2018-03-22
IPC分类号: H01L21/02 , C09D5/00 , C09D7/20 , B08B3/08 , C11D11/00 , H01L21/321 , H01L21/3105 , H01L21/306 , C09D7/63
摘要: The disclosure provides methods and compositions therefor for treating a surface wherein a surface treatment layer is formed on the surface, thereby minimizing or preventing pattern collapse as the surface is subjected to typical cleaning steps in the semiconductor manufacturing process.
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公开(公告)号:US20200035494A1
公开(公告)日:2020-01-30
申请号:US16522187
申请日:2019-07-25
摘要: This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.
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公开(公告)号:US20230048767A1
公开(公告)日:2023-02-16
申请号:US17968971
申请日:2022-10-19
摘要: This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate.
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公开(公告)号:US11208616B2
公开(公告)日:2021-12-28
申请号:US16850060
申请日:2020-04-16
摘要: This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water, in which the composition is free of a compound comprising at least three hydroxyl groups. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.
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