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    POLISHING COMPOSITION
    1.
    发明申请
    POLISHING COMPOSITION 有权
    抛光组合物

    公开(公告)号：US20140322913A1

    公开(公告)日：2014-10-30

    申请号：US14359269

    申请日：2012-11-21

    Applicant: FUJIMI INCORPORATED

    Inventor： Shuugo Yokota ,  Yasuyuki Yamato ,  Satoru Yarita ,  Tomohiko Akatsuka ,  Shuichi Tamada

    IPC: C09G1/02 ,  H01L29/16 ,  H01L29/20 ,  B24B1/00 ,  H01L21/306

    CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/30625 ,  H01L29/16 ,  H01L29/20

    Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less. The polishing composition preferably further contains a hydrolysis-suppressing compound that bonds to a surface OH group of the portion containing a silicon material of the object to function to suppress hydrolysis of the portion containing a silicon material. Alternatively, a polishing composition of the present invention contains abrasive grains, an oxidizing agent, and a hydrolysis-suppressing compound. The polishing composition preferably has a neutral pH.

    Abstract translation: 本发明的抛光组合物用于抛光包含含有高迁移率材料的部分和含有硅材料的部分的物体。 抛光组合物包含平均一次粒径为40nm以下的氧化剂和磨粒。 抛光组合物优选还含有水解抑制化合物，其结合到含有该物质的硅材料的部分的表面OH基上，以抑制含硅材料部分的水解。 或者，本发明的研磨用组合物含有磨粒，氧化剂和水解抑制性化合物。 抛光组合物优选具有中性pH。

    Polishing composition
    2.
    发明授权
    Polishing composition 有权
    抛光组成

    公开(公告)号：US09238755B2

    公开(公告)日：2016-01-19

    申请号：US14359269

    申请日：2012-11-21

    Applicant: FUJIMI INCORPORATED

    Inventor： Shuugo Yokota ,  Yasuyuki Yamato ,  Satoru Yarita ,  Tomohiko Akatsuka ,  Shuichi Tamada

    IPC: C09G1/02 ,  H01L29/16 ,  H01L29/20 ,  B24B1/00 ,  H01L21/306 ,  B24B37/04 ,  C09K3/14

    CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/30625 ,  H01L29/16 ,  H01L29/20

    Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less. The polishing composition preferably further contains a hydrolysis-suppressing compound that bonds to a surface OH group of the portion containing a silicon material of the object to function to suppress hydrolysis of the portion containing a silicon material. Alternatively, a polishing composition of the present invention contains abrasive grains, an oxidizing agent, and a hydrolysis-suppressing compound. The polishing composition preferably has a neutral pH.

    Abstract translation: 本发明的抛光组合物用于抛光包含含有高迁移率材料的部分和含有硅材料的部分的物体。 抛光组合物包含平均一次粒径为40nm以下的氧化剂和磨粒。 抛光组合物优选还含有水解抑制化合物，其结合到含有该物质的硅材料的部分的表面OH基上，以抑制含硅材料部分的水解。 或者，本发明的研磨用组合物含有磨粒，氧化剂和水解抑制性化合物。 抛光组合物优选具有中性pH。

    POLISHING COMPOSITION
    3.
    发明申请
    POLISHING COMPOSITION 有权
    抛光组合物

    公开(公告)号：US20150069016A1

    公开(公告)日：2015-03-12

    申请号：US14385298

    申请日：2013-03-11

    Applicant: FUJIMI INCORPORATED

    Inventor： Shuichi Tamada ,  Satoru Yarita

    IPC: C09G1/02 ,  C23F1/40 ,  C23F1/30

    CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/30 ,  C23F1/40 ,  C23F3/02 ,  H01L21/02024 ,  H01L21/30625 ,  H01L21/3212

    Abstract: There is provided a polishing composition capable of suppressing formation of a stepped portion caused by etching of a surface of a polishing object including a portion containing a group IV material when the polishing object is polished. The present invention relates to a polishing composition for polishing of a polishing object including a portion that contains a group IV material, and the polishing composition contains an oxidizing agent and an anticorrosive agent. Preferably, the anticorrosive agent includes at least one selected from the group consisting of compounds in which two or more carbonyl groups contained in a molecule are bonded through a carbon atom in the molecule. To be more specific, preferably, the anticorrosive agent includes at least one selected from the group consisting of a 1,3-diketone compound, a 1,4-diketone compound, and a triketone compound.

    Abstract translation: 提供了一种研磨组合物，其能够在研磨对象被研磨时，抑制由包含含有IV族材料的部分的研磨对象物的表面的蚀刻而产生的阶梯部的形成。 本发明涉及一种用于抛光抛光对象物的抛光组合物，该抛光组合物包括含有IV族材料的部分，并且抛光组合物含有氧化剂和防腐蚀剂。 防腐剂优选包括选自分子中包含的两个或更多个羰基通过分子中的碳原子结合的化合物中的至少一种。 更具体地说，优选防锈剂包括选自1,3-二酮化合物，1,4-二酮化合物和三酮化合物中的至少一种。

    POLISHING COMPOSITION
    4.
    发明申请
    POLISHING COMPOSITION 审中-公开
    抛光组合物

    公开(公告)号：US20150060400A1

    公开(公告)日：2015-03-05

    申请号：US14394953

    申请日：2013-04-09

    Applicant: FUJIMI INCORPORATED

    Inventor： Shuichi Tamada

    IPC: C09G1/02 ,  B24B1/00

    CPC classification number: C09G1/02 ,  B24B1/00 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/30625

    Abstract: The present invention provides a polishing composition that can suppress generation of bumps due to etching on a surface of an object to be polished having a germanium material-containing part during the polishing of the object.The polishing composition of the present invention contains abrasive grains, an oxidant and a water-soluble polymer. The water-soluble polymer may be a water-soluble polymer such that 5,000 or more molecules are adsorbed per 1 μm2 of the surface area of the abrasive grains. Alternatively, the water-soluble polymer may be a compound that reduces the water contact angle of the germanium material-containing part of the object to be polished after the object has been polished by using the polishing composition.

    Abstract translation: 本发明提供了一种抛光组合物，其可以在物体的研磨过程中抑制由于在具有含锗材料的部件的被抛光物体的表面上的蚀刻而产生的凸起。 本发明的抛光组合物含有磨粒，氧化剂和水溶性聚合物。 水溶性聚合物可以是水溶性聚合物，使得每1μm2磨粒表面积吸附5,000个或更多个分子。 或者，水溶性聚合物可以是通过使用抛光组合物在物体被研磨后减少待研磨物体的含锗材料的部分的水接触角的化合物。

    Polishing composition
    7.
    发明授权
    Polishing composition 有权
    抛光组成

    公开(公告)号：US09376594B2

    公开(公告)日：2016-06-28

    申请号：US14385298

    申请日：2013-03-11

    Applicant: FUJIMI INCORPORATED

    Inventor： Shuichi Tamada ,  Satoru Yarita

    IPC: H01L21/302 ,  C09G1/02 ,  H01L21/321 ,  H01L21/306 ,  H01L21/02 ,  C09K3/14 ,  C23F1/30 ,  C23F1/40 ,  C23F3/02

    CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/30 ,  C23F1/40 ,  C23F3/02 ,  H01L21/02024 ,  H01L21/30625 ,  H01L21/3212

    Abstract: There is provided a polishing composition capable of suppressing formation of a stepped portion caused by etching of a surface of a polishing object including a portion containing a group IV material when the polishing object is polished. The present invention relates to a polishing composition for polishing of a polishing object including a portion that contains a group IV material, and the polishing composition contains an oxidizing agent and an anticorrosive agent. Preferably, the anticorrosive agent includes at least one selected from the group consisting of compounds in which two or more carbonyl groups contained in a molecule are bonded through a carbon atom in the molecule. To be more specific, preferably, the anticorrosive agent includes at least one selected from the group consisting of a 1,3-diketone compound, a 1,4-diketone compound, and a triketone compound.

    Abstract translation: 提供了一种研磨组合物，其能够在研磨对象被研磨时，抑制由包含含有IV族材料的部分的研磨对象物的表面的蚀刻而产生的阶梯部的形成。 本发明涉及一种用于抛光抛光对象物的抛光组合物，该抛光组合物包括含有IV族材料的部分，并且抛光组合物含有氧化剂和防腐蚀剂。 防腐剂优选包括选自分子中包含的两个或更多个羰基通过分子中的碳原子结合的化合物中的至少一种。 更具体地说，优选防锈剂包括选自1,3-二酮化合物，1,4-二酮化合物和三酮化合物中的至少一种。

    POLISHING COMPOSITION
    8.
    发明申请
    POLISHING COMPOSITION 有权
    抛光组合物

    公开(公告)号：US20140342562A1

    公开(公告)日：2014-11-20

    申请号：US14359252

    申请日：2012-11-21

    Applicant: FUJIMI INCORPORATED

    Inventor： Shuugo Yokota ,  Yasuyuki Yamato ,  Satoru Yarita ,  Tomohiko Akatsuka ,  Shuichi Tamada

    IPC: C09G1/02 ,  H01L21/306

    CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1409 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/8258

    Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises odd-shaped abrasive grains and an oxidizing agent having a standard electrode of 0.3 V or more, and preferably further contains a salt, such as an ammonium salt. The pH of the polishing composition is 1 or more and 6 or less, or 8 or more and 14 or less. The average degree of association of the abrasive grains, obtained by dividing the value of the average secondary particle diameter of the abrasive grains by the value of the average primary particle diameter of the abrasive grains, is preferably 1.6 or more.

    Abstract translation: 本发明的抛光组合物用于抛光包含含有高迁移率材料的部分和含有硅材料的部分的物体。 抛光组合物包含异形磨粒和标准电极为0.3V以上的氧化剂，优选还含有盐，例如铵盐。 抛光组合物的pH为1以上6以下，8以上14以下。 通过将磨粒的平均二次粒径的值除以磨粒的平均一次粒径的值得到的磨粒的平均结合度优选为1.6以上。

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