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    Poly 4-aminopyrrole-2-carboxyamide derivatives, and pharmaceutical compositions which contain them
    2.
    发明授权
    Poly 4-aminopyrrole-2-carboxyamide derivatives, and pharmaceutical compositions which contain them 失效
    聚4-氨基吡咯-2-甲酰胺衍生物和含有它们的药物组合物

    公开(公告)号：US5472976A

    公开(公告)日：1995-12-05

    申请号：US109932

    申请日：1993-08-06

    申请人： Fabio Animati ,  Federico Arcamone ,  Giuseppe Giannini ,  Paolo Lombardi

    发明人： Fabio Animati ,  Federico Arcamone ,  Giuseppe Giannini ,  Paolo Lombardi

    IPC分类号： A61K31/40 ,  A61P31/12 ,  A61P35/00 ,  C07D207/34 ,  C07D207/30

    CPC分类号： C07D207/34

    摘要： This invention relates to polyaminopyrrolecarboxyamide derivatives of general formula (I) and their pharmaceutically acceptable salts, in which A represents a chemical bond or an aromatic or heteroaromatic radical, and:if A is a chemical bond, R is hydrogen, alkyl, dialkylaminoalkyl, alkenyl, cycloalkyl, arylalkyl, arylalkenyl, haloalkyl, or an aromatic or heteroaromatic radical;whereas if A is an aromatic or heteroaromatic radical, R is nitro, amino or formylamino;n is 0 or a whole number between 1 and 4;Z is an alkylene or aromatic radical. ##STR1##

    摘要翻译： 本发明涉及通式（I）的聚氨基吡咯酰胺酰胺衍生物及其药学上可接受的盐，其中A表示化学键或芳族或杂芳族基团，以及：如果A是化学键，则R是氢，烷基，二烷基氨基烷基，烯基 ，环烷基，芳基烷基，芳基烯基，卤代烷基或芳族或杂芳族基团; 而如果A是芳族或杂芳族基团，则R是硝基，氨基或甲酰氨基; n为0或1〜4之间的整数; Z是亚烷基或芳族基团。 （1）+ TR

    FAST PROGRAMMING MEMORY DEVICE
    6.
    发明申请
    FAST PROGRAMMING MEMORY DEVICE 有权
    快速编程存储器件

    公开(公告)号：US20110235411A1

    公开(公告)日：2011-09-29

    申请号：US13155347

    申请日：2011-06-07

    申请人： Marco Maccarrone ,  Giuseppe Giannini ,  Demetrio Pellicone

    发明人： Marco Maccarrone ,  Giuseppe Giannini ,  Demetrio Pellicone

    IPC分类号： G11C16/10 ,  G11C16/04

    CPC分类号： G11C16/10 ,  G06F1/28 ,  G06F3/0619 ,  G06F3/0625 ,  G06F3/0653 ,  G06F3/0688 ,  G06F12/0802 ,  G06F13/4282 ,  G06F2212/222 ,  G06F2213/0032 ,  G11C16/0483 ,  G11C16/14 ,  G11C16/26 ,  G11C16/28 ,  G11C16/30 ,  Y02D10/14 ,  Y02D10/151

    摘要： In an embodiment of a memory device including a matrix of memory cells wherein the memory cells are arranged in a plurality of memory cells strings each one including at least two serially-connected memory cells, groups of at least two memory cells strings being connected to a respective bit line, and wherein said memory cells are adapted to be programmed into at least a first programming state and a second programming state, a method of storing data comprising exploiting a single memory cell for each of the memory cells string for writing the data, wherein said exploiting includes bringing the single memory cell to the second programming state, the remaining memory cells of the string being left in the first programming state.

    摘要翻译： 在包括存储器单元矩阵的存储器件的实施例中，其中存储器单元布置在多个存储器单元串中，每个存储单元串包括至少两个串联的存储器单元，至少两个存储器单元串的组被连接到 并且其中所述存储器单元适于被编程为至少第一编程状态和第二编程状态，存储数据的方法包括利用用于写入数据的每个存储器单元串的单个存储器单元， 其中所述利用包括使单个存储器单元进入第二编程状态，所述串的剩余存储单元保持在第一编程状态。