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公开(公告)号：US08329555B2
公开(公告)日：2012-12-11
申请号：US12734994
申请日：2008-10-20
CPC分类号： B81C1/00301 , B81B2207/095 , H01L21/76879 , H01L21/76898 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/05644 , H01L2224/13025 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2924/00014
摘要： A method for producing a capping wafer for a sensor having at least one cap includes: production of a contacting via extending through the wafer, and, temporally subsequent thereto, filling of the contacting via with an electrically conductive material.
摘要翻译： 一种用于制造具有至少一个盖的传感器的封盖晶片的方法包括：产生通过晶片延伸的接触通孔，并且在其后随后通过导电材料填充接触通孔。
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公开(公告)号：US20110012248A1
公开(公告)日：2011-01-20
申请号：US12734994
申请日：2008-10-20
CPC分类号： B81C1/00301 , B81B2207/095 , H01L21/76879 , H01L21/76898 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/05644 , H01L2224/13025 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2924/00014
摘要： A method for producing a capping wafer for a sensor having at least one cap includes: production of a contacting via extending through the wafer, and, temporally subsequent thereto, filling of the contacting via with an electrically conductive material.
摘要翻译： 一种用于制造具有至少一个盖的传感器的封盖晶片的方法包括：产生通过晶片延伸的接触通孔，并且在其后随后通过导电材料填充接触通孔。
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公开(公告)号：US20090026561A1
公开(公告)日：2009-01-29
申请号：US11883671
申请日：2006-01-25
申请人： Frank Reichenbach , Franz Laermer , Silvia Kronmueller , Christoph Schelling , Tino Fuchs , Christina Leinenbach
发明人： Frank Reichenbach , Franz Laermer , Silvia Kronmueller , Christoph Schelling , Tino Fuchs , Christina Leinenbach
CPC分类号： G01L9/0073 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , G01L9/0042 , H04R19/005 , H04R19/04 , H04R31/00
摘要： A micromechanical component having a conductive substrate, an elastically deflectable diaphragm including at least one conductive layer, which is provided over a front side of the substrate, the conductive layer being electrically insulated from the substrate, a hollow space, which is provided between the substrate and the diaphragm and is filled with a medium, and a plurality of perforation openings, which run under the diaphragm through the substrate, the perforation openings providing access to the hollow space from a back surface of the substrate, so that a volume of the medium located in the hollow space may change when the diaphragm is deflected. Also described is a corresponding manufacturing method.
摘要翻译： 一种具有导电基底的微机械元件，包括至少一个导电层的弹性可偏转隔膜，该导电层设置在基板的前侧，导电层与基板电绝缘，中空空间设置在基板 和隔膜，并且填充有介质，以及多个穿孔，其在隔膜下方穿过基底，穿孔开口提供从基底的背面进入中空空间，使得一定体积的介质 当隔膜偏转时，位于中空空间中的位置可能会改变。 还描述了相应的制造方法。
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公开(公告)号：US07834409B2
公开(公告)日：2010-11-16
申请号：US11883671
申请日：2006-01-25
申请人： Frank Reichenbach , Franz Laermer , Silvia Kronmueller , Christoph Schelling , Tino Fuchs , Christina Leinenbach
发明人： Frank Reichenbach , Franz Laermer , Silvia Kronmueller , Christoph Schelling , Tino Fuchs , Christina Leinenbach
CPC分类号： G01L9/0073 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , G01L9/0042 , H04R19/005 , H04R19/04 , H04R31/00
摘要： A micromechanical component having a conductive substrate, an elastically deflectable diaphragm including at least one conductive layer, which is provided over a front side of the substrate, the conductive layer being electrically insulated from the substrate, a hollow space, which is provided between the substrate and the diaphragm and is filled with a medium, and a plurality of perforation openings, which run under the diaphragm through the substrate, the perforation openings providing access to the hollow space from a back surface of the substrate, so that a volume of the medium located in the hollow space may change when the diaphragm is deflected. Also described is a corresponding manufacturing method.
摘要翻译： 一种具有导电基底的微机械元件，包括至少一个导电层的弹性可偏转隔膜，该导电层设置在基板的前侧，导电层与基板电绝缘，中空空间设置在基板 和隔膜，并且填充有介质，以及多个穿孔，其在隔膜下方穿过基底，穿孔开口提供从基底的背面进入中空空间，使得一定体积的介质 当隔膜偏转时，位于中空空间中的位置可能会改变。 还描述了相应的制造方法。
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5.发明申请公开(公告)号：US20090236610A1
公开(公告)日：2009-09-24
申请号：US12282842
申请日：2007-03-09
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
CPC分类号： H01L21/228 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/223 , H01L21/225 , H01L21/324
摘要： A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.
摘要翻译： 提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔 区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。 同样提供相应的半导体结构。
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6.发明授权Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure 失效半导体结构的制造方法以及相应的半导体结构公开(公告)号：US08148234B2
公开(公告)日：2012-04-03
申请号：US12282842
申请日：2007-03-09
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
IPC分类号： H01L21/76
CPC分类号： H01L21/228 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/223 , H01L21/225 , H01L21/324
摘要： A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.
摘要翻译： 提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔 区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。 同样提供相应的半导体结构。
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公开(公告)号：US07898046B2
公开(公告)日：2011-03-01
申请号：US12506219
申请日：2009-07-20
申请人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L21/00
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译： 描述了一种封装的MEMS工艺，其包括在高于450℃的温度下在加工步骤下稳定的高温抗静电涂层。 涂层在器件释放后，但在封装层封口之前应用。 或者，可以在封装之前将抗静电涂层直接施加到释放的装置。
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8.发明授权公开(公告)号：US07582514B2
公开(公告)日：2009-09-01
申请号：US11844844
申请日：2007-08-24
申请人： Cyril Vancura , Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Cyril Vancura , Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L21/44
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450° C. is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译： 描述了一种封装的MEMS工艺，其包括在450℃以上的加工步骤下稳定的高温抗静电涂层。 涂层在器件释放后，但在封装层封口之前应用。 或者，可以在封装之前将抗静电涂层直接施加到释放的装置。
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公开(公告)号：US07563633B2
公开(公告)日：2009-07-21
申请号：US11510040
申请日：2006-08-25
申请人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L21/00
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译： 描述了一种封装的MEMS工艺，其包括在高于450℃的温度下在加工步骤下稳定的高温抗静电涂层。 涂层在器件释放后，但在封装层封口之前应用。 或者，可以在封装之前将抗静电涂层直接施加到释放装置。
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10.发明申请Microelectromechanical Systems Encapsulation Process with Anti-Stiction Coating 有权具有抗静电涂层的微机电系统封装工艺公开(公告)号：US20080050861A1
公开(公告)日：2008-02-28
申请号：US11844844
申请日：2007-08-24
申请人： Cyril Vancura , Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Cyril Vancura , Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L21/00
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450° C. is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译： 描述了一种封装的MEMS工艺，其包括在450℃以上的加工步骤下稳定的高温抗静电涂层。 涂层在器件释放后，但在封装层封口之前应用。 或者，可以在封装之前将抗静电涂层直接施加到释放的装置。
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