公开(公告)号：US09389952B2

公开(公告)日：2016-07-12

申请号：US14543472

申请日：2014-11-17

申请人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yao-Tse Chang ,  Yan Zhou

发明人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yao-Tse Chang ,  Yan Zhou

IPC分类号： G11C29/00 ,  G06F11/10 ,  G11C14/00 ,  G06F12/14 ,  H03M13/11 ,  G11C29/52

CPC分类号： G06F11/1072 ,  G06F11/1016 ,  G06F11/1044 ,  G06F12/0246 ,  G06F12/0804 ,  G06F12/1009 ,  G06F12/1408 ,  G06F17/30132 ,  G06F2212/1036 ,  G06F2212/2022 ,  G06F2212/60 ,  G11C14/0018 ,  G11C29/52 ,  H03M13/1102 ,  H03M13/1515 ,  H03M13/152 ,  H03M13/19 ,  H03M13/353 ,  H03M13/356

摘要： A GNSD (Green NAND Solid State Drive) Driver coupled to host DRAM, and having a memory manager, a data grouper engine, a data ungrouper engine, a power manager, and a flush/resume manager. The GNSD driver is coupled to a GNSD application, and the host DRAM to a Non-Volatile Memory Device. The GNSD Driver further includes a compression/decompression engine, a de-duplication engine, an encryption/decryption engine, or a high-level error correction code engine. The encryption/decryption engine encrypts according to DES (Data Encryption Standard) or AES (Advanced Encryption Standard). A method of operating a GNSD Driver and a GNSD application coupled to DRAM of a host, includes coupling: Configuration and Register O/S Settings to the host and the GNSD Application; a data grouper and data ungrouper to the host DRAM and to Upper and a Lower Filter; a power manager and a memory manager to the host; a flush/resume manager to the DRAM; and the DRAM to an (Super Enhanced Endurance Device) SEED SSD (Solid State Drive).

摘要翻译： 耦合到主机DRAM的GNSD（绿色NAND固态驱动器）驱动器，并具有存储器管理器，数据分组器引擎，数据非分组引擎，电源管理器和刷新/恢复管理器。 GNSD驱动程序与GNSD应用程序相连，主机DRAM耦合到非易失性存储器设备。 GNSD驱动程序还包括压缩/解压缩引擎，重复数据删除引擎，加密/解密引擎或高级错误纠正码引擎。 加密/解密引擎根据DES（数据加密标准）或AES（高级加密标准）进行加密。 操作与主机的DRAM耦合的GNSD驱动程序和GNSD应用程序的方法包括：将主机和GNSD应用程序的配置和注册O / S设置进行耦合; 数据分组器和数据未分组到主机DRAM和上和下滤波器; 电源管理器和内存管理器; DRAM的刷新/恢复管理器; 和DRAM（超级增强型耐力设备）SEED SSD（固态硬盘）。

公开(公告)号：US20160139982A1

公开(公告)日：2016-05-19

申请号：US14543472

申请日：2014-11-17

申请人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yao-Tse Chang ,  Yan Zhou

发明人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yao-Tse Chang ,  Yan Zhou

IPC分类号： G06F11/10 ,  G11C29/52 ,  H03M13/11 ,  G11C14/00 ,  G06F12/14

CPC分类号： G06F11/1072 ,  G06F11/1016 ,  G06F11/1044 ,  G06F12/0246 ,  G06F12/0804 ,  G06F12/1009 ,  G06F12/1408 ,  G06F17/30132 ,  G06F2212/1036 ,  G06F2212/2022 ,  G06F2212/60 ,  G11C14/0018 ,  G11C29/52 ,  H03M13/1102 ,  H03M13/1515 ,  H03M13/152 ,  H03M13/19 ,  H03M13/353 ,  H03M13/356

摘要： A GNSD Driver coupled to host DRAM, and having a memory manager, a data grouper engine, a data ungrouper engine, a power manager, and a flush/resume manager. The GNSD driver is coupled to a GNSD application, and the host DRAM to a Non-Volatile Memory Device. The GNSD Driver further includes a compression/decompression engine, a de-duplication engine, an encryption/decryption engine, or a high-level error correction code engine. The encryption/decryption engine encrypts according to DES or AES. A method of operating a GNSD Driver and a GNSD application coupled to DRAM of a host, includes coupling: Configuration and Register O/S Settings to the host and the GNSD Application; a data grouper and data ungrouper to the host DRAM and to Upper and a Lower Filter; a power manager and a memory manager to the host; a flush/resume manager to the DRAM; and the DRAM to an SEED SSD.

摘要翻译： 连接到主机DRAM的GNSD驱动器，并具有存储器管理器，数据分组器引擎，数据非分组引擎，电源管理器和刷新/恢复管理器。 GNSD驱动程序与GNSD应用程序相连，主机DRAM耦合到非易失性存储器设备。 GNSD驱动程序还包括压缩/解压缩引擎，重复数据删除引擎，加密/解密引擎或高级错误纠正码引擎。 加密/解密引擎根据DES或AES进行加密。 操作与主机的DRAM耦合的GNSD驱动程序和GNSD应用程序的方法包括：将主机和GNSD应用程序的配置和注册O / S设置进行耦合; 数据分组器和数据未分组到主机DRAM和上和下滤波器; 电源管理器和内存管理器; DRAM的刷新/恢复管理器; 和DRAM到SEED SSD。

公开(公告)号：US20120284587A1

公开(公告)日：2012-11-08

申请号：US13540569

申请日：2012-07-02

申请人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

发明人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

IPC分类号： G06F11/16 ,  G06F12/00

CPC分类号： G06F12/0246 ,  G06F3/0608 ,  G06F3/0631 ,  G06F3/0688 ,  G06F12/0868 ,  G06F2212/401 ,  G06F2212/7203 ,  G06F2212/7208 ,  G11C11/5678 ,  G11C13/0004 ,  G11C14/0018 ,  G11C29/765

摘要： A flash drive has increased endurance and longevity by reducing writes to flash. An Endurance Translation Layer (ETL) is created in a DRAM buffer and provides temporary storage to reduce flash wear. A Smart Storage Switch (SSS) controller assigns data-type bits when categorizing host accesses as paging files used by memory management, temporary files, File Allocation Table (FAT) and File Descriptor Block (FDB) entries, and user data files, using address ranges and file extensions read from FAT. Paging files and temporary files are never written to flash. Partial-page data is packed and sector mapped by sub-sector mapping tables that are pointed to by a unified mapping table that stores the data-type bits and pointers to data or tables in DRAM. Partial sectors are packed together to reduce DRAM usage and flash wear. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

摘要翻译： 闪存驱动器通过减少对闪存的写入来提高耐用性和使用寿命。 耐久性翻译层（ETL）在DRAM缓冲区中创建，并提供临时存储以减少闪存磨损。 智能存储交换机（SSS）控制器将主机访问分类为内存管理，临时文件，文件分配表（FAT）和文件描述符块（FDB）条目所使用的页面文件以及用户数据文件时，分配数据类型位，使用地址 从FAT读取的范围和文件扩展名。 分页文件和临时文件不会写入闪存。 部分页面数据由通过统一映射表指向的子扇区映射表进行打包和扇区映射，统一映射表将数据类型位和指针存储到DRAM中的数据或表。 部分行业包装在一起，以减少DRAM的使用和闪存磨损。 DRAM中的备用/交换区域可减少闪存磨损。 当纠错失败时，调整参考电压。

公开(公告)号：US08543742B2

公开(公告)日：2013-09-24

申请号：US13494409

申请日：2012-06-12

申请人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

发明人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

IPC分类号： G06F13/28 ,  G06F3/00 ,  G06F11/00

CPC分类号： G06F13/28 ,  G06F3/0604 ,  G06F3/0658 ,  G06F3/0688 ,  G06F11/1064 ,  G06F12/0246 ,  G06F12/0607 ,  G06F13/385 ,  G06F2212/7208 ,  G06F2212/7211 ,  G06F2213/3802

摘要： A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.

摘要翻译： 智能闪存驱动器具有一个或多个级别的智能存储交换机和较低级别的单芯片闪存设备（SCFD）。 SCFD包含执行低级坏块映射和磨损均衡以及逻辑到物理块映射的闪存和控制器。 SCFD向上游智能存储交换机报告其容量，布置和最大磨损级数（WLC）和坏块号（BBN），将该信息存储在结构寄存器中。 智能存储交换机选择具有最大BBN作为目标的SCFD，而当WLC超过随时间上升的阈值时，具有最低最大WLC的SCFD作为用于损耗均衡的交换的来源。 顶级智能存储交换机从低级智能存储交换机接收统一的容量，安排，WLC和BBN信息。 数据是条带化的，并且可选地由所有级别的智能存储交换机中的冗余冗余阵列（RAID）控制器加扰。

公开(公告)号：US08321597B2

公开(公告)日：2012-11-27

申请号：US13197721

申请日：2011-08-03

申请人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

发明人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

IPC分类号： G06F13/28 ,  G06F9/00

CPC分类号： G06F13/28 ,  G06F3/0658 ,  G06F3/0679 ,  G06F11/108 ,  G06F12/0246 ,  G06F13/385 ,  G06F21/79 ,  G06F2212/7208 ,  G06F2212/7211

摘要： A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.

摘要翻译： 智能闪存驱动器具有一个或多个级别的智能存储交换机和较低级别的单芯片闪存设备（SCFD）。 SCFD包含执行低级坏块映射和磨损均衡以及逻辑到物理块映射的闪存和控制器。 SCFD向上游智能存储交换机报告其容量，布置和最大磨损级数（WLC）和坏块号（BBN），将该信息存储在结构寄存器中。 智能存储交换机选择具有最大BBN作为目标的SCFD，并且具有最低最大WLC的SCFD作为WLC超过随时间上升的阈值时的损耗平衡的交换源。 顶级智能存储交换机从低级智能存储交换机接收统一的容量，安排，WLC和BBN信息。 数据是条带化的，并且可选地由所有级别的智能存储交换机中的冗余冗余阵列（RAID）控制器加扰。

公开(公告)号：US20120278543A1

公开(公告)日：2012-11-01

申请号：US13494409

申请日：2012-06-12

申请人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

发明人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

IPC分类号： G06F12/02

CPC分类号： G06F13/28 ,  G06F3/0604 ,  G06F3/0658 ,  G06F3/0688 ,  G06F11/1064 ,  G06F12/0246 ,  G06F12/0607 ,  G06F13/385 ,  G06F2212/7208 ,  G06F2212/7211 ,  G06F2213/3802

摘要： A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.

摘要翻译： 智能闪存驱动器具有一个或多个级别的智能存储交换机和较低级别的单芯片闪存设备（SCFD）。 SCFD包含执行低级坏块映射和磨损均衡以及逻辑到物理块映射的闪存和控制器。 SCFD向上游智能存储交换机报告其容量，布置和最大磨损级数（WLC）和坏块号（BBN），将该信息存储在结构寄存器中。 智能存储交换机选择具有最大BBN作为目标的SCFD，并且具有最低最大WLC的SCFD作为WLC超过随时间上升的阈值时的损耗平衡的交换源。 顶级智能存储交换机从低级智能存储交换机接收统一的容量，安排，WLC和BBN信息。 数据是条带化的，并且可选地由所有级别的智能存储交换机中的冗余冗余阵列（RAID）控制器加扰。

公开(公告)号：US20110302358A1

公开(公告)日：2011-12-08

申请号：US13197721

申请日：2011-08-03

申请人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

发明人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

IPC分类号： G06F12/00

CPC分类号： G06F13/28 ,  G06F3/0658 ,  G06F3/0679 ,  G06F11/108 ,  G06F12/0246 ,  G06F13/385 ,  G06F21/79 ,  G06F2212/7208 ,  G06F2212/7211

摘要： A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.

摘要翻译： 智能闪存驱动器具有一个或多个级别的智能存储交换机和较低级别的单芯片闪存设备（SCFD）。 SCFD包含执行低级坏块映射和磨损均衡以及逻辑到物理块映射的闪存和控制器。 SCFD向上游智能存储交换机报告其容量，布置和最大磨损级数（WLC）和坏块号（BBN），将该信息存储在结构寄存器中。 智能存储交换机选择具有最大BBN作为目标的SCFD，并且具有最低最大WLC的SCFD作为WLC超过随时间上升的阈值时的损耗平衡的交换源。 顶级智能存储交换机从低级智能存储交换机接收统一的容量，安排，WLC和BBN信息。 数据是条带化的，并且可选地由所有级别的智能存储交换机中的冗余冗余阵列（RAID）控制器加扰。

公开(公告)号：US20110066837A1

公开(公告)日：2011-03-17

申请号：US12947211

申请日：2010-11-16

申请人： Charles C. Lee ,  Abraham C. Ma ,  Frank Yu ,  Shimon Chen

发明人： Charles C. Lee ,  Abraham C. Ma ,  Frank Yu ,  Shimon Chen

IPC分类号： G06F15/177 ,  G06F12/02 ,  G06F13/28 ,  G06F9/24

CPC分类号： G06F9/4401 ,  G06F13/387 ,  G06F2213/3854

摘要： A Multi-Media Card (MMC) Single-Chip Flash Device (SCFD) contains a MMC flash microcontroller and flash mass storage blocks containing flash memory arrays that are block-addressable rather than randomly-addressable. An initial boot loader is read from the first page of flash by a state machine and written to a small RAM. A central processing unit (CPU) in the microcontroller reads instructions from the small RAM, executing the initial boot loader, which reads more pages from flash. These pages are buffered by the small RAM and written to a larger DRAM. Once an extended boot sequence is written to DRAM, the CPU toggles a RAM_BASE bit to cause instruction fetching from DRAM. Then the extended boot sequence is executed from DRAM, copying an OS image from flash to DRAM. Boot code and control code are selectively overwritten during a code updating operation to eliminate stocking issues.

摘要翻译： 多媒体卡（MMC）单片闪存器件（SCFD）包含一个MMC闪存单片机和闪存大容量存储块，其中包含可寻址的闪存阵列，而不是随机寻址。 初始引导加载程序由状态机从闪存的第一页读取并写入小RAM。 微控制器中的中央处理单元（CPU）从小型RAM读取指令，执行初始启动加载程序，从Flash读取更多的页面。 这些页面被小RAM缓冲并写入较大的DRAM。 一旦将扩展引导顺序写入DRAM，CPU将切换一个RAM_BASE位，以使DRAM从DRAM获取指令。 然后从DRAM执行扩展启动顺序，将OS映像从闪存复制到DRAM。 引导代码和控制代码在代码更新操作期间被有选择地覆盖以消除存货问题。

公开(公告)号：US20100275037A1

公开(公告)日：2010-10-28

申请号：US12831160

申请日：2010-07-06

申请人： Charles C. Lee ,  Frank Yu ,  Abraham C. Ma ,  Jim Chin-Nan Ni ,  Shimon Chen

发明人： Charles C. Lee ,  Frank Yu ,  Abraham C. Ma ,  Jim Chin-Nan Ni ,  Shimon Chen

IPC分类号： G06F13/36 ,  G06F13/10 ,  G06F1/04 ,  G06F13/28 ,  H04L9/00 ,  G06F1/32

CPC分类号： G06F13/385 ,  G11C16/102 ,  G11C2216/30 ,  Y02D10/14 ,  Y02D10/151

摘要： A Low-power flash-memory device uses a modified Universal-Serial-Bus (USB) 3.0 Protocol to reduce power consumption. The bit clock is slowed to reduce power and the need for pre-emphasis when USB cable lengths are short in applications. Data efficiency is improved by eliminating the 8/10-bit encoder and instead encoding sync and framing bytes as 9-bit symbols. Data bytes are expanded by bit stuffing only when a series of six ones occurs in the data. Header and payload data is transmitted as nearly 8-bits per data byte while framing is 9-bits per symbol, much less than the standard 10 bits per byte. Low-power link layers, physical layers, and scaled-down protocol layers are used. A card reader converter hub allows USB hosts to access low-power USB devices. Only one flash device is accessed, reducing power compared with standard USB broadcasting to multiple devices.

摘要翻译： 低功耗闪存设备使用修改后的通用串行总线（USB）3.0协议来降低功耗。 当应用程序中的USB电缆长度短时，位时钟减慢了功率，并且需要预加重。 通过消除8/10位编码器并将同步和成帧字节编码为9位符号来提高数据效率。 数据字节只有在数据中出现一系列6个数据字节时才能通过位填充进行扩展。 标头和有效载荷数据以每个数据字节近8位的形式传输，而成帧是每个符号9位，远远小于每个字节的标准10位。 使用低功率链路层，物理层和缩小协议层。 读卡器转换器集线器允许USB主机访问低功耗USB设备。 只有一个闪存设备被访问，与标准的USB广播相比，将功耗降低到多个设备。

公开(公告)号：US08959280B2

公开(公告)日：2015-02-17

申请号：US13540569

申请日：2012-07-02

申请人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

发明人： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

IPC分类号： G06F12/00 ,  G06F13/00 ,  G06F13/28 ,  G06F12/02 ,  G06F3/06 ,  G06F12/08 ,  G11C14/00 ,  G11C11/56 ,  G11C13/00 ,  G11C29/00

CPC分类号： G06F12/0246 ,  G06F3/0608 ,  G06F3/0631 ,  G06F3/0688 ,  G06F12/0868 ,  G06F2212/401 ,  G06F2212/7203 ,  G06F2212/7208 ,  G11C11/5678 ,  G11C13/0004 ,  G11C14/0018 ,  G11C29/765

摘要： A flash drive has increased endurance and longevity by reducing writes to flash. An Endurance Translation Layer (ETL) is created in a DRAM buffer and provides temporary storage to reduce flash wear. A Smart Storage Switch (SSS) controller assigns data-type bits when categorizing host accesses as paging files used by memory management, temporary files, File Allocation Table (FAT) and File Descriptor Block (FDB) entries, and user data files, using address ranges and file extensions read from FAT. Paging files and temporary files are never written to flash. Partial-page data is packed and sector mapped by sub-sector mapping tables that are pointed to by a unified mapping table that stores the data-type bits and pointers to data or tables in DRAM. Partial sectors are packed together to reduce DRAM usage and flash wear. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

摘要翻译： 闪存驱动器通过减少对闪存的写入来提高耐用性和使用寿命。 耐久性翻译层（ETL）在DRAM缓冲区中创建，并提供临时存储以减少闪存磨损。 智能存储交换机（SSS）控制器将主机访问分类为内存管理，临时文件，文件分配表（FAT）和文件描述符块（FDB）条目所使用的页面文件以及用户数据文件时，分配数据类型位，使用地址 从FAT读取的范围和文件扩展名。 分页文件和临时文件不会写入闪存。 部分页面数据由通过统一映射表指向的子扇区映射表进行打包和扇区映射，统一映射表将数据类型位和指针存储到DRAM中的数据或表。 部分行业包装在一起，以减少DRAM的使用和闪存磨损。 DRAM中的备用/交换区域可减少闪存磨损。 当纠错失败时，调整参考电压。