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公开(公告)号：US07078135B2
公开(公告)日：2006-07-18
申请号：US10653589
申请日：2003-09-02
IPC分类号： G01F9/00
摘要： During the lithographic exposure of layers to be patterned on semiconductor products, use is made of masks whose mask pattern is imaged on a reduced scale, with the aid of an imaging optical arrangement, onto the layer to be patterned. After the patterning of the mask layer, a membrane is placed onto the mask with a membrane holder in order to keep dust or other contaminants in the air away from the plane of the mask layer during the exposure. When the mask and the membrane holder are mounted, manufacturing-dictated height deviations thereof lead to subsequent distortion of the mask structure of the mask layer, which is transferred to the semiconductor product by means of the lithography. Here, the height tolerances of the mask and of the membrane holder are measured and a corrected mask pattern is calculated, the mask structures of which are offset in the lateral direction such that the mask distortions resulting from the mounting of the membrane holder are compensated for. The deformations of the mask and of the membrane holder perpendicular to the mask plane are compensated for by lateral displacements of the mask structures of the corrected mask pattern.
摘要翻译： 在要在半导体产品上图案化的层的光刻曝光期间，使用掩模，其掩模图案借助于成像光学布置以缩小的尺度成像到待图案化的层上。 在掩模层的图案化之后，用膜保持器将膜放置在掩模上，以便在曝光期间将灰尘或其它污染物保持在空气中远离掩模层的平面。 当安装掩模和膜保持器时，其制造规定的高度偏差导致掩模层的掩模结构的随后的变形，其通过光刻转印到半导体产品。 这里，测量掩模和膜保持器的高度公差，并且计算校正的掩模图案，其掩模结构在横向方向上偏移，使得由膜保持器的安装导致的掩模失真被补偿 。 垂直于掩模平面的掩模和膜保持器的变形由校正的掩模图案的掩模结构的横向移位来补偿。
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公开(公告)号：US08093713B2
公开(公告)日：2012-01-10
申请号：US11673303
申请日：2007-02-09
CPC分类号： H01L23/3735 , H01L23/291 , H01L23/3732 , H01L23/3738 , H01L23/4334 , H01L23/49562 , H01L23/49586 , H01L24/48 , H01L24/49 , H01L2224/0603 , H01L2224/48247 , H01L2224/49171 , H01L2924/00014 , H01L2924/01068 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The invention concerns a module comprising a carrier element, a semiconductor device mounted on said carrier element and a silicon-based insulating layer. The silicon-based insulating layer is arranged on the side of the carrier element opposite to the semiconductor device. The invention further concerns a module comprising a semiconductor device, a mold compound at least partly covering the semiconductor device and a silicon-based passivation layer. The silicon-based passivation layer covers at least partly the periphery of the mold compound.
摘要翻译： 本发明涉及一种包括载体元件，安装在所述载体元件上的半导体器件和硅基绝缘层的模块。 硅基绝缘层布置在与半导体器件相对的载体元件侧。 本发明还涉及包括半导体器件，至少部分地覆盖半导体器件的模具化合物和硅基钝化层的模块。 硅基钝化层至少部分地覆盖模具化合物的周边。
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公开(公告)号：US20120070941A1
公开(公告)日：2012-03-22
申请号：US13281955
申请日：2011-10-26
CPC分类号： H01L23/3735 , H01L23/291 , H01L23/3732 , H01L23/3738 , H01L23/4334 , H01L23/49562 , H01L23/49586 , H01L24/48 , H01L24/49 , H01L2224/0603 , H01L2224/48247 , H01L2224/49171 , H01L2924/00014 , H01L2924/01068 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The invention concerns a module comprising a carrier element, a semiconductor device mounted on said carrier element and a silicon-based insulating layer. The silicon-based insulating layer is arranged on the side of the carrier element opposite to the semiconductor device. The invention further concerns a module comprising a semiconductor device, a mold compound at least partly covering the semiconductor device and a silicon-based passivation layer. The silicon-based passivation layer covers at least partly the periphery of the mold compound.
摘要翻译： 本发明涉及一种包括载体元件，安装在所述载体元件上的半导体器件和硅基绝缘层的模块。 硅基绝缘层布置在与半导体器件相对的载体元件侧。 本发明还涉及包括半导体器件，至少部分地覆盖半导体器件的模具化合物和硅基钝化层的模块。 硅基钝化层至少部分地覆盖模具化合物的周边。
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公开(公告)号：US08697497B2
公开(公告)日：2014-04-15
申请号：US13281955
申请日：2011-10-26
IPC分类号： H01L21/56
CPC分类号： H01L23/3735 , H01L23/291 , H01L23/3732 , H01L23/3738 , H01L23/4334 , H01L23/49562 , H01L23/49586 , H01L24/48 , H01L24/49 , H01L2224/0603 , H01L2224/48247 , H01L2224/49171 , H01L2924/00014 , H01L2924/01068 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The invention concerns a module comprising a carrier element, a semiconductor device mounted on said carrier element and a silicon-based insulating layer. The silicon-based insulating layer is arranged on the side of the carrier element opposite to the semiconductor device. The invention further concerns a module comprising a semiconductor device, a mold compound at least partly covering the semiconductor device and a silicon-based passivation layer. The silicon-based passivation layer covers at least partly the periphery of the mold compound.
摘要翻译： 本发明涉及一种包括载体元件，安装在所述载体元件上的半导体器件和硅基绝缘层的模块。 硅基绝缘层布置在与半导体器件相对的载体元件侧。 本发明还涉及包括半导体器件，至少部分地覆盖半导体器件的模具化合物和硅基钝化层的模块。 硅基钝化层至少部分地覆盖模具化合物的周边。
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公开(公告)号：US20090065912A1
公开(公告)日：2009-03-12
申请号：US12247031
申请日：2008-10-07
IPC分类号： H01L21/50 , H01L23/495
CPC分类号： H01L23/3142 , C25D3/56 , H01L23/4952 , H01L23/49582 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/85 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/4554 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48464 , H01L2224/48465 , H01L2224/48599 , H01L2224/48655 , H01L2224/73265 , H01L2224/85455 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01028 , H01L2924/01033 , H01L2924/0104 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2224/78 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor package includes a semiconductor component including a circuit carrier with a plurality of inner contact pads, a semiconductor chip, and a plurality of electrical connections. An adhesion promotion layer is disposed on at least areas of the semiconductor component and a plastic encapsulation material encapsulates at least the semiconductor chip, the plurality of electrical connections and the plurality of the inner contact pads. Surface regions of the semiconductor component are selectively activated.
摘要翻译： 半导体封装包括半导体部件，其包括具有多个内部接触焊盘的电路载体，半导体芯片和多个电连接。 粘合促进层设置在半导体部件的至少一部分上，并且塑料封装材料至少封装半导体芯片，多个电连接和多个内部接触焊盘。 选择性地激活半导体部件的表面区域。
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公开(公告)号：US07211355B2
公开(公告)日：2007-05-01
申请号：US11252476
申请日：2005-10-18
摘要： The invention relates to a method for producing phase shifter masks for 157 nm lithography. A coating has an organic material and is at least partially configured on the phase shifter mask. This coating is processed with an electron beam. This allows efficient production of very small structures, even for 157 nm lithography.
摘要翻译： 本发明涉及一种用于制造157nm光刻的移相器掩模的方法。 涂层具有有机材料并且至少部分地配置在移相器掩模上。 用电子束处理该涂层。 这允许非常小的结构的有效生产，甚至对于157nm光刻。
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公开(公告)号：US08410586B2
公开(公告)日：2013-04-02
申请号：US12247031
申请日：2008-10-07
IPC分类号： H01L21/50 , H01L23/495
CPC分类号： H01L23/3142 , C25D3/56 , H01L23/4952 , H01L23/49582 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/85 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/4554 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48464 , H01L2224/48465 , H01L2224/48599 , H01L2224/48655 , H01L2224/73265 , H01L2224/85455 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01028 , H01L2924/01033 , H01L2924/0104 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2224/78 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor package includes a semiconductor component including a circuit carrier with a plurality of inner contact pads, a semiconductor chip, and a plurality of electrical connections. An adhesion promotion layer is disposed on at least areas of the semiconductor component and a plastic encapsulation material encapsulates at least the semiconductor chip, the plurality of electrical connections and the plurality of the inner contact pads. Surface regions of the semiconductor component are selectively activated.
摘要翻译： 半导体封装包括半导体部件，其包括具有多个内部接触焊盘的电路载体，半导体芯片和多个电连接。 粘合促进层设置在半导体部件的至少一部分上，并且塑料封装材料至少封装半导体芯片，多个电连接和多个内部接触焊盘。 选择性地激活半导体部件的表面区域。
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公开(公告)号：US07811860B2
公开(公告)日：2010-10-12
申请号：US11943259
申请日：2007-11-20
IPC分类号： H01L23/14 , H01L23/29 , H01L21/00 , H01L21/31 , H01L21/469
CPC分类号： C23C16/30 , B05D1/60 , B05D5/083 , H01L23/293 , H01L23/3135 , H01L2924/0002 , H01L2924/181 , Y10T428/265 , Y10T428/31504 , Y10T428/31515 , H01L2924/00 , H01L2924/00012
摘要： A method for producing a device and a device is disclosed. In one embodiment, a component is surrounded by a material. A fluoropolymer-containing compound is produced at a surface of the material. A molding is produced from a material and a fluoropolymer-containing compound is produced at a surface of the molding by a vapor deposition.
摘要翻译： 公开了一种用于制造装置和装置的方法。 在一个实施例中，部件被材料包围。 在该材料的表面产生含氟聚合物的化合物。 由材料制造成型体，通过气相沉积在模制品的表面产生含氟聚合物的化合物。
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公开(公告)号：US20080179760A1
公开(公告)日：2008-07-31
申请号：US11943259
申请日：2007-11-20
CPC分类号： C23C16/30 , B05D1/60 , B05D5/083 , H01L23/293 , H01L23/3135 , H01L2924/0002 , H01L2924/181 , Y10T428/265 , Y10T428/31504 , Y10T428/31515 , H01L2924/00 , H01L2924/00012
摘要： A method for producing a device and a device is disclosed. In one embodiment, a component is surrounded by a material. A fluoropolymer-containing compound is produced at a surface of the material. A molding is produced from a material and a fluoropolymer-containing compound is produced at a surface of the molding by a vapor deposition.
摘要翻译： 公开了一种用于制造装置和装置的方法。 在一个实施例中，部件被材料包围。 在该材料的表面产生含氟聚合物的化合物。 由材料制造成型体，通过气相沉积在模制品的表面产生含氟聚合物的化合物。
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