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公开(公告)号：US07851326B2
公开(公告)日：2010-12-14
申请号：US11812386
申请日：2007-06-18
申请人： Franz Dietz , Volker Dudek , Michael Graf , Thomas Hoffmann
发明人： Franz Dietz , Volker Dudek , Michael Graf , Thomas Hoffmann
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A method for producing deep trench structures in an STI structure of a semiconductor substrate is provided, with the following successive process steps: subsequent to a full-area filling of STI recesses introduced into a semiconductor substrate with a first filler material, a first surface of a semiconductor structure is subjected to a CMP process to level the applied filler material and produce the STI structure; the leveled STI structure thus produced is structured; using the structured, leveled STI structure as a hard mask, at least one deep trench is etched in the area of this STI structure to create the deep trench structures.
摘要翻译： 提供一种用于在半导体衬底的STI结构中制造深沟槽结构的方法，具有以下连续的工艺步骤：在用第一填充材料引入到半导体衬底中的STI凹部的全面填充之后， 对半导体结构进行CMP处理以对施加的填充材料进行平整并产生STI结构; 这样生产的水平STI结构是结构化的; 使用结构化的水平STI结构作为硬掩模，在该STI结构的区域中蚀刻至少一个深沟槽以产生深沟槽结构。
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公开(公告)号：US07973333B2
公开(公告)日：2011-07-05
申请号：US11730514
申请日：2007-04-02
申请人： Franz Dietz , Volker Dudek , Thomas Hoffmann , Michael Graf , Stefan Schwantes
发明人： Franz Dietz , Volker Dudek , Thomas Hoffmann , Michael Graf , Stefan Schwantes
IPC分类号： H01L29/66
CPC分类号： H01L29/66659 , H01L29/42368 , H01L29/66681 , H01L29/7816 , H01L29/7835
摘要： A lateral DMOS-transistor is provided that includes a MOS-diode made of a semi-conductor material of a first type of conductivity, a source-area of a second type of conductivity and a drain-area of a second type of conductivity which is separated from the MOS-diode by a drift region made of a semi-conductor material of a second type of conductivity which is at least partially covered by a dielectric gate layer which also covers the semi-conductor material of the MOS-diode. The dielectric gate-layer comprises a first region of a first thickness and a second region of a second thickness. The first region covers the semi-conductor material of the MOS-diode and the second region is arranged on the drift region. A transition takes place from the first thickness to the second thickness such that an edge area of the drift region which is oriented towards the MOS-diode is arranged below the second area of the gate layer. The invention also relates to a method for the production of these types of DMOS-transistors.
摘要翻译： 提供了一种横向DMOS晶体管，其包括由第一导电类型的半导体材料制成的MOS二极管，第二导电类型的源极区域和第二导电类型的漏极区域，其为 通过由第二导电类型的半导体材料制成的漂移区域与MOS二极管分开，所述漂移区域至少部分被还覆盖MOS二极管的半导体材料的介电栅极层覆盖。 介电栅极层包括第一厚度的第一区域和第二厚度的第二区域。 第一区域覆盖MOS二极管的半导体材料，第二区域布置在漂移区域上。 从第一厚度到第二厚度发生转变，使得朝向MOS二极管定向的漂移区的边缘区域布置在栅极层的第二区域的下方。 本发明还涉及一种用于生产这些类型的DMOS晶体管的方法。
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公开(公告)号：US20070235779A1
公开(公告)日：2007-10-11
申请号：US11730514
申请日：2007-04-02
申请人： Franz Dietz , Volker Dudek , Thomas Hoffmann , Michael Graf , Stefan Schwantes
发明人： Franz Dietz , Volker Dudek , Thomas Hoffmann , Michael Graf , Stefan Schwantes
IPC分类号： H01L29/76 , H01L21/8234
CPC分类号： H01L29/66659 , H01L29/42368 , H01L29/66681 , H01L29/7816 , H01L29/7835
摘要： A lateral DMOS-transistor is provided that includes a MOS-diode made of a semi-conductor material of a first type of conductivity, a source-area of a second type of conductivity and a drain-area of a second type of conductivity which is separated from the MOS-diode by a drift region made of a semi-conductor material of a second type of conductivity which is at least partially covered by a dielectric gate layer which also covers the semi-conductor material of the MOS-diode. The dielectric gate-layer comprises a first region of a first thickness and a second region of a second thickness. The first region covers the semi-conductor material of the MOS-diode and the second region is arranged on the drift region. A transition takes place from the first thickness to the second thickness such that an edge area of the drift region which is oriented towards the MOS-diode is arranged below the second area of the gate layer. The invention also relates to a method for the production of these types of DMOS-transistors.
摘要翻译： 提供了一种横向DMOS晶体管，其包括由第一导电类型的半导体材料制成的MOS二极管，第二导电类型的源极区域和第二导电类型的漏极区域，其为 通过由第二导电类型的半导体材料制成的漂移区域与MOS二极管分开，所述漂移区域至少部分被还覆盖MOS二极管的半导体材料的介电栅极层覆盖。 介电栅极层包括第一厚度的第一区域和第二厚度的第二区域。 第一区域覆盖MOS二极管的半导体材料，第二区域布置在漂移区域上。 从第一厚度到第二厚度发生转变，使得朝向MOS二极管定向的漂移区的边缘区域布置在栅极层的第二区域的下方。 本发明还涉及一种用于生产这些类型的DMOS晶体管的方法。
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公开(公告)号：US20070264792A1
公开(公告)日：2007-11-15
申请号：US11812386
申请日：2007-06-18
申请人： Franz Dietz , Volker Dudek , Michael Graf , Thomas Hoffmann
发明人： Franz Dietz , Volker Dudek , Michael Graf , Thomas Hoffmann
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A method for producing deep trench structures in an STI structure of a semiconductor substrate is provided, with the following successive process steps: subsequent to a full-area filling of STI recesses introduced into a semiconductor substrate with a first filler material, a first surface of a semiconductor structure is subjected to a CMP process to level the applied filler material and produce the STI structure; the leveled STI structure thus produced is structured; using the structured, leveled STI structure as a hard mask, at least one deep trench is etched in the area of this STI structure to create the deep trench structures.
摘要翻译： 提供了一种用于在半导体衬底的STI结构中制造深沟槽结构的方法，其具有以下连续的工艺步骤：在用第一填充材料引入到半导体衬底中的STI凹部的全面填充之后， 对半导体结构进行CMP处理以对施加的填充材料进行平整并产生STI结构; 这样生产的水平STI结构是结构化的; 使用结构化的水平STI结构作为硬掩模，在该STI结构的区域中蚀刻至少一个深沟槽以产生深沟槽结构。
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5.发明授权公开(公告)号：US09018561B2
公开(公告)日：2015-04-28
申请号：US12284031
申请日：2008-09-17
CPC分类号： C30B13/24 , B23K26/0622 , B23K26/0738 , C30B29/06 , H01L21/67115
摘要： An apparatus and method of operation for a high power broad band elongated thin beam laser annealing light source, which may comprise a gas discharge seed laser oscillator having a resonance cavity, providing a seed laser output pulse; a gas discharge amplifier laser amplifying the seed laser output pulse to provide an amplified seed laser pulse output; a divergence correcting multi-optical element optical assembly intermediate the seed laser and the amplifier laser. The divergence correcting optical assembly may adjust the size and/or shape of the seed laser output pulse within a discharge region of the amplifier laser in order to adjust an output parameter of the amplified seed laser pulse output. The divergence correcting optical assembly may comprise a telescope with an adjustable focus. The adjustable telescope may comprise an active feedback-controlled actuator based upon a sensed parameter of the amplified seed laser output from the amplifier laser.
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6.发明授权公开(公告)号：US08883600B1
公开(公告)日：2014-11-11
申请号：US13725152
申请日：2012-12-21
申请人： Scott E. Thompson , Lucian Shifren , Pushkar Ranade , Yujie Liu , Sung Hwan Kim , Lingquan Wang , Dalong Zhao , Teymur Bakhishev , Thomas Hoffmann , Sameer Pradhan , Michael Duane
发明人： Scott E. Thompson , Lucian Shifren , Pushkar Ranade , Yujie Liu , Sung Hwan Kim , Lingquan Wang , Dalong Zhao , Teymur Bakhishev , Thomas Hoffmann , Sameer Pradhan , Michael Duane
IPC分类号： H01L21/331 , H01L29/66 , H01L29/78
CPC分类号： H01L29/7833 , H01L21/823814 , H01L21/823821 , H01L29/0847 , H01L29/1041 , H01L29/105 , H01L29/1083 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7834 , H01L29/7836
摘要： A transistor and method of fabrication thereof includes a screening layer formed at least in part in the semiconductor substrate beneath a channel layer and a gate stack, the gate stack including spacer structures on either side of the gate stack. The transistor includes a shallow lightly doped drain region in the channel layer and a deeply lightly doped drain region at the depth relative to the bottom of the screening layer for reducing junction leakage current. A compensation layer may also be included to prevent loss of back gate control.
摘要翻译： 晶体管及其制造方法包括至少部分地形成在沟道层和栅极堆叠下方的半导体衬底中的屏蔽层，栅极堆叠包括在栅极叠层的任一侧上的间隔结构。 晶体管包括沟道层中的浅掺杂稀土漏极区和相对于屏蔽层底部的深度处的深掺杂漏极区，用于减少结漏电流。 还可以包括补偿层以防止背栅控制的损失。
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公开(公告)号：US08321308B2
公开(公告)日：2012-11-27
申请号：US12327354
申请日：2008-12-03
申请人： Georg Podhajsky , Stefan Franke , Andrea Sudbrack , Dietmar Nowotny , Klaus Schlappner , Thomas Hoffmann
发明人： Georg Podhajsky , Stefan Franke , Andrea Sudbrack , Dietmar Nowotny , Klaus Schlappner , Thomas Hoffmann
IPC分类号： G07B17/00
CPC分类号： G06Q10/10 , G06Q20/102 , G06Q30/04 , G06Q30/06 , G06Q40/12 , G06Q40/123
摘要： Methods, systems, and apparatus, including computer program products, for implementing a software architecture design for a software application implementing manual invoicing. The application is structured as multiple process components interacting with each other through service interfaces, and multiple service operations, each being implemented for a respective process component. The process components include a Customer Invoice Processing process component, a Due Item Processing process component, a Payment Processing process component, an Accounting process component, a Project Processing process component, and a Balance of Foreign Payment Management process component.
摘要翻译： 方法，系统和装置，包括计算机程序产品，用于实施用于实施手动发票的软件应用的软件架构设计。 应用程序被构造为通过服务接口彼此交互的多个进程组件，以及针对相应进程组件实现的多个服务操作。 过程组件包括客户发票处理过程组件，到期项目处理过程组件，支付处理过程组件，会计过程组件，项目处理过程组件和外部支付管理平衡流程组件。
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公开(公告)号：US20100070317A1
公开(公告)日：2010-03-18
申请号：US12233417
申请日：2008-09-18
申请人： Nir Pachter , Thomas Bach , Cordula Ude , Tao Yu , Stefan Adelmann , Rainer Heun , Katja Kasteleiner , Andrea Sudbrack , Steffen Hartig , Ralf Reinke , Thomas Breitling , Sandra Boehringer , Daniel Pascariu , Theo Zimmermann , Martin Von Der Emde , Frank Krueger , Andreas Huppert , Andreas Bettin , Renzo Colle , Jochen Hirth , Thomas Hoffmann , Alexander Krasinskiy , Irena Kull , Klaus Reinelt , Jochen Steinbach , Stephan Hetzer
发明人： Nir Pachter , Thomas Bach , Cordula Ude , Tao Yu , Stefan Adelmann , Rainer Heun , Katja Kasteleiner , Andrea Sudbrack , Steffen Hartig , Ralf Reinke , Thomas Breitling , Sandra Boehringer , Daniel Pascariu , Theo Zimmermann , Martin Von Der Emde , Frank Krueger , Andreas Huppert , Andreas Bettin , Renzo Colle , Jochen Hirth , Thomas Hoffmann , Alexander Krasinskiy , Irena Kull , Klaus Reinelt , Jochen Steinbach , Stephan Hetzer
CPC分类号： G06Q40/02 , G06Q10/063 , G06Q10/063114 , G06Q30/04
摘要： Methods, systems, and apparatus, including computer program products, for implementing a software architecture design for a software application implementing sell from stock software useful to process quotations, capture orders, process delivery and invoice. The application is structured as multiple process components interacting with each other through service interfaces, and multiple service operations, each being implemented for a respective process component. The process components include an Accounting process component; a Financial Accounting Master Data Management process component; an Outbound Delivery Processing process component; a Site Logistics Processing process component; an Inventory Processing process component; a Customer Requirement Processing process component; a Supply and Demand Matching process component; a Logistics Execution Control process component; a Due Item Processing process component; a Balance of Foreign Payment Management process component; a Payment Processing process component; a Customer Invoice Processing process component; a Customer Quote Processing process component; and a Sales Order Processing process component.
摘要翻译： 方法，系统和装置，包括计算机程序产品，用于实施软件应用程序的软件架构设计，该软件应用程序实施从用于处理报价，捕获订单，处理交货和发票的库存软件的销售。 应用程序被构造为通过服务接口彼此交互的多个进程组件，以及针对相应进程组件实现的多个服务操作。 流程组件包括会计流程组件; 财务会计硕士数据管理流程组件; 外向交货处理流程组件; 现场物流处理流程组件; 库存处理过程组件; 客户需求处理流程组件; 供需匹配流程组件; 物流执行控制流程组件; 一个到期项目处理过程组件; 外汇支付管理流程部分余额; 付款处理流程组件; 客户发票处理流程组件; 客户报价处理流程组件; 和销售订单处理流程组件。
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公开(公告)号：US20070174156A1
公开(公告)日：2007-07-26
申请号：US11323955
申请日：2005-12-30
摘要： A cash management system includes a cash location business object, an owner business object associated with the cash location business object, and a provider business object associated with the cash location business object. The cash location business object further includes a plurality of attributes including a type of cash.
摘要翻译： 现金管理系统包括现金定位业务对象，与现金位置业务对象相关联的所有者业务对象，以及与现金定位业务对象相关联的供应商业务对象。 现金定位业务对象还包括多种属性，包括一种现金。
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公开(公告)号：US20060208337A1
公开(公告)日：2006-09-21
申请号：US11440613
申请日：2006-05-24
IPC分类号： H01L29/00
CPC分类号： H01L29/78 , H01L29/0653 , H01L29/1033 , H01L29/1054 , H01L29/7842 , H01L29/7843 , Y10S438/938
摘要： A semiconductor device having high tensile stress. The semiconductor device comprises a substrate having a source region and a drain region. Each of the source region and the drain region includes a plurality of separated source sections and drain sections, respectively. A shallow trench isolation (STI) region is formed between two separated source sections of the source region and between two separated drain sections of the drain region. A gate stack is formed on the substrate. A tensile inducing layer is formed over the substrate. The tensile inducing layer covers the STI regions, the source region, the drain region, and the gate stack. The tensile inducing layer is an insulation capable of causing tensile stress in the substrate.
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