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    Integrated circuit array
    1.
    发明申请
    Integrated circuit array 审中-公开
    集成电路阵列

    公开(公告)号：US20050224888A1

    公开(公告)日：2005-10-13

    申请号：US11116139

    申请日：2005-04-27

    申请人： Andrew Graham ,  Franz Hofmann ,  Wolfgang Honlein ,  Johannes Kretz ,  Franz Kreupl ,  Erhard Landgraf ,  Richard Luyken ,  Wolfgang Roesner ,  Thomas Schulz ,  Michael Specht

    发明人： Andrew Graham ,  Franz Hofmann ,  Wolfgang Honlein ,  Johannes Kretz ,  Franz Kreupl ,  Erhard Landgraf ,  Richard Luyken ,  Wolfgang Roesner ,  Thomas Schulz ,  Michael Specht

    IPC分类号： G11C13/02 ,  H01L29/78 ,  H01L51/00 ,  H01L51/30 ,  H01L29/76

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C2213/17 ,  H01L27/283 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0512

    摘要： Integrated circuit array having field effect transistors (FETs) formed next to and/or above one another. The array has a substrate, a planarized first wiring plane with interconnects and first source/drain regions of the FETs, a planarized first insulator layer on the first wiring plane, a planarized gate region layer, which has patterned gate regions made of electrically conductive material and insulator material introduced therebetween, on the first insulated layer, a planarized second insulator layer on the gate region layer, holes formed through the second insulator layer, the gate regions, and the first insulator layer, a vertical nanoelement serving as a channel region in each of the holes, a second wiring plane with interconnects and second source/drain regions of the FETs, each nanoelement being arranged between the first and second wiring planes, and a gate insulating layer between the respective vertical nanoelement and the electrically conductive material of the gate regions.

    摘要翻译： 集成电路阵列具有形成在彼此之上和/或彼此之上的场效应晶体管（FET）。 阵列具有衬底，具有互连的平坦化的第一布线面和FET的第一源极/漏极区，在第一布线平面上的平坦化的第一绝缘体层，平坦化的栅极区域层，其具有由导电材料制成的图案化栅极区域 和介于其间的绝缘体材料，在所述第一绝缘层上，在所述栅极区域层上的平坦化的第二绝缘体层，穿过所述第二绝缘体层，所述栅极区域和所述第一绝缘体层形成的空穴，用作所述沟道区域中的沟道区域的垂直纳米元件 每个孔，具有互连的第二布线面和FET的第二源极/漏极区，每个纳米元件布置在第一和第二布线平面之间，并且在相应的垂直纳米元件和导电材料之间的栅极绝缘层 门区域。

    Semiconductor memory with vertical memory transistors and method for fabricating it
    2.
    发明申请
    Semiconductor memory with vertical memory transistors and method for fabricating it 有权
    具有垂直存储晶体管的半导体存储器及其制造方法

    公开(公告)号：US20050199942A1

    公开(公告)日：2005-09-15

    申请号：US11073205

    申请日：2005-03-05

    申请人： Franz Hofmann ,  Erhard Landgraf ,  Richard Luyken ,  Thomas Schulz ,  Michael Specht

    发明人： Franz Hofmann ,  Erhard Landgraf ,  Richard Luyken ,  Thomas Schulz ,  Michael Specht

    IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/792

    CPC分类号： H01L21/28282 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7923 ,  H01L29/7926

    摘要： The invention relates to a semiconductor memory having a multiplicity of memory cells and a method for forming the memory cells. The semiconductor memory generally includes a semiconductor layer arranged on a substrate surface that includes a normally positioned step between a deeper region and a higher region. The semiconductor memory further includes doped contact regions, channel regions, a trapping layer arranged on a gate oxide layer, and at least one gate electrode. The method for forming the memory cells includes patterning a semiconductor layer to form a deeper semiconductor region and a higher semiconductor region having a step positioned between the regions. The method further includes forming a first oxide layer and a trapping layer, and then removing portions of the trapping layer and the first oxide layer and applying a second oxide layer at least regions of a doped region, the trapping layer, and the step area, and applying a gate electrode to the second oxide layer and doping, at least in regions, of the deeper semiconductor region and the higher semiconductor region to form a deeper contact region and a higher contact region.

    摘要翻译： 本发明涉及具有多个存储单元的半导体存储器和用于形成存储单元的方法。 半导体存储器通常包括布置在衬底表面上的半导体层，其包括较深区域和较高区域之间的正常定位的台阶。 半导体存储器还包括掺杂接触区域，沟道区域，布置在栅极氧化物层上的俘获层和至少一个栅电极。 形成存储单元的方法包括图案化半导体层以形成较深的半导体区域和具有位于该区域之间的台阶的较高半导体区域。 该方法还包括形成第一氧化物层和俘获层，然后去除俘获层和第一氧化物层的部分，并且至少在掺杂区域，俘获层和台阶区域的区域上施加第二氧化物层， 以及向所述第二氧化物层施加栅电极，并且至少在所述较深半导体区域和所述较高半导体区域的区域中掺杂以形成更深的接触区域和更高的接触区域。

    Word and bit line arrangement for a FinFET semiconductor memory
    3.
    发明申请
    Word and bit line arrangement for a FinFET semiconductor memory 审中-公开
    用于FinFET半导体存储器的字和位线布置

    公开(公告)号：US20050199913A1

    公开(公告)日：2005-09-15

    申请号：US11074345

    申请日：2005-03-07

    申请人： Franz Hofmann ,  Thomas Schulz ,  Michael Specht

    发明人： Franz Hofmann ,  Thomas Schulz ,  Michael Specht

    IPC分类号： H01L21/8247 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

    CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/66833 ,  H01L29/785 ,  H01L29/792

    摘要： The invention relates to a semiconductor memory having a multiplicity of fins made of semiconductor material which are spaced apart from one another, a multiplicity of channel regions and contact regions being formed in each of the fins, a multiplicity of word lines, a multiplicity of storage layers, at least one of the storage layers being arranged between each of the channel regions and the word line, and a multiplicity of bit lines, the longitudinal axes of first bit line portions running parallel to a first bit line direction and the longitudinal axes of second bit line portions running parallel to a second bit line direction, the second bit line direction being rotated relative to the first bit line direction, each of the bit lines being electrically connected to a multiplicity of the contact regions, wherein, between two contact regions of the same fin that are connected to one of the bit lines, a contact region is not connected to the respective bit line.

    摘要翻译： 本发明涉及一种半导体存储器，其具有由半导体材料制成的多个鳍片，它们彼此间隔开，多个通道区域和接触区域形成在每个鳍片中，多个字线，多个存储器 存储层中的至少一个布置在每个沟道区域和字线之间，并且多个位线，第一位线部分的纵向轴线平行于第一位线方向延伸，并且纵向轴线 第二位线部分平行于第二位线方向延伸，第二位线方向相对于第一位线方向旋转，每个位线电连接到多个接触区域，其中在两个接触区域之间 与位线之一连接的相同的鳍片，接触区域不连接到相应的位线。

    Semiconductor memory with vertical memory transistors and method for fabricating it
    7.
    发明授权
    Semiconductor memory with vertical memory transistors and method for fabricating it 有权
    具有垂直存储晶体管的半导体存储器及其制造方法

    公开(公告)号：US07265413B2

    公开(公告)日：2007-09-04

    申请号：US11073205

    申请日：2005-03-05

    申请人： Franz Hofmann ,  Erhard Landgraf ,  Richard Johannes Luyken ,  Thomas Schulz ,  Michael Specht

    发明人： Franz Hofmann ,  Erhard Landgraf ,  Richard Johannes Luyken ,  Thomas Schulz ,  Michael Specht

    IPC分类号： H01L29/792

    CPC分类号： H01L21/28282 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7923 ,  H01L29/7926

    摘要： The invention relates to a semiconductor memory having a multiplicity of memory cells and a method for forming the memory cells. The semiconductor memory generally includes a semiconductor layer arranged on a substrate surface that includes a normally positioned step between a deeper region and a higher region. The semiconductor memory further includes doped contact regions, channel regions, a trapping layer arranged on a gate oxide layer, and at least one gate electrode. The method for forming the memory cells includes patterning a semiconductor layer to form a deeper semiconductor region and a higher semiconductor region having a step positioned between the regions. The method further includes forming a first oxide layer and a trapping layer, and then removing portions of the trapping layer and the first oxide layer and applying a second oxide layer at least regions of a doped region, the trapping layer, and the step area, and applying a gate electrode to the second oxide layer and doping, at least in regions, of the deeper semiconductor region and the higher semiconductor region to form a deeper contact region and a higher contact region.

    摘要翻译： 本发明涉及具有多个存储单元的半导体存储器和用于形成存储单元的方法。 半导体存储器通常包括布置在衬底表面上的半导体层，其包括较深区域和较高区域之间的正常定位的台阶。 半导体存储器还包括掺杂接触区域，沟道区域，布置在栅极氧化物层上的俘获层和至少一个栅电极。 形成存储单元的方法包括图案化半导体层以形成较深的半导体区域和具有位于该区域之间的台阶的较高半导体区域。 该方法还包括形成第一氧化物层和俘获层，然后去除俘获层和第一氧化物层的部分，并且至少在掺杂区域，俘获层和台阶区域的区域上施加第二氧化物层， 以及向所述第二氧化物层施加栅电极，并且至少在所述较深半导体区域和所述较高半导体区域的区域中掺杂以形成更深的接触区域和更高的接触区域。