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    Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
    3.
    发明授权
    Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film 失效
    用于沉积低介电常数碳掺杂氧化硅膜的热CVD工艺

    公开(公告)号：US06602806B1

    公开(公告)日：2003-08-05

    申请号：US09632668

    申请日：2000-08-07

    申请人： Li-Qun Xia ,  Fabrice Geiger ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

    发明人： Li-Qun Xia ,  Fabrice Geiger ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

    IPC分类号： H01L2131

    CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31633

    摘要： A method for providing a dielectric film having a low dielectric constant. The deposited film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. The low dielectric constant film is a carbon-doped silicon oxide layer deposited from a thermal, as opposed to plasma, CVD process. The layer is deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si—C) bond. During the deposition process the wafer is heated to a temperature less than 250° C. and preferably to a temperature between 100-200° C. Enhancements to the process include adding Boron and/or Phosphorus dopants, two step deposition, and capping the post cured layer.

    摘要翻译： 一种提供具有低介电常数的电介质膜的方法。 沉积膜特别可用作集成电路中的金属间或前金属介电层。 低介电常数膜是从与CVD等离子体相反的CVD法沉积的碳掺杂氧化硅层。 该层由臭氧的工艺气体和具有至少一个硅 - 碳（Si-C）键的有机硅烷前体沉积。 在沉积过程中，将晶片加热到低于250℃的温度，优选加热到100-200℃之间的温度。对该方法的增强包括加入硼和/或磷掺杂剂，两步沉积和封盖柱 固化层。

    Process for forming a low dielectric constant carbon-containing film
    6.
    发明授权
    Process for forming a low dielectric constant carbon-containing film 失效
    用于形成低介电常数含碳膜的方法

    公开(公告)号：US06632478B2

    公开(公告)日：2003-10-14

    申请号：US09791989

    申请日：2001-02-22

    申请人： Frederic Gaillard ,  Li-Qun Xia ,  Jen Shu ,  Ellie Yieh ,  Tian-Hoe Lim

    发明人： Frederic Gaillard ,  Li-Qun Xia ,  Jen Shu ,  Ellie Yieh ,  Tian-Hoe Lim

    IPC分类号： C23C1640

    CPC分类号： B05D1/60 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3146 ,  H01L21/31633

    摘要： An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbon-containing layer to remove at least some of the carbon. The transforming step may include annealing the carbon-containing layer in a furnace containing a hydrogen atmosphere, for example. The carbon-containing layer may be a carbon-doped silicon oxide material, where the transforming step changes the carbon-doped silicon oxide. Additionally, the method may include subjecting the annealed layer to a hydrogen and/or low oxygen plasma treatment to further remove carbon from the layer. Additionally, a step of adding a capping layer to the annealed, plasma treated material is provided. Products made by the above methods are also included, such as a product including a low k carbon-containing layer where the low k carbon-containing layer has been transformed to remove some of the carbon from the layer. An additional product includes a transformed carbon-containing layer further subjected to a hydrogen plasma treatment to remove more carbon from the layer. Further, a capping layer deposited over the transformed and hydrogen plasma treated layer is provided.

    摘要翻译： 本发明的一个实施方案提供了形成具有低介电常数和良好间隙填充能力的含碳层的方法。 一种方法包括在基底上沉积含碳层并转化含碳层以除去至少一些碳。 转化步骤可以包括例如在含有氢气氛的炉子中退火含碳层。 含碳层可以是碳掺杂的氧化硅材料，其中转化步骤改变碳掺杂的氧化硅。 另外，该方法可以包括对退火层进行氢和/或低氧等离子体处理以进一步从层去除碳。 此外，提供了向退火的等离子体处理材料添加覆盖层的步骤。 还包括通过上述方法制备的产品，例如包含低k含碳层的产品，其中低k含碳层已被转化以从层中去除一些碳。 另外的产物包括进一步进行氢等离子体处理以从层中除去更多的碳的转化含碳层。 此外，提供了沉积在转化和氢等离子体处理层上的覆盖层

    Surface treatment of c-doped SiO2 film to enhance film stability during O2 ashing
    7.
    发明授权
    Surface treatment of c-doped SiO2 film to enhance film stability during O2 ashing 失效
    表面处理c掺杂的SiO 2膜，以提高O2在灰化期间的稳定性

    公开(公告)号：US06583497B2

    公开(公告)日：2003-06-24

    申请号：US10192274

    申请日：2002-07-09

    申请人： Li-Qun Xia ,  Tian-Hoe Lim ,  Frederic Gaillard ,  Ellie Yieh

    发明人： Li-Qun Xia ,  Tian-Hoe Lim ,  Frederic Gaillard ,  Ellie Yieh

    IPC分类号： H01L2358

    CPC分类号： H01L21/02126 ,  C23C16/0218 ,  C23C16/401 ,  C23C16/56 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31612 ,  H01L21/31633

    摘要： A method for forming an insulation layer over a substrate. The method forms a carbon-doped silicon oxide layer by thermal chemical vapor deposition using an organosilane. The carbon-doped silicon oxide layer is subsequently cured and densified. In one embodiment, the cured film is densified in a nitrogen-containing plasma. The method is particularly suitable for deposition of low dielectric constant films, i.e., where k is less than or equal to 3.0. Low-k, carbon-doped silicon oxide methylsilane or di-, tri-, tetra-, or phenylmethylsilane. and ozone. The above method can be carried out in a substrate processing system having a process chamber; a substrate holder, a heater, a gas delivery system, and a power supply, all of which are coupled to a controller. The controller contains a memory having a computer-readable medium with a program embodied for directing operation of the system in accordance with above method.

    摘要翻译： 一种在衬底上形成绝缘层的方法。 该方法通过使用有机硅烷的热化学气相沉积形成碳掺杂氧化硅层。 碳掺杂氧化硅层随后被固化和致密化。 在一个实施方案中，固化膜在含氮等离子体中致密化。 该方法特别适用于沉积低介电常数膜，即其中k小于或等于3.0。 低k，碳掺杂的氧化硅甲基硅烷或二，三，四或苯基甲基硅烷。 和臭氧。 上述方法可以在具有处理室的基板处理系统中进行; 衬底保持器，加热器，气体输送系统和电源，所有这些都耦合到控制器。 控制器包含具有计算机可读介质的存储器，该计算机可读介质具有根据上述方法指导系统操作的程序。