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    Methods of fabricating defect-free semiconductor structures
    1.
    发明授权
    Methods of fabricating defect-free semiconductor structures 有权
    制造无缺陷半导体结构的方法

    公开(公告)号：US09142422B2

    公开(公告)日：2015-09-22

    申请号：US14070823

    申请日：2013-11-04

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Hung-Wei Liu ,  Zhiguo Sun ,  Huang Liu ,  Jin Ping Liu

    IPC: H01L21/311 ,  H01L23/58

    CPC classification number: H01L23/564 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/76826 ,  H01L21/76837 ,  H01L21/823418 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods of facilitating fabrication of defect-free semiconductor structures are provided which include, for instance: providing a dielectric layer, the dielectric layer comprising at least one consumable material; selectively removing a portion of the dielectric layer, wherein the selectively removing consumes, in part, a remaining portion of the at least one consumable material, leaving, within the remaining portion of the dielectric layer, a depleted region; and subjecting the depleted region of the dielectric layer to a treatment process, to restore the depleted region with at least one replacement consumable material, thereby facilitating fabrication of a defect-free semiconductor structure.

    Abstract translation: 提供了有助于制造无缺陷半导体结构的方法，其包括例如：提供介电层，该电介质层包括至少一种可消耗材料; 选择性地去除所述电介质层的一部分，其中所述选择性去除部分地消耗所述至少一种可消耗材料的剩余部分，在所述电介质层的剩余部分内留下耗尽区; 并且对所述介质层的所述耗尽区进行处理处理，以用至少一种替代的可消耗材料恢复所述耗尽区，从而有助于制造无缺陷的半导体结构。

    Method of forming a dielectric film
    2.
    发明授权
    Method of forming a dielectric film 有权
    形成电介质膜的方法

    公开(公告)号：US08993446B2

    公开(公告)日：2015-03-31

    申请号：US13868412

    申请日：2013-04-23

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Hung-Wei Liu ,  Tsung-Liang Chen ,  Huang Liu ,  Zhiguo Sun

    IPC: H01L21/311 ,  H01L21/02

    CPC classification number: H01L21/02112 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/76837

    Abstract: A method for flowable oxide deposition is provided. An oxygen source gas is increased as a function of time or film depth to change the flowable oxide properties such that the deposited film is optimized for gap fill near a substrate surface where high aspect ratio shapes are present. The oxygen gas flow rate increases as the film depth increases, such that the deposited film is optimized for planarization quality at the upper regions of the deposited film.

    Abstract translation: 提供了一种可流动氧化物沉积的方法。 作为时间或膜深度的函数，氧源气体增加以改变可流动的氧化物性质，使得沉积膜针对存在高纵横比形状的衬底表面附近的间隙填充进行了优化。 氧气流速随着膜深度的增加而增加，使得沉积膜对沉积膜的上部区域的平坦化质量进行了优化。

    Gate height uniformity in semiconductor devices
    3.
    发明授权
    Gate height uniformity in semiconductor devices 有权
    半导体器件栅极高度均匀性

    公开(公告)号：US09093560B2

    公开(公告)日：2015-07-28

    申请号：US14032740

    申请日：2013-09-20

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Tsung-Liang Chen ,  Hung-Wei Liu ,  Rohit Pal ,  Hsin-Neng Tai ,  Huey-Ming Wang ,  Tae Hoon Lee ,  Songkram Srivathanakul ,  Danni Chen

    IPC: H01L21/31 ,  H01L21/8238 ,  H01L27/092

    CPC classification number: H01L29/42364 ,  H01L21/823828 ,  H01L21/823857 ,  H01L21/823864 ,  H01L27/092

    Abstract: Methods of facilitating gate height uniformity by controlling recessing of dielectric material and semiconductor devices formed from the methods are provided. The methods include, for instance, forming a transistor of the semiconductor device with an n-type transistor and a p-type transistor, the n-type transistor and the p-type transistor including plurality of sacrificial gate structures and protective masks at upper surfaces of the plurality of sacrificial gate structures; providing a dielectric material over and between the plurality of sacrificial gate structures; partially densifying the dielectric material to form a partially densified dielectric material; further densifying the partially densified dielectric material to create a modified dielectric material; and creating substantially planar surface on the modified dielectric material, to control dielectric material recess and gate height.

    Abstract translation: 提供了通过控制由这些方法形成的介电材料和半导体器件的凹陷来促进栅极高度均匀性的方法。 所述方法包括例如用n型晶体管和p型晶体管形成半导体器件的晶体管，n型晶体管和p型晶体管包括多个牺牲栅极结构和在上表面处的保护掩模 的多个牺牲栅极结构; 在多个牺牲栅极结构之上和之间提供电介质材料; 部分致密化介电材料以形成部分致密化的电介质材料; 进一步致密化部分致密化的介电材料以产生改性的介电材料; 以及在改性介电材料上形成基本平坦的表面，以控制电介质材料凹陷和栅极高度。

    METHOD OF FORMING A DIELECTRIC FILM
    4.
    发明申请
    METHOD OF FORMING A DIELECTRIC FILM 有权
    形成电介质膜的方法

    公开(公告)号：US20140315385A1

    公开(公告)日：2014-10-23

    申请号：US13868412

    申请日：2013-04-23

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Hung-Wei Liu ,  Tsung-Liang Chen ,  Huang Liu ,  Zhiguo Sun

    IPC: H01L21/02

    CPC classification number: H01L21/02112 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/76837

    Abstract: A method for flowable oxide deposition is provided. An oxygen source gas is increased as a function of time or film depth to change the flowable oxide properties such that the deposited film is optimized for gap fill near a substrate surface where high aspect ratio shapes are present. The oxygen gas flow rate increases as the film depth increases, such that the deposited film is optimized for planarization quality at the upper regions of the deposited film.

    Abstract translation: 提供了一种可流动氧化物沉积的方法。 作为时间或膜深度的函数，氧源气体增加以改变可流动的氧化物性质，使得沉积膜针对存在高纵横比形状的衬底表面附近的间隙填充进行了优化。 氧气流速随着膜深度的增加而增加，使得沉积膜对沉积膜的上部区域的平坦化质量进行了优化。

    Method of forming a low-K dielectric film
    5.
    发明授权
    Method of forming a low-K dielectric film 有权
    形成低K电介质膜的方法

    公开(公告)号：US08716150B1

    公开(公告)日：2014-05-06

    申请号：US13860603

    申请日：2013-04-11

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Zhiguo Sun ,  Songkram Srivathanakul ,  Huang Liu ,  Hung-Wei Liu

    IPC: H01L21/469 ,  H01L21/31

    CPC classification number: H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0234

    Abstract: Methods of forming a semiconductor device are provided. The methods include, for example, forming a low-k dielectric having a continuous planar surface, and, after forming the low-k dielectric, subjecting the continuous planar surface of the low-k dielectric to an ethylene plasma enhanced chemical vapor deposition (PECVD) treatment.

    Abstract translation: 提供了形成半导体器件的方法。 所述方法包括例如形成具有连续平坦表面的低k电介质，并且在形成低k电介质之后，使低k电介质的连续平面表面经受乙烯等离子体增强化学气相沉积（PECVD ）治疗。

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