公开(公告)号：US09478509B2

公开(公告)日：2016-10-25

申请号：US14198711

申请日：2014-03-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ronald G. Filippi ,  Erdem Kaltalioglu ,  Andrew T. Kim ,  Ping-Chuan Wang ,  Lijuan Zhang

IPC: H01L23/00 ,  H01L23/48

CPC classification number: H01L24/05 ,  H01L23/481 ,  H01L24/03 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L2224/03312 ,  H01L2224/0332 ,  H01L2224/03426 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/0361 ,  H01L2224/03616 ,  H01L2224/039 ,  H01L2224/0391 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05012 ,  H01L2224/05015 ,  H01L2224/05018 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05187 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/08145 ,  H01L2224/11312 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/94 ,  H01L2924/12042 ,  H01L2924/35121 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2224/83 ,  H01L2224/80 ,  H01L2924/00014 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/00012 ,  H01L2224/034

Abstract: The present invention relates generally to flip chip technology and more particularly, to a method and structure for fabricating a mechanically anchored controlled collapse chip connection (C4) pad on a semiconductor structure. In an embodiment, a method is disclosed that may include forming a bonding pad having one or more anchor regions that extend into a semiconductor structure and may inhibit the bonding pad from physically separating from the TSV during temperature fluctuations.

Abstract translation: 本发明一般涉及倒装芯片技术，更具体地说，涉及用于在半导体结构上制造机械锚定的控制崩溃芯片连接（C 4）焊盘的方法和结构。 在一个实施例中，公开了一种方法，其可以包括形成具有延伸到半导体结构中的一个或多个锚定区域的焊盘，并且可能在温度波动期间阻止焊盘与TSV物理分离。

公开(公告)号：US09318414B2

公开(公告)日：2016-04-19

申请号：US14065454

申请日：2013-10-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Fen Chen ,  Minhua Lu ,  Timothy D. Sullivan ,  Ping-Chuan Wang ,  Lijuan Zhang

IPC: H01L23/48 ,  H01L23/522

CPC classification number: H01L23/481 ,  H01L23/5226 ,  H01L2224/11 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure generally provides for integrated circuit (IC) structures with through-semiconductor vias (TSV). In an embodiment, an IC structure may include a through-semiconductor via (TSV) embedded in a substrate, the TSV having a cap; a dielectric layer adjacent to the substrate; a metal layer adjacent to the dielectric layer; a plurality of vias each embedded within the dielectric layer and coupling the metal layer to the cap of the TSV at respective contact points, wherein the plurality of vias is configured to create a substantially uniform current density throughout the TSV.

Abstract translation: 本公开通常提供具有贯穿半导体通孔（TSV）的集成电路（IC）结构。 在一个实施例中，IC结构可以包括嵌入在衬底中的贯穿半导体通孔（TSV），TSV具有帽; 与基板相邻的电介质层; 与介电层相邻的金属层; 多个通孔，每个通孔嵌入在电介质层内，并将金属层耦合到各个接触点处的TSV的盖，其中多个通孔被配置成在整个TSV中产生基本均匀的电流密度。

公开(公告)号：US09318413B2

公开(公告)日：2016-04-19

申请号：US14065451

申请日：2013-10-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Fen Chen ,  Andrew T. Kim ,  Minhua Lu ,  Timothy D. Sullivan ,  Ping-Chuan Wang ,  Lijuan Zhang

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/481 ,  H01L21/76849 ,  H01L21/76898 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure generally provides for an integrated circuit (IC) structure with a TSV, and methods of manufacturing the IC structure and the TSV. An IC structure according to embodiments of the present invention may include a through-semiconductor via (TSV) embedded within a substrate, the TSV having an axial end; and a metal cap contacting the axial end of the TSV, wherein the metal cap has a greater electrical resistivity than the TSV.

Abstract translation: 本公开通常提供具有TSV的集成电路（IC）结构以及制造IC结构和TSV的方法。 根据本发明的实施例的IC结构可以包括嵌入在基板内的贯穿半导体通孔（TSV），TSV具有轴向端; 以及与TSV的轴向端接触的金属盖，其中金属帽具有比TSV更大的电阻率。