公开(公告)号：US20110050366A1

公开(公告)日：2011-03-03

申请号：US12570610

申请日：2009-09-30

申请人： Farrokh Ayazi ,  Ashwin Samarao

发明人： Farrokh Ayazi ,  Ashwin Samarao

IPC分类号： H03H9/15

CPC分类号： H03H9/02448 ,  H03H9/02259 ,  H03H9/2405 ,  H03H9/2463 ,  H03H2009/0244 ,  H03H2009/02496 ,  H03H2009/2415

摘要： A microelectromechanical (MEMs) resonator includes a concave bulk acoustic resonator (CBAR). One embodiment of a CBAR includes a substrate and a resonator body suspended over the substrate by a pair of fixed supports that attach to first and second opposing ends of the resonator body. The resonator body has a first concave-shaped side extending between the first and second ends of the resonator body and a second concave-shaped side extending opposite the first concave-shaped side. The resonator body may be configured to have a minimum spacing of λ/2 between the first and second concave-shaped sides, where λ is a wavelength associated with a resonant frequency of said resonator body.

摘要翻译： 微机电（MEMs）谐振器包括凹体积声共振器（CBAR）。 CBAR的一个实施例包括通过附接到谐振器本体的第一和第二相对端的一对固定支撑件悬挂在衬底上的衬底和谐振器体。 谐振器本体具有在谐振器本体的第一端和第二端之间延伸的第一凹形侧和与第一凹入侧相对延伸的第二凹入侧。 谐振器体可以被配置为在第一和第二凹入侧之间具有λ/ 2的最小间隔，其中λ是与所述谐振器本体的谐振频率相关联的波长。

公开(公告)号：US20170314995A1

公开(公告)日：2017-11-02

申请号：US15516821

申请日：2015-10-09

申请人： Thomas ROCZNIK ,  Fabian PURKL ,  Gary O'BRIEN ,  Ando FEYH ,  Bongsang KIM ,  Ashwin SAMARAO ,  Gary YAMA ,  Robert Bosch GmbH

发明人： Thomas Rocznik ,  Fabian Purkl ,  Gary O'Brien ,  Ando Feyh ,  Bongsang Kim ,  Ashwin Samarao ,  Gary Yama

IPC分类号： G01J5/06 ,  G01J5/08 ,  G01J5/24

CPC分类号： G01J5/06 ,  G01J5/0809 ,  G01J5/0853 ,  G01J5/20 ,  G01J5/24 ,  G01J2005/066 ,  G01J2005/067

摘要： A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.

公开(公告)号：US09154108B2

公开(公告)日：2015-10-06

申请号：US13808363

申请日：2011-07-06

申请人： Farrokh Ayazi ,  Ashwin Samarao

发明人： Farrokh Ayazi ,  Ashwin Samarao

IPC分类号： H03H9/24 ,  H03H3/007 ,  H03H9/02 ,  H01G4/012 ,  H01G4/12

CPC分类号： H03H9/2405 ,  H01G4/012 ,  H01G4/12 ,  H03H3/0072 ,  H03H9/02007 ,  H03H9/24 ,  H03H2009/02251 ,  H03H2009/02496 ,  Y10T29/49002 ,  Y10T29/49117

摘要： The present invention is directed towards a self-polarized capacitive micromechanical resonator apparatus and fabrication method. The apparatus includes a body member capable of retaining a polarization charge in the absence of a polarization voltage source. By creating potential wells or charge traps on the surface of the resonant body member through a nitrogen diffusing process, charges may be trapped in the charge traps. Unless perturbed externally, the charges remain trapped thus enabling a self-polarization technique without the need for any externally applied polarization voltage.

摘要翻译： 本发明涉及一种自极化电容微机械谐振器装置及其制造方法。 该装置包括能够在没有极化电压源的情况下保持极化电荷的主体部件。 通过通过氮扩散工艺在谐振体部件的表面上产生潜在的阱或电荷阱，电荷可能被捕获在电荷阱中。 除非外部干扰，否则电荷仍被捕获，从而实现了自极化技术，而不需要任何外部施加的极化电压。

公开(公告)号：US20100127798A1

公开(公告)日：2010-05-27

申请号：US12534401

申请日：2009-08-03

申请人： Farrokh Ayazi ,  Ashwin Samarao

发明人： Farrokh Ayazi ,  Ashwin Samarao

IPC分类号： H03H9/00 ,  H01L21/30 ,  H01L21/50

CPC分类号： H03H9/2463 ,  H03H9/02275 ,  H03H9/02401 ,  H03H9/02433 ,  H03H9/2405 ,  H03H2009/02496 ,  H03H2009/241 ,  Y10T29/49002

摘要： A micro-electromechanical resonator includes an electrically-trimmed resonator body having at least one stiffness-enhanced semiconductor region therein containing metal-semiconductor lattice bonds. These metal-semiconductor lattice bonds may be gold-silicon lattice bonds and/or aluminum-silicon lattice bonds. A surface of the resonator body is mass-loaded with the metal, which may be provided by a plurality of spaced-apart metal islands. These metal islands may be aligned along a longitudinal axis of the resonator body. A size of the at least one stiffness-enhanced polycrystalline semiconductor region may be sufficient to yield an increase in resonant frequency of the resonator body relative to an otherwise equivalent resonator having a single crystal resonator body that is free of mass-loading by the metal.

摘要翻译： 微机电谐振器包括电修剪的谐振器本体，其中至少一个刚度增强的半导体区域包含金属 - 半导体晶格键。 这些金属 - 半导体晶格键可以是金 - 硅晶格键和/或铝 - 硅晶格键。 谐振器本体的表面上装有金属，金属可由多个间隔开的金属岛提供。 这些金属岛可以沿着谐振器本体的纵向轴线对齐。 所述至少一个刚度增强多晶半导体区域的尺寸可能足以产生谐振器体相对于具有单晶谐振器体的另外等效的谐振器的谐振频率的增加，所述单晶谐振器本体不受金属的质量负载。

公开(公告)号：US08575819B1

公开(公告)日：2013-11-05

申请号：US13184970

申请日：2011-07-18

申请人： Harmeet Bhugra ,  Ashwin Samarao

发明人： Harmeet Bhugra ,  Ashwin Samarao

IPC分类号： H01L41/107 ,  H01L41/09 ,  H03H9/00 ,  H03L7/00 ,  H03L1/00

CPC分类号： H03H9/173 ,  H03H2009/02204 ,  H03H2009/155

摘要： Microelectromechanical resonators include a resonator body with a built-in piezoelectric-based varactor diode. This built-in varactor diode supports passive frequency tuning by enabling low-power manipulation of the stiffness of a piezoelectric layer, in response to controlling charge build-up therein at resonance. A resonator may include a composite stack of a bottom electrode, a piezoelectric layer on the bottom electrode and at least one top electrode on the piezoelectric layer. The piezoelectric layer includes a built-in varactor diode, which is defined by at least two regions having different concentrations of electrically active dopants therein.

摘要翻译： 微机电谐振器包括具有内置的基于压电的变容二极管的谐振器体。 这种内置的变容二极管响应于在谐振时控制其中的电荷积聚而支持对压电层的刚度进行低功率操作的无源频率调谐。 谐振器可以包括底部电极的复合叠层，底部电极上的压电层和压电层上的至少一个顶部电极。 压电层包括内置的变容二极管，其由其中具有不同浓度的电活性掺杂剂的至少两个区域限定。

公开(公告)号：US20130106533A1

公开(公告)日：2013-05-02

申请号：US13808363

申请日：2011-07-06

申请人： Farrokh Ayazi ,  Ashwin Samarao

发明人： Farrokh Ayazi ,  Ashwin Samarao

IPC分类号： H03H9/24 ,  H03H3/007 ,  H03H9/02

CPC分类号： H03H9/2405 ,  H01G4/012 ,  H01G4/12 ,  H03H3/0072 ,  H03H9/02007 ,  H03H9/24 ,  H03H2009/02251 ,  H03H2009/02496 ,  Y10T29/49002 ,  Y10T29/49117

摘要： The present invention is directed towards a self-polarized capacitive micromechanical resonator apparatus and fabrication method. The apparatus includes a body member capable of retaining a polarization charge in the absence of a polarization voltage source. By creating potential wells or charge traps on the surface of the resonant body member through a nitrogen diffusing process, charges may be trapped in the charge traps. Unless perturbed externally, the charges remain trapped thus enabling a self-polarization technique without the need for any externally applied polarization voltage.

摘要翻译： 本发明涉及一种自极化电容微机械谐振器装置及其制造方法。 该装置包括能够在没有极化电压源的情况下保持极化电荷的主体部件。 通过通过氮扩散工艺在谐振体部件的表面上产生潜在的阱或电荷阱，电荷可能被捕获在电荷阱中。 除非外部干扰，否则电荷仍被捕获，从而实现了自极化技术，而不需要任何外部施加的极化电压。

公开(公告)号：US08063720B2

公开(公告)日：2011-11-22

申请号：US12570610

申请日：2009-09-30

申请人： Farrokh Ayazi ,  Ashwin Samarao

发明人： Farrokh Ayazi ,  Ashwin Samarao

IPC分类号： H03H9/24 ,  H03H9/125 ,  H03H9/46

CPC分类号： H03H9/02448 ,  H03H9/02259 ,  H03H9/2405 ,  H03H9/2463 ,  H03H2009/0244 ,  H03H2009/02496 ,  H03H2009/2415

摘要： A microelectromechanical (MEMs) resonator includes a concave bulk acoustic resonator (CBAR). One embodiment of a CBAR includes a substrate and a resonator body suspended over the substrate by a pair of fixed supports that attach to first and second opposing ends of the resonator body. The resonator body has a first concave-shaped side extending between the first and second ends of the resonator body and a second concave-shaped side extending opposite the first concave-shaped side. The resonator body may be configured to have a minimum spacing of λ/2 between the first and second concave-shaped sides, where λ is a wavelength associated with a resonant frequency of said resonator body.

摘要翻译： 微机电（MEMs）谐振器包括凹体积声共振器（CBAR）。 CBAR的一个实施例包括通过附接到谐振器本体的第一和第二相对端的一对固定支撑件悬挂在衬底上的衬底和谐振器体。 谐振器本体具有在谐振器本体的第一端和第二端之间延伸的第一凹形侧和与第一凹入侧相对延伸的第二凹入侧。 谐振器体可以被配置为在第一和第二凹入侧之间具有λ/ 2的最小间隔，其中λ是与所述谐振器本体的谐振频率相关联的波长。

公开(公告)号：US20170367172A1

公开(公告)日：2017-12-21

申请号：US15535293

申请日：2015-12-14

申请人： Seow Yuen YEE ,  Gary YAMA ,  Bongsang KIM ,  Ashwin SAMARAO ,  Robert Bosch GmbH

发明人： Seow Yuen Yee ,  Gary Yama ,  Bongsang Kim ,  Ashwin Samarao

IPC分类号： H05K1/02 ,  A61B5/11 ,  A61B5/00 ,  A61B5/01 ,  H05K1/14 ,  H05K1/18 ,  H05K3/00 ,  H05K3/28 ,  H05K3/30 ,  H05K1/03 ,  H05K1/11 ,  H05K3/12

CPC分类号： H05K1/028 ,  A61B5/0022 ,  A61B5/01 ,  A61B5/11 ,  A61B5/4519 ,  A61B5/4528 ,  A61B5/4542 ,  A61B5/6833 ,  A61B2560/0242 ,  A61B2560/0412 ,  A61B2562/0204 ,  A61B2562/0247 ,  A61B2562/0271 ,  A61B2562/028 ,  A61B2562/029 ,  A61B2562/066 ,  A61B2562/12 ,  A61B2562/164 ,  H01L2924/0002 ,  H05K1/0278 ,  H05K1/0281 ,  H05K1/0393 ,  H05K1/118 ,  H05K1/148 ,  H05K1/189 ,  H05K3/005 ,  H05K3/0052 ,  H05K3/0058 ,  H05K3/0097 ,  H05K3/1216 ,  H05K3/281 ,  H05K3/285 ,  H05K3/30 ,  H05K2201/053 ,  H05K2201/09063 ,  H05K2201/10037 ,  H05K2201/10121 ,  H05K2201/10151 ,  H05K2203/1453 ,  H05K2203/1545 ,  H01L2924/0001

摘要： A modular deformable electronics platform is attachable to a deformable surface, such as skin. The platform is tolerant to surface deformation and motion, can flex in and out of a plane of the platform without hindering operability of electrical components included on the platform, and is formed via arrangement of discrete flexible tiles, with corners of adjacent tiles connected by a flexible connection material so that individual tiles can translate and rotate relative to each other. Interconnects disposed on bases of separate tiles electrically connect adjacent tiles via their connected corners, and electrically connect components disposed on different tiles. Each pair of adjacent corner connections defines an axis about which at least a portion of the platform can flex without deformation and without hindering connections between tiles. The flexible material and/or bases of the tiles can include Parylene.

公开(公告)号：US08354332B2

公开(公告)日：2013-01-15

申请号：US12570623

申请日：2009-09-30

申请人： Farrokh Ayazi ,  Ashwin Samarao

发明人： Farrokh Ayazi ,  Ashwin Samarao

IPC分类号： H02N11/00 ,  H01L21/22

CPC分类号： H01L41/113 ,  H01L29/84 ,  H03H3/0077 ,  H03H9/2463 ,  H03H9/467 ,  H03H2003/0414 ,  H03H2007/006

摘要： A micro-electromechanical resonator includes a resonator body having a semiconductor region therein doped with boron to a level greater than about 1×1018 cm−3 and even greater than about 1×1019 cm−3, in order to obtain reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range. Still further improvements in TCF can be achieved by degenerately doping the resonator body with boron and/or by boron-assisted aluminum doping of the resonator body.

摘要翻译： 微机电谐振器包括谐振器体，其具有其中掺杂有硼的半导体区域到大于约1×10 18 cm -3且甚至大于约1×10 19 cm -3的水平，以便获得温度系数的降低 在相对较大的温度范围内谐振器的频率（TCF）。 可以通过用硼简谐掺杂谐振器体和/或通过谐振器体的硼辅助铝掺杂来实现TCF的进一步改进。

公开(公告)号：US20100127596A1

公开(公告)日：2010-05-27

申请号：US12570623

申请日：2009-09-30

申请人： Farrokh Ayazi ,  Ashwin Samarao

发明人： Farrokh Ayazi ,  Ashwin Samarao

IPC分类号： H02N11/00 ,  H01L21/22

CPC分类号： H01L41/113 ,  H01L29/84 ,  H03H3/0077 ,  H03H9/2463 ,  H03H9/467 ,  H03H2003/0414 ,  H03H2007/006

摘要： A micro-electromechanical resonator includes a resonator body having a semiconductor region therein doped with boron to a level greater than about 1×1018 cm−3 and even greater than about 1×1019 cm−3, in order to obtain reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range. Still further improvements in TCF can be achieved by degenerately doping the resonator body with boron and/or by boron-assisted aluminum doping of the resonator body.

摘要翻译： 微机电谐振器包括谐振器体，其具有其中掺杂有硼的半导体区域到大于约1×10 18 cm -3且甚至大于约1×10 19 cm -3的水平，以便获得温度系数的降低 在相对较大的温度范围内谐振器的频率（TCF）。 可以通过用硼简谐掺杂谐振器体和/或通过谐振器体的硼辅助铝掺杂来实现TCF的进一步改进。