摘要:
An apparatus embodiment of the present invention includes a memory array with lines of memory cells. The lines are coupled to respective wordlines. The lines may be selected by a wordline signal that is asserted responsive to a first clock signal being asserted. The apparatus also includes “write wordline” generators coupled to respective ones of the wordlines. A write wordline generator will assert a write wordline signal responsive to a second clock signal being asserted and before the next time the first clock signal is asserted, but after the first clock signal is deasserted. The apparatus further includes a comparator, which has a first set of inputs coupled to bit lines of the memory cells for reading the contents of the cells, and a second set of inputs for reading a data value. The comparator has a compare match output upon which it asserts a compare match signal if the contents matches the data value. In response to the compare match and write wordline signals, a write operation occurs for the line. Due to the timing of the write wordline signal, the write operation advantageously occurs in the same clock cycle during which the line was selected without any additional decoding.
摘要:
A self resetting CMOS (SRCMOS) circuit operates with a variable clock cycle. Circuit oscillation is avoided in either long or short clock cycles. At the same time, the circuit eliminates overlapping currents by incorporating a ground interrupt device. The reset generation path is optimized to provide a fast and narrow reset pulse. In addition, the circuit saves power.
摘要:
A de-coupled memory access system including a memory access control circuit is configured to generate first and second independent, de-coupled time references. The memory access control circuit includes a read initiate circuit responsive to the first time reference and a read signal for generating a read enable signal, and a write initiate circuit responsive to the second time reference and a write signal for generating a write enable signal independent of the read enable signal for providing independent, de-coupled write access to a memory array.
摘要:
In order to provide an improved wiring management approach, a multiple port memory apparatus (200) is proposed, which comprises a first memory field of a first memory array (201) of at least three memory arrays (201, 202, 203) storing first data, wherein the first memory field is identified by a first address, a first memory field of a second memory array (202) of the at least three memory arrays (201, 202, 203) storing second data, wherein the first memory field of the second memory array (202) is also identified by the first address, and a first memory field of a third memory array (203) of the at least three memory arrays (201, 202, 203) storing select data indicating, whether the first data or the second data, each stored under the first address but in different memory arrays, have been lastly written.
摘要:
A memory write timing system includes a modified memory bitcell including a storage device and a write/read circuit for writing/reading data to/from the storage device; and an output circuit for detecting the current state of the storage device.
摘要:
A high performance shared cache is provided to support multiprocessor systems and allow maximum parallelism in accessing the cache by the processors, servicing one processor request in each machine cycle, reducing system response time and increasing system throughput. The shared cache of the present invention uses the additional performance optimization techniques of pipelining cache operations (loads and stores) and burst-mode data accesses. By including built-in pipeline stages, the cache is enabled to service one request every machine cycle from any processing element. This contributes to reduction in the system response time as well as the throughput. With regard to the burst-mode data accesses, the widest possible data out of the cache can be stored to, and retrieved from, the cache by one cache access operation. One portion of the data is held in logic in the cache (on the chip), while another portion (corresponding to the system bus width) gets transferred to the requesting element (processor or memory) in one cycle. The held portion of the data can then be transferred in the following machine cycle.
摘要:
A memory write timing system includes a modified memory bitcell including a storage device and a write/read circuit for writing/reading data to/from the storage device; and an output circuit for detecting the current state of the storage device.
摘要:
A method for controlling access to at least one external cache memory in a processing system, the at least one external cache memory having a number of lines of data and a number of bytes per line of data, the method includes determining a smallest cache memory size for use in the at least one external cache memory, and configuring a tag array of the at least one external cache memory to support the smallest determined cache memory size. A system for controlling access to at least one external cache memory in a processing system, the at least one external cache memory having a number of lines of data and a number of bytes per line of data, includes a circuit for configuring each tag field of a plurality of tag fields in a tag array in the at least one external cache memory to have a number of bits sufficient to support a smallest determined cache memory, and utilizing each tag field to determine whether data being accessed resides in the at least one external cache memory.
摘要:
A method and apparatus for providing single clock cycle pipelined access of a memory system, which combines synchronization and self resetting techniques, includes an array of memory cells that are arranged into columns and rows and intercoupled by bit lines and word lines. The memory system also includes an address decoder and a sense enable circuit. The address decoder, upon receiving an address, interprets the address to enable a particular word line, or word lines, and to disable precharging of a bit line, or bit lines. With the word line active, the sense enable circuit generates a sense enable signal when the clock signal has encountered a transitional edge, or is in an active state. When the sense enable signal is active, the sense amplifier reads the data from the addressed memory cell via the bit lines to produce output data.