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1.发明授权公开(公告)号：US06320479B1
公开(公告)日：2001-11-20
申请号：US09464805
申请日：1999-12-17
IPC分类号： H03H9135
CPC分类号： H03H9/135
摘要： In accordance with the invention, magnetostrictive saw devices are provided with improved transducer structures for enhanced performance. In one improved device, the transducers are in the form of gratings with interconnected ends for reduced resistance and inductance. In another embodiment, the transducers are shaped to provide apodization. In yet a third embodiment, transducer performance is enhanced by patterning composite structures.
摘要翻译： 根据本发明，磁致伸缩锯装置具有改进的换能器结构，以提高性能。 在一个改进的器件中，传感器是具有互连端的光栅形式，用于降低电阻和电感。 在另一个实施例中，换能器成形为提供变迹。 在第三实施例中，通过图案化复合结构来提高换能器性能。
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2.发明授权Magnetostrictive surface acoustic wave device and microelectronic circuit including same 有权磁致伸缩表面波器件和包括其的微电子电路
公开(公告)号：US06046657A
公开(公告)日：2000-04-04
申请号：US137431
申请日：1998-08-21
CPC分类号： H03H9/135
摘要： An improved surface acoustic wave device includes a film of a magnetostrictive material disposed on a substrate and spaced apart input and output transducer elements disposed on the film. The input element causes horizontally polarized shear waves to propagate along the film via the magnetostriction of the film. The shear waves propagating along the film are received by the output transducer element. The SAW device can be integrated on a microelectronic circuit useable in single chip radio frequency applications.
摘要翻译： 改进的表面声波装置包括设置在基板上的磁致伸缩材料的膜和设置在膜上的间隔开的输入和输出换能器元件。 输入元件使得水平极化的剪切波通过膜的磁致伸缩沿着膜传播。 沿着膜传播的剪切波被输出换能器元件接收。 SAW器件可以集成在可用于单芯片射频应用的微电子电路上。
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公开(公告)号：US6060406A
公开(公告)日：2000-05-09
申请号：US86252
申请日：1998-05-28
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28238 , H01L29/517 , H01L21/31604 , H01L29/4966 , H01L29/4975 , H01L29/513
摘要： The specification describes silicon MOS devices with gate dielectrics having the composition Ta.sub.1-x Al.sub.x O.sub.y, where x is 0.03-0.7 and y is 1.5-3, Ta.sub.1-x Si.sub.x O.sub.y, where x is 0.05-0.15, and y is 1.5-3, and Ta.sub.1-x-z Al.sub.x Si.sub.z O.sub.y, where 0.7>x+z>0.05, z
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公开(公告)号：US06590241B1
公开(公告)日：2003-07-08
申请号：US09519909
申请日：2000-03-07
IPC分类号： H01L2976
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28238 , H01L21/31604 , H01L29/4966 , H01L29/4975 , H01L29/513 , H01L29/517
摘要： The specification describes silicon MOS devices with gate dielectrics having the composition Ta1−xAlxOy, where x is 0.03-0.7 and y is 1.5-3, Ta1−xSixOy, where x is 0.05-0.15, and y is 1.5-3, and Ta1−x−zAlxSizOy, where 0.7>x+z>0.05, z
摘要翻译： 该说明书描述了具有组成为Ta1-xAlxOy的栅极电介质的硅MOS器件，其中x为0.03-0.7，y为1.5-3，Ta1-xSixOy，其中x为0.05-0.15，y为1.5-3，Ta1- x-zAlxSizOy，其中0.7> x + z> 0.05，z <0.15，y为1.5-3。 与标准的SiO 2栅极电介质材料相比，这些材料提供了改进的介电性能，并且在高温下基本上保持无定形。 这阻碍了SiO 2界面层的形成，否则这主要是栅极介电性质，并降低了使用高介电材料的总体有效性。
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公开(公告)号：US06716488B2
公开(公告)日：2004-04-06
申请号：US09887938
申请日：2001-06-22
申请人： Debra Anne Fleming , Gideon S. Grader , David Wilfred Johnson, Jr. , John Thomson, Jr. , Robert Bruce Van Dover
发明人： Debra Anne Fleming , Gideon S. Grader , David Wilfred Johnson, Jr. , John Thomson, Jr. , Robert Bruce Van Dover
IPC分类号： H01F100
CPC分类号： H01F41/24 , B82Y30/00 , C03C17/25 , C03C2217/216 , C03C2217/217 , C03C2217/23 , C04B41/009 , C04B41/5036 , C04B41/87 , C04B2111/00422 , C04B41/4543 , C04B41/455 , C04B35/10
摘要： A ferrite layer formation process that may be performed at a lower temperature than conventional ferrite formation processes. The formation process may produce highly anisotropic structures. A ferrite layer is deposited on a substrate while the substrate is exposed to a magnetic field. An intermediate layer may be positioned between the substrate and the ferrite to promote bonding of the ferrite to the substrate. The process may be performed at temperatures less than 300° C. Ferrite film anisotropy may be achieved by embodiments of the invention in the range of about 1000 dyn-cm/cm3 to about 2×106 dyn-cm/cm3.
摘要翻译： 可以在比常规铁素体形成工艺更低的温度下进行的铁素体层形成工艺。 形成过程可能产生高度各向异性的结构。 在衬底暴露于磁场的同时，在衬底上沉积铁素体层。 中间层可以位于基底和铁素体之间，以促进铁素体与基底的结合。 该方法可以在低于300℃的温度下进行。铁氧体膜各向异性可以通过本发明的实施方案在约1000dyncm -1 / cm 3至约2×10 6 dyn-cm / cm 3的范围内实现。 3>。
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公开(公告)号：US06573818B1
公开(公告)日：2003-06-03
申请号：US09540618
申请日：2000-03-31
IPC分类号： H01F2702
CPC分类号： H01F17/0006 , H01F27/245 , H01F27/2804 , H01F2027/2819
摘要： The present invention is a planar spiral inductor a top magnetic layer a bottom magnetic layer; and a plurality of conductive coils disposed between said top magnetic layer and said bottom magnetic layer. A significant difference from prior art is that the top and bottom magnetic layers have their centers effectively cut out using lithographic techniques or other techniques to frame the core of the conductive spirals. An advantage of this structure over the prior art is that when magnetic anisotropies other than shape are kept small, then the magnetic configuration will produce a magnetostatic shape anisotropy such that the easy axis (low energy direction of magnetization) lies parallel to the legs of a rectangular frame or the circumference of a circular frame, as will be described. During operation of the inductor, the field produced by the coils flows in a radial direction and will be perpendicular to the easy axis direction thereby causing magnetization reversal to occur by rotation while advantageously utilizing the full structure in this mode.
摘要翻译： 本发明是一种平面螺旋电感器，一个顶部磁性层，一个底部磁性层; 以及设置在所述顶部磁性层和所述底部磁性层之间的多个导电线圈。 与现有技术的显着差异在于，使用光刻技术或其他技术来使顶部和底部磁性层有效地切出它们的中心以构成导电螺旋的芯。 与现有技术相比，该结构的优点是当除形状之外的磁各向异性保持较小时，则磁性构型将产生静磁形状各向异性，使得容易轴（磁化强度的低能量方向）平行于 矩形框架或圆形框架的圆周，如将要描述的。 在电感器工作期间，由线圈产生的磁场在径向方向上流动并且将垂直于易轴方向，从而通过旋转而产生磁化反转，同时有利地利用该模式中的全部结构。
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7.发明授权Article comprising a dielectric material of ZR-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same 有权包含ZR-Ge-Ti-O或Hf-Ge-Ti-O的介电材料的制品及其制造方法公开(公告)号：US06437392B1
公开(公告)日：2002-08-20
申请号：US09456807
申请日：1999-12-08
IPC分类号： H01L27108
CPC分类号： H01L21/28194 , H01L21/02197 , H01L21/02266 , H01L21/31691 , H01L27/1085 , H01L29/511 , H01L29/517
摘要： The invention relates to dielectric materials comprising films of R—Ge—Ti—O where R is selected from Zr and Hf, and to methods of making the same. The dielectric material preferably has the formula Rx—Gey—Tiz—Ow where 0.05≧x≦1, 0.05≧y≦1, 0.1≧z≦1, and 1≧w≦2, and x+y+z≅1, and more preferably, where 0.15≧x≦0.7, 0.05≧y≦0.3, 0.25≧z≦0.7, and 1.95≧w≦2.05, and x+y+z≅1. The invention is particularly useful in silicon-chip integrated circuit devices including a capacitor of a dynamic random access memory (DRAM) device.
摘要翻译： 本发明涉及包含R-Ge-Ti-O（其中R选自Zr和Hf）的膜的电介质材料及其制备方法。 介电材料优选具有式Rx-Gey-Tiz-Ow，其中0.05> = x <= 1,0.05> = y <= 1，0.1> = z <= 1，1> = w <= 2，x + y +z≅1，更优选地，其中0.15> = x <= 0.7,0.05> = y <= 0.3,0.25> = z <= 0.7和1.95> = w <= 2.05，并且x + y + z≅1。 本发明在包括动态随机存取存储器（DRAM）设备的电容器的硅芯片集成电路器件中特别有用。
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8.发明授权
公开(公告)号：US5998048A
公开(公告)日：1999-12-07
申请号：US33204
申请日：1998-03-02
申请人： Sungho Jin , Timothy J. Klemmer , Thomas Henry Tiefel, deceased , Robert Bruce Van Dover , Wei Zhu
发明人： Sungho Jin , Timothy J. Klemmer , Thomas Henry Tiefel, deceased , Robert Bruce Van Dover , Wei Zhu
CPC分类号： H01F10/132 , G11B5/3109 , G11B5/39 , G11B5/3903 , H01F10/138 , H01F10/265 , Y10S428/90
摘要： The invention is embodied in an anisotropic, soft magnetic thin film article comprising a cobalt-iron-chromium-nitrogen (Co--Fe--Cr--N) alloy. The thin film is formed such that the alloy has a relatively high saturation magnetization (4.pi.M.sub.s), e.g., greater than approximately 8 kilogauss (kG), a relatively low coercivity (H.sub.c), e.g., less than approximately 2.0 oersteds (Oe), a relatively high squareness ratio (M.sub.r /M.sub.s), e.g., greater than approximately 0.90, and a relatively high anisotropy field (H.sub.k), e.g., greater than approximately 20 Oe, in an as-deposited condition or, alternatively, with a relatively low temperature treatment, e.g., below approximately 300.degree. Celsius. The inventive films are suitable for use in electromagnetic devices, e.g., in microtransformer cores, inductor cores and in magnetic read-write heads.
摘要翻译： 本发明体现在包含钴 - 铁 - 铬 - 氮（Co-Fe-Cr-N）合金的各向异性软磁薄膜制品中。 形成薄膜使得合金具有相对高的饱和磁化强度（4πMs），例如大于约8千兆（kG），较低的矫顽力（Hc），例如小于约2.0奥斯特（Oe） ，相对高的矩形比（Mr / Ms），例如，大于约0.90，以及比较高的各向异性场（Hk），例如大于约20Oe，或者相对于 低温处理，例如低于约300℃。 本发明的膜适用于电磁装置，例如在微型变压器芯，电感芯和磁读写头中。
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公开(公告)号：US5956073A
公开(公告)日：1999-09-21
申请号：US770613
申请日：1996-12-19
摘要： Embodiments of the invention include a transformer device having a saturation region for limiting ingress noise and other noise. The transformer comprises a magnetic core, an input coil and an output coil arranged so that the output signal caused by the magnetic linkage between the input and output coils through the magnetic core is based on the magnitude of the input signal. According to an embodiment of the invention, the magnetic core includes a saturation region that limits the output signal regardless of the magnitude of the input signal once the saturation region reaches its saturation magnetization state. The saturation region comprises a reduced saturation magnetization level caused by a geometrically constricted region of the magnetic core or, alternatively, by a modified, magnetic-equivalent region having properties similar to a geometrically constricted region.
摘要翻译： 本发明的实施例包括具有用于限制入噪声和其它噪声的饱和区域的变压器装置。 变压器包括磁芯，输入线圈和输出线圈，其布置成使得通过磁芯的输入和输出线圈之间的磁连杆引起的输出信号基于输入信号的大小。 根据本发明的实施例，一旦饱和区域达到其饱和磁化状态，磁芯就包括限制输出信号而不管输入信号幅度的饱和区域。 饱和区域包括由磁芯的几何收缩区域引起的饱和磁化强度降低，或者替代地，具有类似于几何收缩区域的性质的改进的磁等效区域。
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