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公开(公告)号：US5956073A
公开(公告)日：1999-09-21
申请号：US770613
申请日：1996-12-19
摘要： Embodiments of the invention include a transformer device having a saturation region for limiting ingress noise and other noise. The transformer comprises a magnetic core, an input coil and an output coil arranged so that the output signal caused by the magnetic linkage between the input and output coils through the magnetic core is based on the magnitude of the input signal. According to an embodiment of the invention, the magnetic core includes a saturation region that limits the output signal regardless of the magnitude of the input signal once the saturation region reaches its saturation magnetization state. The saturation region comprises a reduced saturation magnetization level caused by a geometrically constricted region of the magnetic core or, alternatively, by a modified, magnetic-equivalent region having properties similar to a geometrically constricted region.
摘要翻译： 本发明的实施例包括具有用于限制入噪声和其它噪声的饱和区域的变压器装置。 变压器包括磁芯，输入线圈和输出线圈，其布置成使得通过磁芯的输入和输出线圈之间的磁连杆引起的输出信号基于输入信号的大小。 根据本发明的实施例，一旦饱和区域达到其饱和磁化状态，磁芯就包括限制输出信号而不管输入信号幅度的饱和区域。 饱和区域包括由磁芯的几何收缩区域引起的饱和磁化强度降低，或者替代地，具有类似于几何收缩区域的性质的改进的磁等效区域。
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2.发明授权
公开(公告)号：US5780175A
公开(公告)日：1998-07-14
申请号：US595543
申请日：1996-02-02
申请人： Li-Han Chen , Sungho Jin , Wei Zhu , Robert Bruce van Dover
发明人： Li-Han Chen , Sungho Jin , Wei Zhu , Robert Bruce van Dover
IPC分类号： C22C38/00 , C22C38/26 , C22C38/28 , G11B5/127 , G11B5/187 , G11B5/31 , G11B5/39 , G11B5/667 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/14 , H01F10/32 , H01F17/00 , H01F41/30 , H01F10/10
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/1878 , G11B5/3109 , G11B5/3903 , G11B5/3906 , H01F10/002 , H01F10/08 , H01F10/13 , H01F10/138 , H01F10/147 , H01F10/3204 , H01F10/3254 , H01F17/0033 , H01F41/302 , Y10S428/90 , Y10T428/115
摘要： The invention is embodied in a soft magnetic thin film article comprising an iron-chromium-nitrogen (Fe--Cr--N) based alloy and methods for making such article. The soft magnetic thin film article is formed using an iron-chromium-nitrogen based alloy with tantalum in one embodiment and with at least one of the elements titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), molybdenum (Mo), niobium (Nb) or tungsten (W) in another embodiment. The article is formed such that the alloy has a relatively high saturation magnetization (e.g., greater than approximately 15 kG) and a relatively low coercivity (e.g., less than approximately 2.0 oersteds) in an as-deposited condition or, alternatively, with a very low temperature treatment (e.g., below approximately 150.degree. C). The inventive films are suitable for use in electromagnetic devices, for example, in microtransformer cores, inductor cores and in magnetic read-write heads.
摘要翻译： 本发明体现在包含铁 - 铬 - 氮（Fe-Cr-N）基合金的软磁薄膜制品和制造这种制品的方法中。 在一个实施方案中，使用具有钽的铁 - 铬 - 氮基合金与所述软磁性薄膜制品形成钛（Ti），锆（Zr），铪（Hf），钒（V）， 钼（Mo），铌（Nb）或钨（W）。 制品形成为使得合金在沉积条件下具有相对高的饱和磁化强度（例如，大于约15kG）和相对较低的矫顽力（例如，小于约2.0奥斯特），或者替代地， 低温处理（如低于约150℃）。 本发明的膜适用于电磁装置，例如在微型变压器芯，电感芯和磁读写头中。
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3.发明授权
公开(公告)号：US5998048A
公开(公告)日：1999-12-07
申请号：US33204
申请日：1998-03-02
申请人： Sungho Jin , Timothy J. Klemmer , Thomas Henry Tiefel, deceased , Robert Bruce Van Dover , Wei Zhu
发明人： Sungho Jin , Timothy J. Klemmer , Thomas Henry Tiefel, deceased , Robert Bruce Van Dover , Wei Zhu
CPC分类号： H01F10/132 , G11B5/3109 , G11B5/39 , G11B5/3903 , H01F10/138 , H01F10/265 , Y10S428/90
摘要： The invention is embodied in an anisotropic, soft magnetic thin film article comprising a cobalt-iron-chromium-nitrogen (Co--Fe--Cr--N) alloy. The thin film is formed such that the alloy has a relatively high saturation magnetization (4.pi.M.sub.s), e.g., greater than approximately 8 kilogauss (kG), a relatively low coercivity (H.sub.c), e.g., less than approximately 2.0 oersteds (Oe), a relatively high squareness ratio (M.sub.r /M.sub.s), e.g., greater than approximately 0.90, and a relatively high anisotropy field (H.sub.k), e.g., greater than approximately 20 Oe, in an as-deposited condition or, alternatively, with a relatively low temperature treatment, e.g., below approximately 300.degree. Celsius. The inventive films are suitable for use in electromagnetic devices, e.g., in microtransformer cores, inductor cores and in magnetic read-write heads.
摘要翻译： 本发明体现在包含钴 - 铁 - 铬 - 氮（Co-Fe-Cr-N）合金的各向异性软磁薄膜制品中。 形成薄膜使得合金具有相对高的饱和磁化强度（4πMs），例如大于约8千兆（kG），较低的矫顽力（Hc），例如小于约2.0奥斯特（Oe） ，相对高的矩形比（Mr / Ms），例如，大于约0.90，以及比较高的各向异性场（Hk），例如大于约20Oe，或者相对于 低温处理，例如低于约300℃。 本发明的膜适用于电磁装置，例如在微型变压器芯，电感芯和磁读写头中。
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公开(公告)号：US5976715A
公开(公告)日：1999-11-02
申请号：US965682
申请日：1997-11-06
申请人： Li-Han Chen , Sungho Jin , Wei Zhu , Robert Bruce van Dover
发明人： Li-Han Chen , Sungho Jin , Wei Zhu , Robert Bruce van Dover
IPC分类号： C22C38/00 , C22C38/26 , C22C38/28 , G11B5/127 , G11B5/187 , G11B5/31 , G11B5/39 , G11B5/667 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/14 , H01F10/32 , H01F17/00 , H01F41/30 , G11B5/66
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/1878 , G11B5/3109 , G11B5/3903 , G11B5/3906 , H01F10/002 , H01F10/08 , H01F10/13 , H01F10/138 , H01F10/147 , H01F10/3204 , H01F10/3254 , H01F17/0033 , H01F41/302 , Y10S428/90 , Y10T428/115
摘要： The invention is embodied in a soft magnetic thin film article comprising an iron--chromium-nitrogen (Fe--Cr--N) based alloy and methods for making such article. The soft magnetic thin film article is formed using an iron--chromium--nitrogen based alloy with tantalum in one embodiment and with at least one of the elements titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), molybdenum (Mo), niobium (Nb) or tungsten (W) in another embodiment. The article is formed such that the alloy has a relatively high saturation magnetization (e.g., greater than approximately 15 kG) and a relatively low coercivity (e.g., less than approximately 2.0 oersteds) in an as-deposited condition or, alternatively, with a very low temperature treatment (e.g., below approximately 150.degree. C.). The inventive films are suitable for use in electromagnetic devices, for example, in microtransformer cores, inductor cores and in magnetic read-write heads.
摘要翻译： 本发明体现在包含铁 - 铬 - 氮（Fe-Cr-N）基合金的软磁薄膜制品和制造这种制品的方法中。 在一个实施方案中，使用具有钽的铁 - 铬 - 氮基合金与所述软磁性薄膜制品形成钛（Ti），锆（Zr），铪（Hf），钒（V）， 钼（Mo），铌（Nb）或钨（W）。 制品形成为使得合金在沉积条件下具有相对高的饱和磁化强度（例如，大于约15kG）和相对较低的矫顽力（例如，小于约2.0奥斯特），或者替代地， 低温处理（如低于约150℃）。 本发明的膜适用于电磁装置，例如在微型变压器芯，电感芯和磁读写头中。
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5.发明授权公开(公告)号：US06383923B1
公开(公告)日：2002-05-07
申请号：US09643784
申请日：2000-08-22
申请人： Walter L. Brown , Sungho Jin , Wei Zhu
发明人： Walter L. Brown , Sungho Jin , Wei Zhu
IPC分类号： H01L2144
CPC分类号： H01L24/11 , B82Y10/00 , H01L21/76885 , H01L23/49811 , H01L23/53276 , H01L24/13 , H01L51/0595 , H01L2224/11003 , H01L2224/111 , H01L2224/11334 , H01L2224/13193 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04953 , H01L2924/10329 , H01L2924/14 , H01L2924/15747 , H01L2924/351 , Y10S438/962 , Y10S977/762 , Y10S977/848 , H01L2924/00
摘要： A circuit device is disclosed comprising at least two circuit layers or circuit devices vertically interconnected with a plurality of parallel and substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires on a dissolvable or removable substrate, equalizing the length of the nanowires (e.g., so that each one of the plurality of nanowires is substantially equal in length), transferring and bonding exposed ends of the plurality of nanowires to a first circuit layer; and removing the dissolvable substrate. The nanowires attached to the first circuit layer then can be further bonded to a second circuit layer to provide the vertically interconnected circuit device.
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6.发明授权Process for fabricating article comprising aligned truncated carbon nanotubes 有权制造包含对准的截短碳纳米管的制品的方法公开(公告)号：US06283812B1
公开(公告)日：2001-09-04
申请号：US09236933
申请日：1999-01-25
申请人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： H01J902
CPC分类号： H01J9/025 , C01B32/168 , C01B2202/08 , C01B2202/22 , H01J1/304 , H01J2201/30469 , H01J2223/04 , Y02E60/325 , Y10S977/742 , Y10S977/743 , Y10S977/842 , Y10S977/89
摘要： The emission properties of aligned nanotube arrays are improved by truncating the ends of the nanotubes. Truncation provides nanotubes having a height within, for example, 30% of the average truncated nanotube height, as well as ends substantially free of end caps. The cap-free ends provide desirable field concentration, and the height uniformity increases the number of participating nanotubes.
摘要翻译： 通过截断纳米管的端部来改善排列的纳米管阵列的发射特性。 截断提供具有例如平均截短的纳米管高度的30％内的高度的纳米管，以及基本上没有端盖的端部。 无帽端提供期望的场浓度，并且高度均匀性增加参与纳米管的数量。
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公开(公告)号：US5808401A
公开(公告)日：1998-09-15
申请号：US548720
申请日：1995-10-26
申请人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
CPC分类号： H01J9/025 , H01J1/304 , H01J2201/30403 , H01J2201/30457 , H01J2329/8625
摘要： In accordance with the invention, a field emission device is made by disposing emitter material on an insulating substrate, applying masking particles to the emitter material, applying an insulating film and a gate conductor film over the masking particles and emitter material and removing the particles to reveal a random distribution of apertures to the emitter material. The result is a novel and economical field emission device having numerous randomly distributed emission apertures which can be used to make low cost flat panel displays.
摘要翻译： 根据本发明，通过将发射体材料设置在绝缘基板上，将掩模粒子施加到发射极材料，在掩模颗粒和发射体材料上施加绝缘膜和栅极导体膜，并将颗粒除去，制成场致发射器件 揭示孔径随机分布到发射体材料。 结果是一种新颖且经济的场致发射装置，其具有许多随机分布的发射孔，其可用于制造低成本的平板显示器。
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公开(公告)号：US5690530A
公开(公告)日：1997-11-25
申请号：US728254
申请日：1996-10-08
申请人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Sungho Jin , Gregory Peter Kochanski , Wei Zhu
CPC分类号： H01J29/028 , H01J31/123 , H01J9/185 , H01J2329/8625 , H01J2329/863 , H01J2329/8635 , H01J2329/864
摘要： In accordance with the invention, a field emission device is provided with an improved pillar structure comprising multi-layer pillars. The pillars have a geometric structure that traps most secondary electrons and an exposed surface that reduces the number of secondary electrons. Processing and assembly methods permit low-cost manufacturing of high breakdown-voltage devices, including flat panel displays.
摘要翻译： 根据本发明，场发射装置具有包括多层支柱的改进的支柱结构。 支柱具有捕获大多数二次电子的几何结构和减少二次电子数的暴露表面。 加工和组装方法允许低成本制造包括平板显示器在内的高击穿电压装置。
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公开(公告)号：US5665252A
公开(公告)日：1997-09-09
申请号：US501632
申请日：1995-07-12
申请人： Sungho Jin , Wei Zhu
发明人： Sungho Jin , Wei Zhu
IPC分类号： C04B41/53 , C04B41/91 , H01L21/306 , B29D11/00 , B29D25/00
CPC分类号： C04B41/009 , C04B41/5361 , C04B41/91 , H01L21/306
摘要： The method of shaping a polycrystalline diamond (PCD) body (exemplarily a wafer of CVD-PCD) utilizes our discovery that the rate and amount of diamond removal from a given region of a PCD body depends, for a given metal "etchant" at a given temperature, on the thickness of the etchant layer overlying the given region, with relatively larger etchant thickness being associated with relatively higher removal rate and amount. Exemplarily, the method can be used to substantially remove thickness variations and/or film curvature from as-produced PCD films. An exemplary metal that can be used in the practice of the invention is mischmetal. The metal etchant can be molten, partially molten or solid.
摘要翻译： 成型多晶金刚石（PCD）体（例如CVD-PCD的晶片）的方法利用我们的发现，从PCD体的给定区域去除金刚石的速率和量取决于给定的金属“蚀刻剂” 给定温度，覆盖给定区域的蚀刻剂层的厚度，相对较大的蚀刻剂厚度与相对较高的去除速率和量相关联。 示例性地，该方法可用于基本上从生产的PCD膜中去除厚度变化和/或膜弯曲。 可用于本发明实践中的示例性金属是混合稀土。 金属蚀刻剂可以熔融，部分熔融或固体。
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公开(公告)号：US5598056A
公开(公告)日：1997-01-28
申请号：US380774
申请日：1995-01-31
申请人： Sungho Jin , Gregory P. Kochanski , Wei Zhu
发明人： Sungho Jin , Gregory P. Kochanski , Wei Zhu
CPC分类号： H01J29/028 , H01J31/123 , H01J9/185 , H01J2329/8625 , H01J2329/863 , H01J2329/8635 , H01J2329/864
摘要： In accordance with the invention, a field emission device is provided with an improved pillar structure comprising multi-layer pillars. The pillars have a geometric structure that traps most secondary electrons and an exposed surface that reduces the number of secondary electrons. Processing and assembly methods permit low-cost manufacturing of high breakdown-voltage devices, including flat panel displays.
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