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1.发明授权Semiconductor devices based on optical transitions between quasibound energy levels 失效基于准能量级之间的光学转换的半导体器件
公开(公告)号：US5386126A
公开(公告)日：1995-01-31
申请号：US11010
申请日：1993-01-29
申请人： Gregory H. Henderson , Lawrence C. West , Thomas K. Gaylord , Charles W. Roberts , Elias N. Glytsis , Moses T. Asom
发明人： Gregory H. Henderson , Lawrence C. West , Thomas K. Gaylord , Charles W. Roberts , Elias N. Glytsis , Moses T. Asom
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/14 , H01S5/34 , H01S5/3401 , H01L33/105 , H01S5/3402 , H01S5/3415 , H01S5/3416 , H01S5/3419 , H01S5/3425 , Y10S977/712 , Y10S977/759 , Y10S977/761
摘要： A solid state, electronic, optical transition device includes a multiple-layer structure of semiconductor material which supports substantially ballistic electron/hole transport at energies above/below the conduction/valance band edge. The multiple layer structure of semiconductor material includes a Fabry-Perot filter element for admitting electrons/holes at a first quasibound energy level above/below the conduction/valance band edge, and for depleting electrons/holes at a second quasibound energy level which is lower/higher than the first energy level. Such an arrangement allows common semiconductor material to be used to produce emitters and detectors and other devices which can operate at any of selected frequencies over a wide range of frequencies.
摘要翻译： 固体，电子，光学转换装置包括半导体材料的多层结构，其在高于/低于导电/价带边缘的能量下支撑基本上弹道的电子/空穴传输。 半导体材料的多层结构包括法布里 - 珀罗滤波器元件，用于在导电/价带边缘之上/之下的第一准能量级允许电子/空穴，并且用于在较低的第二准能级下耗尽电子/空穴 /高于第一能级。 这种布置允许常见的半导体材料用于产生发射器和检测器以及可在宽频率范围内以任何选定频率工作的其它器件。
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公开(公告)号：US07072534B2
公开(公告)日：2006-07-04
申请号：US10280505
申请日：2002-10-25
申请人： Claes Björkman , Lawrence C. West , Dan Maydan , Samuel Broydo
发明人： Claes Björkman , Lawrence C. West , Dan Maydan , Samuel Broydo
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/12 , G02B6/30 , G02B6/4214 , G02B6/4245 , G02B6/4257 , G02B6/4274 , G02B6/4283 , G02B6/43
摘要： An article of manufacture comprising an optical ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer has a top surface and is laterally divided into two regions including a first region and a second region, the top surface of the first region being of a quality that is sufficient to permit microelectronic circuitry to be formed therein and the second region including an optical signal distribution circuit formed therein, the optical signal distribution circuit made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuit to be fabricated in the first region of the second semiconductor layer.
摘要翻译： 一种制品，包括由第一半导体层制成的光学就绪衬底，在第一半导体层的顶部上的绝缘层和在绝缘层的顶部上的第二半导体层，其中第二半导体层具有顶表面，并且是 横向分为包括第一区域和第二区域的两个区域，第一区域的顶表面的质量足以允许在其中形成微电子电路，并且第二区域包括其中形成的光信号分配电路， 光信号分配电路由互连的半导体光子元件组成，并被设计为向要在第二半导体层的第一区域中制造的微电子电路提供信号。
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公开(公告)号：US07869672B2
公开(公告)日：2011-01-11
申请号：US11771716
申请日：2007-06-29
CPC分类号： G02B6/4246 , G02B6/2931 , G02B6/2938
摘要： An optical assembly is formed with a silicon substrate having a first surface and a second surface confronting the first surface. A reflective coating is formed over the first surface. Multiple diffraction gratings are formed integrally within the second surface of the silicon substrate. An optical absorber is formed over the second surface between the diffraction gratings.
摘要翻译： 光学组件形成有具有与第一表面相对的第一表面和第二表面的硅衬底。 在第一表面上形成反射涂层。 多个衍射光栅一体地形成在硅衬底的第二表面内。 在衍射光栅之间的第二表面上形成光吸收体。
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公开(公告)号：US07528357B2
公开(公告)日：2009-05-05
申请号：US11407376
申请日：2006-04-19
IPC分类号： H03G3/20
CPC分类号： H01L27/144 , H03F3/08 , H03K5/1534 , H04B10/66
摘要： A circuit including: an optical detector for detecting an optical pulse and generating therefrom a current pulse on an output; a pulse detector circuit having an input electrically connected to the optical detector and having an output for outputting a detection pulse in response to detecting the current pulse on its input, said pulse detector circuit including: a resettable amplifier including an input for receiving the current pulse from the optical detector, a reset terminal for resetting the amplifier after the amplifier detects the current pulse on its input, and an output for outputting a signal from which the detection pulse is derived; and a reset delay chain feeding back to the reset terminal of the resettable amplifier a feedback signal derived from the output signal of the resettable amplifier.
摘要翻译： 一种电路，包括：光检测器，用于检测光脉冲并产生输出上的电流脉冲; 脉冲检测器电路，其具有电连接到所述光学检测器的输入端，并具有用于响应于检测其输入上的电流脉冲而输出检测脉冲的输出，所述脉冲检测器电路包括：可复位放大器，包括用于接收电流脉冲的输入 来自光检测器的复位端子，用于在放大器检测到其输入上的电流脉冲之后复位放大器，以及用于输出用于输出检测脉冲的信号的输出; 以及复位延迟链，其将可重置放大器的输出信号导出的反馈信号反馈到可复位放大器的复位端。
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公开(公告)号：US20080124084A1
公开(公告)日：2008-05-29
申请号：US11771716
申请日：2007-06-29
IPC分类号： H04J14/02
CPC分类号： G02B6/4246 , G02B6/2931 , G02B6/2938
摘要： An optical assembly is formed with a silicon substrate having a first surface and a second surface confronting the first surface. A reflective coating is formed over the first surface. Multiple diffraction gratings are formed integrally within the second surface of the silicon substrate. An optical absorber is formed over the second surface between the diffraction gratings.
摘要翻译： 光学组件形成有具有与第一表面相对的第一表面和第二表面的硅衬底。 在第一表面上形成反射涂层。 多个衍射光栅一体地形成在硅衬底的第二表面内。 在衍射光栅之间的第二表面上形成光吸收体。
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公开(公告)号：US07151881B2
公开(公告)日：2006-12-19
申请号：US10856127
申请日：2004-05-28
IPC分类号： G02B6/10
CPC分类号： G02B6/42 , G02B6/136 , G02B2006/12123 , H01L31/02327 , H01L31/0312 , H01L31/09 , H01L31/105 , H01L31/1105 , H01L31/1812 , Y02E10/50
摘要： An optical circuit including a semiconductor substrate; an optical waveguide formed in or on the substrate; and an optical detector formed in or on the semiconductor substrate, wherein the optical detector is aligned with the optical waveguide so as to receive an optical signal from the optical waveguide during operation, and wherein the optical detector has: a first electrode; a second electrode; and an intermediate layer between the first and second electrodes, the intermediate layer being made of a semiconductor material characterized by a conduction band, a valence band, and deep level energy states introduced between the conduction and valence bands.
摘要翻译： 一种包括半导体衬底的光学电路; 形成在基板中或基板上的光波导; 以及形成在所述半导体衬底中或之上的光学检测器，其中所述光学检测器与所述光波导对准，以便在操作期间从所述光波导接收光信号，并且其中所述光学检测器具有：第一电极; 第二电极; 以及在所述第一和第二电极之间的中间层，所述中间层由导电带和导带之间引入的导带，价带和深能级状态的半导体材料制成。
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公开(公告)号：US07075165B2
公开(公告)日：2006-07-11
申请号：US10856750
申请日：2004-05-28
IPC分类号： H01L31/075
CPC分类号： G02B6/12004 , G02B2006/12061 , H01L31/0232 , H01L31/0288 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
摘要翻译： 一种制造检测器的方法，包括：在衬底中形成沟槽，所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中，所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层，第二层和第三层的部分，以产生上部基本平坦的表面，并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。
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公开(公告)号：US07001788B2
公开(公告)日：2006-02-21
申请号：US10858524
申请日：2004-05-28
IPC分类号： H01L21/00
CPC分类号： G02B6/12004 , G02B6/122 , G02B6/132 , G02B6/136 , G02B2006/121 , G02B2006/12104
摘要： A method of fabricating a waveguide mirror that involves etching a trench in a silicon substrate; depositing a film (e.g. silicon dioxide) over the surface of the silicon substrate and into the trench; ion etching the film to remove at least some of the deposited silicon dioxide and to leave a facet of film in inside corners of the trench; depositing a layer of SiGe over the substrate to fill up the trench; and planarizing the deposited SiGe to remove the SiGe from above the level of the trench.
摘要翻译： 一种制造波导反射镜的方法，涉及蚀刻硅衬底中的沟槽; 在硅衬底的表面上沉积膜（例如二氧化硅）并进入沟槽; 离子蚀刻膜以去除沉积的二氧化硅中的至少一些并且在沟槽的内部角落留下膜的小面; 在衬底上沉积一层SiGe以填充沟槽; 并且平坦化沉积的SiGe以从沟槽的高度上方除去SiGe。
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公开(公告)号：US07680376B2
公开(公告)日：2010-03-16
申请号：US11771642
申请日：2007-06-29
CPC分类号： G02B27/62
摘要： Methods are disclosed of fabricating an optical assembly. An active optical element is disposed near or on a first surface of a slab of optical material. A passive optical element is formed on a second surface of the slab, with the second surface being substantially parallel to the first surface. An optical axis of the passive optical element is aligned with an optical path between the passive optical element and an active region of the active optical element using a lithographic alignment process.
摘要翻译： 公开了制造光学组件的方法。 有源光学元件设置在光学材料板的第一表面附近或之上。 无源光学元件形成在板坯的第二表面上，第二表面基本上平行于第一表面。 使用光刻对准过程，无源光学元件的光轴与无源光学元件与有源光学元件的有源区域之间的光路对准。
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公开(公告)号：US20090269878A1
公开(公告)日：2009-10-29
申请号：US12420558
申请日：2009-04-08
IPC分类号： H01L21/20
CPC分类号： G02B6/12004 , G02B2006/12061 , H01L31/0232 , H01L31/0288 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.
摘要翻译： 一种制造检测器的方法，包括：在衬底中形成沟槽，所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中，所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层，第二层和第三层的部分，以产生上部基本平坦的表面，并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。
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