GALVANIC BATH
    1.
    发明申请
    GALVANIC BATH 审中-公开
    气味浴

    公开(公告)号:US20160194775A1

    公开(公告)日:2016-07-07

    申请号:US14911442

    申请日:2014-07-15

    申请人: HARTING KGaA

    IPC分类号: C25D3/56 C25D7/00

    CPC分类号: C25D3/562 C25D3/56 C25D7/00

    摘要: The invention relates to a galvanic bath for depositing a nickel-molybdenum alloy which consists of an aqueous solution of amine complexes and/or ammonium complexes in each case of nickel and/or molybdenum, the galvanic bath containing citric acid and/or citrate ions and/or oxidation products of the citric acid and/or the citrates, and molybdenum being present in different oxidation stages, in particular as Mo(V) and Mo(VI), in the galvanic bath.

    摘要翻译: 本发明涉及一种用于沉积镍 - 钼合金的电镀浴,其由镍和/或钼的每种情况由胺络合物和/或铵络合物的水溶液组成,所述电镀浴含有柠檬酸和/或柠檬酸根离子, /或柠檬酸和/或柠檬酸盐的氧化产物,钼存在于不同氧化阶段,特别是作为Mo(V)和Mo(VI)存在于电镀浴中。

    CONTACT ELEMENT WITH GOLD COATING
    2.
    发明申请
    CONTACT ELEMENT WITH GOLD COATING 审中-公开
    接触元件与镀金

    公开(公告)号:US20160168741A1

    公开(公告)日:2016-06-16

    申请号:US14904926

    申请日:2014-07-04

    申请人: HARTING KGAA

    摘要: The invention relates to a method for producing an electric contact element, the base of the contact element being made of a metal substrate which undergoes the following method steps in the listed order: a. a cold and/or hot and/or electrolytic degreasing of the substrate, b. an activation of the surface of the substrate i. in a nickel strike bath or ii. in a fluoride-containing activation solution or iii. in a fluoride-free activation solution, c. a galvanic deposition of an intermediate layer i., wherein a galvanically deposited nickel layer or ii. a nickel alloy layer, or iii. a copper alloy layer is applied as the intermediate layer, and d. an electrolytic deposition of a gold alloy layer in a direct and/or pulse current method in which the current density ranges from 0.3 to 0.6 A/dm2.

    摘要翻译: 本发明涉及一种用于制造电接触元件的方法,该接触元件的基底由金属基底制成,其按以下顺序进行以下方法步骤:a。 b)基材的冷和/或热和/或电解脱脂,b。 基板表面的激活i。 在镍罢工浴或ii。 在含氟化物的活化溶液中或iii。 在无氟化物的活化溶液中,c。 中间层i的电沉积,其中电镀镍层或ii。 镍合金层,或iii。 应用铜合金层作为中间层,d。 电流密度范围为0.3〜0.6A / dm 2的直接和/或脉冲电流法中的金合金层的电解沉积。