INSULATED SENSORS
    6.
    发明申请
    INSULATED SENSORS 审中-公开

    公开(公告)号:US20190285564A1

    公开(公告)日:2019-09-19

    申请号:US16319026

    申请日:2016-10-05

    Abstract: The present disclosure is drawn to an insulated sensor including a silicon substrate with active circuitry on a surface thereof, an electrode disposed on the silicon substrate, a passivation layer having a thickness from greater than 500 Angstroms to 3,000 Angstroms disposed on the active circuitry, and an electrode insulating layer having a thickness from 10 Angstroms to 500 Angstroms disposed on the electrode.

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