公开(公告)号：US20170307532A1

公开(公告)日：2017-10-26

申请号：US15518341

申请日：2014-10-16

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michiru FUJIOKA ,  Tsuyoshi SONEHARA ,  Naoshi ITABASHI

IPC: G01N21/65 ,  G11B23/03 ,  G01N33/487 ,  G11B7/08 ,  G01Q60/22 ,  G11B7/1387 ,  G11B7/085 ,  G11B7/22

CPC classification number: G01N21/658 ,  G01N21/6458 ,  G01N21/65 ,  G01N33/48721 ,  G01Q60/22 ,  G11B7/08 ,  G11B7/08576 ,  G11B7/1387 ,  G11B7/22 ,  G11B23/0318

Abstract: The purpose of the present invention is to control, with a simple structure and high accuracy, irradiation of excitation light to a multi-nanopore substrate without interrupting a measurement. Irradiation of excitation light is performed concurrently to at least one nanopore and at least one reference object on a substrate mounted in an observation container 103. A position irradiated with the excitation light in a measurement sample is calculated on the basis of a signal generated from the reference object detected by a detector 109, and the measurement and a fixed position control is performed concurrently by performing measurement of the measurement object while a drive control part 115 controlling the position of the irradiation of the excitation light to the measurement sample on the basis of the calculation result, whereby an analysis of the measurement sample can be performed in a short time.

公开(公告)号：US20170138899A1

公开(公告)日：2017-05-18

申请号：US15129854

申请日：2015-03-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Naoshi ITABASHI ,  Sonoko MIGITAKA ,  Itaru YANAGI ,  Rena AKAHORI ,  Kenichi TAKEDA

IPC: G01N27/447 ,  G01N21/65 ,  G01N33/487 ,  G01N21/64

CPC classification number: G01N27/44721 ,  B82Y40/00 ,  G01N21/648 ,  G01N21/6486 ,  G01N21/658 ,  G01N27/44791 ,  G01N33/48721

Abstract: While an insulating film having a near-field light generating element placed thereon is being irradiated with light in an electrolytic solution, or after the film that has been irradiated with light is disposed in the electrolytic solution, a first voltage is applied between the two electrodes installed in the electrolytic solution across the film, a second voltage is then applied between the two electrodes, and a value of a current that flows between the two electrodes due to the application of the second voltage is detected. This procedure is stopped when the current value reaches or exceeds a pre-set threshold value, whereby a hole is formed at a desired location in the thin-film.

公开(公告)号：US20140116621A1

公开(公告)日：2014-05-01

申请号：US14033338

申请日：2013-09-20

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masahito MORI ,  Naoyuki KOFUJI ,  Naoshi ITABASHI

IPC: H01J37/32

CPC classification number: H01J37/32798 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/517

Abstract: The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

Abstract translation: 本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。 等离子体处理装置包括真空反应器107，放置在真空反应器的处理室内的下部电极113，并且具有要在其上表面上安装的晶片112的偏压供给单元118和120，用于向 向下电极113形成偏置电位，用于将反应性气体供给到处理室中的气体供给装置111，用于在处理室中提供用于产生等离子体的磁场的电场供给装置101至103，以及控制单元127 用于控制通过高频功率入射在晶片112上的等离子体中的离子能量的分布。

公开(公告)号：US20170260573A1

公开(公告)日：2017-09-14

申请号：US15529122

申请日：2015-10-07

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Naoshi ITABASHI ,  Sonoko MIGITAKA ,  Masatoshi NARAHARA ,  Tomohiro SHOJI ,  Yukio ONO

IPC: C12Q1/68

CPC classification number: C12Q1/6809 ,  B01J19/0046 ,  B01J2219/00421 ,  B01J2219/00466 ,  B01J2219/00621 ,  B01J2219/00648 ,  B01J2219/00659 ,  B01J2219/00722 ,  B32B27/32 ,  C08G77/50 ,  C12Q1/6806 ,  C12Q1/6874 ,  G01N2035/00237 ,  G01N2035/1034

Abstract: In order to reduce the cost of producing a spot array substrate and reduce the cost of nucleic acid polymer analysis, a spot array substrate is used which is produced by preparing a resin substrate 402 having a surface on which an uneven pattern is formed and a plurality of bead sitting positions set in a two-dimensional array within the uneven pattern, and loading surface-modified beads onto the bead sitting positions of the resin substrate.

公开(公告)号：US20150362458A1

公开(公告)日：2015-12-17

申请号：US14759596

申请日：2013-11-18

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshimitsu YANAGAWA ,  Takahide YOKOI ,  Naoshi ITABASHI ,  Takayuki KAWAHARA ,  Sonoko MIGITAKA ,  Makiko YOSHIDA ,  Takamichi MURAMATSU

IPC: G01N27/414

Abstract: Provided is a biomolecule measuring device capable of effectively reducing measurement noise occurring when measuring a biomolecule sample using a semiconductor sensor. This biomolecule measuring device generates a trigger to react a sample with a reagent after starting to send the reagent onto the semiconductor sensor that detects ion concentration (see FIG. 7).

Abstract translation: 提供了一种生物分子测量装置，其能够有效地减少使用半导体传感器测量生物分子样品时发生的测量噪声。 该生物分子测量装置在开始将试剂发送到检测离子浓度的半导体传感器上之后，产生使试样与试剂反应的触发（参见图7）。

公开(公告)号：US20150348763A1

公开(公告)日：2015-12-03

申请号：US14727265

申请日：2015-06-01

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masahito MORI ,  Naoyuki KOFUJI ,  Naoshi ITABASHI

IPC: H01J37/32

CPC classification number: H01J37/32798 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/517

Abstract: The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor, a lower electrode placed within a processing chamber of the vacuum reactor and having a wafer to be etched mounted on the upper surface thereof, bias supplying units and for supplying high frequency power for forming a bias potential to the lower electrode, a gas supply means for feeding reactive gas into the processing chamber, an electric field supplying means through for supplying a magnetic field for generating plasma in the processing chamber, and a control unit for controlling the distribution of ion energy in the plasma being incident on the wafer via the high frequency power.

Abstract translation: 本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。 等离子体处理装置包括真空反应器，放置在真空反应器的处理室内的下电极，并且其上表面具有要蚀刻的晶片，偏压供应单元和用于提供用于形成偏置电位的高频功率 下电极，用于将反应性气体供给到处理室中的气体供给装置，用于在处理室中提供用于产生等离子体的磁场的电场供给装置，以及用于控制等离子体中的离子能分布的控制单元 通过高频功率入射到晶片上。