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1.发明授权公开(公告)号：US10163625B2
公开(公告)日：2018-12-25
申请号：US15386859
申请日：2016-12-21
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/02 , C23C16/02 , C23C16/34 , C23C16/455 , C23C16/52 , H01L21/306 , H01L21/308 , C23C16/56
摘要： There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.
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2.发明授权公开(公告)号：US10121654B2
公开(公告)日：2018-11-06
申请号：US15386859
申请日：2016-12-21
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/02 , C23C16/02 , C23C16/34 , C23C16/455 , C23C16/52 , H01L21/306 , H01L21/308 , C23C16/56
摘要： There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.
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公开(公告)号：USD739831S1
公开(公告)日：2015-09-29
申请号：US29467533
申请日：2013-09-20
设计人： Kosuke Takagi , Kiyohiko Maeda , Yuji Urano , Naoki Matsumoto , Yasuaki Komae
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公开(公告)号：US09666430B2
公开(公告)日：2017-05-30
申请号：US14597372
申请日：2015-01-15
发明人： Yasunobu Koshi , Keigo Nishida , Kiyohiko Maeda
CPC分类号： H01L21/02592 , C23C16/0236 , C23C16/24 , C23C16/45523 , C23C16/45544 , C23C16/52 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.
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5.发明授权Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium 有权制造半导体器件的方法，衬底处理方法，衬底处理设备和记录介质公开(公告)号：US09177786B2
公开(公告)日：2015-11-03
申请号：US13845781
申请日：2013-03-18
发明人： Atsushi Sano , Yoshiro Hirose , Kiyohiko Maeda , Kazuyuki Okuda , Ryuji Yamamoto
IPC分类号： H01L21/31 , H01L21/02 , C23C16/34 , C23C16/452 , C23C16/455
CPC分类号： H01L21/02247 , C23C16/34 , C23C16/345 , C23C16/452 , C23C16/45542 , C23C16/45546 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228
摘要： A method of manufacturing a semiconductor device includes forming a thin film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a source gas to the substrate, and supplying excited species from each of a plurality of excitation units provided at a side of the substrate to the substrate. Each of the plurality of excitation units generates the excited species by plasma-exciting a reaction gas. In supplying the excited species from each of the plurality of excitation units, an in-plane distribution of the excited species supplied from at least one of the plurality of excitation units in the substrate differs from an in-plane distribution of the excited species supplied from another excitation unit, other than the at least one excitation unit, among the plurality of excitation units, in the substrate.
摘要翻译： 制造半导体器件的方法包括通过执行预定次数的周期在衬底上形成薄膜。 该循环包括将源气体供应到基板，并将设置在基板一侧的多个激励单元中的每一个的激发物质供应到基板。 多个激发单元中的每一个通过等离子体激发反应气体来产生激发的物质。 在从多个激发单元中的每个激发单元提供激发的物质时，从衬底中的多个激发单元中的至少一个提供的激发物质的面内分布不同于从 在所述基板中的所述多个激励单元之中的除所述至少一个激励单元之外的另一激励单元。
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公开(公告)号：US20130305991A1
公开(公告)日：2013-11-21
申请号：US13948760
申请日：2013-07-23
IPC分类号： H01L21/02
CPC分类号： H01L21/02532 , C23C16/24 , C23C16/4583 , H01L21/02381 , H01L21/02587 , H01L21/0262 , H01L21/02636 , H01L21/67781
摘要： A method of manufacturing a semiconductor device includes conveying a first substrate provided with an opposing surface having insulator regions and a semiconductor region exposed between the insulator regions and a second substrate provided with an insulator surface exposed toward the opposing surface of the first substrate, into a process chamber in a state that the second substrate is arranged in to face the opposing surface of the first substrate, and selectively forming a silicon-containing film with a flat surface at least on the semiconductor region of the opposing surface of the first substrate by heating an inside of the process chamber and supplying at least a silicon-containing gas and a chlorine-containing gas into the process chamber.
摘要翻译： 一种制造半导体器件的方法包括：传送具有绝缘体区域的相对表面的第一基板和暴露在绝缘体区域之间的半导体区域和设置有朝向第一基板的相对表面暴露的绝缘体表面的第二基板， 处理室，其处于第二基板布置成面对第一基板的相对表面的状态，并且通过加热至少在第一基板的相对表面的半导体区域上选择性地形成具有平坦表面的含硅膜 处理室的内部，并且至少将含硅气体和含氯气体供应到处理室中。
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公开(公告)号：US09349587B2
公开(公告)日：2016-05-24
申请号：US14044358
申请日：2013-10-02
发明人： Yoshiro Hirose , Atsushi Sano , Kazuyuki Okuda , Kiyohiko Maeda
IPC分类号： H01L21/31 , H01L21/02 , C23C16/34 , C23C16/455 , H01L21/311
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45534 , C23C16/45542 , C23C16/45546 , H01L21/02219 , H01L21/02266 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/31111
摘要： In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiH3Cl or MCS) gas to a substrate disposed in a processing chamber, (b) supplying a plasma-excited hydrogen-containing gas to the substrate disposed in the processing chamber, (c) supplying a plasma-excited or heat-excited nitrogen-containing gas to the substrate disposed in the processing chamber, (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate disposed in the processing chamber, and (e) performing a cycle including the steps (a) through (d) a predetermined number of times to form a silicon nitride film on the substrate.
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8.发明授权公开(公告)号：US10229829B2
公开(公告)日：2019-03-12
申请号：US15950879
申请日：2018-04-11
IPC分类号： H01L21/02 , C23C16/455 , C23C16/56 , H01L21/308 , H01L21/306 , C23C16/52 , C23C16/02 , C23C16/34
摘要： There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.
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9.发明授权公开(公告)号：US09793107B2
公开(公告)日：2017-10-17
申请号：US14227809
申请日：2014-03-27
IPC分类号： C23C16/00 , H01L21/02 , C23C16/52 , C23C16/455 , C23C16/44 , H01J37/32 , C23C16/36 , C23C16/40
CPC分类号： H01L21/02126 , C23C16/36 , C23C16/401 , C23C16/4412 , C23C16/45523 , C23C16/45531 , C23C16/45534 , C23C16/45553 , C23C16/45561 , C23C16/45578 , C23C16/52 , H01J37/32449 , H01J37/32559 , H01L21/02211 , H01L21/0228 , H01L21/02321 , H01L21/02329 , H01L21/02332 , H01L21/02337 , H01L21/0234
摘要： A method of manufacturing a semiconductor device, includes: forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.
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10.发明授权公开(公告)号：US09698007B2
公开(公告)日：2017-07-04
申请号：US14807670
申请日：2015-07-23
IPC分类号： C23C16/00 , H01L21/02 , C23C16/52 , C23C16/455 , C23C16/44 , H01J37/32 , C23C16/36 , C23C16/40
CPC分类号： H01L21/02126 , C23C16/36 , C23C16/401 , C23C16/4412 , C23C16/45523 , C23C16/45531 , C23C16/45534 , C23C16/45553 , C23C16/45561 , C23C16/45578 , C23C16/52 , H01J37/32449 , H01J37/32559 , H01L21/02211 , H01L21/0228 , H01L21/02321 , H01L21/02329 , H01L21/02332 , H01L21/02337 , H01L21/0234
摘要： A method of manufacturing a semiconductor device, includes forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.
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