CMOS circuit for implementing Boolean functions
    1.
    发明授权
    CMOS circuit for implementing Boolean functions 失效
    用于实现布尔函数的CMOS电路

    公开(公告)号:US5455528A

    公开(公告)日:1995-10-03

    申请号:US152764

    申请日:1993-11-15

    CPC分类号: H03K19/0963 H03K19/0013

    摘要: A first transistor is connected to a second transistor so that the first and second transistors may be initially biased in a non-conducting state when a first node is at a first voltage potential and a second node is at a second voltage potential. A potential altering circuit selectively alters the voltage potential at the first and second nodes, causes the first and second transistors to be in a conducting state for accelerating a voltage transistion at the first and second nodes toward final values, and maintains the first and second nodes at their final voltage potentials for implementing a desired Boolean function. The biasing circuit is connected to facilitate turning off the first and second transistors when the circuit is being reset for subsequent Boolean evaluations. More specifically, the biasing circuit inhibits current flow through the first and second transistors during a precharge operation to prevent excessive power consumption. The circuit according to the present invention may be employed in a number of logic applications such as simple OR/NOR or AND/NAND circuits, generalized parallel/serial logic networks, comparators, etc.. When employed in a chain, such as in a generalized parallel/serial logic network, NMOS circuit elements may be employed together with gate coupling circuitry to ensure high speed operation with minimum size.

    摘要翻译: 第一晶体管连接到第二晶体管,使得当第一节点处于第一电压电位且第二节点处于第二电压电位时,第一和第二晶体管可以被初始偏置为非导通状态。 电位改变电路选择性地改变第一和第二节点处的电压电位,使得第一和第二晶体管处于导通状态,以将第一和第二节点处的电压转移加速到最终值,并且维持第一和第二节点 在其最终电压电位用于实现所需的布尔函数。 当偏置电路被复位以便随后的布尔评估时,偏置电路被连接以便于关闭第一和第二晶体管。 更具体地,偏置电路在预充电操作期间阻止电流流过第一和第二晶体管以防止过多的功率消耗。 根据本发明的电路可以用于许多逻辑应用中,例如简单的OR / NOR或AND / NAND电路,广义并行/串行逻辑网络,比较器等。当在链中使用时,例如在 通用并行/串行逻辑网络,NMOS电路元件可与栅极耦合电路一起使用,以确保以最小尺寸进行高速运行。

    Latching method
    2.
    发明授权
    Latching method 失效
    锁定方法

    公开(公告)号:US5990717A

    公开(公告)日:1999-11-23

    申请号:US037198

    申请日:1998-03-09

    IPC分类号: H03K3/356

    CPC分类号: H03K3/356121

    摘要: A high-performance flip-flop circuit implementation. The flip-flop circuit comprises an "implicit" one-shot to generate a delayed clock output (407). The flip-flop comprises a delay block (405) coupled to a clock input (210). The flip-flop may be a D-type flip-flop. In a positive-edge-triggered embodiment of the flip-flop, a falling edge (540) of the delayed clock output (407) follows a rising edge (544) of a clock signal after a delay period (548). The flip-flop clocks in new data at a data input (205) in response to the clock input (210) during this delay period (548). Data is held in a storage block (450). The flip-flop has extremely good transient characteristics, especially set-up and clock-to-output times. The flip-flop consumes no static power.

    摘要翻译: 高性能触发电路实现。 触发器电路包括“隐式”单触发以产生延迟的时钟输出(407)。 触发器包括耦合到时钟输入(210)的延迟块(405)。 触发器可以是D型触发器。 在触发器的正边沿触发实施例中,延迟时钟输出(407)的下降沿(540)在延迟时段(548)之后的时钟信号的上升沿(544)之后。 触发器响应于在该延迟时段(548)期间的时钟输入(210)在数据输入端(205)处的新数据中的时钟。 数据保存在存储块(450)中。 触发器具有非常好的瞬态特性,特别是设置和时钟到输出时间。 触发器不消耗静电。

    Dynamic CMOS logic circuit with precharge
    3.
    发明授权
    Dynamic CMOS logic circuit with precharge 失效
    具有预充电的动态CMOS逻辑电路

    公开(公告)号:US5508640A

    公开(公告)日:1996-04-16

    申请号:US121136

    申请日:1993-09-14

    IPC分类号: H03K19/017 H03K19/0948

    CPC分类号: H03K19/01707 H03K19/0948

    摘要: A first transistor is connected to a second transistor so that the first and second transistors may be initially biased in a non-conducting state when a first node is at a first voltage potential and a second node is at a second voltage potential. A potential altering circuit selectively alters the voltage potential at the first and second nodes, causes the first and second transistors to be in a conducting state for accelerating a voltage transistion at the first and second nodes toward final values, and maintains the first and second nodes at their final voltage potentials for implementing a desired Boolean function.

    摘要翻译: 第一晶体管连接到第二晶体管,使得当第一节点处于第一电压电位且第二节点处于第二电压电位时,第一和第二晶体管可以被初始偏置为非导通状态。 电位改变电路选择性地改变第一和第二节点处的电压电位,使得第一和第二晶体管处于导通状态,以将第一和第二节点处的电压转移加速到最终值,并且维持第一和第二节点 在其最终电压电位用于实现所需的布尔函数。

    Dynamic latch circuitry
    4.
    发明授权
    Dynamic latch circuitry 失效
    动态锁存电路

    公开(公告)号:US06087872A

    公开(公告)日:2000-07-11

    申请号:US28960

    申请日:1998-02-23

    IPC分类号: H03K3/12

    CPC分类号: H03K3/12

    摘要: A high-performance dynamic flip-flop circuit implementation. The dynamic flip-flop circuit comprises an "implicit" one-shot to generate a delayed clock output (319). The flip-flop comprises a delay block (317) coupled to a clock input (305). The flip-flop may be a D-type flip-flop. In a positive-edge-triggered embodiment of the flip-flop, a falling edge (440) of the delayed clock output (319) follows a rising edge (444) of a clock signal after a delay period (448). The flip-flop clocks in new data at a data input (305) in response to the clock input (310) during this delay period (448). Data is held in a storage block (360). The flip-flop has extremely good transient characteristics, especially set-up and clock-to-output times. The flip-flop consumes no static power.

    摘要翻译: 高性能动态触发电路实现。 动态触发器电路包括“隐式”单触发以产生延迟时钟输出(319)。 触发器包括耦合到时钟输入(305)的延迟块(317)。 触发器可以是D型触发器。 在触发器的正边沿触发实施例中,延迟时钟输出(319)的下降沿(440)在延迟时段(448)之后的时钟信号的上升沿(444)之后。 触发器响应于在该延迟时段(448)期间的时钟输入(310)在数据输入(305)处的新数据中进行时钟。 数据保存在存储块(360)中。 触发器具有非常好的瞬态特性,特别是设置和时钟到输出时间。 触发器不消耗静电。

    Latching methodology
    5.
    发明授权
    Latching methodology 失效
    闭锁方法

    公开(公告)号:US5774005A

    公开(公告)日:1998-06-30

    申请号:US706340

    申请日:1996-08-30

    IPC分类号: H03K3/356

    CPC分类号: H03K3/356121

    摘要: A high-performance flip-flop circuit implementation. The flip-flop circuit comprises an "implicit" one-shot to generate a delayed clock output (407). The flip-flop comprises a delay block (405) coupled to a clock input (210). The flip-flop may be a D-type flip-flop. In a positive-edge-triggered embodiment of the flip-flop, a falling edge (540) of the delayed clock output (407) follows a rising edge (544) of a clock signal after a delay period (548). The flip-flop clocks in new data at a data input (205) in response to the clock input (210) during this delay period (548). Data is held in a storage block (450). The flip-flop has extremely good transient characteristics, especially setup and clock-to-output times. The flip-flop consumes no static power.

    摘要翻译: 高性能触发电路实现。 触发器电路包括“隐式”单触发以产生延迟的时钟输出(407)。 触发器包括耦合到时钟输入(210)的延迟块(405)。 触发器可以是D型触发器。 在触发器的正边沿触发实施例中,延迟时钟输出(407)的下降沿(540)在延迟时段(548)之后的时钟信号的上升沿(544)之后。 触发器响应于在该延迟时段(548)期间的时钟输入(210)在数据输入端(205)处的新数据中的时钟。 数据保存在存储块(450)中。 触发器具有非常好的瞬态特性,特别是设置和时钟到输出时间。 触发器不消耗静电。

    Carry chain adder using regenerative push-pull differential logic
    6.
    发明授权
    Carry chain adder using regenerative push-pull differential logic 失效
    携带加法器使用再生推挽差分逻辑

    公开(公告)号:US5487025A

    公开(公告)日:1996-01-23

    申请号:US152561

    申请日:1993-11-15

    IPC分类号: G06F7/50 G06F7/503 H03K19/017

    摘要: A carry indicating circuit selectively generates a carry-in signal indicating whether the addition of a first plurality of bits results in a carry. A first carry chain circuit selectively generates a first carry-out signal indicating whether the addition of a second plurality of bits together with a carry from the addition of the first plurality of bits results in a carry, and a second carry chain circuit selectively generates a second carry-out signal indicating whether the addition of the second plurality of bits without a carry from the addition of the first plurality of bits results in a carry. Selection circuitry, coupled to the carry indicating circuit and to the first and second carry chain circuits, selects either the first carry-out signal or the second carry-out signal in response to the carry-in signal. The first and second carry chain circuits and/or the selection circuitry each includes a first transistor connected to a second transistor so that the first and second transistors may be initially biased in a nonconducting state when a first node is at a first voltage potential and a second node is at a second voltage potential, the first voltage potential being different from the second voltage potential. Altering circuitry is provided for altering the voltage potential at the first and second nodes for causing the first and second transistors to be in a conducting state and for accelerating the voltage at the first and second nodes to final voltage potentials.

    摘要翻译: 进位指示电路选择性地产生指示第一多个位的相加是否导致进位的进位信号。 第一进位链电路选择性地产生第一进位输出信号,该第一进位输出信号指示从第一多个位的相加中是否添加第二多个位与进位一起导致进位,并且第二进位链电路选择性地产生 指示是否从第一多个比特的添加中添加没有进位的第二多个比特导致携带。 耦合到进位指示电路和第一和第二进位链电路的选择电路响应于输入信号选择第一进位信号或第二进位输出信号。 第一和第二进位链电路和/或选择电路各自包括连接到第二晶体管的第一晶体管,使得当第一节点处于第一电压电位时,第一和第二进位链电路和/或选择电路可以被初始偏置为非导通状态, 第二节点处于第二电压电位,第一电压电位不同于第二电压电位。 提供改变电路用于改变第一和第二节点处的电压电位,以使第一和第二晶体管处于导通状态并用于将第一和第二节点处的电压加速到最终电压电位。

    Dynamic latching device
    7.
    发明授权
    Dynamic latching device 失效
    动态锁定装置

    公开(公告)号:US5764089A

    公开(公告)日:1998-06-09

    申请号:US706212

    申请日:1996-08-30

    IPC分类号: H03K3/037 H03K3/356

    CPC分类号: H03K3/356121 H03K3/037

    摘要: A high-performance dynamic flip-flop circuit implementation. The dynamic flip-flop circuit comprises an "implicit" one-shot to generate a delayed clock output (319). The flip-flop comprises a delay block (317) coupled to a clock input (305). The flip-flop may be a D-type flip-flop. In a positive-edge-triggered embodiment of the flip-flop, a falling edge (440) of the delayed clock output (319) follows a rising edge (444) of a clock signal after a delay period (448). The flip-flop clocks in new data at a data input (305) in response to the clock input (310) during this delay period (448). Data is held in a storage block (360). The flip-flop has extremely good transient characteristics, especially set-up and clock-to-output times. The flip-flop consumes no static power.

    摘要翻译: 高性能动态触发电路实现。 动态触发器电路包括“隐式”单触发以产生延迟时钟输出(319)。 触发器包括耦合到时钟输入(305)的延迟块(317)。 触发器可以是D型触发器。 在触发器的正边沿触发实施例中,延迟时钟输出(319)的下降沿(440)在延迟时段(448)之后的时钟信号的上升沿(444)之后。 触发器响应于在该延迟时段(448)期间的时钟输入(310)在数据输入(305)处的新数据中进行时钟。 数据保存在存储块(360)中。 触发器具有非常好的瞬态特性,特别是设置和时钟到输出时间。 触发器不消耗静电。

    High speed dynamic differential logic circuit employing capacitance
matching devices
    8.
    发明授权
    High speed dynamic differential logic circuit employing capacitance matching devices 失效
    采用电容匹配器件的高速动态差分逻辑电路

    公开(公告)号:US5959467A

    公开(公告)日:1999-09-28

    申请号:US938250

    申请日:1997-09-26

    摘要: The present invention discloses a differential logic circuit and sensing method providing differential sensing with greater speed and higher density than prior art techniques. One or more input signals are provided to a logic array and two output signals are produced from the logic array wherein one output signal of the logic array is a bit-line and one output signal of the logic array is a bit-bar-line as a reference signal, wherein both signals are provided as input signals to a differential sense amplifier having a binary output signal. The bit-line and the bit-bar-line are precharged to the same voltage level and a controlled input source-grounded transistor having less than fill drive strength is coupled to the bit-bar-line. A source-grounded transistor is coupled to each input signal of the logic array and is programmable to the bit-line by coupling the drain of the source-grounded transistor to the bit-line. A corresponding sourceless transistor, having a gate and a drain, but no source, is coupled to each input signal of the logic array and is programmable to the bit-bar-line by coupling the drain of the sourceless transistor to the bit-bar-line. The source-grounded transistors and the corresponding sourceless transistors are programmed identically providing substantially the same capacitance load on the bit-line and the bit-bar-line.

    摘要翻译: 本发明公开了一种差分逻辑电路和感测方法,其提供比现有技术更高的速度和更高密度的差分感测。 将一个或多个输入信号提供给逻辑阵列,并且从逻辑阵列产生两个输出信号,其中逻辑阵列的一个输出信号是位线,逻辑阵列的一个输出信号是位线,如 参考信号,其中两个信号作为输入信号提供给具有二进制输出信号的差分读出放大器。 位线和位线线被预充电到相同的电压电平,并且具有小于填充驱动强度的受控输入源极接地晶体管耦合到位线。 源极接地晶体管耦合到逻辑阵列的每个输入信号,并且通过将源极接地晶体管的漏极耦合到位线而可编程到位线。 具有栅极和漏极但没有源极的相应的无源晶体管被耦合到逻辑阵列的每个输入信号,并且可通过将无源晶体管的漏极耦合到位 - 线。 源极接地晶体管和相应的无源晶体管被编程相同地在位线和位线上提供基本相同的电容负载。

    Register-based redundancy circuit and method for built-in self-repair in
a semiconductor memory device
    10.
    发明授权
    Register-based redundancy circuit and method for built-in self-repair in a semiconductor memory device 失效
    基于寄存器的冗余电路和在半导体存储器件中内置自修复的方法

    公开(公告)号:US5920515A

    公开(公告)日:1999-07-06

    申请号:US938062

    申请日:1997-09-26

    IPC分类号: G11C29/00 G11C7/00

    CPC分类号: G11C29/84 G11C29/844

    摘要: A semiconductor memory array with Built-in Self-Repair (BISR) includes redundancy circuits associated with failed row address stores to drive redundant row word lines, thereby obviating the supply and normal decoding of a substitute addresses. NOT comparator logic compares a failed row address generated and stored by BISR circuits to a row address supplied to the memory array. A TRUE comparator configured in parallel with the NOT comparator simultaneously compares defective row address signal to the supplied row address. Since NOT comparison is performed quickly in dynamic logic without setup and hold time constraints, timing impact on a normal (non-redundant) row decode path is negligible, and since TRUE comparison, though potentially slower than NOT comparison, itself identifies a redundant row address and therefore need not employ an N-bit address to selected word-line decode, redundant row addressing is rapid and does not adversely degrade performance of a self-repaired semiconductor memory array. By providing redundancy handling at the predecode circuit level, rather than at a preliminary address substitution stage, access times to a BISR memory array in accordance with the present invention are improved.

    摘要翻译: 具有内置自修复(BISR)的半导体存储器阵列包括与故障行地址存储相关联的冗余电路以驱动冗余行字线,从而避免替代地址的供应和正常解码。 NOT比较器逻辑将由BISR电路生成和存储的故障行地址与提供给存储器阵列的行地址进行比较。 与NOT比较并行配置的TRUE比较器同时将缺陷行地址信号与提供的行地址进行比较。 由于在没有设置和保持时间约束的情况下,在动态逻辑中不快速执行比较,所以对正常(非冗余)行解码路径的定时影响是可以忽略的,并且由于真正的比较虽然潜在地比NOT比较慢,但是它自身识别冗余行地址 因此不需要对所选字线解码采用N位地址,冗余行寻址是快速的并且不会不利地降低自修复的半导体存储器阵列的性能。 通过在预解码电路级提供冗余处理,而不是在初始地址替换阶段,改进了根据本发明的BISR存储器阵列的访问时间。