公开(公告)号：US20130281342A1

公开(公告)日：2013-10-24

申请号：US13702511

申请日：2011-06-06

申请人： Helen Elizabeth Ambrosen ,  Mark Constantine ,  Margaret Joan Constantine ,  Noriko Miura ,  Jack Constantine

发明人： Helen Elizabeth Ambrosen ,  Mark Constantine ,  Margaret Joan Constantine ,  Noriko Miura ,  Jack Constantine

IPC分类号： A61K8/02 ,  A61Q19/10

CPC分类号： A61K8/0233 ,  A61K8/0237 ,  A61K8/19 ,  A61K8/365 ,  A61K8/463 ,  A61K2800/222 ,  A61Q19/10

摘要： A surfactant product includes a first effervescent material and a second effervescent material. Each effervescent material is capable of effervescence on contact with water, wherein the rate of effervescence of the first effervescent material is greater than the rate of effervescence of the second effervescent material. The first and second effervescent materials are distinct from each other and at least one of the effervescent materials envelops the other of the effervescent materials.

摘要翻译： 表面活性剂产品包括第一泡腾材料和第二泡腾材料。 每种泡腾材料能够与水接触时发泡，其中第一泡腾材料的起泡速率大于第二泡腾材料的泡腾速率。 第一和第二泡腾材料彼此不同，并且泡腾材料中的至少一种包封泡腾材料中的另一种。

公开(公告)号：US08697621B2

公开(公告)日：2014-04-15

申请号：US13702511

申请日：2011-06-06

申请人： Helen Elizabeth Ambrosen ,  Mark Constantine ,  Margaret Joan Constantine ,  Noriko Miura ,  Jack Contantine

发明人： Helen Elizabeth Ambrosen ,  Mark Constantine ,  Margaret Joan Constantine ,  Noriko Miura ,  Jack Contantine

IPC分类号： C11D3/10 ,  C11D7/26 ,  C11D7/60

CPC分类号： A61K8/0233 ,  A61K8/0237 ,  A61K8/19 ,  A61K8/365 ,  A61K8/463 ,  A61K2800/222 ,  A61Q19/10

摘要： A surfactant product includes a first effervescent material and a second effervescent material. Each effervescent material is capable of effervescence on contact with water, wherein the rate of effervescence of the first effervescent material is greater than the rate of effervescence of the second effervescent material. The first and second effervescent materials are distinct from each other and at least one of the effervescent materials envelops the other of the effervescent materials.

摘要翻译： 表面活性剂产品包括第一泡腾材料和第二泡腾材料。 每种泡腾材料能够与水接触时发泡，其中第一泡腾材料的起泡速率大于第二泡腾材料的泡腾速率。 第一和第二泡腾材料彼此不同，并且泡腾材料中的至少一种包封泡腾材料中的另一种。

公开(公告)号：US07602063B2

公开(公告)日：2009-10-13

申请号：US11172871

申请日：2005-07-05

申请人： Takeshi Furusawa ,  Noriko Miura ,  Kinya Goto ,  Masazumi Matsuura

发明人： Takeshi Furusawa ,  Noriko Miura ,  Kinya Goto ,  Masazumi Matsuura

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76802 ,  H01L21/02074 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： In a semiconductor having a multilayer wiring structure device on a semiconductor substrate, the multilayer wiring structure includes an interlayer insulating film having at least an organic siloxane insulating film. The organic siloxane insulating film has a relative dielectric constant of 3.1 or less, a hardness of 2.7 GPa or more, and a ratio of carbon atoms to silicon atoms between 0.5 and 1.0, inclusive. Further, the multilayer wiring structure may include an insulating layer having a ratio of carbon atoms to silicon atoms not greater than 0.1, the insulating layer being formed on the top surface of the organic siloxane insulating film as a result of carbon leaving the organic siloxane insulating film.

摘要翻译： 在半导体衬底上具有多层布线结构器件的半导体中，多层布线结构包括至少具有有机硅氧烷绝缘膜的层间绝缘膜。 有机硅氧烷绝缘膜的相对介电常数为3.1以下，硬度为2.7GPa以上，碳原子与硅原子的比例在0.5以上且1.0以下。 此外，多层布线结构可以包括碳原子与硅原子之比不大于0.1的绝缘层，绝缘层由有机硅氧烷绝缘膜的碳离子形成在有机硅氧烷绝缘膜的顶表面上 电影。

公开(公告)号：US07323781B2

公开(公告)日：2008-01-29

申请号：US10807222

申请日：2004-03-24

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。

公开(公告)号：US20060006530A1

公开(公告)日：2006-01-12

申请号：US11172871

申请日：2005-07-05

申请人： Takeshi Furusawa ,  Noriko Miura ,  Kinya Goto ,  Masazumi Matsuura

发明人： Takeshi Furusawa ,  Noriko Miura ,  Kinya Goto ,  Masazumi Matsuura

IPC分类号： H01L21/4763 ,  H01L23/48 ,  H01L21/26

CPC分类号： H01L21/76802 ,  H01L21/02074 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： In a semiconductor having a multilayer wiring structure device on a semiconductor substrate, the multilayer wiring structure includes an interlayer insulating film having at least an organic siloxane insulating film. The organic siloxane insulating film has a relative dielectric constant of 3.1 or less, a hardness of 2.7 GPa or more, and a ratio of carbon atoms to silicon atoms between 0.5 and 1.0, inclusive. Further, the multilayer wiring structure may include an insulating layer having a ratio of carbon atoms to silicon atoms not greater than 0.1, the insulating layer being formed on the top surface of the organic siloxane insulating film as a result of carbon leaving the organic siloxane insulating film.

公开(公告)号：US07777343B2

公开(公告)日：2010-08-17

申请号：US11449814

申请日：2006-06-09

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/52

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。

公开(公告)号：US20090263963A1

公开(公告)日：2009-10-22

申请号：US12493347

申请日：2009-06-29

申请人： Takeshi FURUSAWA ,  Noriko Miura ,  Kinya Goto ,  Masazumi Matsuura

发明人： Takeshi FURUSAWA ,  Noriko Miura ,  Kinya Goto ,  Masazumi Matsuura

IPC分类号： H01L21/768

CPC分类号： H01L21/76802 ,  H01L21/02074 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： In a semiconductor having a multilayer wiring structure device on a semiconductor substrate, the multilayer wiring structure includes an interlayer insulating film having at least an organic siloxane insulating film. The organic siloxane insulating film has a relative dielectric constant of 3.1 or less, a hardness of 2.7 GPa or more, and a ratio of carbon atoms to silicon atoms between 0.5 and 1.0, inclusive. Further, the multilayer wiring structure may include an insulating layer having a ratio of carbon atoms to silicon atoms not greater than 0.1, the insulating layer being formed on the top surface of the organic siloxane insulating film as a result of carbon leaving the organic siloxane insulating film.

摘要翻译： 在半导体衬底上具有多层布线结构器件的半导体中，多层布线结构包括至少具有有机硅氧烷绝缘膜的层间绝缘膜。 有机硅氧烷绝缘膜的相对介电常数为3.1以下，硬度为2.7GPa以上，碳原子与硅原子的比例在0.5以上且1.0以下。 此外，多层布线结构可以包括碳原子与硅原子之比不大于0.1的绝缘层，绝缘层由有机硅氧烷绝缘膜的碳离子形成在有机硅氧烷绝缘膜的顶表面上 电影。

公开(公告)号：US20090189245A1

公开(公告)日：2009-07-30

申请号：US12410170

申请日：2009-03-24

申请人： Takeshi FURUSAWA ,  Noriko Miura ,  Kinya Goto ,  Masazumi Matsuura

发明人： Takeshi FURUSAWA ,  Noriko Miura ,  Kinya Goto ,  Masazumi Matsuura

IPC分类号： H01L23/58

CPC分类号： H01L23/585 ,  H01L23/3192 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to the invention is a semiconductor device which includes a low dielectric constant film of which the relative dielectric constant is less than 3.5, is provided with one or more seal rings that are moisture blocking walls in closed loop form in a plan view, and where at least one of the seal rings includes a seal ring protrusion portion in inward protruding form in the vicinity of a chip corner.

摘要翻译： 根据本发明的半导体器件是一种半导体器件，其包括相对介电常数小于3.5的低介电常数膜，在平面图中设置有一个或多个密闭环，其为闭环形式的防潮壁 并且其中至少一个所述密封环包括在芯片角附近以向内突出形式的密封环突出部分。

公开(公告)号：US20060258149A1

公开(公告)日：2006-11-16

申请号：US11485976

申请日：2006-07-14

申请人： Tsuyoshi Tamaru ,  Kazutoshi Oomori ,  Noriko Miura ,  Hideo Aoki ,  Takayuki Oshima

发明人： Tsuyoshi Tamaru ,  Kazutoshi Oomori ,  Noriko Miura ,  Hideo Aoki ,  Takayuki Oshima

IPC分类号： H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/31608 ,  H01L21/31629 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor integrated circuit device is provided including forming a first insulating film comprised of fluorine-containing silicon oxide over a main surface of a semiconductor substrate is formed together with forming a second insulating film comprising silicon oxide as a major component, forming a third insulating film comprising silicon carbide as a major component, and forming a fourth insulating film comprised of fluorine-containing silicon oxide. The fourth insulating film is removed at a wiring groove-forming region thereof by dry etching using a first photoresist film as a mask. A first conductive layer is buried inside the wiring groove and the first conductive layer is removed from outside of the wiring groove by a chemical mechanical polishing method, thereby forming a first wiring including the first conductive layer inside the wiring groove.

摘要翻译： 提供一种制造半导体集成电路器件的方法，包括在半导体衬底的主表面上形成由含氟氧化硅构成的第一绝缘膜，同时形成包含氧化硅作为主要成分的第二绝缘膜，形成 以碳化硅为主要成分的第三绝缘膜，形成由含氟氧化硅构成的第四绝缘膜。 通过使用第一光致抗蚀剂膜作为掩模的干蚀刻在其布线槽形成区域处除去第四绝缘膜。 第一导电层被埋在布线槽内部，并且通过化学机械抛光方法从布线槽的外部去除第一导电层，从而在布线槽内形成包括第一导电层的第一布线。

公开(公告)号：US08431480B2

公开(公告)日：2013-04-30

申请号：US13243882

申请日：2011-09-23

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.