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15 条记录 (耗时 0.024 秒)

    Process for the manufacture of wax-like esterification products
    4.
    发明授权
    Process for the manufacture of wax-like esterification products 失效
    蜡状酯化产物的制造方法

    公开(公告)号：US5019299A

    公开(公告)日：1991-05-28

    申请号：US534010

    申请日：1990-06-06

    申请人： Adolf Kuehnle ,  Helmut Kehr

    发明人： Adolf Kuehnle ,  Helmut Kehr

    IPC分类号： C08F8/00 ,  C07C67/03 ,  C07C67/08 ,  C07C69/22 ,  C07C69/26 ,  C08F8/14

    CPC分类号： C07C67/03

    摘要： Wax-like esterification products derived from optionally partially saponified hard paraffin oxidation products and mono- or multivalent alcohols, which are suitable particularly as lubricants for plastics processing, are formed in the melt with particularly high degrees of esterification and without discolorization. The conversion is conducted at 160.degree. to 220.degree. C. in the presence of zinc salts such as zinc stearate.

    摘要翻译： 衍生自任选的部分皂化的硬石蜡氧化产物和特别适用于塑料加工润滑剂的一价或多元醇的蜡样酯化产物在具有特别高度的酯化和无变色的熔体中形成。 在锌盐如硬脂酸锌存在下，在160-220℃下进行转化。

    Process for producing low-k dielectric films
    7.
    发明授权
    Process for producing low-k dielectric films 失效
    低k电介质薄膜的制造方法

    公开(公告)号：US07410914B2

    公开(公告)日：2008-08-12

    申请号：US10563450

    申请日：2004-06-02

    申请人： Adolf Kuehnle ,  Carsten Jost ,  Hartwig Rauleder ,  Come Rentrop ,  Roelant Van Dam ,  Klaas Timmer ,  Hartmut Fischer

    发明人： Adolf Kuehnle ,  Carsten Jost ,  Hartwig Rauleder ,  Come Rentrop ,  Roelant Van Dam ,  Klaas Timmer ,  Hartmut Fischer

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02126 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

    摘要： The invention relates to processes for producing low-k dielectric films on semiconductors or electrical circuits, which comprises using incompletely condensed polyhedral oligomeric silsesquioxanes of the formula [(RaXbSiO1.5)m(RcYdSiO)n] with: a, b=0-1; c, d=1; m+n≧3; a+b=1; n, m≧1, R=hydrogen atom or alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, in each case substituted or unsubstituted, X=an oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group or substituents of type R containing at least one such group of type X, Y=hydroxyl, alkoxy or a substituent of type O—SiZ1Z2Z3, where Z1, Z2 and Z3 are fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate, methacrylate or a nitrile group or substituents of type R and are identical or different, not only the substituents of type R being identical or different but also the substituents of type X and Y in each case being identical or different, and comprising at least one hydroxyl group as substituent of type Y, for producing the film, and to low-k dielectric films produced by this process.

    摘要翻译： 本发明涉及用于在半导体或电路上生产低k电介质膜的方法，其包括使用下式的不完全缩合的多面体低聚倍半硅氧烷：[（R a）a＆lt; b＆gt; 其中：a（a）和（c），m ，b = 0-1; c，d = 1; m + n> = 3; a + b = 1; n，m = 1，R =氢原子或烷基，环烷基，烯基，环烯基，炔基，环炔基，芳基或杂芳基，各自为取代或未取代的，X =氧基，羟基，烷氧基，羧基，甲硅烷基， 卤素，环氧基，酯，氟代烷基，异氰酸酯，丙烯酸酯，甲基丙烯酸酯，腈，氨基或膦基或含有至少一个X，Y =羟基，烷氧基或O-SiZ型取代基的至少一种的R型取代基， 其中Z 1，Z 2和Z 3是氟代烷基，烷氧基，甲硅烷氧基，环氧基，酯，丙烯酸酯，甲基丙烯酸酯或腈基或R的取代基相同或不同，不仅R的取代基相同或不同，而且取代基 X和Y各自相同或不同，并且包含至少一个作为Y型取代基的羟基，用于制备该膜，以及通过该方法制备的低k电介质膜。