Process for producing low-k dielectric films
    1.
    发明申请
    Process for producing low-k dielectric films 失效
    低k电介质薄膜的制造方法

    公开(公告)号:US20070166456A1

    公开(公告)日:2007-07-19

    申请号:US10563450

    申请日:2004-06-02

    IPC分类号: B05D3/12 B05D3/02

    摘要: The invention relates to processes for producing low-k dielectric films on semiconductors or electrical circuits, which comprises using incompletely condensed polyhedral oligomeric silsesquioxanes of the formula [(RaXbSiO1.5)m(RcYdSiO)n] with: a, b=0-1; c, d=1; m+n≧3; a+b=1; n, m≧1, R=hydrogen atom or alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, in each case substituted or unsubstituted, X=an oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group or substituents of type R containing at least one such group of type X, Y=hydroxyl, alkoxy or a substituent of type O—SiZ1Z2Z3, where Z1, Z2 and Z3 are fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate, methacrylate or a nitrile group or substituents of type R and are identical or different, not only the substituents of type R being identical or different but also the substituents of type X and Y in each case being identical or different, and comprising at least one hydroxyl group as substituent of type Y, for producing the film, and to low-k dielectric films produced by this process.

    摘要翻译: 本发明涉及用于在半导体或电路上生产低k电介质膜的方法,其包括使用下式的不完全缩合的多面体低聚倍半硅氧烷:[(R a)a< b> 其中:a(a)和(c),m ,b = 0-1; c,d = 1; m + n> = 3; a + b = 1; n,m = 1,R =氢原子或烷基,环烷基,烯基,环烯基,炔基,环炔基,芳基或杂芳基,各自为取代或未取代的,X =氧基,羟基,烷氧基,羧基,甲硅烷基, 卤素,环氧基,酯,氟代烷基,异氰酸酯,丙烯酸酯,甲基丙烯酸酯,腈,氨基或膦基或含有至少一个X,Y =羟基,烷氧基或O-SiZ型取代基的至少一种的R型取代基, 其中Z 1,Z 2和Z 3是氟代烷基,烷氧基,甲硅烷氧基,环氧基,酯,丙烯酸酯,甲基丙烯酸酯或腈基或R的取代基相同或不同,不仅R的取代基相同或不同,而且取代基 X和Y各自相同或不同,并且包含至少一个作为Y型取代基的羟基,用于制备该膜,以及通过该方法制备的低k电介质膜。

    Process for producing low-k dielectric films
    2.
    发明授权
    Process for producing low-k dielectric films 失效
    低k电介质薄膜的制造方法

    公开(公告)号:US07410914B2

    公开(公告)日:2008-08-12

    申请号:US10563450

    申请日:2004-06-02

    IPC分类号: H01L21/00

    摘要: The invention relates to processes for producing low-k dielectric films on semiconductors or electrical circuits, which comprises using incompletely condensed polyhedral oligomeric silsesquioxanes of the formula [(RaXbSiO1.5)m(RcYdSiO)n] with: a, b=0-1; c, d=1; m+n≧3; a+b=1; n, m≧1, R=hydrogen atom or alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, in each case substituted or unsubstituted, X=an oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group or substituents of type R containing at least one such group of type X, Y=hydroxyl, alkoxy or a substituent of type O—SiZ1Z2Z3, where Z1, Z2 and Z3 are fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate, methacrylate or a nitrile group or substituents of type R and are identical or different, not only the substituents of type R being identical or different but also the substituents of type X and Y in each case being identical or different, and comprising at least one hydroxyl group as substituent of type Y, for producing the film, and to low-k dielectric films produced by this process.

    摘要翻译: 本发明涉及用于在半导体或电路上生产低k电介质膜的方法,其包括使用下式的不完全缩合的多面体低聚倍半硅氧烷:[(R a)a< b> 其中:a(a)和(c),m ,b = 0-1; c,d = 1; m + n> = 3; a + b = 1; n,m = 1,R =氢原子或烷基,环烷基,烯基,环烯基,炔基,环炔基,芳基或杂芳基,各自为取代或未取代的,X =氧基,羟基,烷氧基,羧基,甲硅烷基, 卤素,环氧基,酯,氟代烷基,异氰酸酯,丙烯酸酯,甲基丙烯酸酯,腈,氨基或膦基或含有至少一个X,Y =羟基,烷氧基或O-SiZ型取代基的至少一种的R型取代基, 其中Z 1,Z 2和Z 3是氟代烷基,烷氧基,甲硅烷氧基,环氧基,酯,丙烯酸酯,甲基丙烯酸酯或腈基或R的取代基相同或不同,不仅R的取代基相同或不同,而且取代基 X和Y各自相同或不同,并且包含至少一个作为Y型取代基的羟基,用于制备该膜,以及通过该方法制备的低k电介质膜。

    CONTAINER FOR HANDLING AND TRANSPORTING OF HIGH-PURITY AND ULTRA-HIGH-PURITY CHEMICALS
    7.
    发明申请
    CONTAINER FOR HANDLING AND TRANSPORTING OF HIGH-PURITY AND ULTRA-HIGH-PURITY CHEMICALS 审中-公开
    用于处理和运输高纯度和超高纯化学品的容器

    公开(公告)号:US20150102070A1

    公开(公告)日:2015-04-16

    申请号:US14383757

    申请日:2013-02-11

    IPC分类号: B67D7/02 B65B3/00 B67D7/84

    摘要: The invention relates to an empty container (1) for accommodating high-purity and ultra-high-purity, air- and/or moisture-sensitive liquid or condensable compounds, comprising a cylindrical jacket (3), a bottom (4a) and an upper end piece (4b, 4b′) at the two ends of the cylindrical jacket, an associated connection unit (2) including shut-off/multiple-way and rinsing system (5), and an associated immersion pipe (7), characterized in that the lower end of the immersion pipe (7a) protrudes into a recess (4c) (depression), which is introduced in the bottom (4a) and which is the lowest point of the bottom, and/or the lower end of the immersion pipe (7a) is tapered and is brought close to the lowest point of the bottom (4a) to within less than 2 mm by means of the tip of the tapered immersion pipe (7b) or touches the lowest point of the bottom with the tip of the tapered immersion pipe (7b). The invention further relates to the use of empty containers according to the invention for storing, handling, and/or transporting such high-purity and ultra-high-purity compounds.

    摘要翻译: 本发明涉及一种用于容纳高纯度和超高纯度空气和/或湿度敏感性液体或可冷凝化合物的空容器(1),其包括圆柱形护套(3),底部(4a)和 包括关闭/多路和冲洗系统(5)的关联连接单元(2)和相关联的浸入式管道(7),其特征在于,所述圆柱形套管两端的上端件(4b,4b') 浸入管(7a)的下端突出到凹入部(4c)(凹陷部)(凹部),该凹部被引入到底部(4a)中,并且是底部的最低点,和/ 浸入管(7a)是锥形的,并且通过锥形浸入管(7b)的尖端使其靠近底部(4a)的最低点到小于2mm内,或者接触底部的最低点 锥形浸入管(7b)的尖端。 本发明还涉及根据本发明的用于储存,处理和/或运输这种高纯度和超高纯度化合物的空容器的用途。