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15 条记录 (耗时 0.017 秒)

    Electrocatalytic selective oxidation of hydrocarbons
    2.
    发明授权
    Electrocatalytic selective oxidation of hydrocarbons 失效
    碳氢化合物的电催化选择性氧化

    公开(公告)号：US06210557B1

    公开(公告)日：2001-04-03

    申请号：US09395214

    申请日：1999-09-14

    申请人： Guido Stochniol ,  Mark Duda ,  Adolf Kuehnle

    发明人： Guido Stochniol ,  Mark Duda ,  Adolf Kuehnle

    IPC分类号： C25B300

    CPC分类号： C25B3/02 ,  C25B11/0452 ,  C25B11/0463 ,  C25B13/04 ,  H01M4/9025 ,  H01M4/9033 ,  H01M8/1213 ,  H01M8/1246 ,  Y02E60/525 ,  Y02P70/56

    摘要： A process for the electrochemical oxidation of organic compounds, wherein the anode material used is a mixed oxide of formula (I) MoaBibX1cX2dX3eX4fX5gOh  (I) where X1 is V, Nb, Cr, W, Ta, Ga, Ce, and/or La; X2 is Li, La, K, Rb, Cs, Cu, Ag, Au, Pd and/or Pt; X3 is Fe, Co, Ni and/or Zn; X4 is Sn, Rb, Sb and/or Te; X5 is Ti, Zr, Si and/or Al; and where a is 0-3; b is 0-3; c is 0-12.5; d is 0-5; e is 0-1.5; f is 0-1; and g is 0-25 with the proviso that a+d≧0.15.

    摘要翻译： 一种用于有机化合物的电化学氧化的方法，其中所用的阳极材料是式（I）的混合氧化物，其中X 1是V，Nb，Cr，W，Ta，Ga，Ce和/或La; X2是Li，La，K，Rb，Cs，Cu，Ag，Au，Pd和/或Pt; X3是Fe，Co，Ni和/或Zn; X4是Sn，Rb，Sb和/或Te; X5是Ti，Zr，Si和/或Al; 而a为0-3; b为0-3; c为0-12.5; d为0-5; e为0-1.5; f为0-1; 而g为0-25，条件是a + d> = 0.15。

    Process for producing low-k dielectric films
    6.
    发明授权
    Process for producing low-k dielectric films 失效
    低k电介质薄膜的制造方法

    公开(公告)号：US07410914B2

    公开(公告)日：2008-08-12

    申请号：US10563450

    申请日：2004-06-02

    申请人： Adolf Kuehnle ,  Carsten Jost ,  Hartwig Rauleder ,  Come Rentrop ,  Roelant Van Dam ,  Klaas Timmer ,  Hartmut Fischer

    发明人： Adolf Kuehnle ,  Carsten Jost ,  Hartwig Rauleder ,  Come Rentrop ,  Roelant Van Dam ,  Klaas Timmer ,  Hartmut Fischer

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02126 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

    摘要： The invention relates to processes for producing low-k dielectric films on semiconductors or electrical circuits, which comprises using incompletely condensed polyhedral oligomeric silsesquioxanes of the formula [(RaXbSiO1.5)m(RcYdSiO)n] with: a, b=0-1; c, d=1; m+n≧3; a+b=1; n, m≧1, R=hydrogen atom or alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, in each case substituted or unsubstituted, X=an oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group or substituents of type R containing at least one such group of type X, Y=hydroxyl, alkoxy or a substituent of type O—SiZ1Z2Z3, where Z1, Z2 and Z3 are fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate, methacrylate or a nitrile group or substituents of type R and are identical or different, not only the substituents of type R being identical or different but also the substituents of type X and Y in each case being identical or different, and comprising at least one hydroxyl group as substituent of type Y, for producing the film, and to low-k dielectric films produced by this process.

    摘要翻译： 本发明涉及用于在半导体或电路上生产低k电介质膜的方法，其包括使用下式的不完全缩合的多面体低聚倍半硅氧烷：[（R a）a＆lt; b＆gt; 其中：a（a）和（c），m ，b = 0-1; c，d = 1; m + n> = 3; a + b = 1; n，m = 1，R =氢原子或烷基，环烷基，烯基，环烯基，炔基，环炔基，芳基或杂芳基，各自为取代或未取代的，X =氧基，羟基，烷氧基，羧基，甲硅烷基， 卤素，环氧基，酯，氟代烷基，异氰酸酯，丙烯酸酯，甲基丙烯酸酯，腈，氨基或膦基或含有至少一个X，Y =羟基，烷氧基或O-SiZ型取代基的至少一种的R型取代基， 其中Z 1，Z 2和Z 3是氟代烷基，烷氧基，甲硅烷氧基，环氧基，酯，丙烯酸酯，甲基丙烯酸酯或腈基或R的取代基相同或不同，不仅R的取代基相同或不同，而且取代基 X和Y各自相同或不同，并且包含至少一个作为Y型取代基的羟基，用于制备该膜，以及通过该方法制备的低k电介质膜。

    Transparent masterbatches for thermoplastics
    9.
    发明授权
    Transparent masterbatches for thermoplastics 失效
    用于热塑性塑料的透明母粒

    公开(公告)号：US07598307B2

    公开(公告)日：2009-10-06

    申请号：US10556719

    申请日：2004-03-18

    申请人： Adolf Kuehnle ,  Carsten Jost

    发明人： Adolf Kuehnle ,  Carsten Jost

    IPC分类号： B60C1/00 ,  C08K5/24 ,  C08K5/54 ,  A61Q19/00

    CPC分类号： C08L83/04 ,  C08G77/045 ,  C08G77/12 ,  C08G77/14 ,  C08G77/16 ,  C08G77/18 ,  C08G77/20 ,  C08G77/24 ,  C08G77/26 ,  C08G77/46 ,  C08G77/50 ,  C08G77/60 ,  C08J3/226 ,  C08L83/06 ,  C08L83/08 ,  C08L2666/02

    摘要： The invention relates to a transparent masterbatch for improving the surface properties of thermoplastics, said masterbatch containing from 10% to 60% by weight of polyhedral oligomeric silicon-oxygen cluster units in accordance with the formula [(RaXb,SiO1-5)m(RCXdSIO)n(ReXfSi2O2.5)o(RgXhSi2O2)p] where: a, b, c=0-1; d=1-2; e, f, g=0-3; h=1-4; m+n+o+p≧4; a+b=1; c+d=2; e+f=3 and g+h=4; R=hydrogen atom, alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl group or polymer unit, each substituted or unsubstituted, or further functionalized polyhedral oligomeric silicon-oxygen cluster units attached via a polymer unit or a bridging unit, X=oxy, hydroxy, alkoxy, carboxy, silyl, alkylsilyl, alkoxysilyl, siloxy, alkylsiloxy, alkoxysiloxy, silylalkyl, alkoxysilylalkyl, alkylsilylalkyl, halogen, epoxy, ester, fluoroalkyl, isocyanate, blocked isocyanate, acrylate, methacrylate, nitrile, amino, phosphine or polyether group or substituents of type R containing at least one such group of type X the substituents of type R being identical or different and the substituents of type X being identical or different and from 40% to 9011/o by weight of a thermoplastic carrier material, and to a transparent thermoplastic and to its production process.

    摘要翻译： 本发明涉及一种用于改善热塑性塑料表面性能的透明母料，所述母料含有按重量计10％至60％重量的多面体低聚硅 - 氧簇簇单元[（RaXb，SiO1-5）m（RCXdSIO ）n（ReXfSi2O2.5）o（RgXhSi2O2）p]其中：a，b，c = 0-1; d = 1-2; e，f，g = 0-3; h = 1-4; m + n + o + p> = 4; a + b = 1; c + d = 2; e + f = 3，g + h = 4; R =氢原子，烷基，环烷基，烯基，环烯基，炔基，环炔基或聚合物单元，每个取代或未取代的或通过聚合单元或桥接单元连接的其它官能化多面体低聚硅 - 氧簇簇，X =氧， 羟基，烷氧基，羧基，甲硅烷基，烷基甲硅烷氧基，烷氧基甲硅烷氧基，甲硅烷基烷基，烷氧基甲硅烷基烷基，烷基甲硅烷基烷基，卤素，环氧基，酯，氟代烷基，异氰酸酯，封端异氰酸酯，丙烯酸酯，甲基丙烯酸酯，腈，氨基，膦或聚醚基团或 R型的取代基包含至少一个这种X型基团，R型取代基相同或不同，并且X型取代基相同或不同，为热塑性载体材料的重量百分比为40％至9011 / 透明的热塑性塑料及其生产工艺。