利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.032 秒)

    MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
    磁性元件及其制造方法

    公开(公告)号：US20120308728A1

    公开(公告)日：2012-12-06

    申请号：US13584293

    申请日：2012-08-13

    申请人： Hideaki FUKUZAWA ,  Shuichi Murakami ,  Hiromi Yuasa ,  Yoshihiko Fuji

    发明人： Hideaki FUKUZAWA ,  Shuichi Murakami ,  Hiromi Yuasa ,  Yoshihiko Fuji

    IPC分类号： B05D1/38

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/04 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

    摘要： A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer arranged in the magnetization pinned layer, in the magnetization free layer, in the interface between the magnetization pinned layer and the intermediate layer, in the interface between the intermediate layer and the magnetization free layer, or in the interface between the magnetization pinned layer or the magnetization free layer and the cap layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which the functional layer is formed of a layer including nitrogen and a metal material containing 5 atomic % or more of Fe.

    摘要翻译： 磁阻元件包括磁阻膜，其包括磁化被钉扎层，磁化自由层，布置在磁化钉扎层和磁化自由层之间的中间层，布置在磁化钉扎层或磁化自由层上的盖层，以及 功能层，布置在磁化固定层中，在磁化自由层中，在磁化被钉扎层和中间层之间的界面中，在中间层和磁化自由层之间的界面中，或者在磁化固定 层或磁化自由层和盖层，以及一对电极，其垂直于磁阻膜的平面通过电流，其中功能层由包含氮的层和含有5原子％的金属材料形成，或 更多的铁。

    METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM
    2.
    发明申请
    METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM 审中-公开
    制造磁记录介质的方法

    公开(公告)号：US20110049090A1

    公开(公告)日：2011-03-03

    申请号：US12872820

    申请日：2010-08-31

    申请人： Yoshiyuki KAMATA ,  Hiromi YUASA ,  Shuichi MURAKAMI ,  Hideaki FUKUZAWA ,  Michiko HARA ,  Yoshihiko FUJI ,  Masatoshi SAKURAI

    发明人： Yoshiyuki KAMATA ,  Hiromi YUASA ,  Shuichi MURAKAMI ,  Hideaki FUKUZAWA ,  Michiko HARA ,  Yoshihiko FUJI ,  Masatoshi SAKURAI

    IPC分类号： G11B5/84

    CPC分类号： G11B5/855

    摘要： According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a magnetic recording layer, an etching protection layer, and an adhesion layer on a substrate, applying a resist on the adhesion layer, transferring patterns of protrusions and recesses on the resist by imprinting to form a resist pattern, patterning the adhesion layer by using the resist pattern as a mask, patterning the etching protection layer by using the resist pattern as a mask, etching the magnetic recording layer by using patterns of the adhesion layer and the etching protection layer as masks to form patterns of protrusions and recesses of the magnetic recording layer and removing the pattern of the adhesion layer, stripping the pattern of the etching protection layer, and exposing the patterns of protrusions and recesses of the magnetic recording layer to a non-ionized reducing gas.

    摘要翻译： 根据一个实施例，制造磁记录介质的方法包括在基板上形成磁记录层，蚀刻保护层和粘合层，在粘合层上涂布抗蚀剂，在抗蚀剂上转印凹凸图案 通过印刷形成抗蚀剂图案，通过使用抗蚀剂图案作为掩模对粘合层进行图案化，通过使用抗蚀剂图案作为掩模对蚀刻保护层进行图案化，通过使用粘合层和蚀刻的图案蚀刻磁记录层 保护层作为掩模以形成磁记录层的突起和凹陷的图案并去除粘附层的图案，剥离蚀刻保护层的图案，以及将磁记录层的突起和凹陷的图案暴露于非磁性层 - 还原气体。

    METHOD OF MANUFACTURING A MAGNETO-RESISTANCE EFFECT ELEMENT
    6.
    发明申请
    METHOD OF MANUFACTURING A MAGNETO-RESISTANCE EFFECT ELEMENT 失效
    制造磁阻效应元件的方法

    公开(公告)号：US20120192998A1

    公开(公告)日：2012-08-02

    申请号：US13419198

    申请日：2012-03-13

    申请人： Hideaki FUKUZAWA ,  Hiromi Yuasa ,  Yoshihiko Fuji

    发明人： Hideaki FUKUZAWA ,  Hiromi Yuasa ,  Yoshihiko Fuji

    IPC分类号： C23C8/36 ,  C23C8/80 ,  C23C8/00

    CPC分类号： B25G1/102

    摘要： An example method for manufacturing a magneto-resistance effect element having a magnetic layer, a free magnetization layer, and a spacer layer includes forming a first metallic layer and forming, on the first metallic layer, a second metallic layer. A first conversion treatment is performed to convert the second metallic layer into a first insulating layer and to form a first metallic portion penetrating through the first insulating layer. A third metallic layer is formed on the first insulating layer and the first metallic portion. A second conversion treatment is performed to convert the third metallic layer into a second insulating layer and to form a second metallic portion penetrating through the second insulating layer.

    摘要翻译： 用于制造具有磁性层，自由磁化层和间隔层的磁阻效应元件的示例性方法包括形成第一金属层，并在第一金属层上形成第二金属层。 执行第一转换处理以将第二金属层转换成第一绝缘层并形成贯穿第一绝缘层的第一金属部分。 在第一绝缘层和第一金属部分上形成第三金属层。 执行第二转换处理以将第三金属层转换成第二绝缘层并形成贯穿第二绝缘层的第二金属部分。

    SPECIMEN IDENTIFICATION SYSTEM AND SPECIMEN IDENTIFICATION DEVICE
    7.
    发明申请
    SPECIMEN IDENTIFICATION SYSTEM AND SPECIMEN IDENTIFICATION DEVICE 有权
    标本识别系统和样本识别装置

    公开(公告)号：US20120241619A1

    公开(公告)日：2012-09-27

    申请号：US13430326

    申请日：2012-03-26

    申请人： Hideaki FUKUZAWA ,  Hiromi Yuasa

    发明人： Hideaki FUKUZAWA ,  Hiromi Yuasa

    IPC分类号： G01N21/55 ,  G01N21/59

    CPC分类号： G01N21/3581 ,  G01N21/3577

    摘要： In a specimen identification system, an oscillator directs a THz wave toward a channel that accommodates a specimen. A receiver detects the THz wave transmitted through the specimen. A first controller controls the oscillator to sweep the oscillation frequency of the THz wave within a frequency band. A receiver generates a receiving signal by sweeping the receiving frequency of the THz wave within the frequency band. A specimen identification unit specifies the specimen based on the waveform of the receiving signal within the frequency band.

    摘要翻译： 在样本识别系统中，振荡器将THz波导向容纳样本的通道。 接收器检测通过样品传输的太赫兹波。 第一控制器控制振荡器扫描频带内的太赫兹波的振荡频率。 接收机通过扫描频带内的THz波的接收频率来产生接收信号。 样本识别单元基于频带内的接收信号的波形来指定样本。

    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY
    9.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY 有权
    磁阻效应元件，磁头，磁力再生装置和磁记忆

    公开(公告)号：US20090225477A1

    公开(公告)日：2009-09-10

    申请号：US12468467

    申请日：2009-05-19

    申请人： Hideaki FUKUZAWA ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Hideaki FUKUZAWA ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G11B5/33 ,  G11B5/39

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

    摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

    摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

    METHOD AND APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT
    10.
    发明申请
    METHOD AND APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT 有权
    用于制造磁性元件的方法和装置

    公开(公告)号：US20090061105A1

    公开(公告)日：2009-03-05

    申请号：US12248578

    申请日：2008-10-09

    申请人： Hideaki FUKUZAWA ,  Katsuhiko Koui ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

    发明人： Hideaki FUKUZAWA ,  Katsuhiko Koui ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

    IPC分类号： B05D5/12

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/161 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  Y10T428/115

    摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.

    摘要翻译： 本发明涉及一种用于制造具有磁化钉扎层，磁化自由层和间隔层的磁阻元件的方法，所述隔离层包括设置在磁化被钉扎层和磁化自由层之间的绝缘层，以及穿透绝缘层的电流路径 。 在该方法中形成间隔层的工艺包括沉积形成金属路径的第一金属层，在第一金属层上沉积第二金属层，执行用离子束或RF等离子体照射第二金属层的预处理 稀有气体，并且通过供给氧化气体或氮化气体将第二金属层转化为绝缘层。