摘要:
A method for depositing metal layers with good surface morphology using sequential flow deposition includes alternately exposing a substrate in a process chamber to a metal-carbonyl precursor gas and a reducing gas. During exposure with the metal-carbonyl precursor gas, a thin metal layer is deposited on the substrate, and subsequent exposure of the metal layer to the reducing gas aids in the removal of reaction by-products from the metal layer. The metal-carbonyl precursor gas and a reducing gas exposure steps can be repeated until a metal layer with a desired thickness is achieved. The metal-carbonyl precursor can, for example, be selected from W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12.
摘要:
A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.
摘要:
A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.
摘要:
A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.
摘要:
A metal film forming method, includes the steps of (a) (s13, s15) supplying a plural kinds of ingredient gases to a base barrier film (3) in sequence, wherein at least one of the gases includes a metal, and (b) (s14, s16) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film (5) of the metal is formed on the base barrier film (3).
摘要:
A semiconductor device fabricating method includes a preparatory process that brings a first source gas containing tungsten atoms into contact with a workpiece and that does not bring a second source gas containing nitrogen atoms into contact with the workpiece, and a film forming process that forms a tungsten nitride film on the workpiece by using the first and the second source gases so as to fabricate a semiconductor device. The semiconductor device fabricating method is capable of preventing the tungsten nitride film from peeling off from a layer underlying the same when the tungsten nitride film is subjected to heat treatment.
摘要:
A spotting pin 10 capable of spotting equal amounts of a solution in a sequential manner comprises a first member 11 having a solution holding portion 13 formed at the tip thereof for holding a predetermined amount of solution, and a second member 12 having a solution supply portion 14 for holding the solution by a capillary action, the second member adapted to slide along the first member. As the solution supply portion 14 is brought into contact with the solution holding portion 13, the solution enters the solution holding portion 13 from the solution supply portion 14 by a capillary action. As the solution supply portion 14 and the solution holding portion 13 are separated from each other, a predetermined amount of the solution can be carried in the solution holding portion 13. Then, as the solution holding portion 13 is brought into contact with a water-absorbing support 21, a spot 22 of a predetermined amount of the solution can be formed thereon.
摘要:
The present invention provides a high-sensitive, inexpensive biochip reader for reading a biochip as compared to a fluorescence method. The biochip reader is provided with an X-Y stage (3) for mounting a biochip (6) and scanning the biochip (6) in a two-dimensional manner, a controller (4) for the X-Y stage, a magnetic sensor (1) for reading the magnetic field strength, an ohmmeter (2), and a computer (5) for signal processing. As a result, a high-performance, inexpensive biochip reader can be provided without using an expensive laser or an expensive optical system, by employing a magnetic sensor and a disk driving mechanism generally used in a hard disk drive and the like.
摘要:
The present invention enables the accurate management of the total number of spotting counts for each spotting pin. An IC chip is installed on the spotting pin to allow the IC chip to accumulate spotting-count information, and during each spotting time the information is loaded up and displayed.
摘要:
A cleaning end point detecting apparatus detects an end point of a cleaning process in which contamination attached to an inner wall of a reaction chamber is removed by introducing a cleaning gas into the chamber to produce a cluster cloud and detached particles. An irradiating unit irradiates a laser beam onto the cluster cloud and the detached particles within the reaction chamber to produce a scattered laser beam. A monitoring unit monitors the scattered laser beam as a two-dimensional image information. A judging unit judges the end point of the cleaning process on the basis of the two-dimensional image information. Preferably, the judging unit judges, as the end point of the cleaning process, a time instant when neither the detached particles nor the cluster cloud are detected on the basis of the two-dimensional image information.