公开(公告)号：US06633419B2

公开(公告)日：2003-10-14

申请号：US09890274

申请日：2001-11-09

申请人： Hideo Hosono ,  Masahiro Hirano ,  Nobuhiko Sarukura ,  Kenichi Kawamura

发明人： Hideo Hosono ,  Masahiro Hirano ,  Nobuhiko Sarukura ,  Kenichi Kawamura

IPC分类号： G03H104

CPC分类号： G03H1/04 ,  G02B2006/12107 ,  G03H1/0272 ,  G03H2001/0482 ,  G03H2222/33 ,  G03H2260/62 ,  G03H2270/11 ,  G03H2270/13 ,  H01S3/0057

摘要： A method and apparatus for producing a hologram using a two-beam laser interference exposure process, comprising the steps of using as a light source a femtosecond laser having a pulse width of 900-10 femtoseconds and a peak output of 1 GW or more and capable of generating a pulse beam at or close to the Fourier transform limit, dividing the pulse beam from the laser into two by a beam splitter, controlling the two beams temporally through an optical delay circuit and spatially using plane and concave mirrors each having a slightly rotatable reflection surface to converge the beams on a surface of or within a substrate for recording a hologram at an energy density of 100 GW/cm2 or more with keeping each polarization plane of the two beams in parallel so as to match the converged spot of the two beams temporally and spatially, whereby a hologram is recorded irreversibly on the substrate formed of a transparent material, semiconductor material or metallic material.

摘要翻译： 一种使用双光束激光干涉曝光工艺制造全息图的方法和装置，包括以下步骤：使用具有900-10飞秒脉冲宽度和1GW或更大的峰值输出的飞秒激光，并具有能力 在或者接近于傅里叶变换极限的情况下产生脉冲束，通过分束器将来自激光器的脉冲光束分成两个，通过光学延迟电路暂时控制两个光束，并在空间上使用每个具有可旋转的平面和凹面镜 反射表面以将光束会聚在衬底的表面或衬底内，用于以100GW / cm 2的能量密度记录全息图，同时保持两个光束的每个偏振面 平行地在时间上和空间上匹配两个光束的会聚点，由此在由透明材料，半导体材料或金属材料形成的基板上不可逆地记录全息图。

公开(公告)号：US07428085B2

公开(公告)日：2008-09-23

申请号：US10504634

申请日：2003-02-13

申请人： Hideo Hosono ,  Masahiro Hirano ,  Kenichi Kawamura ,  Taisuke Miura ,  Hayato Kamioka

发明人： Hideo Hosono ,  Masahiro Hirano ,  Kenichi Kawamura ,  Taisuke Miura ,  Hayato Kamioka

IPC分类号： G03H1/02

CPC分类号： G02B5/1857 ,  G02B17/023 ,  G03H1/0244 ,  G03H1/04 ,  G03H2001/0413 ,  G03H2001/0415 ,  G03H2001/0482 ,  G03H2001/0484 ,  G03H2001/0491 ,  G03H2222/33 ,  G03H2223/26 ,  G03H2240/24 ,  G03H2260/62 ,  G03H2270/13 ,  G03H2270/52

摘要： Disclosed is a method of producing a hologram through a two-beam laser interfering exposure process, which comprises emitting a coherent laser light with a pulse width (τ) ranging from greater than 900 femtoseconds to 100 picoseconds and a laser power of 10 μJ/pulse or more using a solid-state laser as a light source, dividing the pulses light from the laser into two beams, controlling the two beams temporally and spatially in such a manner that the two beam are converged on a surface of or inside a workpiece for recording a hologram while matching the respective converged spots of the two beams with one another temporally and spatially to create the interference therebetween so as to record a surface-relief hologram on the surface of the workpiece or an embedded hologram inside the workpiece in an irreversible manner. The present invention can solve a problem with a conventional process of recording a hologram in a non-photosensitive material in an irreversible manner using interfering femtosecond laser pulses, specifically, distortion in the waveforms of pulsed laser beams and resulting instability in recording of an embedded hologram due to a non-linear optical interaction between the femtosecond laser pulses and air/the material.

摘要翻译： 公开了一种通过双光束激光干涉曝光工艺制造全息图的方法，其包括发射脉冲宽度（τ）范围从大于900飞秒到100皮秒的相干激光，激光功率为10μJ/脉冲 或更多，使用固态激光器作为光源，将来自激光器的光脉冲分成两束光束，以这样的方式控制两个光束，使得两个光束会聚在工件的表面上或内部，以便 记录全息图，同时在时间上和空间上彼此相互匹配两个光束的各个会聚点，以在它们之间产生干涉，以便以不可逆的方式在工件表面或工件内的嵌入全息图中记录表面浮雕全息图 。 本发明可以解决使用干涉飞秒激光脉冲以不可逆方式记录全息图的常规方法的问题，特别是脉冲激光束的波形失真以及嵌入式全息图记录中的不稳定性 由于飞秒激光脉冲和空气/材料之间的非线性光学相互作用。

公开(公告)号：US20060019171A1

公开(公告)日：2006-01-26

申请号：US10504634

申请日：2003-02-13

申请人： Hideo Hosono ,  Masahiro Hirano ,  Kenichi Kawamura ,  Taisuke Miura ,  Hayato Kamioka

发明人： Hideo Hosono ,  Masahiro Hirano ,  Kenichi Kawamura ,  Taisuke Miura ,  Hayato Kamioka

IPC分类号： G03H1/04

CPC分类号： G02B5/1857 ,  G02B17/023 ,  G03H1/0244 ,  G03H1/04 ,  G03H2001/0413 ,  G03H2001/0415 ,  G03H2001/0482 ,  G03H2001/0484 ,  G03H2001/0491 ,  G03H2222/33 ,  G03H2223/26 ,  G03H2240/24 ,  G03H2260/62 ,  G03H2270/13 ,  G03H2270/52

摘要： Disclosed is a method of producing a hologram through a two-beam laser interfering exposure process, which comprises emitting a coherent laser light with a pulse width (τ) ranging from greater than 900 femtoseconds to 100 picoseconds and a laser power of 10 μJ/pulse or more using a solid-state laser as a light source, dividing the pulses light from the laser into two beams, controlling the two beams temporally and spatially in such a manner that the two beam are converged on a surface of or inside a workpiece for recording a hologram while matching the respective converged spots of the two beams with one another temporally and spatially to create the interference therebetween so as to record a surface-relief hologram on the surface of the workpiece or an embedded hologram inside the workpiece in an irreversible manner. The present invention can solve a problem with a conventional process of recording a hologram in a non-photosensitive material in an irreversible manner using interfering femtosecond laser pulses, specifically, distortion in the waveforms of pulsed laser beams and resulting instability in recording of an embedded hologram due to a non-linear optical interaction between the femtosecond laser pulses and air/the material.

摘要翻译： 公开了一种通过双光束激光干涉曝光工艺制造全息图的方法，其包括发射脉冲宽度（τ）范围从大于900飞秒至100皮秒的相干激光，激光功率为10μJ/脉冲 或更多，使用固态激光器作为光源，将来自激光器的光脉冲分成两束光束，以这样的方式控制两个光束，使得两个光束会聚在工件的表面上或内部，以便 记录全息图，同时在时间上和空间上彼此相互匹配两个光束的各个会聚点，以在它们之间产生干涉，以便以不可逆的方式在工件表面或工件内的嵌入全息图中记录表面浮雕全息图 。 本发明可以解决使用干涉飞秒激光脉冲以不可逆方式记录全息图的常规方法的问题，特别是脉冲激光束的波形失真以及嵌入式全息图记录中的不稳定性 由于飞秒激光脉冲和空气/材料之间的非线性光学相互作用。

公开(公告)号：US20050201682A1

公开(公告)日：2005-09-15

申请号：US10507014

申请日：2003-04-24

申请人： Hideo Hosono ,  Masahiro Hirano ,  Kenichi Kawamura ,  Masanori Oto

发明人： Hideo Hosono ,  Masahiro Hirano ,  Kenichi Kawamura ,  Masanori Oto

IPC分类号： G02B6/02 ,  G02B6/122 ,  G02B6/34

CPC分类号： G02B6/02133

摘要： A femtosecond laser radiation or a picosecond laser radiation output from light source 6 is split into a first beam reflected to an angle of 90 degrees by a beam splitter 7 and a straightly advancing second beam cut out by the beam splitter 7. The first beam is reflected at an angle of 90 degrees by a second reflecting mirror 9, reflected again at an angle of 90 degrees by a fourth reflecting mirror 11, and is collimated by a second lens 15 to be irradiated onto an optical fiber core wire 13 to be written. The second beam is reflected at an angle of 90 degrees by a first reflection mirror 8, reflected again at an angle of 90 degrees by a second reflection mirror 10, and is collimated by a first lens 14 to be irradiated onto the optical fiber core wire 13 to be written. The femtosecond laser output from the light source 6 is split into two by the beam splitter 7, which interfere with each other in the vicinity of the core of the optical fiber core wire 13 to generate a change in the refractive indices of the glass depending on the light intensity distribution of the interference fringes, such that the gratings are written in the core 1.

摘要翻译： 从光源6输出的飞秒激光辐射或皮秒激光辐射通过分束器7被分裂成以90度的角度反射成90度的第一光束，以及由分束器7切出的直线前进的第二光束。第一光束是 通过第二反射镜9以90度的角度反射，由第四反射镜11再次以90度的角度反射，并被第二透镜15准直照射到待被写入的光纤芯线13上 。 第二光束通过第一反射镜8以90度的角度反射，再次以90度的角度被第二反射镜10反射，并被第一透镜14准直照射到光纤芯线 13要写 从光源6输出的飞秒激光由光束分离器7分成两部分，它们在光纤芯线13的芯部附近彼此干涉，以产生玻璃的折射率随着 干涉条纹的光强度分布，使得光栅被写入核心1。

公开(公告)号：US10032931B2

公开(公告)日：2018-07-24

申请号：US13243244

申请日：2011-09-23

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L29/26 ,  H01L29/786 ,  C23C14/00 ,  C23C14/08 ,  C23C14/28 ,  C23C14/34 ,  H01L21/02 ,  H01L27/12

摘要： A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

公开(公告)号：US20110045985A1

公开(公告)日：2011-02-24

申请号：US12934931

申请日：2009-02-20

申请人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Yoichi Kamihara ,  Takatoshi Nomura

发明人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Yoichi Kamihara ,  Takatoshi Nomura

IPC分类号： C22C30/00 ,  H01L39/00 ,  H01L39/24 ,  C22C30/02

CPC分类号： C01G55/002 ,  C01B25/088 ,  C01G49/009 ,  C01G53/006 ,  C01P2002/22 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2006/40 ,  C01P2006/42 ,  H01L39/125

摘要： A superconductor which comprises a new compound composition substituting for perovskite copper oxides. The superconductor is characterized by comprising a compound which is represented by the chemical formula A(TM)2Pn2 [wherein A is at least one member selected from the elements in Group 1, the elements in Group 2, or the elements in Group 3 (Sc, Y, and the rare-earth metal elements); TM is at least one member selected from the transition metal elements Fe, Ru, Os, Ni, Pd, or Pt; and Pn is at least one member selected from the elements in Group 15 (pnicogen elements)] and which has an infinite-layer crystal structure comprising (TM)Pn layers alternating with metal layers of the element (A).

摘要翻译： 一种超导体，其包含取代钙钛矿铜氧化物的新化合物组合物。 超导体的特征在于包含由化学式A（TM）2Pn2表示的化合物[其中A是选自组1中的元素，组2中的元素或组3中的元素（Sc ，Y和稀土金属元素）; TM是选自过渡金属元素Fe，Ru，Os，Ni，Pd或Pt中的至少一种; 并且Pn是选自第15族元素（pnicogen元素）中的至少一种元素]，并且其具有包含与元素（A）的金属层交替的（TM）Pn层的无限层晶体结构。

公开(公告)号：US07722846B2

公开(公告)日：2010-05-25

申请号：US11948053

申请日：2007-11-30

申请人： Hideo Hosono ,  Katsuro Hayashi ,  Sung Wng Kim ,  Masahiro Hirano ,  Satoru Narushima ,  Setsuro Ito

发明人： Hideo Hosono ,  Katsuro Hayashi ,  Sung Wng Kim ,  Masahiro Hirano ,  Satoru Narushima ,  Setsuro Ito

IPC分类号： C01F7/16

CPC分类号： C01F7/164 ,  C01F7/002 ,  C01F7/166 ,  C01P2002/50 ,  C01P2002/84 ,  C01P2006/40 ,  C01P2006/60 ,  C03C4/14 ,  C03C10/0036 ,  C04B35/44 ,  C04B35/6262 ,  C04B35/62675 ,  C04B35/6268 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3287 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/44 ,  C04B2235/444 ,  C04B2235/445 ,  C04B2235/446 ,  C04B2235/652 ,  C30B29/22 ,  C30B33/00 ,  H01B1/08

摘要： Provided is a method for preparing an electroconductive mayenite type compound with good properties readily and stably at low cost.A production method of an electroconductive mayenite type compound comprising a step of subjecting a precursor to heat treatment, is a method for preparing an electroconductive mayenite type compound, comprising a step of subjecting a precursor to heat treatment; wherein the precursor is a vitreous or crystalline material, which contains Ca and Al, in which a molar ratio of (CaO:Al2O3) is from (12.6:6.4) to (11.7:7.3) as calculated as oxides, and in which a total amount of CaO and Al2O3 is at least 50 mol %, and wherein the heat treatment is heat treatment comprising holding the precursor at a heat treatment temperature T of from 600 to 1415° C. and in an inert gas or vacuum atmosphere with an oxygen partial pressure PO2 in a range ofPO2≦105×exp [{−7.9×l04/(T+273)}+14.4] in the unit of Pa.

摘要翻译： 提供了一种以低成本容易且稳定地制备具有良好性能的导电性钙铝石型化合物的方法。 包括对前体进行热处理的步骤的导电性钙铝石型化合物的制造方法是制备导电性钙铝石型化合物的方法，包括使前体进行热处理的工序; 其中所述前体是含有Ca和Al的玻璃质或结晶材料，其中（CaO：Al 2 O 3）的摩尔比为（12.6:4.4）至（11.7:7.3），其计算为氧化物，其中总计 CaO和Al 2 O 3的量为至少50摩尔％，其中热处理为热处理，包括将前体保持在600-1415℃的热处理温度T下，在惰性气体或具有氧部分的惰性气体或真空气氛中 在PO2＆NlE的范围内的压力PO2为105×exp [{-7.9×104 /（T + 273）} + 14.4]。

公开(公告)号：US07696386B2

公开(公告)日：2010-04-13

申请号：US12441780

申请日：2007-09-28

申请人： Hideo Hosono ,  Haritha Buchammagari ,  Yoshitake Toda ,  Masahiro Hirano ,  Kohtaro Osakada ,  Daisuke Takeuchi

发明人： Hideo Hosono ,  Haritha Buchammagari ,  Yoshitake Toda ,  Masahiro Hirano ,  Kohtaro Osakada ,  Daisuke Takeuchi

IPC分类号： C07C45/00 ,  C07C31/18 ,  C07C29/16

CPC分类号： C07C45/72 ,  C07B41/02 ,  C07C29/143 ,  C07C29/38 ,  C07C41/26 ,  C07C41/30 ,  C07C45/73 ,  C07C46/00 ,  C07C253/30 ,  C07C31/22 ,  C07C31/42 ,  C07C31/20 ,  C07C49/83 ,  C07C49/835 ,  C07C50/20 ,  C07C255/53 ,  C07C43/23

摘要： The invention is a process of using, as a reducing agent, a 12CaO.7Al2O3 electride containing electrons in a number of 1019 or more and 2.3×1021 cm−3 or less in its cages to subject a carbonyl compound to reductive coupling in a solvent, thereby synthesizing a diol or polydiol. The invention is also a process of reducing a ketone compound in a solvent, thereby synthesizing a secondary alcohol or diketone compound. According to the process of the invention, it is possible to synthesize a diol or polydiol, or a secondary alcohol or diketone compound through simple operations in a short period without using an expensive and harmful metal hydride or metal salt nor limiting the atmosphere for the synthesis to an inert gas atmosphere as in conventional processes.

摘要翻译： 本发明是在其笼中使用含有1019以上且2.3×1021cm-3以下的电子的12CaO·7H 2 O 3电极作为还原剂的方法，以使羰基化合物在溶剂中还原偶联 ，从而合成二醇或聚二醇。 本发明也是在溶剂中还原酮化合物的方法，从而合成仲醇或二酮化合物。 根据本发明的方法，可以在短时间内通过简单的操作合成二醇或多元醇或仲醇或二酮化合物，而不使用昂贵且有害的金属氢化物或金属盐，也不限制合成气氛 到惰性气体气氛中，如常规方法。

公开(公告)号：US07323356B2

公开(公告)日：2008-01-29

申请号：US10505219

申请日：2003-02-19

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

IPC分类号： H01L21/06 ,  C30B1/02 ,  C04B35/50

CPC分类号： C30B33/00 ,  C30B1/02 ,  C30B23/02 ,  C30B29/22 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02483 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02631 ,  H01L29/24 ,  H01L33/26

摘要： Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor leasers, filed-effect transistors, or a hetero-bipolar transistors.

摘要翻译： 公开了一种LnCuOX单晶薄膜的制造方法（其中Ln为选自镧系元素和钇中的至少一种，X为选自S，Se和Te中的至少一种）， 其包括以下步骤：在单晶衬底上生长基底薄膜，在基底薄膜上沉积非晶或多晶LnCuOX薄膜以形成层压膜，然后在500℃的高温下对层压膜进行退火 。 或者更多。 虽然通过在适当条件下通过溅射工艺生长非晶膜然后在高温下退火膜而制备的常规LnCuOX膜通常是不能实现发光器件材料所需的高发射效率和电子迁移率的多晶物质 或电子器件，本发明的方法可以将适合作为单晶的优异结晶度的薄膜生长到发光二极管，半导体雷达，场效应晶体管或异质双极晶体管的建筑物黑色。

公开(公告)号：US20070194379A1

公开(公告)日：2007-08-23

申请号：US10592431

申请日：2005-02-28

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L27/12

CPC分类号： H01L29/78696 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/28 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

摘要翻译： 本发明涉及使用该无定形氧化物的无定形氧化物和薄膜晶体管。 特别地，本发明提供了电子载流子浓度小于10/30/3的非晶氧化物，以及使用这种无定形氧化物的薄膜晶体管。 在具有源电极6，漏电极5，栅电极4，栅极绝缘膜3和沟道层2的薄膜晶体管中，电子载流子浓度小于10 18的非晶氧化物， 在通道层2中使用SUP> / cm 3 3。