公开(公告)号：US07095082B2

公开(公告)日：2006-08-22

申请号：US09975680

申请日：2001-10-10

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Sato ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Sato ,  Hajime Yagi

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： G02F1/13454 ,  G02F2202/105 ,  G09B5/04 ,  G09B19/06 ,  G10L21/06

摘要： Each of an electrooptical device and a driving substrate for the electrooptical device includes a first substrate having a display section provided with pixel electrodes and a peripheral-driving-circuit section provided on the periphery of the display section, a second substrate, and an optical material disposed between the first substrate and the second substrate. A gate section including a gate electrode and a gate-insulating film is formed on one surface of the first substrate, a compound layer having high lattice matching with single-crystal silicon is formed on the surface of the first substrate, and a single-crystal silicon layer is formed on the first substrate including the compound layer and the gate section. The single-crystal silicon layer constitutes a channel region, a source region, and a drain region. In addition, a first bottom-gate thin-film transistor having the gate section is formed below the channel region, the first bottom-gate thin-film transistor constituting at least a part of the peripheral-driving-circuit section.

公开(公告)号：US06351010B1

公开(公告)日：2002-02-26

申请号：US09397099

申请日：1999-09-16

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Sato ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Sato ,  Hajime Yagi

IPC分类号： H01L2701

CPC分类号： G02F1/13454 ,  G02F2202/105 ,  G09B5/04 ,  G09B19/06 ,  G10L21/06

摘要： Each of an electrooptical device and a driving substrate for the electrooptical device includes a first substrate having a display section provided with pixel electrodes and a peripheral-driving-circuit section provided on the periphery of the display section, a second substrate, and an optical material disposed between the first substrate and the second substrate. A gate section including a gate electrode and a gate-insulating film is formed on one surface of the first substrate, a compound layer having high lattice matching with single-crystal silicon is formed on the surface of the first substrate, and a single-crystal silicon layer is formed on the first substrate including the compound layer and the gate section. The single-crystal silicon layer constitutes a channel region, a source region, and a drain region. In addition, a first bottom-gate thin-film transistor having the gate section is formed below the channel region, the first bottom-gate thin-film transistor constituting at least a part of the peripheral-driving-circuit section.

摘要翻译： 电光装置的电光装置和驱动基板中的每一个包括具有设置有像素电极的显示部的第一基板和设置在显示部的周围的外周驱动电路部，第二基板和光学材料 设置在第一基板和第二基板之间。 在第一基板的一个表面上形成包括栅电极和栅极绝缘膜的栅极部分，在第一基板的表面上形成具有与单晶硅的格子匹配的复合层，并且单晶 在包括化合物层和栅极部分的第一衬底上形成硅层。 单晶硅层构成沟道区，源极区和漏极区。 此外，具有栅极部分的第一底栅薄膜晶体管形成在沟道区的下方，第一底栅薄膜晶体管构成外围驱动电路部分的至少一部分。

公开(公告)号：US6103558A

公开(公告)日：2000-08-15

申请号：US408130

申请日：1999-09-29

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Sato ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Sato ,  Hajime Yagi

IPC分类号： H01L21/20 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01J29/96 ,  H01J31/12 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： G02F1/13454 ,  H01L27/1214

摘要： A single crystal silicon thin film having a high electron/hole mobility is uniformly formed at a relatively low temperature, so that production of an active matrix substrate having a built-in high performance driver and an electrooptical apparatus, such as a thin film semiconductor apparatus for display, becomes possible. A single crystal silicon layer is formed by hetero-epitaxial growth from a molten liquid layer of a low melting point metal having silicon dissolved therein by using a crystalline sapphire film formed on a substrate as a seed, and the single crystal silicon layer is used in a top gate type MOS TFT of an electrooptical apparatus, such as an LCD, in which a display part and a peripheral driving circuit are integrated.

摘要翻译： 具有高电子/空穴迁移率的单晶硅薄膜在相对较低的温度下均匀地形成，从而制造具有内置高性能驱动器的有源矩阵基板和诸如薄膜半导体装置的电光装置 为了显示，成为可能。 通过使用形成在基板上的结晶蓝宝石膜作为种子，从溶解有硅的低熔点金属的熔融液体层的异质外延生长形成单晶硅层，将单晶硅层用于 集成了显示部分和外围驱动电路的诸如LCD的电光装置的顶栅型MOS TFT。

公开(公告)号：US06372558B1

公开(公告)日：2002-04-16

申请号：US09376840

申请日：1999-08-18

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Sato ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Sato ,  Hajime Yagi

IPC分类号： H01L2100

CPC分类号： H01L27/127 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2202/105 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/2205 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1296 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/6678 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78648

摘要： The present invention provides an active matrix substrate having a built-in high-performance driver, in which a single crystal silicon thin film having high electron/hole mobility is uniformly deposited at a relatively low temperature, and an electrooptic device such as a thin film semiconductor device for display including the active matrix substrate. The single crystal silicon thin film is deposited by hetero epitaxial growth by a catalytic CVD method or the like using a crystalline sapphire thin film formed on the substrate as a seed so that the single crystal silicon layer obtained is used for top gate type MOSTFTs of the electrooptic device such as a LED or the like in which a display region and a peripheral driving circuit region are integrated.

摘要翻译： 本发明提供一种具有内置高性能驱动器的有源矩阵基板，其中具有高电子/空穴迁移率的单晶硅薄膜在较低温度下均匀地沉积，并且电光装置如薄膜 包括有源矩阵基板的显示用半导体装置。 通过使用形成在基板上的晶体蓝宝石薄膜作为种子的催化CVD法等，通过异质外延生长来沉积单晶硅薄膜，使得所获得的单晶硅层用于顶栅型MOSTFT 集成了显示区域和外围驱动电路区域的电光装置，例如LED等。

公开(公告)号：US20220110934A1

公开(公告)日：2022-04-14

申请号：US17645509

申请日：2021-12-22

申请人： Takashi SATO ,  Takeshi Shimosato ,  Tatsuru Moritani ,  Tadahiko Morinaga ,  Yuichi Sato ,  Akihiro Kotsugai

发明人： Takashi SATO ,  Takeshi Shimosato ,  Tatsuru Moritani ,  Tadahiko Morinaga ,  Yuichi Sato ,  Akihiro Kotsugai

IPC分类号： A61K31/496 ,  A61K9/16

摘要： A pharmaceutical composition including particles each containing a water-soluble base material and a poorly water-soluble compound, the water-soluble base material containing a rapidly water-soluble compound, wherein the poorly water-soluble compound is a kinase inhibitor and exists in an amorphous state in the water-soluble base material.

公开(公告)号：US08927982B2

公开(公告)日：2015-01-06

申请号：US13415080

申请日：2012-03-08

申请人： Junichi Koezuka ,  Yuichi Sato ,  Shinji Ohno

发明人： Junichi Koezuka ,  Yuichi Sato ,  Shinji Ohno

IPC分类号： H01L29/12 ,  H01L29/786

CPC分类号： H01L29/78618 ,  G02F1/136204 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/0259 ,  H01L21/265 ,  H01L27/1052 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

摘要翻译： 通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。 在使用有源层的氧化物半导体膜的晶体管中，在与沟道区相邻的源极区域和漏极区域中设置有微孔。 通过在形成于氧化物半导体膜中的源极区域和漏极区域内设置微孔，氧化物半导体膜的沟道区域中所含的氢能够被捕获在微孔中。

公开(公告)号：US08859330B2

公开(公告)日：2014-10-14

申请号：US13419468

申请日：2012-03-14

申请人： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato

发明人： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato

IPC分类号： H01L21/00 ,  H01L21/425 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L21/425 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.

摘要翻译： 提供了包括具有稳定的电特性和高可靠性的氧化物半导体的半导体器件。 在制造包括氧化物半导体膜的晶体管的方法中，执行将稀有气体离子注入到氧化物半导体膜中的注入步骤，并且将减少稀有气体离子的氧化物半导体膜在减小的温度下进行加热步骤 压力，在氮气气氛中或在稀有气体气氛中，由此释放在其中植入稀有气体离子的氧化物半导体膜中所含的氢或水; 因此，氧化物半导体膜被高度纯化。

公开(公告)号：US08716073B2

公开(公告)日：2014-05-06

申请号：US13547451

申请日：2012-07-12

申请人： Shunpei Yamazaki ,  Shinji Ohno ,  Yuichi Sato ,  Junichi Koezuka ,  Sachiaki Tezuka

发明人： Shunpei Yamazaki ,  Shinji Ohno ,  Yuichi Sato ,  Junichi Koezuka ,  Sachiaki Tezuka

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225

摘要： To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

摘要翻译： 提供一种可以应用于晶体管的包含低电阻区域的氧化物半导体膜。 提供可以高速执行的包括氧化物半导体膜的晶体管。 提供一种高性能半导体器件，其包括能够以高产率高速执行的包括氧化物半导体膜的晶体管。 在氧化物半导体膜上形成具有还原性的膜。 接下来，氧原子的一部分从氧化物半导体膜转移到具有还原性的膜。 接下来，通过具有还原性的膜向氧化物半导体膜添加杂质，然后去除具有还原性的膜，从而在氧化物半导体膜中形成低电阻区域。

公开(公告)号：US08637163B2

公开(公告)日：2014-01-28

申请号：US12309391

申请日：2007-07-19

申请人： Kohei Tokuda ,  Koichi Nose ,  Yuichi Sato ,  Makoto Nakazawa

发明人： Kohei Tokuda ,  Koichi Nose ,  Yuichi Sato ,  Makoto Nakazawa

IPC分类号： B32B15/00 ,  B32B15/18 ,  C22C18/00

CPC分类号： C23C30/00 ,  C22C1/002 ,  C22C18/00 ,  C22C21/06 ,  C22C21/12 ,  C22C45/00 ,  C22C45/001 ,  C22C45/005 ,  C22C45/08 ,  C23C2/04 ,  C23C2/06 ,  C23C2/12 ,  C23C4/123 ,  Y10T428/12493 ,  Y10T428/12799

摘要： An alloy with a high glass forming ability characterized by containing a group of elements A with atomic radii of less than 0.145 nm of a total of 20 to 85 atm %, a group of elements B with atomic radii of 0.145 nm to less than 0.17 nm of a total of 10 to 79.7 atm %, and a group of elements C with atomic radii of 0.17 nm or more of a total of 0.3 to 15 atm %; when the elements with the greatest contents in the group of elements A, group of elements B, and group of elements C are respectively designated as the “element a”, “element b”, and “element c”, by the ratio of the content of the element a in the group of elements A (for example, Zn and/or Al), the ratio of the content of the element b in the group of elements B (for example, Mg), and the ratio of the content of the element c in the group of elements C (for example, Ca) all being 70 atm % or more; and by the liquid forming enthalpy between any two elements selected from the element a, element b, and element c being negative.

摘要翻译： 具有高玻璃形成能力的合金，其特征在于含有一组元素A，原子半径小于0.145nm，总数为20至85atm％的元素A，原子半径为0.145nm至小于0.17nm的元素B 总计为10〜79.7atm％，原子半径为0.17nm以上的元素C为0.3〜15atm％的组合; 当元素A，元素组B和元素C组中具有最大含量的元素分别被指定为“元素a”，“元素b”和“元素c”时，以 元素A（例如Zn和/或Al）中的元素a的含量，元素B的元素B的含量（例如Mg）的含量与含量的比例 元素C（例如Ca）中的元素c全部为70atm％以上; 并且通过在从元件a，元件b和元件c中选择的任何两个元件之间的液体形成焓是负的。

公开(公告)号：US08418277B2

公开(公告)日：2013-04-16

申请号：US12438965

申请日：2007-08-29

申请人： Mayu Okubo ,  Yoshikazu Ushijima ,  Yuichi Sato ,  Yoshinobu Kato ,  Ryosuke Hayashi ,  Ayako Harada

发明人： Mayu Okubo ,  Yoshikazu Ushijima ,  Yuichi Sato ,  Yoshinobu Kato ,  Ryosuke Hayashi ,  Ayako Harada

IPC分类号： E03D11/00

CPC分类号： E03D5/01 ,  E03D5/10 ,  E03D2201/30

摘要： A flush toilet in which an appropriate amount of water is supplied and that can be installed in an area where water pressure is low. The flush toilet is flushed with pressurized flush water and has a flush toilet body having a bowl and a drain trap pipe path; a pressurizing pump for pressurizing flush water to be jetted out; a water storage tank for storing flush water to be pressurized; flush control means for causing rim water discharge to be performed for a predetermined rim water discharge time by water supply pressure of running water and also causing jet water discharge to be made to flush the bowl; flush water replenishing means for replenishing, after the bowl is flushed, flush water to the water storage tank from the running water to thereby return the amount of flush water stored in the water storage tank to a specified level; timing means for measuring a water replenishing time after the flush water replenishing is started until the amount of flush water stored in the water storage tank return to the specified level; and water discharge time regulation means for regulating the rim water discharge time based on the water replenishing time.

摘要翻译： 一种冲水马桶，其中供应适量的水，并且可以安装在水压较低的区域。 冲水马桶用加压冲洗水冲洗，并具有带有碗和排水管道通道的抽水马桶主体; 用于对冲洗水进行加压以加压的加压泵; 用于储存冲洗水以加压的储水箱; 冲洗控制装置，用于通过自来水的供水压力使预定的轮辋排水时间进行轮辋排水，并且还引起喷射水排出以冲洗碗; 冲洗水补充装置，在碗被冲洗后，从自来水冲洗水到储水箱，从而将存储在储水箱中的冲洗水量返回到指定水平; 定时装置，用于在开始冲洗水补充之后测量补水时间，直到储存在储水箱中的冲洗水量达到指定水平; 和排水时间调节装置，用于根据补水时间调节轮辋排水时间。