公开(公告)号：US06902317B2

公开(公告)日：2005-06-07

申请号：US10450709

申请日：2002-03-14

申请人： Hideomi Koinuma ,  Hitoshi Kawaji ,  Kenji Itaka ,  Hideki Minami

发明人： Hideomi Koinuma ,  Hitoshi Kawaji ,  Kenji Itaka ,  Hideki Minami

IPC分类号： G01N27/04 ,  G01K7/02 ,  G01N27/00 ,  G01N37/00 ,  G01R31/26 ,  H01L21/66 ,  H01L35/34 ,  G01N25/00 ,  G01K3/00 ,  G01N25/20

CPC分类号： G01K7/02 ,  G01R31/26 ,  H01L35/00

摘要： A method and device for measuring thermoelectric characteristics of a combinatorial sample. The method and device are useful for rapid sample evaluation, the investigation of thermoelectric materials, and the carrier control of semiconductors. The device includes combinatorial samples patterned with a metal mask, a pair of sample holders for applying a small temperature gradient to the sample, a thermocouple for measuring the temperature gradient, and a probe pin array in contact with the sample.

摘要翻译： 一种用于测量组合样品的热电特性的方法和装置。 该方法和装置可用于快速样品评估，热电材料的研究和半导体的载体控制。 该装置包括用金属掩模图案化的组合样品，用于向样品施加小温度梯度的一对样品保持器，用于测量温度梯度的热电偶和与样品接触的探针针阵列。

公开(公告)号：US20120067410A1

公开(公告)日：2012-03-22

申请号：US13258205

申请日：2010-03-29

申请人： Nobuyuki Matsuki ,  Yoshihiro Irokawa ,  Kenji Itaka ,  Hideomi Koinuma ,  Masatomo Sumiya

发明人： Nobuyuki Matsuki ,  Yoshihiro Irokawa ,  Kenji Itaka ,  Hideomi Koinuma ,  Masatomo Sumiya

IPC分类号： H01L31/07 ,  H01L29/161 ,  H01L29/47 ,  H01L29/20

CPC分类号： H01L51/4213 ,  Y02E10/549

摘要： A Schottky-barrier junction element 1 has a Schottky-barrier junction between an organic semiconductor 3 and an organic conductor 4. The inorganic semiconductor 3 is any one of nitride semiconductors, Si, GaAs, CdS, CdTe, CuInGaSe, InSb, PbTe, PbS, Ge, InN, GaSb, and SiC. A solar cell uses this Schottky-barrier junction element 1, with its photoelectric conversion section including the Schottky junction. A photoelectric conversion element uses this Schottky-barrier junction element 1, with its conversion section for interconverting light and electricity including the Schottky junction.

摘要翻译： 肖特基势垒接合元件1在有机半导体3和有机导体4之间具有肖特基势垒结。无机半导体3是氮化物半导体，Si，GaAs，CdS，CdTe，CuInGaSe，InSb，PbTe，PbS ，Ge，InN，GaSb和SiC。 太阳能电池使用该肖特基势垒接合元件1，其光电转换部分包括肖特基结。 光电转换元件使用该肖特基势垒结元件1，其转换部分用于包括肖特基结的光和电相互转换。

公开(公告)号：US07692184B2

公开(公告)日：2010-04-06

申请号：US10594152

申请日：2005-03-24

申请人： Hideomi Koinuma ,  Kenji Itaka ,  Mitsugu Yamashiro

发明人： Hideomi Koinuma ,  Kenji Itaka ,  Mitsugu Yamashiro

IPC分类号： H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0012 ,  B82Y10/00 ,  H01L51/0046 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0562 ,  Y10T428/31504

摘要： A substrate having organic thin film capable of growing two dimensionally such organic thin film as C60 and a transistor using the same are constituted with a substrate (1) having organic thin film by sequentially depositing a buffer layer (3) and organic thin film (4) on the substrate (2), and with the buffer layer orienting the organic thin film (4). A layer easily oriented with the substrate (2) and the buffer layer (3) may be inserted between the substrate (2) and the buffer layer (3). A sapphire substrate as the substrate (2), pentacene or pentacene fluoride as the buffer layer (3), and C60 or rubrene as the organic thin film (4) may be used, thereby C60 or rubrene two dimensional thin film of high quality can be obtained. By using such a substrate (1) having organic thin film, a field effect transistor of high quality can be realized.

摘要翻译： 具有能够二维生长的有机薄膜的基板（C60）和使用其的晶体管由具有有机薄膜的基板（1）构成，所述基板（1）通过依次沉积缓冲层（3）和有机薄膜（4） ），并且缓冲层定向有机薄膜（4）。 可以在衬底（2）和缓冲层（3）之间插入容易与衬底（2）和缓冲层（3）取向的层。 可以使用蓝宝石衬底作为衬底（2），并五苯或作为缓冲层（3）的并五苯，以及作为有机薄膜（4）的C60或红荧烯，由此可以制备高品质的C60或红荧烯二维薄膜 得到。 通过使用具有有机薄膜的这种基板（1），可以实现高质量的场效应晶体管。

公开(公告)号：US20070160846A1

公开(公告)日：2007-07-12

申请号：US10585204

申请日：2004-08-27

申请人： Hideomi Koinuma ,  Kenji Itaka ,  Keiichirou Arai

发明人： Hideomi Koinuma ,  Kenji Itaka ,  Keiichirou Arai

IPC分类号： B32B9/04 ,  B32B19/00

CPC分类号： H01L51/10 ,  C09K19/38 ,  C09K19/3809 ,  C09K2219/03 ,  C23C14/12 ,  H01L51/0009 ,  H01L51/0076 ,  H01L51/0545 ,  H01L51/107 ,  H01L51/5253 ,  Y10T428/10 ,  Y10T428/31504

摘要： To provide a method of making a film of organic material excellent in moisture barrier property and/or oxygen barrier property and also to provide an electronic device excellent in long term stability, in which the film obtained by such film making method is utilized to form a protective film for protecting an electronic device, and particularly an organic electronic device, to avoid deterioration of the performance, which would otherwise be brought about by moisture and oxygen in the atmosphere. The film is formed by depositing and solidifying, on a substrate, an evaporant formed by irradiating a liquid crystal polymer capable of exhibiting an optical anisotropy with pulsed laser.

摘要翻译： 为了提供一种制备防潮性和/或氧气阻隔性优异的有机材料的膜的方法，并且还提供了通过这种成膜方法获得的膜在长时间稳定性方面优异的电子装置，以形成 用于保护电子装置的保护膜，特别是有机电子装置，以避免由于大气中的水分和氧气而导致的性能的劣化。 通过在衬底上沉积和固化通过用脉冲激光辐射具有光学各向异性的液晶聚合物形成的蒸发剂来形成膜。

公开(公告)号：US07727686B2

公开(公告)日：2010-06-01

申请号：US10585204

申请日：2004-08-27

申请人： Hideomi Koinuma ,  Kenji Itaka ,  Keiichirou Arai

发明人： Hideomi Koinuma ,  Kenji Itaka ,  Keiichirou Arai

IPC分类号： C08F4/46 ,  C08J3/28 ,  C08J7/18 ,  C09K19/00 ,  G02F1/03

CPC分类号： H01L51/10 ,  C09K19/38 ,  C09K19/3809 ,  C09K2219/03 ,  C23C14/12 ,  H01L51/0009 ,  H01L51/0076 ,  H01L51/0545 ,  H01L51/107 ,  H01L51/5253 ,  Y10T428/10 ,  Y10T428/31504

摘要： To provide a method of making a film of organic material excellent in moisture barrier property and/or oxygen barrier property and also to provide an electronic device excellent in long term stability, in which the film obtained by such film making method is utilized to form a protective film for protecting an electronic device, and particularly an organic electronic device, to avoid deterioration of the performance, which would otherwise be brought about by moisture and oxygen in the atmosphere. The film is formed by depositing and solidifying, on a substrate, an evaporant formed by irradiating a liquid crystal polymer capable of exhibiting an optical anisotropy with pulsed laser.

摘要翻译： 为了提供一种制备防潮性和/或氧气阻隔性优异的有机材料的膜的方法，并且还提供了通过这种成膜方法获得的膜在长时间稳定性方面优异的电子装置，以形成 用于保护电子装置的保护膜，特别是有机电子装置，以避免由于大气中的水分和氧气而导致的性能的劣化。 通过在衬底上沉积和固化通过用脉冲激光辐射具有光学各向异性的液晶聚合物形成的蒸发剂来形成膜。

公开(公告)号：US20070190330A1

公开(公告)日：2007-08-16

申请号：US10594152

申请日：2005-03-24

申请人： Hideomi Koinuma ,  Kenji Itaka ,  Mitsugu Yamashiro

发明人： Hideomi Koinuma ,  Kenji Itaka ,  Mitsugu Yamashiro

IPC分类号： B32B9/04 ,  B05D7/00

CPC分类号： H01L51/0012 ,  B82Y10/00 ,  H01L51/0046 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0562 ,  Y10T428/31504

摘要： A substrate having organic thin film capable of growing two dimensionally such organic thin film as C60 and a transistor using the same are constituted with a substrate (1) having organic thin film by sequentially depositing a buffer layer (3) and organic thin film (4) on the substrate (2), and with the buffer layer orienting the organic thin film (4). A layer easily oriented with the substrate (2) and the buffer layer (3) may be inserted between the substrate (2) and the buffer layer (3). A sapphire substrate as the substrate (2), pentacene or pentacene fluoride as the buffer layer (3), and C60 or rubrene as the organic thin film (4) may be used, thereby C60 or rubrene two dimensional thin film of high quality can be obtained. By using such a substrate (1) having organic thin film, a field effect transistor of high quality can be realized.

摘要翻译： 具有能够二维生长的有机薄膜的基板，具有C 60 C的有机薄膜和使用其的晶体管由具有有机薄膜的基板（1）构成，该基板通过依次沉积缓冲层（ 3）和有机薄膜（4），并且缓冲层定向有机薄膜（4）。 可以在衬底（2）和缓冲层（3）之间插入容易与衬底（2）和缓冲层（3）取向的层。 可以使用作为基板（2）的蓝宝石基板，作为缓冲层（3）的并五苯或并五苯，作为有机薄膜（4）的C 60 N或红荧烯，由此C _{60％或红荧烯二维薄膜。 通过使用具有有机薄膜的这种基板（1），可以实现高质量的场效应晶体管。}

公开(公告)号：US07150788B2

公开(公告)日：2006-12-19

申请号：US10486571

申请日：2002-08-21

申请人： Hideomi Koinuma ,  Masashi Kawasaki ,  Tomoteru Fukumura ,  Kota Terai

发明人： Hideomi Koinuma ,  Masashi Kawasaki ,  Tomoteru Fukumura ,  Kota Terai

IPC分类号： C30B29/16

CPC分类号： C30B25/18 ,  C30B23/025 ,  C30B29/32 ,  C30B33/02

摘要： A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate (1) made of SrTiO3 is formed at a first preestablished temperature thereon with a first epitaxial thin film (2) made of a first material, e. g., BaTiO3, and then on the first epitaxial thin film (2) with a second epitaxial thin film (6) made of a second material, e. g., BaxSr1−xTiO3 (where 0

摘要翻译： 提供了调整衬底和面内晶格常数调整衬底的面内晶格常数的方法。 在第一预先制备的温度下，用由第一材料制成的第一外延薄膜（2）形成由SrTiO 3 3制成的晶体衬底（1） 然后在由第二材料制成的第二外延薄膜（6）上的第一外延薄膜（2）上，例如BaTiO 3 3， 例如，含有第一材料的物质和与其一起形成的另一物质的BaxSr 1-x N 2 O 3（其中0

公开(公告)号：US20060057240A1

公开(公告)日：2006-03-16

申请号：US10528265

申请日：2003-09-19

申请人： Hideomi Koinuma ,  Yukio Yamamoto ,  Yuji Matsumoto ,  Ryota Takahashi

发明人： Hideomi Koinuma ,  Yukio Yamamoto ,  Yuji Matsumoto ,  Ryota Takahashi

IPC分类号： A01J21/00

CPC分类号： C23C14/044

摘要： It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.

摘要翻译： 它包括具有第一，第二和第三作用边缘（11a，11b，11c）的掩模（11）和用于以单轴方式相对于基板（12）移动掩模（11）的驱动装置 方向（A），其中以固定的移动速度移动掩模以使得边缘连续地作用在相同的基底区域上，同时连续施加不同的材料，依次形成三个分量的薄膜，相应的膜厚梯度相互取向在三个不同的方向 以120°的角度间隔开，以使这些膜重叠，从而形成三元相图薄膜13。

公开(公告)号：US06617539B1

公开(公告)日：2003-09-09

申请号：US09786460

申请日：2001-03-05

申请人： Hideomi Koinuma ,  Masashi Kawasaki

发明人： Hideomi Koinuma ,  Masashi Kawasaki

IPC分类号： B23K2600

CPC分类号： C23C14/541

摘要： A laser heating apparatus (20) for heating a thin film forming substrate (1) in a thin film manufacturing process is disclosed. The substrate (1) set in position in a vacuum chamber (101) of a film forming apparatus (100) is irradiated with a laser light and is thereby heated to a desired temperature. The laser light is guided to a region of the substrate (1) by means of an optical fiber (23), and the laser beams emanating from the outlet end of the optical fiber (23) is incident directly or indirectly via a reflecting mirror (33) on the substrate (1). The optical fiber (23) is sheathed with a jacket tube (24) whose interior is vacuum drawn. Using a laser light enables the arrangement to be used even in an oxidizing atmosphere and even an insulating substrate to be heated.

摘要翻译： 公开了一种用于在薄膜制造工艺中加热薄膜形成基板（1）的激光加热装置（20）。 将成膜装置（100）的真空室（101）中的基板（1）照射激光，由此被加热到期望的温度。 激光通过光纤（23）被引导到基板（1）的区域，并且从光纤（23）的出口端发出的激光束直接或间接地通过反射镜（ 33）放置在基板（1）上。 光纤（23）用内套真空抽吸的护套管（24）套管。 使用激光使得即使在氧化气氛中甚至是要加热的绝缘基板也可以使用这种布置。

公开(公告)号：US06593164B2

公开(公告)日：2003-07-15

申请号：US10193210

申请日：2002-07-12

申请人： Hikaru Kobayashi ,  Hideomi Koinuma

发明人： Hikaru Kobayashi ,  Hideomi Koinuma

IPC分类号： H01L310288

CPC分类号： H01L31/186 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A cyano process of introducing cyano ions (CN−) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.