摘要:
A combinatorial X-ray diffractor, particularly a combinatorial X-ray diffractor which can measure one row of samples among a plurality of samples arranged into a matrix simultaneously by X-ray diffraction. For the purpose of high throughput screening, a plurality of samples (10) are arranged into a row X1, a row X2, a row X3, and a row X4 on a sample stage and samples in each row are measured simultaneously by X-ray diffraction, measured data are processed by an information processor (20), information data useful for the evaluation of thin film material are automatically extracted and arranged and the extracted and arranged information data are displayed on a display apparatus (27).
摘要:
The thin film deposition system for depositing a thin film on the surface of substrates disposed in a sealed thin film deposition furnace comprises a measuring unit at a site communicating with the thin film deposition furnace, the measuring unit comprising a thin film deposition sample substrate for allowing a thin film substance flowing in from the thin film deposition furnace to adhere while X-ray incidence and extraction windows being provided on the side walls of the measuring unit, wherein X-ray is irradiated on the thin film deposition sample substrate in the measuring unit through the X-ray incidence window by means of a thin film measuring unit provided at the outside of the thin film deposition furnace, and the X-ray reflected from the thin film deposition sample substrate is sensed through the X-ray extraction window.
摘要:
There is provided an X-ray image photographing method and an X-ray image photographing apparatus capable of photographing a high resolution phase contrast image and a high resolution absorption contrast image in a short time according to the purpose only by finely adjusting the distance between a specimen and a detector with respect to an X-ray source. The X-ray image photographing method enables photographing of a fine structure with a high space resolution while d/L is sufficiently smaller than 1, when L is a distance from an X-ray source 110 to a specimen 500 and d is a distance from the specimen 500 to a detector 130. Further, a distance between a peak position and a valley position of a phase contrast is not less than ⅓Δ and not more than 3Δ, when λ is an average wavelength of the X-ray and Δ is a resolution of the detector 130.
摘要:
A X-ray scattering measurement device and measurement method can measure, with high resolution, the intensity of X-rays which have undergone small-angle scattering and diffraction with reflection geometry and can easily and accurately measure a microstructure on the surface of a sample. The X-ray scattering measurement device is suitable for microstructural measurement on the surface of a sample includes an X-ray source that generates an X-ray; a first mirror and a second mirror that continuously reflect the generated X-ray; a sample stage that supports the sample; and a two-dimensional detector that detects the X-ray scattered on the surface of the sample. The first mirror focuses the generated X-ray onto the two-dimensional detector within a plane parallel to the surface of the sample, and the second mirror focuses the X-ray reflected by the first mirror onto the surface of the sample within a plane perpendicular to the surface of the sample.
摘要:
Disclosed herein is a sample-analyzing method, in which an incident beam slit is provided between an X-ray source and a sample, a receiving side beam slit is provided between the sample and an X-ray detector, the X-ray detector detects X-rays scattered again from the sample and coming through the receiving side beam slit when the sample is irradiated with the X-rays applied through the incident beam slit, and a value is measured from a value detected by the X-ray detector. In the method, a true value is measured from the value, by using a slit function representing an influence which the incident beam slit and receiving side beam slit impose on the detected value. The slit function is determined from an intensity distribution of the X-rays scattered again from the sample. The method obtains an accurate slit function in accordance with the structure of the optical system employed and can therefore analyze the sample with high precision.
摘要:
A method and apparatus for analyzing a film structure analyze particle or pore size distribution with high accuracy and evaluate a shape of a surface or interface even in the case where the absolute amount of particles or pores in the thin film is small. The method includes fitting a simulated X-ray scattering curve obtained by simulation calculation to a measured X-ray scattering intensity curve obtained by emitting an X-ray onto a surface of a film specimen having a single layer or multi-layer structure at an angle in the vicinity of the critical angle to the surface, by varying at least one parameter characterizing a physical property of the specimen, and obtaining optimum values of parameters providing the minimum difference between the measured X-ray scattering curve and the simulated X-ray scattering curve, so as to determine the structure of the film specimen, in which plural combinations of incident angle and outgoing angle relative to the surface of the film specimen are set so that there is no correlation between the incident angle and the outgoing angle, and the simulated X-ray scattering curve is fitted to the X-ray scattering curve that is obtained by measuring X-ray intensity for the respective combinations of incident angle and outgoing angle.
摘要:
An -ray emitted from an incident optical system is incident on a sample supported by a sample support mechanism, and a diffracted X-ray is detected by a receiving optical system. The incident optical system includes an X-ray source and a multilayer-film mirror. An attitude controlling unit of the sample support mechanism switches a condition of the sample support mechanism from a state maintaining the sample to have a first attitude in which a normal line of the surface of the sample is parallel with a first axis of rotation to another state maintaining the sample to have a second attitude in which the normal line of the surface of the sample is perpendicular to the first axis of rotation. When the receiving optical system is rotated around the first axis of rotation while maintaining the sample in the first attitude, in-plane diffraction measurement is possible. On the other hand, when the receiving optical system is rotated in the same way while maintaining the sample in the second attitude, out-of-plane diffraction measurement is possible.
摘要:
A method for measuring a pole of a sample, using a reflection method, is effective substantially over all measurement regions ranging from the region of high-tilting-angle α of a conventional pole measuring to the in-plane diffraction region corresponding to low-tilting-angle α.
摘要:
There is provided a surface microstructure measurement method, a surface microstructure measurement data analysis method, and an X-ray scattering measurement device which can accurately measure a microstructure on a surface and which can evaluate a three-dimensional structural feature. In the surface microstructure measurement method, the specimen surface is irradiated with X-ray at a grazing incident angle and a scattering intensity is measured; a specimen model with a microstructure on a surface in which one or more layers is formed in a direction perpendicular to the surface and unit structures are periodically arranged in a direction parallel to the surface within the layers is assumed; a scattering intensity of X-ray scattered by the microstructure is calculated in consideration of effects of refraction and reflection caused by the layer; and the scattering intensity of X-ray calculated by the specimen model is fitted to the measured scattering intensity. Then, as a result of the fitting, an optimum value of a parameter for specifying the shape of the unit structures is determined. Therefore, it is possible to accurately measure a microstructure.
摘要:
The dead time of a pulse type X-ray detector is measured without estimation of a true X-ray intensity. The first and the second conditions are used for varying an intensity of an X-ray entering the X-ray detector. The first condition may be the slit width of a receiving slit, at least three kinds of slit width being selected. The second condition may be with or without an absorption plate. The first observed X-ray intensities are observed, with the absorption plate inserted, for three or more values in slit width. Next, the second observed X-ray intensities are observed similarly but with the absorption plate removed. A predetermined relational expression is made up among the first observed X-ray intensity, the second observed X-ray intensity, a ratio k of the second observed X-ray intensity to the first observed X-ray intensity (depending upon attenuation in X-ray intensity caused by the absorption plate) and the dead time τ of the X-ray detector. Based on the relational expression, a fitting operation is carried out with the least squares method so as to determine the dead time τ precisely.