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36 条记录 (耗时 0.043 秒)

    Plating apparatus and method
    1.
    发明授权
    Plating apparatus and method 失效
    电镀装置及方法

    公开(公告)号：US07112264B2

    公开(公告)日：2006-09-26

    申请号：US10606956

    申请日：2003-06-27

    申请人： Hidetoshi Tsuzuki ,  Noboru Toyama ,  Yasuyoshi Takai ,  Ryo Hayashi ,  Yuichi Sonoda ,  Masumitsu Iwata ,  Yusuke Miyamoto

    发明人： Hidetoshi Tsuzuki ,  Noboru Toyama ,  Yasuyoshi Takai ,  Ryo Hayashi ,  Yuichi Sonoda ,  Masumitsu Iwata ,  Yusuke Miyamoto

    IPC分类号： C25D5/02 ,  C25D7/06 ,  C25D17/00

    CPC分类号： C25D7/0671 ,  C25D5/028

    摘要： A plating apparatus includes a plating vessel for holding a plating bath containing at least metal ions, a conveying device for conveying a long conductive substrate and immersing the long conductive substrate in the plating bath, a facing electrode disposed in the plating bath so as to face one surface of the conductive substrate, a voltage application device for performing plating on the one surface of the conductive substrate by applying a voltage between the conductive substrate and the facing electrode, and a film-deposition suppression device fixedly disposed in the plating vessel so that at least a portion of the film-deposition suppression means is close to shorter-direction edges of the conductive substrate. At least a portion of the film-deposition suppression device close to the shorter-direction edges of the conductive substrate is conductive. By holding the conductive portion of the film-deposition suppression device and the conductive substrate at substantially the same potential, film deposition on the other surface of the conductive substrate is suppressed.

    摘要翻译： 电镀装置包括用于保持至少含有金属离子的电镀槽的电镀容器，用于输送长导电性基板并将长导电性基材浸渍在电镀槽中的输送装置，设置在镀浴中的面对电极， 导电基板的一个表面，通过在导电基板和对置电极之间施加电压在导电基板的一个表面上进行电镀的电压施加装置和固定地设置在电镀槽中的成膜抑制装置，使得 至少一部分成膜抑制装置接近导电基板的短边缘。 靠近导电基板的短边缘的薄膜沉积抑制装置的至少一部分是导电的。 通过将成膜抑制装置的导电部分和导电基板保持在基本相同的电位，抑制导电基板的另一个表面上的成膜。

    Method of forming zinc oxide film and process for producing photovoltaic device using it
    2.
    发明授权
    Method of forming zinc oxide film and process for producing photovoltaic device using it 失效

    公开(公告)号：US06576112B2

    公开(公告)日：2003-06-10

    申请号：US09953256

    申请日：2001-09-17

    申请人： Yuichi Sonoda ,  Noboru Toyama ,  Yusuke Miyamoto ,  Hidetoshi Tsuzuki

    发明人： Yuichi Sonoda ,  Noboru Toyama ,  Yusuke Miyamoto ,  Hidetoshi Tsuzuki

    IPC分类号： C23C2800

    CPC分类号： C25D9/08 ,  H01L31/1836 ,  H01L31/1884 ,  Y02E10/50

    摘要： The present invention provides a method of forming a zinc oxide film on a conductive substrate, which comprises dipping the conductive substrate and a counter electrode in an aqueous solution containing at least nitric acid ion and zinc ion and supplying a current between these electrodes to form a zinc oxide film, wherein the aqueous solution further contains polycarboxylic acid in which a carboxyl radical is bonded to each of carbon having sp2 hybrid orbital, or its ester with a concentration of 0.5 &mgr;mol/L to 500 &mgr;mol/L. Thereby, it is possible to form in a short time a thin film having texture structure exhibiting an optical confinement effect, to prevent abnormal growth of a deposited film, and to obtain a zinc oxide thin film having excellent uniformity and adhesion on a surface thereof where the film is formed. Also, by applying the photovoltaic device to a stacked structure, it is possible to enhance the photoelectric characteristics and mass producibility.

    Method for forming deposited film and photovoltaic element
    5.
    发明授权
    Method for forming deposited film and photovoltaic element 有权
    沉积膜和光伏元件的形成方法

    公开(公告)号：US07501305B2

    公开(公告)日：2009-03-10

    申请号：US11874352

    申请日：2007-10-18

    申请人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

    发明人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

    IPC分类号： H01L21/20

    CPC分类号： H01L21/67253 ,  C23C16/24 ,  C23C16/545 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.

    摘要翻译： 通过等离子体增强CVD在移动基板上形成含有微晶硅的沉积膜的方法包括通过等离子体增强CVD在移动的衬底上形成含有微晶硅的沉积膜，使得当厚度为300nm的沉积膜 以上，在基板处于静止状态的同时，在基板上形成有由析出膜中的结晶物质引起的拉曼散射强度的微晶硅区域的面积等于或高于 归因于非晶体的拉曼散射基于微晶硅区域的面积和由无定形构成的区域的面积为总面积的50％以上。

    Sputtering method and sputtering apparatus
    7.
    发明授权
    Sputtering method and sputtering apparatus 失效
    溅射方法和溅射装置

    公开(公告)号：US06783640B2

    公开(公告)日：2004-08-31

    申请号：US10050787

    申请日：2002-01-18

    申请人： Toshihiro Yamashita ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

    发明人： Toshihiro Yamashita ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

    IPC分类号： C23C1434

    CPC分类号： C23C14/0042 ,  C23C14/544

    摘要： In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.

    摘要翻译： 在监测等离子体的发光强度的同时，在成膜空间的基板上形成膜的溅射方法中，该方法包括以下步骤：检测在基板上形成的膜的厚度; 将检测值与膜厚的预设值进行比较; 并根据比较结果决定发光强度的目标值。 通过该方法，形成了透明导电膜，其膜厚度，薄层电阻和透射率均匀性高，因此具有优异的特性。

    METHOD FOR FORMING DEPOSITED FILM AND PHOTOVOLTAIC ELEMENT
    9.
    发明申请
    METHOD FOR FORMING DEPOSITED FILM AND PHOTOVOLTAIC ELEMENT 有权
    形成沉积膜和光伏元件的方法

    公开(公告)号：US20080096305A1

    公开(公告)日：2008-04-24

    申请号：US11874352

    申请日：2007-10-18

    申请人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

    发明人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67253 ,  C23C16/24 ,  C23C16/545 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.

    摘要翻译： 通过等离子体增强CVD在移动基板上形成含有微晶硅的沉积膜的方法包括通过等离子体增强CVD在移动的衬底上形成含有微晶硅的沉积膜，使得当厚度为300nm的沉积膜 以上，在基板处于静止状态的同时，在基板上形成有由析出膜中的结晶物质引起的拉曼散射强度的微晶硅区域的面积等于或高于 归因于非晶体的拉曼散射基于微晶硅区域的面积和由无定形构成的区域的面积为总面积的50％以上。