公开(公告)号：US06783640B2

公开(公告)日：2004-08-31

申请号：US10050787

申请日：2002-01-18

申请人： Toshihiro Yamashita ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

发明人： Toshihiro Yamashita ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

IPC分类号： C23C1434

CPC分类号： C23C14/0042 ,  C23C14/544

摘要： In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.

摘要翻译： 在监测等离子体的发光强度的同时，在成膜空间的基板上形成膜的溅射方法中，该方法包括以下步骤：检测在基板上形成的膜的厚度; 将检测值与膜厚的预设值进行比较; 并根据比较结果决定发光强度的目标值。 通过该方法，形成了透明导电膜，其膜厚度，薄层电阻和透射率均匀性高，因此具有优异的特性。

公开(公告)号：US07501305B2

公开(公告)日：2009-03-10

申请号：US11874352

申请日：2007-10-18

申请人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

发明人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

IPC分类号： H01L21/20

CPC分类号： H01L21/67253 ,  C23C16/24 ,  C23C16/545 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.

摘要翻译： 通过等离子体增强CVD在移动基板上形成含有微晶硅的沉积膜的方法包括通过等离子体增强CVD在移动的衬底上形成含有微晶硅的沉积膜，使得当厚度为300nm的沉积膜 以上，在基板处于静止状态的同时，在基板上形成有由析出膜中的结晶物质引起的拉曼散射强度的微晶硅区域的面积等于或高于 归因于非晶体的拉曼散射基于微晶硅区域的面积和由无定形构成的区域的面积为总面积的50％以上。

公开(公告)号：US07211708B2

公开(公告)日：2007-05-01

申请号：US09822191

申请日：2001-04-02

申请人： Takeshi Shishido ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Yasuyoshi Takai ,  Tadashi Hori ,  Koichiro Moriyama ,  Hidetoshi Tsuzuki ,  Hiroyuki Ozaki

发明人： Takeshi Shishido ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Yasuyoshi Takai ,  Tadashi Hori ,  Koichiro Moriyama ,  Hidetoshi Tsuzuki ,  Hiroyuki Ozaki

IPC分类号： A62D3/00 ,  B08B15/00 ,  B08B5/00 ,  H05H1/03 ,  H05H1/16 ,  H05H1/48

CPC分类号： H01J37/32844 ,  C23C14/564 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

摘要： A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

摘要翻译： 化学反应诱发装置设置在连接用于对衬底或膜进行等离子体处理的处理空间到排气装置的排气管线中，并且至少从处理空间排出的未反应气体或副产物发生化学反应 不允许处理空间中的等离子体到达化学反应诱导装置，从而提高化学反应诱导装置处理未反应气体或副产物的处理能力。

公开(公告)号：US06811816B2

公开(公告)日：2004-11-02

申请号：US10195543

申请日：2002-07-16

申请人： Hideo Tamura ,  Masahiro Kanai ,  Yasuyoshi Takai ,  Hiroshi Shimoda ,  Hidetoshi Tsuzuki

发明人： Hideo Tamura ,  Masahiro Kanai ,  Yasuyoshi Takai ,  Hiroshi Shimoda ,  Hidetoshi Tsuzuki

IPC分类号： C23C1600

CPC分类号： C23C14/564 ,  C23C14/562 ,  H01L31/20 ,  Y02E10/50

摘要： A gas adsorptive member is disposed in a space communicating with film deposition chambers, and deposition films are deposited while continuously feeding gas components released from this member, thereby enabling the high quality and uniform deposition films to be formed on the substrate with good reproducibility.

摘要翻译： 气体吸附构件设置在与成膜室连通的空间中，并且沉积膜沉积，同时连续地供给从该构件释放的气体成分，从而能够以良好的再现性在基板上形成高品质和均匀的沉积膜。

公开(公告)号：US06930025B2

公开(公告)日：2005-08-16

申请号：US10059168

申请日：2002-01-31

申请人： Akiya Nakayama ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Naoto Okada ,  Shigeo Kiso

发明人： Akiya Nakayama ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Naoto Okada ,  Shigeo Kiso

IPC分类号： C23C14/02 ,  H01L31/0224 ,  H01L31/052 ,  H01L31/18 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L31/1884 ,  C23C14/024 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/056 ,  Y02E10/52

摘要： In a process for forming on a substrate a transparent conductive film having crystallizability, the process comprises a first step of forming a film at a first film formation rate and a second step of forming a film at a second film formation rate, and the relationship between film formation rates in the respective steps satisfies: 2≦(second film formation rate)/(first film formation rate)≦100; which provides a process for producing a transparent conductive film by a deposition process advantageous for cost reduction, which can form in a short time a transparent conductive film having an uneven surface profile with a high light-confining effect, and can bring about an improvement in photovoltaic performance and enjoy a high mass productivity when applied to the formation of multi-layer structure of photovoltaic devices.

摘要翻译： 在基板上形成具有结晶性的透明导电膜的方法中，该方法包括以第一成膜速度形成薄膜的第一步骤和以第二薄膜形成速率形成薄膜的第二步骤 各步骤中的成膜速度满足：<？in-line-formula description =“In-line formula”end =“lead”？> 2 <=（第二成膜速率）/（第一成膜速率）<= 100 ; <？in-line-formula description =“In-line Formulas”end =“tail”？>，其提供了一种通过有利于成本降低的沉积工艺制造透明导电膜的方法，其可以在短时间内形成 透明导电膜具有不均匀的表面轮廓，具有高的光限制效应，并且当应用于形成光伏器件的多层结构时，可以实现光伏性能的提高并且获得高的批量生产率。

公开(公告)号：US06860974B2

公开(公告)日：2005-03-01

申请号：US10183339

申请日：2002-06-28

申请人： Hiroshi Echizen ,  Yasuyoshi Takai ,  Akiya Nakayama

发明人： Hiroshi Echizen ,  Yasuyoshi Takai ,  Akiya Nakayama

IPC分类号： C23C14/34 ,  C23C14/00 ,  C23C14/56 ,  H01L31/0224 ,  H01L31/04 ,  C23C14/32

CPC分类号： H01L31/022466 ,  C23C14/0042 ,  C23C14/0073 ,  C23C14/568 ,  H01L31/022483

摘要： There are provided techniques of forming a back reflecting layer with constant characteristics throughout long-term film formation and forming a metal oxide film so as to be able to maintain a current of a bottom cell and thereby keep a short-circuit current Jsc of a solar cell constant over a long period of time. A sputtering method is a method of forming a stack of a metal film and a metal oxide film, comprising the step 1 of forming a metal layer on a substrate, the step 2 of bringing a surface of the metal layer into contact with active oxygen, and the step 3 of forming a metal oxide film thereon after the step 2, wherein in the step 2 an amount of active oxygen at a first substrate position is different from that at a second substrate position.

摘要翻译： 提供了在长期成膜和形成金属氧化物膜时形成具有恒定特性的背反射层以便能够保持底电池的电流并由此保持太阳能的短路电流Jsc的技术 细胞常数长时间。 溅射法是形成金属膜和金属氧化物膜的堆叠的方法，其包括在基板上形成金属层的工序1，使金属层的表面与活性氧接触的工序2， 以及步骤2之后在其上形成金属氧化物膜的步骤3，其中在步骤2中，第一基板位置处的活性氧量与第二基板位置处的活性氧量不同。

公开(公告)号：US20090095420A1

公开(公告)日：2009-04-16

申请号：US12327428

申请日：2008-12-03

申请人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

发明人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

IPC分类号： H01L21/3065 ,  B05C9/08 ,  H01L21/302

CPC分类号： H01L21/67017 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/545 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

公开(公告)号：US20090084500A1

公开(公告)日：2009-04-02

申请号：US12326238

申请日：2008-12-02

申请人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

发明人： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C14/34

CPC分类号： H01L21/67017 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/545 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

摘要翻译： 公开了一种处理衬底或膜的处理装置的废气处理过程，其包括在处理基板或膜之后，将未反应的气体和/或副产物引入陷阱装置， 由包含钨，钼和铼中的至少一种作为主要成分的高熔点金属材料构成的长丝; 以及处理陷阱装置内的未反应气体和/或副产物。 这使得可以防止排气电导降低，延长加工设备的维护周期，并且提供高质量的产品（经处理的基板或膜）。

公开(公告)号：US20080096305A1

公开(公告)日：2008-04-24

申请号：US11874352

申请日：2007-10-18

申请人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

发明人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

IPC分类号： H01L21/00

CPC分类号： H01L21/67253 ,  C23C16/24 ,  C23C16/545 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.

摘要翻译： 通过等离子体增强CVD在移动基板上形成含有微晶硅的沉积膜的方法包括通过等离子体增强CVD在移动的衬底上形成含有微晶硅的沉积膜，使得当厚度为300nm的沉积膜 以上，在基板处于静止状态的同时，在基板上形成有由析出膜中的结晶物质引起的拉曼散射强度的微晶硅区域的面积等于或高于 归因于非晶体的拉曼散射基于微晶硅区域的面积和由无定形构成的区域的面积为总面积的50％以上。

公开(公告)号：US20070169890A1

公开(公告)日：2007-07-26

申请号：US11694889

申请日：2007-03-30

申请人： TAKESHI SHISHIDO ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Yasuyoshi Takai ,  Tadashi Hori ,  Koichiro Moriyama ,  Hidetoshi Tsuzuki ,  Hiroyuki Ozaki

发明人： TAKESHI SHISHIDO ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Yasuyoshi Takai ,  Tadashi Hori ,  Koichiro Moriyama ,  Hidetoshi Tsuzuki ,  Hiroyuki Ozaki

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32844 ,  C23C14/564 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

摘要： A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

摘要翻译： 化学反应诱发装置设置在连接用于对衬底或膜进行等离子体处理的处理空间到排气装置的排气管线中，并且至少从处理空间排出的未反应气体或副产物发生化学反应 不允许处理空间中的等离子体到达化学反应诱导装置，从而提高化学反应诱导装置处理未反应气体或副产物的处理能力。